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Heterosynaptic platform functionalized by topological control of oxygen vacancy distribution in memristive devices

Research Project

Project/Area Number 20H00248
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Review Section Medium-sized Section 21:Electrical and electronic engineering and related fields
Research InstitutionOsaka University

Principal Investigator

Sakai Akira  大阪大学, 大学院基礎工学研究科, 教授 (20314031)

Project Period (FY) 2020-04-01 – 2024-03-31
Project Status Completed (Fiscal Year 2023)
Budget Amount *help
¥45,760,000 (Direct Cost: ¥35,200,000、Indirect Cost: ¥10,560,000)
Fiscal Year 2023: ¥7,020,000 (Direct Cost: ¥5,400,000、Indirect Cost: ¥1,620,000)
Fiscal Year 2022: ¥5,850,000 (Direct Cost: ¥4,500,000、Indirect Cost: ¥1,350,000)
Fiscal Year 2021: ¥10,660,000 (Direct Cost: ¥8,200,000、Indirect Cost: ¥2,460,000)
Fiscal Year 2020: ¥22,230,000 (Direct Cost: ¥17,100,000、Indirect Cost: ¥5,130,000)
Keywordsメモリスタ / ヘテロシナプス / 4端子 / ニューラルネットワーク / 酸素空孔 / 高温動作 / クロスバー構造 / パブロフ型条件付け連合学習 / 4端子クロスバー構造 / ゲートチューニング / コンダクタンス / パブロフ型条件付け / 多ビット信号 / 多端子クロスバーアレイ / ニューロモルフィック / 4端子平面型素子 / コンダクタンス変調 / 興奮性主ニューロン / 抑制性介在ニューロン / パルスレーザー蒸着法 / 有限要素法シミュレーション / ドーパント / ドリフト・拡散
Outline of Research at the Start

本研究においては、高次の脳機能を発現するニューロモルフィックチップの実現に向けて、メモリスタ物質内の酸素空孔分布トポロジーを自在に制御できる多端子クロスバーアレイ構造を開発し、他のシナプスと多次元で結び付いたヘテロシナプス素子を基幹とするデバイス・回路基盤「ヘテロシナプスプラットフォーム」を創製する。酸素空孔挙動の実験・理論解析およびシミュレーションに基づいてトポロジーの制御指針を獲得し、多入力・多出力の高次ヘテロシナプス特性を発現させる。また、集積化構造としての特徴を活かし、条件刺激と無条件刺激に対応する連合学習機能を実証する。

Outline of Final Research Achievements

To realize AI hardware that exhibits higher-order brain functions, we aimed to create a device and circuit foundation consisting of heterosynapses interconnected in multiple dimensions, with the functional principle of controlling the topology of oxygen vacancy distributions in memristive materials. Focusing on reduced amorphous gallium oxide and titanium oxide thin films, we conducted experimental and theoretical analyses of oxygen vacancy behavior and elucidated the mechanisms of electrical conduction and resistance change. By developing memristors that can apply electric fields in various dimensions and geometries, such as two-terminal capacitor-type, planar-type, crossbar-type, and four-terminal planar-type and crossbar-type, we succeeded in constructing a platform that mimics higher-order brain functions, such as synaptic weight gate modulation and associative learning, as artificial synaptic elements.

Academic Significance and Societal Importance of the Research Achievements

本研究はメモリスタ内の酸素空孔分布トポロジーの変調によって、多様な抵抗状態・抵抗遷移を発現させることに独自性があり、酸素空孔の電界下挙動に関して獲得された学術的知見は、材料種によらないコモンメカニズムの理解に通じ、不純物イオンを切り口にした創造的な素子設計指針へと展開できる。また、還元性酸化ガリウムメモリスタで600Kまでの高温動作が実証された成果は新たな次元の産業応用へ繋げられる。さらに、新たに開発された4端子クロスバー型メモリスタは、高度の集積化が可能な構造を有していることから、連合学習等の高次脳機能を模倣できる次世代AIハードウェアへ展開でき、その社会的意義は大きい。

