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Realize of GeSn/Ge vertical nanowire and its application to next generation transitor

Research Project

Project/Area Number 20K14796
Research Category

Grant-in-Aid for Early-Career Scientists

Allocation TypeMulti-year Fund
Review Section Basic Section 21060:Electron device and electronic equipment-related
Research InstitutionNational Institute for Materials Science

Principal Investigator

MATSUMURA Ryo  国立研究開発法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, 研究員 (90806358)

Project Period (FY) 2020-04-01 – 2023-03-31
Project Status Completed (Fiscal Year 2022)
Budget Amount *help
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2022: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2021: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2020: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Keywords結晶成長 / 電子デバイス / 光学デバイス / 半導体 / ナノワイヤ / ゲルマニウム / ゲルマニウムスズ
Outline of Research at the Start

トンネル電界効果トランジスタ(TFET)は、従来のMOS電界効果トランジスタ(MOSFET)に比べて非常に急峻なスイッチング特性を示すことが期待されており、次世代電子デバイスとして注目されている。申請者は良好な動作特性を有するTFETを実現するために、ソース-チャネル領域に縦型ヘテロ接合を有する「GeSn/Ge縦型ヘテロ接合ナノワイヤTFET」を着想した。TFETの持つ「オン時のトンネル電流の向上」と「オフ時の漏れ電流の低減」という相反する二つの要求を、それぞれ「GeSn/Geヘテロ接合によるトンネル効率の向上」と「縦型ナノワイヤ構造によるチャネル層の完全空乏化」というアプローチで克服する。

Outline of Final Research Achievements

In order to achieve the next generation of electronics, peripheral technology development for Ge-based thin film and heterostructure growth and device application was conducted. Bottom-up growth of Ge-based heterojunctions was achieved, along with the development of a non-equilibrium high-speed CW laser annealing method, which enabled the realization of Ge-based thin films with high crystal quality and strain. Band structure analysis was carried out using photoluminescence and optical absorption measurements, and an increase in luminescence efficiency and modulation of the bandgap were demonstrated.

Furthermore, in terms of device technology, a steep vertical p/n junction was realized, and a high-quality Al2O3 gate stack was achieved using atomic layer deposition.

Academic Significance and Societal Importance of the Research Achievements

本研究は、次世代エレクトロニクスに必要な高性能トランジスタ等の電子デバイスの基盤材料を開発することを目的に研究を行った。実現した材料は、良好な電子特性のみならず、良好な光学特性も有することが明らかになったため、電子デバイスだけでなく、光学デバイスにも応用可能と期待できる。GeはSiと同じIV族材料であり、従来のSi-LSI技術との整合性も高く、光学材料を組み込んだ光電融合LSIへの応用も可能となることから、幅広い応用範囲に波及する意義ある研究成果である。

Report

(4 results)
  • 2022 Annual Research Report   Final Research Report ( PDF )
  • 2021 Research-status Report
  • 2020 Research-status Report
  • Research Products

    (21 results)

All 2023 2022 2021 2020

All Journal Article (13 results) (of which Peer Reviewed: 10 results) Presentation (8 results) (of which Int'l Joint Research: 3 results)

  • [Journal Article] Synthesis of Large-Area GeS Thin Films with the Assistance of Pre-deposited Amorphous Nanostructured GeS Films: Implications for Electronic and Optoelectronic Applications2023

    • Author(s)
      Zhang Qinqiang、Matsumura Ryo、Fukata Naoki
    • Journal Title

      ACS Applied Nano Materials

      Volume: xxxx Issue: 8 Pages: 6920-6928

    • DOI

      10.1021/acsanm.3c00669

    • Related Report
      2022 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Highly strained and heavily doped germanium thin films by non-equilibrium high-speed CW laser annealing for optoelectronic applications2023

    • Author(s)
      Saputro Rahmat Hadi、Maeda Tatsuro、Matsumura Ryo、Fukata Naoki
    • Journal Title

