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Development of Key Technologies for the Multi-probe Spectroscopy based on Near-field Optics

Research Project

Project/Area Number 21226001
Research Category

Grant-in-Aid for Scientific Research (S)

Allocation TypeSingle-year Grants
Research Field Applied materials science/Crystal engineering
Research InstitutionKyoto University

Principal Investigator

KAWAKAMI Yoichi  京都大学, 工学(系)研究科(研究院), 教授 (30214604)

Co-Investigator(Kenkyū-buntansha) FUNATO Mitsuru  京都大学, 大学院工学研究科, 准教授 (70240827)
岡本 晃一  京都大学, 工学(系)研究科(研究院), 特命准教授 (50467453)
Co-Investigator(Renkei-kenkyūsha) OKAMOTO Koichi  九州大学, 先導物質化学研究所, 准教授 (50467453)
Project Period (FY) 2009-05-11 – 2014-03-31
Project Status Completed (Fiscal Year 2013)
Budget Amount *help
¥161,070,000 (Direct Cost: ¥123,900,000、Indirect Cost: ¥37,170,000)
Fiscal Year 2013: ¥22,880,000 (Direct Cost: ¥17,600,000、Indirect Cost: ¥5,280,000)
Fiscal Year 2012: ¥31,200,000 (Direct Cost: ¥24,000,000、Indirect Cost: ¥7,200,000)
Fiscal Year 2011: ¥31,200,000 (Direct Cost: ¥24,000,000、Indirect Cost: ¥7,200,000)
Fiscal Year 2010: ¥33,280,000 (Direct Cost: ¥25,600,000、Indirect Cost: ¥7,680,000)
Fiscal Year 2009: ¥42,510,000 (Direct Cost: ¥32,700,000、Indirect Cost: ¥9,810,000)
Keywords近接場光学 / マルチプローブ分光 / 半導体ナノ構造 / 発光機構解明 / 新規顕微分光応用 / マルチプローブ技術 / 光物性 / 半導体 / ナノ構造 / プラズモニクス / 光計測 / 走査プローブ顕微鏡
Research Abstract

We have succeeded in the development of key technologies of the multi-probe spectroscopy based on near-field optics, where local area of a sample was photo-excited through an optical fiber probe having a small aperture, and the optical signal from a space a few hundreds nm apart was detected through another fiber probe. This spectroscopy enables us to visualize the recombination dynamics of elementary excitations such as carriers, excitons and plasmons in photonic materials like semiconductor nano-structures, and leads to a new tool for fundamental optical characterization.

Assessment Rating
Verification Result (Rating)

A-

Report

(7 results)
  • 2014 Research Progress Assessment (Verification Result) ( PDF )
  • 2013 Annual Research Report   Final Research Report ( PDF )
  • 2012 Annual Research Report
  • 2011 Annual Research Report
  • 2010 Annual Research Report
  • 2009 Annual Research Report
  • Research Products

    (262 results)

All 2013 2012 2011 2010 2009 Other

All Journal Article (55 results) (of which Peer Reviewed: 53 results) Presentation (190 results) (of which Invited: 28 results) Book (4 results) Remarks (6 results) Patent(Industrial Property Rights) (7 results) (of which Overseas: 6 results)

  • [Journal Article] Huge electron-hole exchange interaction in aluminum nitride2013

    • Author(s)
      R. Ishii, M. Funato and Y. Kawakami
    • Journal Title

      Physical Review B

      Volume: 87 Issue: 16

    • DOI

      10.1103/physrevb.87.161204

    • NAID

      120005244911

    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Remarkably suppressed luminescence inhomogeneity in a (0001) InGaN green laser structure2013

    • Author(s)
      M. Funato, Y. S. Kim, T. Hira, A. Kaneta, Y. Kawakami, T. Miyoshi and S. Nagahama
    • Journal Title

      Applied Physics Express

      Volume: 6 Issue: 11 Pages: 111002-111002

    • DOI

      10.7567/apex.6.111002

    • NAID

      210000136844

    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Two-photon absorption induced anti-stokes emission in single InGaN/GaN quantum-dot-like objects2013

    • Author(s)
      R. Bardoux, M. Funato, A. Kaneta, Y. Kawakami, A. Kikuchi and K. Kishino
    • Journal Title

      Physica Status Solidi-Rapid Research Letters

      Volume: 7 Issue: 5 Pages: 344-347

    • DOI

      10.1002/pssr.201307067

    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Grain size dependence of surface plasmon enhanced photoluminescence2013

    • Author(s)
      X. Xu, M. Funato, Y. Kawakami, K. Okamoto and K. Tamada
    • Journal Title

