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Investigation of defect structure and the mechanism of defect introduction in wide bandgap semiconductor crystals by processing

Research Project

Project/Area Number 20K05176
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Review Section Basic Section 26050:Material processing and microstructure control-related
Research InstitutionJapan Fine Ceramics Center

Principal Investigator

Ishikawa Yukari  一般財団法人ファインセラミックスセンター, その他部局等, 主幹研究員 (60416196)

Co-Investigator(Kenkyū-buntansha) 菅原 義弘  一般財団法人ファインセラミックスセンター, その他部局等, 上級研究員 (70466291)
姚 永昭  一般財団法人ファインセラミックスセンター, その他部局等, 主任研究員 (80523935)
Project Period (FY) 2020-04-01 – 2023-03-31
Project Status Completed (Fiscal Year 2022)
Budget Amount *help
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2022: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2021: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2020: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
KeywordsGaN / 多光子励起顕微鏡 / インデンテーション / スクラッチ / TEM / STEM / ビッカース / らせん転位 / 加工導入欠陥 / 転位 / 多光子顕微鏡
Outline of Research at the Start

パワーデバイスに適したワイドバンドギャップ半導体は、化学的に安定かつ高硬度・脆性材料であるのでウエハ加工による導入欠陥の除去が難しく、エピ膜品質の著しい低下を引き起こす。従来の加工導入欠陥の構造評価は極表面に限られており、正確な3次元構造の理解が難しく、除去量の同定・欠陥の導入を抑えた加工法の構築が難しかった。本提案では多光子顕微鏡を用いて加工導入欠陥の3次元構造を解明する。また、加工中の導入欠陥構造の変化をその場観察することで欠陥導入メカニズムを理解する。これらの結果を基に科学的根拠に基づいて加工導入欠陥を低減する指針を得ることを目的とする。

Outline of Final Research Achievements

Indentation and scratching were performed under controlling load and indenter speed on (0001) GaN single crystal and investigated the structure of dislocation pattern introduced by indentation and scratching. The structure of dislocation pattern was not changed by load, but the size of dislocation pattern is linearly increased with imprint size. Because the imprint size is proportional to the square root of load, the size of dislocation pattern can be described as the function of load. The calculated size of dislocation pattern under assumption that the size was determined its energy to be equal to the energy given by indentation, well consisted with the experimental results.

Academic Significance and Societal Importance of the Research Achievements

転位密度が低く、粒界や結晶粒がないGaN単結晶を使って圧入時の荷重と圧入で発生した転位の密度、種類、サイズの相関が得られたので材料そのものの硬さとは何か?という学術的問いへの回答を構築するための基礎データを取得したものと言える。また、表面形状の変化と転位サイズに相関があることは、表面形状を取得すると転位伸展深さが推定可能なことを示唆しており、ウエハ加工の分野で必須とされる非破壊加工変質層厚評価技術の実現が期待される。

Report

(4 results)
  • 2022 Annual Research Report   Final Research Report ( PDF )
  • 2021 Research-status Report
  • 2020 Research-status Report
  • Research Products

    (11 results)

All 2022 2021 2020

All Journal Article (6 results) (of which Peer Reviewed: 6 results,  Open Access: 1 results) Presentation (5 results) (of which Int'l Joint Research: 1 results,  Invited: 1 results)

  • [Journal Article] Size of dislocation patterns induced by Vickers indentation in hydride vapor-phase epitaxy GaN2022

    • Author(s)
      Ishikawa Yukari、Sugawara Yoshihiro、Yao Yongzhao、Takeda Hidetoshi、Aida Hideo、Tadatomo Kazuyuki
    • Journal Title

      Journal of Applied Physics

      Volume: 131 Issue: 22 Pages: 225303-225303

    • DOI

      10.1063/5.0084495

    • Related Report
      2022 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Linear dependence of dislocation pattern size on the imprint width and scratch width on (0001) GaN2022

    • Author(s)
      Ishikawa Yukari、Sugawara Yoshihiro、Yao Yongzhao、Takeda Hidetoshi、Aida Hideo、Tadatomo Kazuyuki
    • Journal Title

