| Budget Amount *help |
¥25,740,000 (Direct Cost: ¥19,800,000、Indirect Cost: ¥5,940,000)
Fiscal Year 2021: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2020: ¥6,760,000 (Direct Cost: ¥5,200,000、Indirect Cost: ¥1,560,000)
Fiscal Year 2019: ¥6,760,000 (Direct Cost: ¥5,200,000、Indirect Cost: ¥1,560,000)
Fiscal Year 2018: ¥6,760,000 (Direct Cost: ¥5,200,000、Indirect Cost: ¥1,560,000)
Fiscal Year 2017: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
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| Outline of Final Research Achievements |
Current enhancement due to the electron-electron scattering is observed in nanometer-scaled silicon transistors with three current terminals. This demonstrates that it is possible to enhance the input current by electron-electron scattering taking place within the time period of pico-seconds, avoiding unwanted electro-phonon scattering in the channel and/or at the drain terminal. We also showed that the metal insulator transition can be gate-controlled in silicon-on-insulator MOS two-dimensional electron gases. In addition, we observed phonon emission and the zero-bias anomaly caused by the Coulomb gap in silicon Esaki tunnel diodes.
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