Report

(6 results)
  • 2023 Annual Research Report   Final Research Report ( PDF )
  • 2022 Annual Research Report
  • 2021 Annual Research Report
  • 2020 Comments on the Screening Results   Annual Research Report
  • Research Products

    (33 results)

All 2024 2023 2022 2021 2020 Other

All Journal Article (5 results) (of which Peer Reviewed: 5 results,  Open Access: 3 results) Presentation (25 results) (of which Int'l Joint Research: 9 results,  Invited: 2 results) Remarks (2 results) Patent(Industrial Property Rights) (1 results)

  • [Journal Article] Gate-tunable plasticity in artificial synaptic devices based on four-terminal amorphous gallium oxide memristors2023

    • Author(s)
      Ikeuchi Taishi、Hayashi Yusuke、Tohei Tetsuya、Sakai Akira
    • Journal Title

      Applied Physics Express

      Volume: 16 Issue: 1 Pages: 015509-015509

    • DOI

      10.35848/1882-0786/acb0ae

    • Related Report
      2022 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Interface engineering of amorphous gallium oxide crossbar array memristors for neuromorphic computing2023

    • Author(s)
      Masaoka Naoki、Hayashi Yusuke、Tohei Tetsuya、Sakai Akira
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 62 Issue: SC Pages: SC1035-SC1035

    • DOI

      10.35848/1347-4065/acb060

    • Related Report
      2022 Annual Research Report
    • Peer Reviewed
  • [Journal Article] High-temperature operation of gallium oxide memristors up to 600?K2023

    • Author(s)
      Sato Kento、Hayashi Yusuke、Masaoka Naoki、Tohei Tetsuya、Sakai Akira
    • Journal Title

      Scientific Reports

      Volume: 13 Issue: 1

    • DOI

      10.1038/s41598-023-28075-4

    • Related Report
      2022 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Versatile Functionality of Four-Terminal TiO2-x Memristive Devices as Artificial Synapses for Neuromorphic Computing2022

    • Author(s)
      Ryotaro Miyake, Zenya Nagata, Kenta Adachi, Yusuke Hayashi, Tetsuya Tohei, Akira Sakai
    • Journal Title

      ACS Applied Electronic Materials

      Volume: - Issue: 5 Pages: 2326-2336

    • DOI

      10.1021/acsaelm.2c00161

    • Related Report
      2022 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Fabrication of GaOx based crossbar array memristive devices and their resistive switching properties2020

    • Author(s)
      M. Joko, Y. Hayashi, T. Tohei, A. Sakai
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 59 Issue: SM Pages: SMMC03-SMMC03

    • DOI

      10.35848/1347-4065/ab8be6

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Presentation] 4端子平面型TiO2-xメモリスタの微細化とパブロフ型条件付け次元拡張2024

    • Author(s)
      山本遼平、林侑介、藤平哲也、酒井朗
    • Organizer
      第71回応用物理学会春季学術講演会
    • Related Report
      2023 Annual Research Report
  • [Presentation] アモルファスGaOxを用いた4端子クロスバーアレイメモリスタの開発と抵抗変化特性2024

    • Author(s)
      山下真矢、林侑介、藤平哲也、酒井朗
    • Organizer
      第71回応用物理学会春季学術講演会
    • Related Report
      2023 Annual Research Report
  • [Presentation] Implementation of Operant Conditioning in Four-Terminal Planar TiO2-x Memristive Devices2024

    • Author(s)
      Zijie Meng, Yusuke Hayashi, Tetsuya Tohei, Akira Sakai
    • Organizer
      第71回応用物理学会春季学術講演会
    • Related Report
      2023 Annual Research Report
  • [Presentation] その場TEMによる単結晶TiO2-xメモリスタ素子における剪断面形成機構の解析2023