      Optics Express

      Volume: 21 Pages: 3145-3151

    • NAID

      120005540812

    • URL

      http://www.opticsinfobase.org/oe/search2.cfm?reissue=J&journalList=4&fullrecord=Grain+size+dependence+of+surface+plasmon+enhanced+photoluminescence&basicsearch=Go

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Heteroepitaxy between wurtzite and corundum materials2013

    • Author(s)
      Y. Hayashi, R. G. Banal, M. Funato and Y. Kawakami
    • Journal Title

      Journal of Applied Physics

      Volume: 113 Issue: 18

    • DOI

      10.1063/1.4804328

    • NAID

      120005439697

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Crack-free thick AlN films obtained by NH3 nitridation of sapphire substrates2013

    • Author(s)
      R. G. Banal, Y. Akashi, K. Matsuda, Y. Hayashi, M. Funato and Y. Kawakami
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 52 Issue: 8S Pages: 08JB21-08JB21

    • DOI

      10.7567/jjap.52.08jb21

    • NAID

      210000142615

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Complete set of deformation potentials for AlN determined by reflectance spectroscopy under uniaxial stress2013

    • Author(s)
      R. Ishii, A. Kaneta, M. Funato and Y. Kawakami
    • Journal Title

      Physical Review B

      Volume: 87 Issue: 23

    • DOI

      10.1103/physrevb.87.235201

    • NAID

      120005296104

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC(0001)2013

    • Author(s)
      M. Kaneko, H. Okumura, R. Ishii, M. Funato, Y. Kawakami, T. Kimoto and J. Suda
    • Journal Title

      Applied Physics Express

      Volume: 6 Issue: 6 Pages: 62604-62604

    • DOI

      10.7567/apex.6.062604

    • NAID

      10031181971

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] In plane manipulation of a dielectric nanobeam with gradient optical forces2013

    • Author(s)
      P. A. Favuzzi, R. Bardoux, T. Asano, Y. Kawakami and S. Noda
    • Journal Title

      Optics Express

      Volume: 21 Issue: 24 Pages: 29129-29139

    • DOI

      10.1364/oe.21.029129

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Optical gain spectra of a (0001) InGaN green laser diode2013

    • Author(s)
      M. Funato, Y. S. Kim, Y. Ochi, A. Kaneta, Y. Kawakami, T. Miyoshi and S. Nagahama
    • Journal Title

      Applied Physics Express

      Volume: 6 Issue: 12 Pages: 122704-122704

    • DOI

      10.7567/apex.6.122704

    • NAID

      210000136903

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Complex strain distribution in individual facetted InGaN/GaN nano-columnar heterostructures2013

    • Author(s)
      R. Bardoux, M. Funato, A. Kaneta, Y. Kawakami, A. Kikuchi and K. Kishino
    • Journal Title

      Optical Materials Express

      Volume: 3 Pages: 47-53

    • NAID

      120005540813

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Strong optical polarization in nonpolar (1-100) Al_xGa_<1-x>N/AlN quantum wells2013

    • Author(s)
      M. Funato, K. Matsuda, R. G. Banal, R. Ishii and Y. Kawakami
    • Journal Title

      Physical Review B

      Volume: 87 Issue: 4

    • DOI

      10.1103/physrevb.87.041306

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Interference of the surface plasmon polaritons with an Ag waveguide probed by dual-probe scanning near-field optical microscopy2012

    • Author(s)
      R. Fujimoto, A. Kaneta, K. Okamoto, M. Funato and Y. Kawakami
    • Journal Title

      Applied Surface Science

      Volume: 258 Issue: 19 Pages: 7372-7376

    • DOI

      10.1016/j.apsusc.2012.04.034

    • Related Report
      2013 Final Research Report 2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Instrumentation for dual-probe scanning near-field optical microscopy2012

    • Author(s)
      A. Kaneta, R. Fujimoto, T. Hashimoto, K. Nishimura, M. Funato and Y. Kawakami
    • Journal Title

      Review of scientific instruments

      Volume: 83 Issue: 8 Pages: 1-11

    • DOI

      10.1063/1.4737883

    • NAID

      120005439698

    • Related Report
      2013 Final Research Report 2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Nanoscopic photoluminescence properties of a green-emitting InGaN single quantum well on a {20-21} GaN substrate probed by scanning near-field optical microscopy2012

    • Author(s)
      A. Kaneta, Y. S. Kim, M. Funato, Y. Kawakami, Y. Enya, T. Kyono, M. Ueno and T. Nakamura
    • Journal Title

      Applied Physics Express

      Volume: 5 Issue: 10 Pages: 1-3

    • DOI

      10.1143/apex.5.102104

    • NAID

      10031117546

    • Related Report
      2013 Final Research Report 2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Semipolar {n-n01} InGaN/GaN ridge quantum wells (n=1-3) fabricated by a regrowth technique2012

