Development of advanced luminescent functionality by control of atomic configuration in rare-earth doped semiconductors

• Project/Area Number: 20900123
• Allocation Type: Single-year Grants
• Research Institution: Osaka University
• Principal Investigator: FUJIWARA Yasufumi 大阪大学, 大学院工学研究科, 教授 (10181421)
• Co-Investigator(Kenkyū-buntansha): TERAI Yoshikazu 大阪大学, 大学院工学研究科, 助教 (90360049) ; TONOUCHI Masayoshi 大阪大学, レーザーエネルギー学研究センター, 教授 (40207593) ; ICHIDA Hideki 大阪大学, 先端科学イノベーションセンター, 助教 (50379129)
• Project Period (FY): 2008
• Project Status: Completed (Fiscal Year 2008)
• Keywords: 秩序制御 / 高次発光機能 / 発光ダイナミクス / 局所構造 / 希土類元素

Outline of Final Research Achievements

有機金属気相エピタキシャル(OMVPE)法によりEr,O共添加GaAs(GaAs : Er,O)を作製した。Er-2O発光強度の測定温度依存性において、低温域で発現する新奇な発光挙動を観測し、Cの関与したオージェ過程によることを明らかにした。また、エレクトロルミネッセンス(EL)測定において希土類添加半導体を母体として初めて電流注入下でGaAsバンド端レーザ発振を観測し、Er発光との関わりを明らかにした。さらに、980nm近傍に量子準位を有するInGaAs量子井戸をGaAs : Er,O光ガイド層へ埋め込んだ量子井戸レーザを作製し、Er発光強度の増大を観測した。GaAs : Er,Oのテラヘルツ(THz)波デバイスとしての新たな応用可能性についても検討した。

Research Products

• [Journal Article] Optical properties of GaInP/GaAs : Er, O/GaInP laser diodes on p-type GaAs substrates grown by organometallic vapor phase epitaxy (2009)
  • Author(s): Y. OTA
  • Journal Title: IOP Conference Series : Materials Science and Engineering 1
  • Peer Reviewed
• [Journal Article] Electroluminescence properties of GalnP/GaAs : Er, O/GaInP double heterostructure light-emitting diodes at low temperature (2009)
  • Author(s): Y. TERAI
  • Journal Title: Optical Materials (印刷中)
  • Peer Reviewed
• [Journal Article] Luminescence properties in Er, O-codoped GaAs light-emitting devices with double excitation mechanism (2009)
  • Author(s): Y. FUJIWARA
  • Journal Title: Materials Research Society Symposium Proceedings (印刷中)
  • Peer Reviewed
• [Journal Article] Development of new-type 1.5μm light-emitting devices based on Er, O-codoped GaAs (2009)
  • Author(s): Y. FUJI WARA
  • Journal Title: Journal of Physics : Conference Series (印刷中)
  • Peer Reviewed
• [Journal Article] Metalorganic chemical vapor deposition of Er-doped ZnO thin films with 1.54 μm photoluminescence (2009)
  • Author(s): K. YAMAOKA
  • Journal Title: Journal of Physics : Conference Series (印刷中)
  • Peer Reviewed
• [Journal Article] Terahertz radiation from Er, O-codoped GaAs surface grown by organometallic vapour phase epitaxy (2008)
  • Author(s): K. SHIMADA
  • Journal Title: Applied Physics Letters 92
  • Peer Reviewed
• [Journal Article] Ultrafast carrier-capturing in GaInP/Er, O-codoped GaAs/GaInP laser diodes grown by organometallic vapor phase epitaxy (2008)
  • Author(s): Y. TERAI
  • Journal Title: Applied Physics Letters 93
  • Peer Reviewed
• [Journal Article] GaAs emission from GaInP/Er, O-codoped GaAs/GaInP laser diodes grown by organometallic vapor Phase epitaxy (2008)
  • Author(s): K. FUJII
  • Journal Title: Physica Status Solidi c 5 Pages: 2716-2718
  • Peer Reviewed
• [Journal Article] Ultrafast photoexcited carrier dynamics in GaAs : Er, O by pump and probe transmission spectroscopy (2008)
  • Author(s): K. SHIMADA
  • Journal Title: Physica Status Solidi c 5 Pages: 2861-2863
  • Peer Reviewed
• [Journal Article] Nonradiative processes at low temperature in Er, O-codoped GaAs grown by organometallic vapor phase epitaxy (2008)
  • Author(s): A. FUJITA
  • Journal Title: Physica Status Solidi c 5 Pages: 2864-2866
  • Peer Reviewed
• [Journal Article] Organometallic vapor phase epitaxy of Er, O-codoped GaAs using trisdipivaloylmethanatoerbium (2008)
  • Author(s): Y TERAI
  • Journal Title: Journal of Physics : Conference Series 106
  • Peer Reviewed
• [Journal Article] 希土類添加GaAs結晶の原子レベル制御成長と新規発光デバイスへの応用 (2008)
  • Author(s): 藤原康文
  • Journal Title: オプトロニクス 27 Pages: 157-163
  • Peer Reviewed
• [Presentation] 希土類添加半導体の新展開 : 秩序制御と高次量子機能の発現 (2009)
  • Author(s): 藤原康文
  • Organizer: 科学技術による地域活性化戦略」ワークショップ
  • Place of Presentation: 兵庫県民会館(神戸市)(招待講演)
  • Year and Date: 2009-02-21
• [Presentation] Electron spin resonance study on Er, O-codoped GaAs (2008)
  • Author(s): H. OHTA
  • Organizer: 2008 Materials Research Society Fall Meeting
  • Place of Presentation: ボストン(米国)(招待講演)
  • Year and Date: 2008-12-01
• [Presentation] Injection-type 1.5μm light-emitting diodes with Er, O-codoped GaAs exhibiting extremely temperature-stable emission wavelength (2008)
  • Author(s): Y. FUJIWARA
  • Organizer: 3rd Int. Conf. on Optical, Optoelectronic and Photonic Materials and Applications
  • Place of Presentation: エドモントシ(加国)(招待講演)
  • Year and Date: 2008-07-23
• [Presentation] Quantum properties revealed by precise control of atomic configuration in rare-earth doped semiconductors (2008)
  • Author(s): Y. FUJIWARA
  • Organizer: MRS International Materials Research Conference
  • Place of Presentation: 重慶(中国)(招待講演)
  • Year and Date: 2008-06-11
• [Remarks]
  • URL: http://www.mateng.osaka-u.ac.jp/mse6/MSE6-HomeJ.htm