| Project/Area Number |
20K15146
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| Research Category |
Grant-in-Aid for Early-Career Scientists
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| Allocation Type | Multi-year Fund |
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| Review Section |
Basic Section 28050:Nano/micro-systems-related
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| Research Institution | Tohoku University |
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Principal Investigator |
LE VANMINH 東北大学, 未来科学技術共同研究センター, 助教 (60765098)
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| Project Period (FY) |
2020-04-01 – 2022-03-31
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| Project Status |
Completed (Fiscal Year 2021)
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| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2021: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2020: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Keywords | Micro-energy harvesters / piezoelectric thin film / piezoelectric device / aluminum nitride / nitride piezoelectricity / MEMS / Power MEMS / doped AlN / Piezoelectric film / doped aluminum nitride / energy harvester / Energy harvester / piezoelectric thin films / lead-free piezoelectric / Nitride piezoelectrics / Piezo MEMS / Piezoelectric devices / Internet of Things / Energy harvesting / Piezoelectric thin films |
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| Outline of Research at the Start |
This research aims to integrate novel high-power-figure-of-merit piezoelectric nitride films and nonlinearity-operating architecture to create ultra-high performance and environment-friendly micro-energy harvesters. The films compose of AlN and scandium-free dopants will be developed to enhance the efficiency of direct mechanical-to-electrical transduction. Also, the nonlinear devices will be realized with the wide bandwidth for an improvement in the overall performance. The developed micro-harvesters will foster the realization of self-powered micro/nano-systems for the Internet of Things.
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| Outline of Final Research Achievements |
This research aims to integrate novel high-power-figure-of-merit (FoM) lead-free AlN-based piezoelectric films and nonlinear-operating architecture to create ultra-high performance and environment-friendly micro-energy harvesters. The project’s results can be summarized: (1) Non-rare-earth TaMg-doped AlN thin films: By doping Ta and (Ta, Mg) into AlN wurtzite unit cell, the doped AlN films possessed higher FoM compared with the pure AlN; (2) Microfabrication of the developed AlN-based piezoelectric thin films for making the micro-devices; (3) High-performance (Ta, Mg) doped AlN energy harvesters with ultra-wide bandwidth operation were successfully developed with the doubly clamped doped-AlN/Si structures.
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| Academic Significance and Societal Importance of the Research Achievements |
I proposed and successfully demonstrated novel high-performance micro-energy harvesters exploiting codoped AlN films and nonlinear device structure. The high-power density and ultra-wide bandwidth EHs will open a new door for compact self-powered wireless sensor nodes toward the Internet of Things
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