    • Author(s)
      M. Funato, T. Kotani, T. Kondou and Y. Kawakami
    • Journal Title

      Applied Physics Letters

      Volume: 100 Issue: 16

    • DOI

      10.1063/1.4704779

    • NAID

      120007145038

    • Related Report
      2013 Final Research Report 2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Homoepitaxy and photoluminescence properties of (0001) AIN2012

    • Author(s)
      M. Funato, K. Matsuda, R. G. Banal, R. Ishii, Y. Kawakami
    • Journal Title

      Applied Physics Express

      Volume: 5 Issue: 8 Pages: 082001-082001

    • DOI

      10.1143/apex.5.082001

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Anisotropic lattice relaxation in non-c-plane InGaN/GaN multiple quantum wells2012

    • Author(s)
      J. Nishinaka, M. Funato and Y. Kawakami
    • Journal Title

      Journal of Applied Physics

      Volume: 112 Issue: 3

    • DOI

      10.1063/1.4739723

    • NAID

      120005439699

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates2012

    • Author(s)
      Y. S. Kim, A. Kaneta, M. Funato and Y. Kawakami
    • Journal Title

      電子情報通信学会技術研究報告

      Volume: 112 Pages: 71-74

    • Related Report
      2012 Annual Research Report
  • [Journal Article] Unambiguous relationship between photoluminescence energy and its pressure evolution in InGaN/GaN quantum wells2012

    • Author(s)
      T. Suski, G. Staszczak, S. P. Lepkowski, P. Perlin , R. Czernecki, I. Grzegory, M. Funato and Y. Kawakami
    • Journal Title

      Physica Status Solidi {B}

      Volume: 249 Pages: 476-479

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Lateral charge carrier diffusion in InGaN quantum wells2012

    • Author(s)
      J. Danhof, H. M. Solowan, U. T. Schwarz, A. Kaneta, Y. Kawakami, D. Schiavon, T. Meyer and M. Peter
    • Journal Title

      Physica Status Solidi {B}

      Volume: 249 Pages: 480-484

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Fabrication of photo-induced microstructure embedded inside ZnO crystal2012

    • Author(s)
      Y. Ishikawa, Y. Shimotsuma, A. Kaneta, M. Sakakura, M. Nishi, K. Miura, K. Hirao and Y. Kawakami
    • Journal Title

      Proceedings of SPIE

      Volume: 8243 Pages: 82430N-82430N

    • DOI

      10.1117/12.908190

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Time-of-flight measurements of charge carrier diffusion in In_xGa_<1-x>N/GaN quantum wells2011

    • Author(s)
      J. Danhof, U. T. Schwarz, A. Kaneta and Y. Kawakami
    • Journal Title

      Physical Review B

      Volume: 84 Issue: 3 Pages: 1-5

    • DOI

      10.1103/physrevb.84.035324

    • Related Report
      2013 Final Research Report 2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Micromirror arrays to assess luminescent nano-objects2011

    • Author(s)
      Y. Kawakami, A. Kanai, A. Kaneta, M. Funato, A. Kikuchi and K. Kishino
    • Journal Title

      Review of Scientific Instruments

      Volume: 82 Issue: 5

    • DOI

      10.1063/1.3589855

    • NAID

      120004873774

    • Related Report
      2013 Final Research Report 2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Lateral charge carrier diffusion in InGaN quantum wells2011

    • Author(s)
      J.Danhof, H.M.Solowan, U.T.Schwarz, A.Kaneta, Y.Kawakami, D.Schiavon, T.Meyer, M.Peter
    • Journal Title

      Physica Status Solidi B

      Volume: 249 Issue: 3 Pages: 480-484

    • DOI

      10.1002/pssb.201100476

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Real-time near-field evidence of optical blinking in the photoluminescence of InGaN by scanning near-field ontical microscope2011

    • Author(s)
      K.Oikawa, C.Feldmeier, U.T.Schwarz, Y.Kawakami, R Micheletto
    • Journal Title

      Optical Materials Express

      Volume: 1 Pages: 158-163

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Single mode emission and non-stochastic laser system based on disordered point-sized structures : toward a tuneahle random laser2011

    • Author(s)
      R.Bardoux, A.Kaneta, M.Funato, K.Okamoto, Y.Kawakami, A.Kikuchi, K.Kishino
    • Journal Title

      Optics Express

      Volume: 19 Pages: 9262-9268

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Different behavior of semipolar and polar InGaN/GaN quantum wells : Pressure studies of photoluminescence2011

    • Author(s)
      G.Staszczak, T.Suski, A.Khachapuridze, P.Perlin, M.Funato, Y.Kawakami
    • Journal Title

