Light emitting diode using rare earth-doped amorphous oxide semiconductors on a glass substrate
| Project/Area Number |
20H02433
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Review Section |
Basic Section 26020:Inorganic materials and properties-related
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
Ide Keisuke 東京工業大学, 元素戦略MDX研究センター, 助教 (70752799)
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| Project Period (FY) |
2020-04-01 – 2023-03-31
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| Project Status |
Completed (Fiscal Year 2022)
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| Budget Amount *help |
¥18,330,000 (Direct Cost: ¥14,100,000、Indirect Cost: ¥4,230,000)
Fiscal Year 2022: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2021: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2020: ¥13,650,000 (Direct Cost: ¥10,500,000、Indirect Cost: ¥3,150,000)
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| Keywords | アモルファス酸化物半導体 / 蛍光体 / 発光ダイオード |
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| Outline of Research at the Start |
申請者はこれまで、低温プロセスでも高品質膜が作製できるというアモルファス酸化物半導体の特徴に着目し、希土類を添加することで明るく光る無機蛍光体薄膜の「室温作製」に成功し、しかも半導体としての優れた電気特性(移動度 ~10 cm2/Vs)を併せ持っていることを明らかにしてきた。本研究ではそれを発展させ、下記の研究に取り組む。1) AOS蛍光体の最適な組成を見出し、2) 添加した希土類が与える電気特性や欠陥形成への影響を明らかにし、3) セラミックスのような無機酸化物でも低プロセス温度で直流駆動型発光ダイオードを作製出来ることを実証する。
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| Outline of Final Research Achievements |
We have explored phosphor thin films that can be produced at room temperature by adding rare earths (Eu, Pr, Tb) to amorphous oxide semiconductors. By using them as light-emitting layers, we have demonstrated the fabrication of light-emitting diodes on glass substrates. By applying DC voltage, red, green, and pink luminescent colors were observed, depending on the rare earths. The relationship between the 4f levels of the rare earths and the host material was clarified using hard X-ray photoemission spectroscopy and resonant photoemission spectroscopy, and the luminescence mechanism was discussed.
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| Academic Significance and Societal Importance of the Research Achievements |
本研究で得られた希土類添加アモルファス酸化物半導体（AOS）は、電気伝導性と発光特性を併せ持つ、従来にない機能性材料である。今回の研究によって、発光ダイオードの発光層としての有用性が示された。この成果は、将来のフレキシブルエレクトロニクス実現に向けた重要な基礎技術となる可能性がある。またAOS中の希土類添加物の4f準位を実測した研究は他になく、学術的にも大きな意義があったと言える。
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Report
(4 results)
Research Products
(25 results)
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[Journal Article] Low Residual Carrier Density and High In-Grain Mobility in Polycrystalline Zn3N2 Films on a Glass Substrate2022
Author(s)
Kaiwen Li, Atsushi Shimizu, Xinyi He, Keisuke Ide*, Kota Hanzawa, Kosuke Matsuzaki, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Qun Zhang*, and Toshio Kamiya
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Journal Title
ACS Applied Electronic Materials
Volume: 4
Issue: 4
Pages: 2026-2031
DOI
Related Report
Peer Reviewed / Int'l Joint Research
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[Journal Article] Reversible 3D-2D structural phase transition and giant electronic modulation in non-equilibrium alloy semiconductor, lead-tin-selenide2021
Author(s)
Takayoshi Katase, Yudai Takahashi, Xinyi He, Terumasa Tadano, Keisuke Ide, Hideto Yoshida, Shiro Kawachi, Junichi Yamaura, Masato Sasase, Hidenori Hiramatsu, Hideo Hosono, and Toshio Kamiya
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Journal Title
Science Adv.
Volume: 7
Issue: 12
DOI
Related Report
Peer Reviewed / Open Access
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[Journal Article] Double charge polarity switching in Sb-doped SnSe with switchable substitution sites2020
Author(s)
Chihiro Yamamoto, Xinyi He, Takayoshi Katase, Keisuke Ide, Yosuke Goto, Yoshikazu Mizuguchi, Akane Samizo, Makoto Minohara, Shigenori Ueda, Hidenori Hiramatsu, Hideo Hosono, and Toshio Kamiya
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Journal Title
Adv. Funct. Mater.
Volume: 31
Issue: 8
Pages: 2008092-2008092
DOI
Related Report
Peer Reviewed
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