| Project/Area Number |
20860057
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| Research Category |
Grant-in-Aid for Young Scientists (Start-up)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Yamaguchi University |
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Principal Investigator |
OKADA Narihito Yamaguchi University, 大学院・理工学研究科, 助教 (70510684)
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| Project Period (FY) |
2008 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥3,289,000 (Direct Cost: ¥2,530,000、Indirect Cost: ¥759,000)
Fiscal Year 2009: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2008: ¥1,729,000 (Direct Cost: ¥1,330,000、Indirect Cost: ¥399,000)
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| Keywords | サファイア加工基板 / GaN / GaInN / 非極性面 / 非極性面GaN |
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| Research Abstract |
We established novel growth technique to fabricate high-quality nonpolar or semipolar GaN. The technique led GaN with "low-cost, large, and high-quality" which are essential for the commercialization. Specifically, GaN is grown from sapphire sidewall in stripe-patterned sapphire substrate. Finally, GaInN was grown on high-quality nonpolar or semipolar GaN and evaluated. As a result, we found the condition to obtain high-quality GaInN.
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