      Physica Status Solidi A

      Volume: 208 Issue: 7 Pages: 1526-1528

    • DOI

      10.1002/pssa.201000975

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] All deformation potentials in GaN determined by reflectance spectroscopy under uniaxial stress : definite breakdown of the quasicubic approximation2010

    • Author(s)
      R. Ishii, A. Kaneta, M. Funato and Y. Kawakami
    • Journal Title

      Physical Review B

      Volume: 81 Issue: 15

    • DOI

      10.1103/physrevb.81.155202

    • NAID

      120002511392

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] 100 mW deep ultraviolet emission from aluminum nitride based quantum wells pumped by an electron beam2010

    • Author(s)
      T. Oto, R. G. Banal, K. Kataoka, M. Funato and Y. Kawakami
    • Journal Title

      Nature Photonics

      Volume: 4 Issue: 11 Pages: 767-771

    • DOI

      10.1038/nphoton.2010.220

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Visualization of the local carrier dynamics in an InGaN quantum well using dual-probe scanning near-field optical microscopy2010

    • Author(s)
      A. Kaneta, T, Hashimoto, K. Nishimura, M. Funato and Y. Kawakami
    • Journal Title

      Applied Physics Express

      Volume: 3 Issue: 10 Pages: 102102-102102

    • DOI

      10.1143/apex.3.102102

    • NAID

      10027441078

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching2010

    • Author(s)
      Y. Kawakami, A. Kaneta, L. Su, Y. Zhu, K. Okamoto, M. Funato, A. Kikuchi and K. Kishino
    • Journal Title

      Journal of Applied Physics

      Volume: 107 Issue: 2

    • DOI

      10.1063/1.3280032

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] All deformation potentials in GaN determined by reflectance spectroscopy under uniaxial stress : definite breakdown of the quasicubic approximation2010

    • Author(s)
      R.Ishii, A.Kaneta, M.Funato, Y.Kawakami
    • Journal Title

      Physical Review B

      Volume: 81

    • NAID

      120002511392

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well2010

    • Author(s)
      V.Ramesh, A.Kikuchi, K.Kishino, M.Funato, Y.Kawakami
    • Journal Title

      Journal of Applied Physics

      Volume: 107

    • NAID

      120003386595

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Strain states in semipolar III-nitride semiconductor quantum wells2010

    • Author(s)
      M.Funato, D.Inoue, M.Ueda, Y.Kawakami, Y.Narukawa, T.Mukai
    • Journal Title

      Journal of Applied Physics

      Volume: 107

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Valence band effective mass of non-c-plane nitride heterostructures2010

    • Author(s)
      K.Kojima, M.Funato, Y.Kawakami, S.Noda
    • Journal Title

      Journal of Applied Physics

      Volume: 107

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] 100mW deep ultraviolet emission from aluminum nitride based quantum wells pumped by an electron beam2010

    • Author(s)
      T.Oto, R.G.Banal, K.Kataoka, M.Funato, Y.Kawakami
    • Journal Title

      Nature Photonics

      Volume: 4 Pages: 767-771

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Strain-induced effects on the electronic band structures in GaN/AlGaN quantum wells : Impact of breakdown of the quasi-cubic approximation in GaN2010

    • Author(s)
      R.Ishii, A.Kaneta, M.Funato, Y.Kawakami
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 49

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Characteristics of high Al-content AlGaN/AlN quantum wells fabricated by modified migration enhanced epitaxy2010

    • Author(s)
      R.G.Banal, M.Funato, Y.Kawakami
    • Journal Title

      Physica Status Solidi (C)

      Volume: 7 Pages: 2111-2114

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Deep ultraviolet emission mechanisms in highly excited Al_<0.79>Ga_<0.21>N/AlN quantum wells2010

    • Author(s)
      T.Oto, R.G.Banal, M.Funato, Y.Kawakami
    • Journal Title

      Physica Status Solidi (C)

      Volume: 7 Pages: 1909-1912

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Experimental and theoretical considerations of polarization field direction in semipolar InGaN/GaN quantum wells2010

    • Author(s)
      M.Funato, M.Ueda, D.Inoue, Y.Kawakamai, Y.Narukawa, T.Mukai
    • Journal Title

      Applied Physics Express

      Volume: 3

    • NAID

      10026495062

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Gain Anisotropy Analysis in Green Semipolar InGaN Quantum Wells with Inhomogeneous Broadening2010

    • Author(s)
      K.Kojima, AA.Yamaguchi, M.Funato, Y.Kawakami, S.Noda
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 49

    • NAID

      40017253764

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Visualization of the local carrier dynamics in an InGaN quantum well using dual-probe scanning near-field optical microscopy2010

