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Development of GeSn-based NIR sensing devices

Research Project

Project/Area Number 20H02620
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Review Section Basic Section 29020:Thin film/surface and interfacial physical properties-related
Research InstitutionKwansei Gakuin University (2021-2022)
Osaka University (2020)

Principal Investigator

Hosoi Takuji  関西学院大学, 工学部, 准教授 (90452466)

Project Period (FY) 2020-04-01 – 2023-03-31
Project Status Completed (Fiscal Year 2022)
Budget Amount *help
¥17,420,000 (Direct Cost: ¥13,400,000、Indirect Cost: ¥4,020,000)
Fiscal Year 2022: ¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2021: ¥8,580,000 (Direct Cost: ¥6,600,000、Indirect Cost: ¥1,980,000)
Fiscal Year 2020: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
KeywordsGeSn / 赤外線 / 結晶化 / レーザー / 赤外センシング / センシング / 薄膜トランジスタ / 赤外光学素子 / 赤外線光学素子 / CMOS
Outline of Research at the Start

GeSn半導体は赤外域の発光/受光素子および高移動度CMOS材料として有望である。本研究では、非晶質透明基板上でのGeSn単結晶液相成長技術を発展させ、結晶欠陥・不純物を極限まで低減した高品質GeSn形成、そしてSn組成傾斜をつけたGeSn横型ダブルへテロ構造の作製に取り組み、GeSn赤外光学素子とCMOS回路を集積化した赤外イメージング/センシングプラットフォームの創出を目指す。

Outline of Final Research Achievements

To develop an infrared sensing platform using germanium-tin (GeSn) semiconductor, we investigated the lateral growth of high-quality GeSn single crystals by laser crystallization. After processing an amorphous GeSn layer into a wire shape on a quartz substrate and capping it with a SiO2 layer, we successfully formed the mm-long single-crystalline GeSn wires from end to end by scanning a laser beam. PL and Raman analysis revealed that the formed GeSn wire has excellent crystallinity. In addition, a horizontal double heterostructure with a high Sn concentration GeSn region in the center of the wire was fabricated by scanning the laser twice; Once the entire GeSn wire was crystallized by 1st laser scanning, and 2nd scan was done in the opposite direction and was terminated at the center of the wire.

Academic Significance and Societal Importance of the Research Achievements

GeSnは集積回路や赤外光学素子として優れた物性を持つと予想される一方で、高品質なGeSn単結晶が困難である。本研究では、高品質GeSn単結晶の横方向液相成長をレーザー走査で行うGeSnレーザー結晶化技術をさらに発展させ、光吸収キャップ層を用いることによるGeSnパターン依存性の解消、レーザー走査の工夫によりGeSnダブルヘテロ構造の作製、などを実現した。また、石英基板に限らずSi基板上でもGeSnレーザー結晶化が可能であることも見出した。

Report

(4 results)
  • 2022 Annual Research Report   Final Research Report ( PDF )
  • 2021 Annual Research Report
  • 2020 Annual Research Report
  • Research Products

    (9 results)

All 2023 2022 2021

All Journal Article (2 results) (of which Peer Reviewed: 2 results,  Open Access: 1 results) Presentation (7 results) (of which Int'l Joint Research: 3 results,  Invited: 1 results)

  • [Journal Article] Controllability of luminescence wavelength from GeSn wires fabricated by laser-induced local liquid phase crystallization on quartz substrates2023

    • Author(s)
      T. Shimura, R. Yamaguchi, N. Tabuchi, M. Kondoh, M. Kuniyoshi, T. Hosoi, T. Kobayashi and H. Watanabe
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 62 Issue: SC Pages: SC1083-SC1083

    • DOI

      10.35848/1347-4065/acb9a2

    • Related Report
      2022 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Fabrication and Luminescence Characterization of Ge Wires with Uniaxial Tensile Strains Applied using Internal Stresses in Deposited Metal Thin Films2023

    • Author(s)
      Shimura Takayoshi、Tanaka Shogo、Hosoi Takuji、Watanabe Heiji
    • Journal Title

      Journal of Electronic Materials

      Volume: - Issue: 8 Pages: 5053-5058

    • DOI

      10.1007/s11664-023-10309-w

    • Related Report
      2022 Annual Research Report
    • Peer Reviewed
  • [Presentation] Fabrication of Tensile-strained Single-crystalline GeSn Wires on Amorphous Quartz Substrates by Local Liquid-phase Crystallization2022

    • Author(s)
      T. Shimura, H. Oka, T. Hosoi, Y. Imai, S. Kimura, and H. Watanabe
    • Organizer
      The 8th International Symposium on Advanced Science and Technology of Silicon Materials
    • Related Report
      2022 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Controllability of Luminescence Wavelength from GeSn Wires Fabricated by Laser Zone Melting on Quartz Substrates2022

    • Author(s)
      T. Shimura, R. Yamaguchi, N. Tabuchi, M. Kondo, M. Kuniyoshi, T. Hosoi, T. Kobayashi, H. Watanabe
    • Organizer
      2022 International Conference on Solid State Devices and Materials(SSDM 2022)
    • Related Report
      2022 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Fabrication and Luminescence Characterization of Uniaxial Tensile-strained Ge Wires using Internal Stress in Metal Thin Films2022

    • Author(s)
      T. Shimura, S. Tanaka, H. Watanabe, T. Hosoi
    • Organizer
      The 19th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP19)
    • Related Report
      2022 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 光吸収層を有する石英基板上GeSn細線のレーザー溶融結晶化2022

    • Author(s)
      田淵 直人, 山口 凌雅, 近藤 雅斗, 國吉 望月, 細井 卓治, 小林 拓真, 志村 考功, 渡部 平司
    • Organizer
      電子デバイス界面テクノロジー研究会-材料・プロセス・デバイス特性の物理-(第27回研究会)
    • Related Report
      2021 Annual Research Report
  • [Presentation] 局所液相成長法によって作製した単結晶GeSn細線の受光・発光特性2022

    • Author(s)
      志村 考功, 細井 卓治, 小林 拓真, 渡部 平司
    • Organizer
      レーザー学会学術講演会第42回年次大会
    • Related Report
      2021 Annual Research Report
    • Invited
  • [Presentation] 石英基板上GeSn細線のレーザー溶融結晶化における光吸収層の検討2021

    • Author(s)
      田淵 直人, 國吉 望月, 細井 卓治, 小林 拓真, 志村 考功, 渡部 平司
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Related Report
      2021 Annual Research Report
  • [Presentation] レーザー溶融結晶化による石英基板上単結晶GeSn作製技術の高度化2021

    • Author(s)
      國吉 望月, 田淵 直人, 細井 卓治, 志村 考功, 渡部 平司
    • Organizer
      第68回応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report

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Published: 2020-04-28   Modified: 2024-01-30  

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