Formation of twin superlattice in bulk silicon crystal by crystal growth with controlled grain boundary configuration
| Project/Area Number |
20860003
|
|---|
| Research Category |
Grant-in-Aid for Young Scientists (Start-up)
|
| Allocation Type | Single-year Grants |
|---|
| Research Field |
Applied materials science/Crystal engineering
|
|---|
| Research Institution | Tohoku University |
|---|
Principal Investigator |
KUTSUKAKE Kentaro Tohoku University, 金属材料研究所, 助教 (00463795)
|
|---|
| Project Period (FY) |
2008 – 2009
|
| Project Status |
Completed (Fiscal Year 2009)
|
| Budget Amount *help |
¥3,289,000 (Direct Cost: ¥2,530,000、Indirect Cost: ¥759,000)
Fiscal Year 2009: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2008: ¥1,729,000 (Direct Cost: ¥1,330,000、Indirect Cost: ¥399,000)
|
|---|
| Keywords | シリコン / 双晶 / 超格子 / 結晶成長 / 結晶粒界 / 結晶欠陥 |
|---|
| Research Abstract |
We proposed crystal growth using seed crystals with controlled configuration as a new method to form twin supperlattice in a bulk Si crystal. We found that tilt deviation from the twin configuration and change in the growth rate are important factor in the twin formation. Reduction in dislocation density around the twins is an issue in the future.
|
Report
(3 results)
Research Products
(20 results)