      Journal of Physics D: Applied Physics

      Volume: 55 Issue: 48 Pages: 485304-485304

    • DOI

      10.1088/1361-6463/ac96fd

    • Related Report
      2022 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Generation of dislocations from scratches on GaN formed during wafer fabrication and dislocation reactions during homoepitaxial growth2021

    • Author(s)
      Ishikawa Yukari、Sugawara Yoshihiro、Yao Yongzhao、Noguchi Naoto、Takeda Yukihisa、Yamada Hisashi、Shimizu Mitsuaki、Tadatomo Kazuyuki
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 60 Issue: 11 Pages: 115501-115501

    • DOI

      10.35848/1347-4065/ac2ae5

    • Related Report
      2021 Research-status Report
    • Peer Reviewed
  • [Journal Article] Screw dislocations on $\left\{1\bar{2}12\right\}$ pyramidal planes induced by Vickers indentation in HVPE GaN2020

    • Author(s)
      Ishikawa Yukari、Sugawara Yoshihiro、Yokoe Daisaku、Yao Yongzhao
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 59 Issue: 9 Pages: 091005-091005

    • DOI

      10.35848/1347-4065/abb00c

    • Related Report
      2020 Research-status Report
    • Peer Reviewed
  • [Journal Article] Identification of fine structures at the surface of epi-ready GaN wafer observed by confocal differential interference contrast microscopy2020

    • Author(s)
      Ishikawa Yukari、Sugawara Yoshihiro、Sato Koji、Yao Yongzhao、Okada Narihito、Tadatomo Kazuyuki
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 59 Issue: 10 Pages: 100907-100907

    • DOI

      10.35848/1347-4065/abbb23

    • Related Report
      2020 Research-status Report
    • Peer Reviewed
  • [Journal Article] Correlation between structural properties and nonradiative recombination behaviors of threading dislocations in freestanding GaN substrates grown by hydride vapor phase epitaxy2020

    • Author(s)
      Yao Yongzhao、Sugawara Yoshihiro、Yokoe Daisaku、Sato Koji、Ishikawa Yukari、Okada Narihito、Tadatomo Kazuyuki、Sudo Masaki、Kato Masashi、Miyoshi Makoto、Egawa Takashi
    • Journal Title

      CrystEngComm

      Volume: 22 Issue: 48 Pages: 8299-8312

    • DOI

      10.1039/d0ce01344g

    • Related Report
      2020 Research-status Report
    • Peer Reviewed / Open Access
  • [Presentation] Linear relationship between dislocation pattern size induced by Vickers indentation and imprint width on (0001) GaN2022

    • Author(s)
      Yukari Ishikawa, Yoshihiro Sugawara, Yongzhao Yao, Syusui Ogawa, Daisaku yokoe, Hidetoshi Takeda, Hideo Aida, Kazuyuki Tadatomo
    • Organizer
      19th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors
    • Related Report
      2022 Annual Research Report
    • Int'l Joint Research
  • [Presentation] ワイドバンドギャップ半導体結晶の転位検出と解析2022

    • Author(s)
      石川由加里、姚 永昭、菅原 義弘、佐藤 功二、横江 大作
    • Organizer
      日本金属学会2022年秋期(第171回)講演大会
    • Related Report
      2022 Annual Research Report
    • Invited
  • [Presentation] (0001)GaNウエハ上のsクラッチ幅と転位パタンサイズの線形増加2022

    • Author(s)
      石川由加里、菅原 義弘、姚 永昭、武田秀俊、會田英雄、只友一行
    • Organizer
      応用物理学会 先進パワー半導体分科会「第9回講演会」
    • Related Report
      2022 Annual Research Report
  • [Presentation] HVPE-GaN(0001)基板にVickers圧入で生じた転位構造2021

    • Author(s)
      石川由加里,横江大作,菅原義弘,姚永昭
    • Organizer
      応用物理学会 2021年第82回秋季学術講演会
    • Related Report
      2021 Research-status Report
  • [Presentation] GaN結晶のビッカース圧痕周囲の転位の広がりと構造2020

    • Author(s)
      石川由加里,横江大作,菅原義弘,姚永昭
    • Organizer
      日本機械学会
    • Related Report
      2020 Research-status Report

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Published: 2020-04-28   Modified: 2024-01-30  

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