    • Author(s)
      A.Kaneta, T, Hashimoto, K.Nishimura, M.Funato, Y.Kawakami
    • Journal Title

      Applied Physics Express

      Volume: 3

    • NAID

      10027441078

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching2010

    • Author(s)
      Y.Kawakami, A.Kaneta, L.Su, Y.Zhu, K.Okamoto, M.Funato, A.Kikuchi, K.Kishino
    • Journal Title

      Journal of Applied Physics 107

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar{20-21}GaN Substrates2010

    • Author(s)
      M.Funato, A.Kaneta, Y.Kawakami, Y.Enya, K.Nishizuka, M.Ueno, T.Nakamura
    • Journal Title

      Applied Physics Express 3

    • NAID

      10027013275

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Positive binding energy of a biexciton confined in a localization center formed in a single InxGa1-xN/GaN quantum disk2009

    • Author(s)
      R. Bardoux, A. Kaneta, M. Funato, Y. Kawakami, A. Kikuchi and K. Kishino
    • Journal Title

      Physical Review B

      Volume: 79 Issue: 15

    • DOI

      10.1103/physrevb.79.155307

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] High-Efficiency InGaN/GaN Light Emitters Based on Nanophotonics and Plasmonics2009

    • Author(s)
      K. Okamoto and Y. Kawakami
    • Journal Title

      IEEE Journal of Selected Topics in Quantum Electronics

      Volume: 15 Issue: 4 Pages: 1199-1209

    • DOI

      10.1109/jstqe.2009.2021530

    • NAID

      120002086026

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Near-field evidence of local polarized emission centers in InGaN/GaN materials2009

    • Author(s)
      R. Micheletto, M, Allegrini and Y. Kawakami
    • Journal Title

      Applied Physics Letters

      Volume: 95 Issue: 21

    • DOI

      10.1063/1.3265732

    • NAID

      120002086118

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Positive binding energy of a biexciton confined in a localization center formed in a single In_xGa_(1-x)N/GaN quantum disk2009

    • Author(s)
      R.Bardoux, A.Kaneta, M.Funato, Y.Kawakami, A.Kikuchi, K.Kishino
    • Journal Title

      Physical Review B 79

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Transient memory effect in the photoluminescence of InGaN single quantum wells2009

    • Author(s)
      C.Feldmeier, M.Abiko, U.T.Schwarz, Y.Kawakami, R.Micheletto
    • Journal Title

      Optics Express 17

      Pages: 22855-22860

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] High-Efficiency InGaN/GaN Light Emitters Based on Nanophotonics and Plasmonics2009

    • Author(s)
      K.Okamoto, Y.Kawakami
    • Journal Title

      IEEE Journal of Selected Topics in Quantum Electronics 15

      Pages: 1199-1209

    • NAID

      120002086026

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Growth characteristics of AlN on sapphire substrates by modified migration-enhanced epitaxy2009

    • Author(s)
      R.G.Banal, M.Funato, Y.Kawakami
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2834-2836

    • NAID

      120002317421

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Optical anisotropy control of non-c-plane InGaN quantum wells2009

    • Author(s)
      K.Kojima, H.Kamon, M.Funato, Y.Kawakami
    • Journal Title

      Japanese Journal of Applied Physics 48

    • NAID

      40016704620

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Near-field evidence of local polarized emission centers in InGaN/GaN materials2009

    • Author(s)
      R.Micheletto, M, Allegrini, Y.Kawakami
    • Journal Title

      Applied Physics Letters 95

    • NAID

      120002086118

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article]2009

    • Author(s)
      船戸充, 川上養一
    • Journal Title

      窒化物基板および格子整合基板の成長とデバイス特性(シーエムシー出版)

      Pages: 104-118

    • Related Report
      2009 Annual Research Report
  • [Presentation] Visualization of recombination dynamics in nitride-based semiconductors2013

    • Author(s)
      Y. Kawakami, M. Funato and A. Kaneta
    • Organizer
      10th Intern. Conf. on Nitride Semiconductors
    • Place of Presentation
      Washington DC, USA
    • Year and Date
      2013-08-27
    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Invited
  • [Presentation] Semipolar faceting for InGaN-based polychromatic LEDs2013

    • Author(s)
      M. Funato and Y. Kawakami
    • Organizer
      CLEO : 2013
    • Place of Presentation
      San Jose, USA
    • Year and Date
      2013-06-13
    • Related Report
      2013 Final Research Report
    • Invited
  • [Presentation] High quality AlGaN-based quantum wells for deep-ultraviolet emitters2012

    • Author(s)
      M. Funato
    • Organizer
      16th Intern. Conf. on Metal Organic Vapor Phase Epitaxy
    • Place of Presentation
      Busan, Korea
    • Year and Date
      2012-05-22
    • Related Report
      2013 Final Research Report
    • Invited
  • [Presentation] SNOM characterization on inhomogenity and defects in III-N alloy semiconductors2012

