Analysis of interface between electrode and zinc oxide semiconductor for ultraviolet photo device

• Project/Area Number: 20860014
• Research Category: Grant-in-Aid for Young Scientists (Start-up)
• Allocation Type: Single-year Grants
• Research Field: Structural/Functional materials
• Research Institution: Tohoku University
• Principal Investigator: SAITO Mitsuhiro Tohoku University, 原子分子材料科学高等研究機構, 助教 (00510546)
• Project Period (FY): 2008 – 2009
• Project Status: Completed (Fiscal Year 2009)
• Budget Amount: ¥3,289,000 (Direct Cost: ¥2,530,000、Indirect Cost: ¥759,000); Fiscal Year 2009: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000); Fiscal Year 2008: ¥1,729,000 (Direct Cost: ¥1,330,000、Indirect Cost: ¥399,000)
• Keywords: 界面 / 酸化亜鉛 / 電極 / 電子顕微鏡

Research Abstract

Schottky contact is essential for rectifiability between electrode and zinc oxide (ZnO) which can be applied as ultraviolet photo device. However, it was difficult to control formation of the electrode with stable Schottky contact. Elucidation of correlation between contacts and material properties has been required. Pd/ZnO interface was analyzed as model system by using a high-voltage high-resolution transmission electron microscope. The local atomic structure could by quantitatively determined and the interfacial electric state was simulated by first principle calculation. The correlation between the local atomic structure and electric properties could be elucidated.

Research Products

• [Journal Article] (2009)
  • Author(s): Mitsuhiro Saito, Thomas Wagner, Gunther Richter, Manfred Ruhle
  • Journal Title: Physical Review B 80 Pages: 134110-134110
  • Peer Reviewed
• [Journal Article] (2009)
  • Author(s): Zhongchang Wang, Susumu Tsukimoto, Mitsuhiro Saito, Yuichi Ikuhara
  • Journal Title: Journal of Applied Physics 106 Pages: 93714-93714
  • Peer Reviewed
• [Journal Article] High-resolution TEM investigation of structure and composition of polar Pd/ZnO interfaces (2009)
  • Author(s): Mitsuhiro Saito
  • Journal Title: Physical Review B 80
  • Peer Reviewed
• [Journal Article] Atomic and Electronic Structure of the YBa_2Cu_3O_7/SrTiO_3 Interface from First Principles (2009)
  • Author(s): Zhongchang Wang
  • Journal Title: Journal of Applied Physics 106
  • Peer Reviewed
• [Journal Article] SiC/Ti_3SiC_2 interface : Atomic structure, energetic, and bonding (2009)
  • Author(s): Zhongchang Wang
  • Journal Title: PHYSICAL REVIEW B 79
  • Peer Reviewed
• [Presentation] (2009)
  • Author(s): 斎藤光浩, 王中長, 着本享, 幾原雄一
  • Organizer: 日本金属学会
  • Place of Presentation: 熊本大学
  • Year and Date: 2009-09-25
• [Presentation] (2009)
  • Author(s): 斎藤光浩, 王中長, 着本享, 幾原雄一
  • Organizer: 日本顕微鏡学会
  • Place of Presentation: 宮城
  • Year and Date: 2009-05-29
• [Presentation] STEMによるLaドープSrTiO_3薄膜の構造解析 (2009)
  • Author(s): 斎藤光浩
  • Organizer: 日本顕微鏡学会第65回学術講演会
  • Place of Presentation: 仙台
  • Year and Date: 2009-05-29
• [Presentation] (2009)
  • Author(s): 着本享, 斎藤光浩, 王中長, 幾原雄一
  • Organizer: 日本顕微鏡学会
  • Place of Presentation: 宮城
  • Year and Date: 2009-05-26
• [Presentation] SiC半導体用低抵抗電極秘における界面構造 (2009)
  • Author(s): 着本享
  • Organizer: 日本顕微鏡学会第65回学術講演会
  • Place of Presentation: 仙台
  • Year and Date: 2009-05-26
• [Presentation] (2009)
  • Author(s): 斎藤光浩, 王中長, 着本享, 幾原雄一
  • Organizer: 日本金属学会
  • Place of Presentation: 東京工業大学
  • Year and Date: 2009-03-29
• [Presentation] p型SiC半導体/Ti-A1系オーミック電極界面の原子構造解析 (2009)
  • Author(s): 斎藤光浩
  • Organizer: 第144回春季日本金属学会
  • Place of Presentation: 東京
  • Year and Date: 2009-03-29
• [Presentation] (2009)
  • Author(s): 王中長, 着本享, 斎藤光浩, 幾原雄一
  • Organizer: 日本金属学会
  • Place of Presentation: 東京工業大学
  • Year and Date: 2009-03-28
• [Presentation] Atomic Structure and Quantum Electron Transport of SiC/Ti_3SiC_2 Interface (2009)
  • Author(s): 王中長
  • Organizer: 第144回春季日本金属学会
  • Place of Presentation: 東京
  • Year and Date: 2009-03-28
• [Presentation] p型SiC半導体/Ti_3SiC_2電極界面の原子構造解析 (2008)
  • Author(s): 斎藤光浩
  • Organizer: 第143回秋季日本金属学会
  • Place of Presentation: 熊本
  • Year and Date: 2008-09-25