    • Author(s)
      高田玲、藤平哲也、林侑介、酒井朗
    • Organizer
      日本顕微鏡学会第79回学術講演会
    • Related Report
      2023 Annual Research Report
  • [Presentation] Analysis of Shear Plane Formation Mechanism in Single Crystal TiO2-x Memristor by Using In-Situ TEM Observation2023

    • Author(s)
      Rei Takada, Tetsuya Tohei, Yusuke Hayashi, Akira Sakai
    • Organizer
      International Workshop on Advanced and In-Situ Microscopies of Functional Nanomaterials and Devices (IAMNano) 2023
    • Related Report
      2023 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Finite Element Analysis of Oxygen Vacancy Behavior in Four-Terminal TiO2-x Memristive Devices2023

    • Author(s)
      Yuki Koizumi, Ryotaro Miyake, Yusuke Hayashi, Tetsuya Tohei, Akira Sakai
    • Organizer
      2023 International Conference on Solid State Devices and Materials
    • Related Report
      2023 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 4端子平面型TiO2-xメモリスタにおける酸素空孔挙動の有限要素法解析2023

    • Author(s)
      小泉優紀、三宅亮太郎、林侑介、藤平哲也、酒井朗
    • Organizer
      第84回応用物理学会秋季学術講演会
    • Related Report
      2023 Annual Research Report
  • [Presentation] Implementation of Pavlovian Conditioning with TiO2-x Miniaturized Four-Terminal Planar Memristors2023

    • Author(s)
      Ryohei Yamamoto, Yusuke Hayashi, Tetsuya Tohei, Akira Sakai
    • Organizer
      2023 International Workshop on Dielectric Thin Films For Future Electron Devices -Science and Technology-
    • Related Report
      2023 Annual Research Report
    • Int'l Joint Research
  • [Presentation] ルチル型TiO2中の剪断面構造及び酸素空孔挙動に関する第一原理計算2023

    • Author(s)
      二宮雅輝、藤平哲也、林侑介、酒井朗
    • Organizer
      第70回応用物理学会春季学術講演会
    • Related Report
      2022 Annual Research Report
    • Invited
  • [Presentation] First-Principles Analysis of Oxygen Vacancy Behavior in Rutile TiO2 under External Electric Fields2022

    • Author(s)
      Masaki Ninomiya, Yusuke Hayashi, Akira Sakai, Tetsuya Tohei
    • Organizer
      9th International Symposium on Control of Semiconductor Interfaces
    • Related Report
      2022 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Amorphous GaOx Crossbar Array Memristors for Artificial Synaptic Devices2022

    • Author(s)
      Naoki Masaoka, Yusuke Hayashi, Tetsuya Tohei, Akira Sakai
    • Organizer
      2022 International Conference on Solid-State Devices and Materials
    • Related Report
      2022 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 第一原理計算によるルチル型TiO2中の剪断面構造及び酸素空孔挙動の解析2022

    • Author(s)
      二宮雅輝、藤平哲也、林侑介、酒井朗
    • Organizer
      第83回応用物理学会秋季学術講演会
    • Related Report
      2022 Annual Research Report
  • [Presentation] 酸素空孔分布制御型メモリスタを用いた多機能人工シナプス2022

    • Author(s)
      酒井朗,藤平哲也,林侑介
    • Organizer
      第69回応用物理学会春季学術講演会
    • Related Report
      2021 Annual Research Report
    • Invited
  • [Presentation] GaOxメモリスタの抵抗スイッチング特性評価2022

    • Author(s)
      佐藤健人,林侑介, 藤平哲也,酒井朗
    • Organizer
      第69回応用物理学会春季学術講演会
    • Related Report
      2021 Annual Research Report
  • [Presentation] 平面型TiO2-xメモリスタ素子における抵抗変化領域のその場TEM観察2022

