| Project/Area Number |
20J14755
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| Research Category |
Grant-in-Aid for JSPS Fellows
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| Allocation Type | Single-year Grants |
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| Section | 国内 |
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| Review Section |
Basic Section 26020:Inorganic materials and properties-related
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| Research Institution | Hokkaido University |
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Principal Investigator |
KIM GOWOON 北海道大学, 情報科学研究科, 特別研究員(DC2)
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| Project Period (FY) |
2020-04-24 – 2022-03-31
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| Project Status |
Completed (Fiscal Year 2021)
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| Budget Amount *help |
¥2,100,000 (Direct Cost: ¥2,100,000)
Fiscal Year 2021: ¥1,000,000 (Direct Cost: ¥1,000,000)
Fiscal Year 2020: ¥1,100,000 (Direct Cost: ¥1,100,000)
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| Keywords | Tungsten oxide / Thermal conductivity / Electrical conductivity / Oxygen deficiency / Atomic defect tunnel / Epitaxial film / thermopower / Thermal transistor / Transition metal oxide / 1D atomic defect tunnel / Pulsed laser deposition |
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| Outline of Research at the Start |
The thermal transistor proposed in this research, which simultaneously electrically controls the heat flow and current, causes metal-insulator transition at room temperature by the current necessary for the electrochemical Redox reaction, and simultaneously controls the thermal resistance.
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| Outline of Annual Research Achievements |
In this research, I introduced oxygen concentration by electrochemical redox treatment and controlled the electrical, optical, structural properties.
The electrical conductivity was controlled from ~400 S cm－1 to an insulator, and the optical transmission at 1.5μm in wavelength was controlled in the range of 35 － 70%. This result would be useful for developing metal oxide epitaxial film-based electrochemical optoelectronic devices. [1, 2]
[1] G. Kim* et al., ACS. Appl. Electron. Mater. 3, 3619-3624 (2021)
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| Research Progress Status |
令和3年度が最終年度であるため、記入しない。
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| Strategy for Future Research Activity |
令和3年度が最終年度であるため、記入しない。
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