Role of Electrical Forming Process in Resistive Switching Effect of Nickel Oxide Thin Films
| Project/Area Number |
20860047
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| Research Category |
Grant-in-Aid for Young Scientists (Start-up)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kyoto University |
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Principal Investigator |
NISHI Yusuke Kyoto University, 大学院・工学研究科, 助教 (10512759)
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| Project Period (FY) |
2008 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥3,289,000 (Direct Cost: ¥2,530,000、Indirect Cost: ¥759,000)
Fiscal Year 2009: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2008: ¥1,729,000 (Direct Cost: ¥1,330,000、Indirect Cost: ¥399,000)
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| Keywords | 不揮発性メモリ / 構造・機能材料 / 表面・界面物性 / 抵抗変化 / 酸化物 / 欠陥準位 / スパッタリング / 結晶性 |
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| Research Abstract |
Resistive Random Access Memory (ReRAM) consisting of nickel oxide (NiO) is one of the promising simple devices for a new generation nonvolatile memory. However, fundamental properties of the oxides and resistive switching mechanisms have not been fully understood yet. In the study, we focused on the electrical forming process and the oxygen composition of the NiO thin films and investigated the resistive switching property and defects in the films. By admittance spectroscopy and the activation energy of the resistances in both initial state and high-resistance state, band conduction with holes thermally excited from the defect level located at 170meV above the valence band edge may be dominant in the Pt/NiO_<1.07>/Pt stacking structure.
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Report
(3 results)
Research Products
(9 results)