    • Author(s)
      Y. Kawakami
    • Organizer
      Intern. Workshop on SMART Energy Harvesting and Saving with III-Nitride Semiconductors
    • Place of Presentation
      Chiba, Japan
    • Year and Date
      2012-05-10
    • Related Report
      2013 Final Research Report
    • Invited
  • [Presentation] Recombination dynamics in InGaN-based nanostructures by scanning near-field optical microscopy2012

    • Author(s)
      Y. Kawakami
    • Organizer
      DYCE-ASIA Workshop
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2012-04-23
    • Related Report
      2013 Final Research Report 2012 Annual Research Report
    • Invited
  • [Presentation] 半極性(11-22)GaN基板上に成長したInGaN/GaN多重量子井戸の臨界膜厚2012

    • Author(s)
      西中淳一, 船戸充, 川上養一
    • Organizer
      第59回応用物理学会関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス早稲田中・高等学校興風館
    • Year and Date
      2012-03-18
    • Related Report
      2011 Annual Research Report
  • [Presentation] 近接場分光による局在・幅射・非幅射再結合ダイナミクスの評価2012

    • Author(s)
      川上養一, 船戸充, 金田昭男
    • Organizer
      第59回応用物理学会関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス早稲田中・高等学校興風館(招待講演)
    • Year and Date
      2012-03-15
    • Related Report
      2011 Annual Research Report
  • [Presentation] Recombination Dynamics in Nitride Semiconductors by Scanning Near-field Optical Microscopy2012

    • Author(s)
      Y.Kawakami, A.Kaneta, M.Funato
    • Organizer
      5th GCOE Intern.Symp.on Photonics and Electronics Science and Engineering
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2012-03-08
    • Related Report
      2011 Annual Research Report
  • [Presentation] 窒化物半導体による発光デバイスの最近の展開2011

    • Author(s)
      船戸充, 川上養一
    • Organizer
      平成23年度応用物理学会関西支部シンポジウム「最先端の光研究とその将来」~次世代の光源・材料・デバイス開発の最新動向~
    • Place of Presentation
      島津製作所関西支社マルチホール(招待講演)
    • Year and Date
      2011-11-18
    • Related Report
      2011 Annual Research Report
  • [Presentation] Visualization of the local carrier dynamics in InGaN SQW using dual probe scanning near field optical microscope2011

    • Author(s)
      Y. Kawakami
    • Organizer
      The Intern. Symp. on Advanced Nanomaterials and Nanosystems Joint with 4th Intern. Photonics and OptoElectronics Meetings
    • Place of Presentation
      Wuhan, China
    • Year and Date
      2011-11-02
    • Related Report
      2013 Final Research Report
    • Invited
  • [Presentation] Visualization of the local carrier dynamics in InGaN SQW using dual probe scanning near field optical microscope2011

    • Author(s)
      Y.Kawakami
    • Organizer
      The Intern.Symp.on Advanced Nanomaterials and Nanosystems Joint with 4th Intern.Photonics and OptoElectronics Meetings
    • Place of Presentation
      Wuhan, China(Invited)
    • Year and Date
      2011-11-02
    • Related Report
      2011 Annual Research Report
  • [Presentation] 近接場光学顕微鏡による半導体結晶の再結合ダイナミクス~窒化物半導体混晶の不均一性と発光・非発光機構~2011

    • Author(s)
      川上養一
    • Organizer
      応用物理学会結晶工学分科会弟16回結晶工学セミナー
    • Place of Presentation
      学習院創立百周年記念会館(招待講演)
    • Year and Date
      2011-10-14
    • Related Report
      2011 Annual Research Report
  • [Presentation] Visualization of the local carrier dynamics in InGaN SQW using dual probe SNOM2011

    • Author(s)
      Y.Kawakami
    • Organizer
      4th JST-DFG German-Japanese Nanophotonics Joint Research Proiect Meeting
    • Place of Presentation
      Kyoto, Japan(Invited)
    • Year and Date
      2011-09-26
    • Related Report
      2011 Annual Research Report
  • [Presentation] 近接場顕微分光測定によるInGaN量子井戸中のキャリア拡散が効率ドループ現象へ与える影響2011

    • Author(s)
      金田昭男, 橋谷亨, 船戸充, 川上養
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学
    • Year and Date
      2011-09-01
    • Related Report
      2011 Annual Research Report
  • [Presentation] Local carrier dynamics in InGaN quantum wells studied by scanning near-field optical microscopy2011