      Materials Science in Semiconductor Processing

      Volume: 162 Pages: 107516-107516

    • DOI

      10.1016/j.mssp.2023.107516

    • Related Report
      2022 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Direct Detection of Free H2 Outgassing in Blisters Formed in Al2O3 Atomic Layers Deposited on Si and Methods of Its Prevention2022

    • Author(s)
      Matsumura Ryo、Fukata Naoki
    • Journal Title

      ACS Applied Materials and Interfaces

      Volume: 14 Issue: 1 Pages: 1472-1477

    • DOI

      10.1021/acsami.1c20660

    • Related Report
      2022 Annual Research Report
  • [Journal Article] Crystallization Of Tensile Strained n-Type Ge By Continuous Wave Laser Annealing2022

    • Author(s)
      Saputro Rahmat Hadi、Matsumura Ryo、Fukata Naoki
    • Journal Title

      ECS Transactions

      Volume: 108 Issue: 5 Pages: 79-82

    • DOI

      10.1149/10805.0079ecst

    • Related Report
      2022 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Formation of Free Hydrogen Gas By Annealing ALD-Al<sub>2</sub>O<sub>3</sub>/Si Stacked Structure2022

    • Author(s)
      Matsumura Ryo、Fukata Naoki
    • Journal Title

      ECS Transactions

      Volume: 108 Issue: 5 Pages: 57-61

    • DOI

      10.1149/10805.0057ecst

    • Related Report
      2022 Annual Research Report
  • [Journal Article] Dopant Redistribution in High-Temperature-Grown Sb-Doped Ge Epitaxial Films2021

    • Author(s)
      Saputro Rahmat Hadi、Matsumura Ryo、Fukata Naoki
    • Journal Title

      Crystal Growth and Design

      Volume: 21 Issue: 11 Pages: 6523-6528

    • DOI

      10.1021/acs.cgd.1c00966

    • Related Report
      2021 Research-status Report
    • Peer Reviewed
  • [Journal Article] Growth of SiGe thin films with uniform and non-uniform Si concentration profiles on insulating substrates by high-speed continuous wave laser annealing2021

    • Author(s)
      Matsumura Ryo、Ishii Satoshi、Fukata Naoki
    • Journal Title

      Materials Science in Semiconductor Processing

      Volume: 134 Pages: 106024-106024

    • DOI

      10.1016/j.mssp.2021.106024

    • Related Report
      2021 Research-status Report
    • Peer Reviewed
  • [Journal Article] Self-organized〈1 0 0〉direction growth of germanium film on insulator obtained by high speed continuous wave laser annealing2021

    • Author(s)
      Matsumura Ryo、Fukata Naoki
    • Journal Title

      Materials Letters

      Volume: 288 Pages: 129328-129328

    • DOI

      10.1016/j.matlet.2021.129328

    • Related Report
      2021 Research-status Report 2020 Research-status Report
    • Peer Reviewed
  • [Journal Article] Epitaxial Growth of Highly Sb-Doped Ge on p-Ge (100) for Vertical Transistor Applications2021

    • Author(s)
      Saputro Rahmat Hadi、Matsumura Ryo、Fukata Naoki
    • Journal Title

      ECS Transactions

      Volume: 102 Issue: 2 Pages: 147-150

    • DOI

      10.1149/10202.0147ecst

    • Related Report
      2021 Research-status Report
    • Peer Reviewed
  • [Journal Article] Growth of High Sn Concentration Germanium-Tin Films on Insulators by Microsecond Laser Annealing2021

    • Author(s)
      Matsumura Ryo、Fukata Naoki
    • Journal Title

      ECS Transactions

      Volume: 102 Issue: 2 Pages: 141-146

    • DOI

      10.1149/10202.0141ecst

    • Related Report
      2021 Research-status Report
  • [Journal Article] 高速CWレーザーアニール法を用いたGeおよびGeSn材料の結晶成長2021

