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Light emitting diode using rare earth-doped amorphous oxide semiconductors on a glass substrate

Research Project

Project/Area Number 20H02433
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Review Section Basic Section 26020:Inorganic materials and properties-related
Research InstitutionTokyo Institute of Technology

Principal Investigator

Ide Keisuke  東京工業大学, 元素戦略MDX研究センター, 助教 (70752799)

Project Period (FY) 2020-04-01 – 2023-03-31
Project Status Completed (Fiscal Year 2022)
Budget Amount *help
¥18,330,000 (Direct Cost: ¥14,100,000、Indirect Cost: ¥4,230,000)
Fiscal Year 2022: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2021: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2020: ¥13,650,000 (Direct Cost: ¥10,500,000、Indirect Cost: ¥3,150,000)
Keywordsアモルファス酸化物半導体 / 蛍光体 / 発光ダイオード
Outline of Research at the Start

申請者はこれまで、低温プロセスでも高品質膜が作製できるというアモルファス酸化物半導体の特徴に着目し、希土類を添加することで明るく光る無機蛍光体薄膜の「室温作製」に成功し、しかも半導体としての優れた電気特性(移動度 ~10 cm2/Vs)を併せ持っていることを明らかにしてきた。本研究ではそれを発展させ、下記の研究に取り組む。1) AOS蛍光体の最適な組成を見出し、2) 添加した希土類が与える電気特性や欠陥形成への影響を明らかにし、3) セラミックスのような無機酸化物でも低プロセス温度で直流駆動型発光ダイオードを作製出来ることを実証する。

Outline of Final Research Achievements

We have explored phosphor thin films that can be produced at room temperature by adding rare earths (Eu, Pr, Tb) to amorphous oxide semiconductors. By using them as light-emitting layers, we have demonstrated the fabrication of light-emitting diodes on glass substrates. By applying DC voltage, red, green, and pink luminescent colors were observed, depending on the rare earths. The relationship between the 4f levels of the rare earths and the host material was clarified using hard X-ray photoemission spectroscopy and resonant photoemission spectroscopy, and the luminescence mechanism was discussed.

Academic Significance and Societal Importance of the Research Achievements

本研究で得られた希土類添加アモルファス酸化物半導体(AOS)は、電気伝導性と発光特性を併せ持つ、従来にない機能性材料である。今回の研究によって、発光ダイオードの発光層としての有用性が示された。この成果は、将来のフレキシブルエレクトロニクス実現に向けた重要な基礎技術となる可能性がある。またAOS中の希土類添加物の4f準位を実測した研究は他になく、学術的にも大きな意義があったと言える。

Report

(4 results)
  • 2022 Annual Research Report   Final Research Report ( PDF )
  • 2021 Annual Research Report
  • 2020 Annual Research Report
  • Research Products

    (25 results)

All 2023 2022 2021 2020 Other

All Int'l Joint Research (2 results) Journal Article (6 results) (of which Int'l Joint Research: 1 results,  Peer Reviewed: 5 results,  Open Access: 1 results) Presentation (16 results) (of which Int'l Joint Research: 7 results,  Invited: 4 results) Remarks (1 results)

  • [Int'l Joint Research] Fudan University(中国)

    • Related Report
      2022 Annual Research Report
  • [Int'l Joint Research] Fudan University(中国)

    • Related Report
      2021 Annual Research Report
  • [Journal Article] Low-temperature-processable amorphous-oxide-semiconductor-based phosphors for durable light-emitting diodes2022

    • Author(s)
      Ide Keisuke、Watanabe Naoto、Katase Takayoshi、Sasase Masato、Kim Junghwan、Ueda Shigenori、Horiba Koji、Kumigashira Hiroshi、Hiramatsu Hidenori、Hosono Hideo、Kamiya Toshio
    • Journal Title

      Applied Physics Letters

      Volume: 121 Issue: 19 Pages: 192108-192108

    • DOI

      10.1063/5.0115384

    • Related Report
      2022 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Low Residual Carrier Density and High In-Grain Mobility in Polycrystalline Zn3N2 Films on a Glass Substrate2022

    • Author(s)
      Kaiwen Li, Atsushi Shimizu, Xinyi He, Keisuke Ide*, Kota Hanzawa, Kosuke Matsuzaki, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Qun Zhang*, and Toshio Kamiya
    • Journal Title