    • Author(s)
      A. Kaneta, M. Funato and Y. Kawakami
    • Organizer
      2011 SPIE Optics+Photonics
    • Place of Presentation
      California, USA
    • Year and Date
      2011-08-25
    • Related Report
      2013 Final Research Report
    • Invited
  • [Presentation] Local carrier dynamics in InGaN quantum wells studied by scanning near-field optical microscopy2011

    • Author(s)
      A.Kaneta, M.Funato, Y.Kawakami
    • Organizer
      2011 Optics+Photonics
    • Place of Presentation
      California, USA(Invited)
    • Year and Date
      2011-08-25
    • Related Report
      2011 Annual Research Report
  • [Presentation] Efficient green emission from InGaN quantum wells coherently grown on semipolar (11-22) GaN subatrates2011

    • Author(s)
      J.Nishinaka, M.Funato, Y.Kawakami
    • Organizer
      9th Intern.Conf.on Nitride Semiconductors
    • Place of Presentation
      Glasgow, UK
    • Year and Date
      2011-07-12
    • Related Report
      2011 Annual Research Report
  • [Presentation] Universal behavior of photolumineseence in polar and semipolar InGaN quantum wells revealed by hydrostatic nressure studies2011

    • Author(s)
      T.Suski, G.Staszczak, R.Czernecki, G.Targowski, A.Khachapuridze, P.Perlin, M.Funato, Y.Kawakami
    • Organizer
      9th Intern.Conf.on Nitride Semiconductors
    • Place of Presentation
      Glasgow, UK(Invited)
    • Year and Date
      2011-07-12
    • Related Report
      2011 Annual Research Report
  • [Presentation] Impact of internal quantum efficiency on the droop phenomena studied by scanning near-field optical microscopy in InGaN single quantum wells2011

    • Author(s)
      A.Kaneta, A.Hashiya, M.Funato, Y.Kawakami
    • Organizer
      9th Intern.Conf.on Nitride Semiconductors
    • Place of Presentation
      Glasgow, UK
    • Year and Date
      2011-07-11
    • Related Report
      2011 Annual Research Report
  • [Presentation] InGaN/GaN quantum disks and random lasing : toward a quantum dot laser system based on disordered media2011

    • Author(s)
      R.Bardoux, A.Kaneta, M.Funato, Y.Kawakami, A.Kikuchi, K.Kishino
    • Organizer
      E-MRS
    • Place of Presentation
      Nice, France
    • Year and Date
      2011-05-11
    • Related Report
      2011 Annual Research Report
  • [Presentation] (11-22)GaN基板上への高品質InGaN量子井戸構造の成長2011

    • Author(s)
      西中淳一, 船戸充, 川上養一
    • Organizer
      春季第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-27
    • Related Report
      2010 Annual Research Report
  • [Presentation] 電子線励起法によるAlGaN/AlN量子井戸からの高出力・高効率深紫外発光2011

    • Author(s)
      大音隆男, R.G.Banal, 片岡研, 船戸充, 川上養一
    • Organizer
      春季第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(Invited 講演奨励賞受賞記念講演)
    • Year and Date
      2011-03-26
    • Related Report
      2010 Annual Research Report
  • [Presentation] Extremely high internal quantum efficiency from AlGaN/AlN quantum wells2011

    • Author(s)
      R.G.Banal, 船戸充, 川上養一
    • Organizer
      春季第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-26
    • Related Report
      2010 Annual Research Report
  • [Presentation] 時間分解発光測定による高Al組成AlGaN/AlN量子井戸におけるMott密度の井戸幅依存性の評価2011

    • Author(s)
      岩田佳也, 大音隆男, 金田昭男, R.G.Banal, 船戸充, 川上養一
    • Organizer
      春季第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-26
    • Related Report
      2010 Annual Research Report
  • [Presentation] Visualization of the local carrier dynamics in InGaN SQW using dual-probe scanning near-field optical microscopy2011

    • Author(s)
      Y.Kawakami, A.Kaneta, T.Hashimoto, K.Nishimura, M.Funato
    • Organizer
      2011 German-Japanese-Spanish Joint Workshop on Frontier Photonic and Electronic Materials and Device
    • Place of Presentation
      Granada, Spain(Invited)
    • Year and Date
      2011-03-18
    • Related Report
      2010 Annual Research Report
  • [Presentation] 窒化物半導体発光素子の高効率化が拓くグリーンイノベーション2011

    • Author(s)
      船戸充, 川上養一
    • Organizer
      レーザー学会学術講演会第31回年次大会
    • Place of Presentation
      電気通信大学(Invited)
    • Year and Date
      2011-01-10
    • Related Report
      2010 Annual Research Report
  • [Presentation] 空間時間分解PLによるInGaN/GaN単一量子井戸のキャリア拡散ダイナミクスの評価~SNOMによるEfficiency droop機構の解明~2010

