Low-temperature preparation of silicon single-crystal by using activated metal
| Project/Area Number |
20860016
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| Research Category |
Grant-in-Aid for Young Scientists (Start-up)
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| Allocation Type | Single-year Grants |
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| Research Field |
Metal making engineering
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| Research Institution | Tohoku University |
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Principal Investigator |
MORITO Haruhiko Tohoku University, 多元物質科学研究所, 助教 (80463800)
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| Project Period (FY) |
2008 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥3,263,000 (Direct Cost: ¥2,510,000、Indirect Cost: ¥753,000)
Fiscal Year 2009: ¥1,547,000 (Direct Cost: ¥1,190,000、Indirect Cost: ¥357,000)
Fiscal Year 2008: ¥1,716,000 (Direct Cost: ¥1,320,000、Indirect Cost: ¥396,000)
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| Keywords | 環境材料 / 結晶成長 / 太陽電池 / シリコン / ナトリウム / 状態図 |
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| Research Abstract |
I have prepared silicon (Si) crystals having the good properties as solar battery materials by using sodium (Na) melt. I presented a phase diagram for Na and Si and made clear that Si crystal dissolves in Na solution at 800-900℃. Based on the phase diagram, I performed formation of single crystals, films, porous bulks and microtubes of Si by vaporizing Na from a Na-Si melt.
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Report
(3 results)
Research Products
(68 results)