      ACS Applied Electronic Materials

      Volume: 4 Issue: 4 Pages: 2026-2031

    • DOI

      10.1021/acsaelm.2c00181

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Origins of the coloration from structure and valence state of bismuth oxide glasses2021

    • Author(s)
      Saitoh Akira、Hayashi Katsuki、Hanzawa Kota、Ueda Shigenori、Kawachi Shiro、Yamaura Jun-ichi、Ide Keisuke、Kim Junghwan、Tricot Gregory、Matsuishi Satoru、Mitsui Kazuki、Shimizu Tatsuki、Mori Masami、Hosono Hideo、Hiramatsu Hidenori
    • Journal Title

      Journal of Non-Crystalline Solids

      Volume: 560 Pages: 120720-120720

    • DOI

      10.1016/j.jnoncrysol.2021.120720

    • Related Report
      2021 Annual Research Report
  • [Journal Article] Ion substitution effect on defect formation in two-dimensional transition metal nitrides semiconductor, AETiN2 (AE = Ca, Sr, Ba)2021

    • Author(s)
      Xinyi He, Takayoshi Katase, Keisuke Ide, Hideo Hosono, and Toshio Kamiya
    • Journal Title

      Inorg. Chem.

      Volume: 60 Issue: 14 Pages: 10227-10234

    • DOI

      10.1021/acs.inorgchem.1c00526

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Reversible 3D-2D structural phase transition and giant electronic modulation in non-equilibrium alloy semiconductor, lead-tin-selenide2021

    • Author(s)
      Takayoshi Katase, Yudai Takahashi, Xinyi He, Terumasa Tadano, Keisuke Ide, Hideto Yoshida, Shiro Kawachi, Junichi Yamaura, Masato Sasase, Hidenori Hiramatsu, Hideo Hosono, and Toshio Kamiya
    • Journal Title

      Science Adv.

      Volume: 7 Issue: 12

    • DOI

      10.1126/sciadv.abf2725

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Double charge polarity switching in Sb-doped SnSe with switchable substitution sites2020

    • Author(s)
      Chihiro Yamamoto, Xinyi He, Takayoshi Katase, Keisuke Ide, Yosuke Goto, Yoshikazu Mizuguchi, Akane Samizo, Makoto Minohara, Shigenori Ueda, Hidenori Hiramatsu, Hideo Hosono, and Toshio Kamiya
    • Journal Title

      Adv. Funct. Mater.

      Volume: 31 Issue: 8 Pages: 2008092-2008092

    • DOI

      10.1002/adfm.202008092

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Presentation] アモルファス酸化物半導体における機能開拓の最前線2023

    • Author(s)
      井手啓介, 細野秀雄, 神谷利夫
    • Organizer
      第70回応用物理学会 春季学術講演会 シンポジウム
    • Related Report
      2022 Annual Research Report
    • Invited
  • [Presentation] 超高真空スパッタリング装置を用いた高移動度多結晶 Zn3N2 薄膜2022

    • Author(s)
      清水篤,井手啓介,片瀬貴義,平松秀典,細野秀雄,神谷利夫
    • Organizer
      薄膜材料デバイス研究会 第19回研究集会「新半導体材料・デバイス:SDGs実現へ向けて」
    • Related Report
      2022 Annual Research Report
  • [Presentation] ZnO中の水素複合欠陥2022

    • Author(s)
      HeXinyi,片瀬貴義,井手啓介,細野秀雄,神谷利夫
    • Organizer
      薄膜材料デバイス研究会 第19回研究集会「新半導体材料・デバイス:SDGs実現へ向けて」
    • Related Report
      2022 Annual Research Report
  • [Presentation] アモルファス 12CaO・7Al2O3 を用いた ReRAM2022

    • Author(s)
      門野太助,井手啓介,片瀬貴義,平松秀典,細野秀雄,神谷利夫
    • Organizer
      薄膜材料デバイス研究会 第19回研究集会「新半導体材料・デバイス:SDGs実現へ向けて」
    • Related Report
      2022 Annual Research Report
  • [Presentation] スパッタリング法によるアモルファス酸化ガリウム薄膜の作製とダイオー ド特性の評価2022

