| Budget Amount *help |
¥17,680,000 (Direct Cost: ¥13,600,000、Indirect Cost: ¥4,080,000)
Fiscal Year 2022: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2021: ¥6,110,000 (Direct Cost: ¥4,700,000、Indirect Cost: ¥1,410,000)
Fiscal Year 2020: ¥6,110,000 (Direct Cost: ¥4,700,000、Indirect Cost: ¥1,410,000)
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| Outline of Final Research Achievements |
This study has discovered a new method for growing two-dimensional semiconductor crystals with nanoscale junction structures, which was previously assumed to be impossible. The technique used was organic metalorganic chemical vapor deposition (MOCVD), where high vapor pressure Mo and W precursors were supplied to the growth chamber sequentially. This resulted in the creation of junction widths ranging from sub-nanometers to a few nanometers on hexagonal boron nitride substrates. The same approach was successful in creating stacked structures with junction interfaces. Through first-principles calculations and spectroscopic measurements, the electronic states and optical properties of these new nanostructures were thoroughly examined and verified.
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