    • Author(s)
      谷口奈穂,林侑介, 藤平哲也,酒井朗
    • Organizer
      第69回応用物理学会春季学術講演会
    • Related Report
      2021 Annual Research Report
  • [Presentation] アモルファスGaOxを用いたクロスバーアレイメモリスタの抵抗変化特性2022

    • Author(s)
      正岡直樹, 林侑介, 藤平哲也, 酒井朗
    • Organizer
      第69回応用物理学会春季学術講演会
    • Related Report
      2021 Annual Research Report
  • [Presentation] Heterosynaptic Property Demonstrated with Planer Four-Terminal Amorphous GaOx Memristive Devices2021

    • Author(s)
      Taishi Ikeuchi, Yusuke Hayashi, Tetsuya Tohei, Akira Sakai
    • Organizer
      2021 International Conference on Solid-State Devices and Materials
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 第一原理計算手法に基づく外部電場下におけるルチル型TiO2中の酸素空孔挙動の解析2021

    • Author(s)
      二宮雅輝,藤平哲也,林侑介,酒井朗
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Related Report
      2021 Annual Research Report
  • [Presentation] Habituation and sensitization properties mimicked in four-terminal TiO2-x memristive devices2021

    • Author(s)
      K. Adachi, Y. Hayashi, T. Tohei, A. Sakai
    • Organizer
      4th International Conference on Memristive Materials, Devices & Systems
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Pavlovian conditioning implemented in four-terminal TiO2-x memristive devices2021

    • Author(s)
      R. Miyake, K. Adachi, Y. Hayashi, T. Tetsuya, A. Sakai
    • Organizer
      4th International Conference on Memristive Materials, Devices & Systems
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Temperature-Dependent Resistive Switching Properties of GaOx Memristors up to 600 K2021

    • Author(s)
      Kento Sato, Yusuke Hayashi, Tetsuya Tohei, Akira Sakai
    • Organizer
      2021 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES ─ Science and Technology ─
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 4端子平面型アモルファスGaOxメモリスタ素子の開発と抵抗変化特性評価2021

    • Author(s)
      池内太志、林 侑介、藤平哲也、酒井 朗
    • Organizer
      第68回応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] 4端子平面型TiO2-xメモリスタ素子におけるゲート制御に基づくシナプス特性の変調2021

    • Author(s)
      安達健太、林 侑介、藤平哲也、酒井 朗
    • Organizer
      第68回応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] アモルファス酸化ガリウムを用いたメモリスタの抵抗変化特性およびシナプス特性2020

    • Author(s)
      上甲守治、池内太志、林 侑介、藤平哲也、酒井 朗
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] 4端子平面型 TiO2-xメモリスタ素子における酸素空孔分布2次元制御に基づくSTP・LTP特性の実装2020

    • Author(s)
      安達健太、三宅亮太郎、林 侑介、藤平哲也、酒井 朗
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Remarks] 生体の脳・神経系により近い人工シナプス素子を開発 4端子メモリスタ素子が高度な脳・神経機能を実現

    • URL

      https://resou.osaka-u.ac.jp/ja/research/2022/20220428_1

    • Related Report
      2022 Annual Research Report
  • [Remarks] 300℃超の高温に耐えうる抵抗変化型メモリ素子を アモルファス酸化ガリウムで実現!

    • URL

      https://resou.osaka-u.ac.jp/ja/research/2023/20230130_1

    • Related Report
      2022 Annual Research Report
  • [Patent(Industrial Property Rights)] メモリスタ、それを備えた半導体素子およびメモリスタを備えたアレイシステム2020

    • Inventor(s)
      林 侑介、藤平哲也、酒井 朗
    • Industrial Property Rights Holder
      林 侑介、藤平哲也、酒井 朗
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2020-214807
    • Filing Date
      2020
    • Related Report
      2020 Annual Research Report

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Published: 2020-04-28   Modified: 2025-01-30  

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