    • Author(s)
      嵯峨野太一,井手啓介,片瀬貴義,平松秀典,細野秀雄,神谷利夫
    • Organizer
      薄膜材料デバイス研究会 第19回研究集会「新半導体材料・デバイス:SDGs実現へ向けて」
    • Related Report
      2022 Annual Research Report
  • [Presentation] Suppressing Hydrogen Diffusion and Enhancing Reliability of Short-Channel InGaZnO Thin Film Transistors by Bottom-Gate Oxide Engineering2022

    • Author(s)
      K. Zhou,井手啓介,片瀬貴義,神谷利夫,B. Huang,P. Yen,T. Chang,S. M. Sze
    • Organizer
      薄膜材料デバイス研究会 第19回研究集会「新半導体材料・デバイス:SDGs実現へ向けて」
    • Related Report
      2022 Annual Research Report
  • [Presentation] Liwei Li,井手啓介,片瀬貴義,細野秀雄,神谷利夫Local bonding structures in amorphous oxide semiconductors studied by DFT and machine-learning potential2022

    • Author(s)
      Liwei Li,井手啓介,片瀬貴義,細野秀雄,神谷利夫
    • Organizer
      第60回日本セラミックス協会 セラミックス基礎科学討論会
    • Related Report
      2022 Annual Research Report
  • [Presentation] Electronic Structures and Defects Analysis of Amorphous Oxide Semiconductor toward IGZO Display Application2022

    • Author(s)
      Keisuke Ide
    • Organizer
      International Display Workshops
    • Related Report
      2022 Annual Research Report
    • Invited
  • [Presentation] Transport properties of Zn3N2 investigated by ionic liquid gated electric-double-layer transistors2021

    • Author(s)
      Kaiwen Li, Kota Hanzawa, Keisuke Ide, Kosuke Matsuzaki, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Zhang Qun, Toshio Kamiya
    • Organizer
      Materials Research Meeting 2021
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Fabrication and characterization of resistive random-access memory device using amorphous 12CaO Al2O32021

    • Author(s)
      Tasuke Kadono, Keisuke Ide, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya
    • Organizer
      Materials Research Meeting 2021
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Room-temperature fabrication of ionic liquid gated Zn3N2 electric double layer transistors with non-degenerate channel electron density2021

    • Author(s)
      Kaiwen Li, Kota Hanzawa, Keisuke Ide, Kosuke Matsuzaki, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Zhang Qun, Toshio Kamiya
    • Organizer
      Materials Research Meeting 2021
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Effect of hydrogen doping on transport property of ultrawide bandgap amorphous oxide semiconductor, amorphous Ga-O2021

    • Author(s)
      Keisuke Ide, Yukari Kasai, Akihiro Kato, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya
    • Organizer
      The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12)
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Fabrication of Zn3N2 electric double layer transistor by ionic liquid gating2021

    • Author(s)
      Kaiwen Li, Kota Hanzawa, Keisuke Ide, Kosuke Matsuzaki, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Qun Zhang, Toshio Kamiya
    • Organizer
      The Twelfth International Conference on the Science and Technology for Advanced Ceramics
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Rare-earth and transition metal doping for amorphous oxide semiconductor2021

    • Author(s)
      Keisuke Ide, Hideo Hosono, Toshio Kamiya
    • Organizer
      Material Research Meeting 2021
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] 水素ドープアモルファス酸化ガリウムを用いた薄膜トランジスタ,2020

    • Author(s)
      加藤昭宏, 笠井悠莉華, 井手啓介, 片瀬貴義, 平松 秀典, 細野 秀雄, 神谷 利夫
    • Organizer
      第67回応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] Electronic defects in AOS and recent development2020

    • Author(s)
      K. Ide, H. Hosono, T. Kamiya
    • Organizer
      The 27th International Workshop on Active-Matrix Flat panel Displays and Devices, Kyoto
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research / Invited
  • [Remarks] 神谷研究室

    • URL

      https://www.msl.titech.ac.jp/~tkamiya

    • Related Report
      2022 Annual Research Report 2021 Annual Research Report 2020 Annual Research Report

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Published: 2020-04-28   Modified: 2024-01-30  

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