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Theoretical Study on Low-Power Neural Network Devices with High-Error Nonvolatile Memory

Research Project

Project/Area Number 20K12003
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Review Section Basic Section 61040:Soft computing-related
Research InstitutionNational Institute of Advanced Industrial Science and Technology

Principal Investigator

ARAI Hiroko  国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員 (50431755)

Project Period (FY) 2020-04-01 – 2023-03-31
Project Status Completed (Fiscal Year 2022)
Budget Amount *help
¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Fiscal Year 2022: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2021: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2020: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
KeywordsMRAM / 磁性メモリ / 書き込みエラー率 / WER / 磁気メモリ / 電圧駆動MRAM / 書き込みエラー / 保持エラー / 電圧書き込み / 確率密度関数 / 不揮発メモリ
Outline of Research at the Start

シリコンデバイスの微細化技術が限界に近づくにつれて素子ばらつきに起因したエラー発生
の増加や歩留まりの低下が懸念されている。またメモリデバイスでは一般に低消費電力での
動作では信頼性を高くできないことが問題である。本研究では、信頼性の低い動作条件でメ
モリデバイスを積極運用することで低消費電力化を実現する学習デバイスを提案する。

Outline of Final Research Achievements

In order to utilize memory devices with high error rate, we conducted a theoretical research on voltage-controlled magnetic random access memory (VC-MRAM), focusing on write and retention errors. The probability density function of the write error rate was derived under the assumption of a material parameter variations. Also, characteristic time between retention error and write error was discussed.

Academic Significance and Societal Importance of the Research Achievements

エラー率の高いメモリを利用したメモリシステムの実現に向けて、メモリシステムの設計、運用に必要となる基礎的な情報を提供できる理論的枠組みを構築した。

Report

(4 results)
  • 2022 Annual Research Report   Final Research Report ( PDF )
  • 2021 Research-status Report
  • 2020 Research-status Report
  • Research Products

    (5 results)

All 2023 2022 2021

All Journal Article (3 results) (of which Peer Reviewed: 3 results,  Open Access: 3 results) Presentation (2 results)

  • [Journal Article] Characteristic time of transition from write error to retention error in voltage-controlled magnetoresistive random-access memory2023

    • Author(s)
      Arai Hiroko、Imamura Hiroshi
    • Journal Title

      Journal of Magnetism and Magnetic Materials

      Volume: 572 Pages: 170624-170624

    • DOI

      10.1016/j.jmmm.2023.170624

    • Related Report
      2022 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Distribution of write error rate of spin-transfer-torque magnetoresistive random access memory caused by a distribution of junction parameters2022

    • Author(s)
      Imamura Hiroshi、Arai Hiroko、Matsumoto Rie
    • Journal Title

      Journal of Magnetism and Magnetic Materials

      Volume: 563 Pages: 170012-170012

    • DOI

      10.1016/j.jmmm.2022.170012

    • Related Report
      2022 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Probability Distribution of the Write-Error Rate of Voltage-Controlled Magnetoresistive Random-Access Memories2021

    • Author(s)
      Arai Hiroko、Hirofuchi Takahiro、Imamura Hiroshi
    • Journal Title

      Physical Review Applied

      Volume: 16 Issue: 6 Pages: 1-13

    • DOI

      10.1103/physrevapplied.16.064068

    • Related Report
      2021 Research-status Report
    • Peer Reviewed / Open Access
  • [Presentation] 書き込みエラー率分布を考慮した不揮発メインメモリシステムによるビット化け発生数の評価2022

    • Author(s)
      荒井 礼子, 斉藤 大貴, 佐藤 幸紀, 広渕 崇宏, 今村 裕志
    • Organizer
      第83回応用物理学会秋季学術講演会
    • Related Report
      2022 Annual Research Report
  • [Presentation] 電圧駆動MRAM における書き込みエラー率の確率分布に関する理論的研究2021

    • Author(s)
      荒井 礼子, 広渕 崇宏, 今村 裕志
    • Organizer
      応用物理学会
    • Related Report
      2021 Research-status Report

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Published: 2020-04-28   Modified: 2024-01-30  

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