    • Author(s)
      松村 亮, 深田 直樹
    • Journal Title

      電子デバイス界面テクノロジー研究会材料・プロセス・デバイス特性の物理プロシーディング集

      Volume: - Pages: 63-66

    • Related Report
      2020 Research-status Report
    • Peer Reviewed
  • [Journal Article] Sb 添加Ge 縦型pn ダイオードの電気特性に及ぼす基板加熱堆積の効果2021

    • Author(s)
      ラハマト ハディ サプトロ, 松村 亮, 深田 直樹
    • Journal Title

      電子デバイス界面テクノロジー研究会材料・プロセス・デバイス特性の物理プロシーディング集

      Volume: - Pages: 133-136

    • Related Report
      2020 Research-status Report
    • Peer Reviewed
  • [Journal Article] Growth of Tensile Strained Poly Germanium Thin Film on Glass Substrates by High Speed Continuous Wave Laser Annealing, and its Application to Germanium-Tin2020

    • Author(s)
      Matsumura Ryo、Fukata Naoki
    • Journal Title

      ECS Journal of Solid State Science and Technology

      Volume: 9 Issue: 6 Pages: 063002-063002

    • DOI

      10.1149/2162-8777/aba4f1

    • Related Report
      2020 Research-status Report
    • Peer Reviewed
  • [Presentation] Realization of Highly-Strained n-type Ge-on-Insulator by CW Laser Annealing2022

    • Author(s)
      R Hadi Saputro, Ryo Matsumura, Naoki Fukata
    • Organizer
      SSDM
    • Related Report
      2022 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Optical properties of highly strained n-Ge films grown by CW laser annealing2022

    • Author(s)
      R Hadi Saputro, Ryo Matsumura, Naoki Fukata
    • Organizer
      応用物理学会
    • Related Report
      2022 Annual Research Report
  • [Presentation] Growth of high Sn concentration Germanium-tin films on insulators by microsecond laser annealing2021

    • Author(s)
      MATSUMURA, Ryo, FUKATA, Naoki
    • Organizer
      239th ECS Meeting
    • Related Report
      2021 Research-status Report
    • Int'l Joint Research
  • [Presentation] Epitaxial Growth of Highly Sb-Doped Ge on p-Ge (100) for Vertical Transistor Formation2021

    • Author(s)
      Saputro Rahmat Hadi, MATSUMURA, Ryo, FUKATA, Naoki
    • Organizer
      239th ECS Meeting
    • Related Report
      2021 Research-status Report
    • Int'l Joint Research
  • [Presentation] 高速CWレーザーアニール法を用いたGeおよびGeSn材料の結晶成&#11985;2021

    • Author(s)
      松村 亮, 深田 直樹
    • Organizer
      電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理― (第26回研究会)
    • Related Report
      2021 Research-status Report
  • [Presentation] Sb添加Ge縦型pnダイオードの電気特性に及ぼす基板加熱堆積の効果2021

    • Author(s)
      サプトロ ラハマト ハディ, 松村 亮, 深田 直樹
    • Organizer
      第26回電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理―
    • Related Report
      2021 Research-status Report
  • [Presentation] 高速CWレーザーアニール法を用いたGeおよびGeSn材料の結晶成長2021

    • Author(s)
      松村 亮, 深田 直樹
    • Organizer
      電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理― (第26回研究会)
    • Related Report
      2020 Research-status Report
  • [Presentation] Sb添加Ge縦型pnダイオードの電気特性に及ぼす基板加熱堆積の効果. 第26回電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理2021

    • Author(s)
      サプトロ ラハマト ハディ, 松村 亮, 深田 直樹
    • Organizer
      電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理― (第26回研究会)
    • Related Report
      2020 Research-status Report

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Published: 2020-04-28   Modified: 2024-01-30  

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