    • Author(s)
      橋谷享, 金田昭男, 船戸充, 川上養一
    • Organizer
      電子情報通信学会
    • Place of Presentation
      大阪大学中ノ島センター
    • Year and Date
      2010-11-11
    • Related Report
      2010 Annual Research Report
  • [Presentation] 電子線励起したAlGaN/AlN量子井戸からの100mW深紫外発光2010

    • Author(s)
      大音隆男, R.G.Banal, 片岡研, 船戸充, 川上養一
    • Organizer
      電子情報通信学会
    • Place of Presentation
      大阪大学中ノ島センター
    • Year and Date
      2010-11-11
    • Related Report
      2010 Annual Research Report
  • [Presentation] Inhomogeneous broadening in Al-rich AlGaN/AlN single quantum wells2010

    • Author(s)
      R.G.Banal, M.Funato, Y.Kawakami
    • Organizer
      28th samahang Pisika ng Pilipinas Physics Congress
    • Place of Presentation
      Antipolo City, Rizal, Philippines
    • Year and Date
      2010-10-26
    • Related Report
      2010 Annual Research Report
  • [Presentation] Inhomogeneous Broadening in Al-rich AlGaN/AlN Single Quantum Wells2010

    • Author(s)
      R.G.Banal, M.Funato, Y.Kawakami
    • Organizer
      Intern. workshop on Nitride Semiconductors
    • Place of Presentation
      Tampa, Florida, USA
    • Year and Date
      2010-09-22
    • Related Report
      2010 Annual Research Report
  • [Presentation] Influence of Inhomogeneous Broadening for Gain Polarization Switching in Green Semipolar InGaN Quantum Wells2010

    • Author(s)
      K.Kojima, A.Yamaguchi, M.Funato, Y.Kawakami, S.Noda
    • Organizer
      Intern.workshop on Nitride Semiconductors
    • Place of Presentation
      Tampa, Florida, USA
    • Year and Date
      2010-09-22
    • Related Report
      2010 Annual Research Report
  • [Presentation] Time-resolved photoluminescence of Al-rich AlGaN/AlN multiple quantum wells under selective excitation2010

    • Author(s)
      Y.Iwata, T.Oto, A.Kaneta, R.G.Banal, M.funato, Y.Kawakami
    • Organizer
      Intern.workshop on Nitride Semiconductors
    • Place of Presentation
      Tampa, Florida, USA
    • Year and Date
      2010-09-22
    • Related Report
      2010 Annual Research Report
  • [Presentation] Different behavior of semipolar and polar InGaN/GaN quantum wells with respect to pressure dependence of luminescence energy2010

    • Author(s)
      G.Staszczak, T.Suski, P.Perlin, M.Funato, Y.Kawakami
    • Organizer
      Intern.workshop on Nitride Semiconductors
    • Place of Presentation
      Tampa, Florida, USA
    • Year and Date
      2010-09-22
    • Related Report
      2010 Annual Research Report
  • [Presentation] Visualization of the local carrier dynamics in InGaN SQW using dual probe scanning near field optical microscope2010

    • Author(s)
      A. Kaneta, T. Hashimoto, K. Nishimura, M. Funato and Y. Kawakami
    • Organizer
      Intern. workshop on Nitride Semiconductors
    • Place of Presentation
      Tampa, Frorida, USA
    • Year and Date
      2010-09-21
    • Related Report
      2013 Final Research Report
    • Invited
  • [Presentation] Visualization of the local carrier dynamics in InGaN SQW using dual probe scanning near field optical microscope2010

    • Author(s)
      A.Kaneta, T.Hashimoto, K.Nishimura, M.funato, Y.Kawakami
    • Organizer
      Intern.workshop on Nitride Semiconductors
    • Place of Presentation
      Tampa, Florida, USA(Invited)
    • Year and Date
      2010-09-21
    • Related Report
      2010 Annual Research Report
  • [Presentation] 表面プラズモンナノ構造の制御による広波長域での発光増強2010

    • Author(s)
      岡本晃一, R.Bardoux, 川上養一
    • Organizer
      秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-16
    • Related Report
      2010 Annual Research Report
  • [Presentation] デュアルプローブSNOMを用いた銀細線におけるプラズモン異方性伝搬の観測2010

    • Author(s)
      藤本亮, 橋本恒明, 金田昭男, 岡本晃一, 船戸充, 川上養一
    • Organizer
      秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-16
    • Related Report
      2010 Annual Research Report
  • [Presentation] 電子線励起法による高Al組成AlGaN/AlN量子井戸からの100mW深紫外発光2010

    • Author(s)
      大音隆男, Ryan Banal, 片岡研, 船戸充, 川上養一
    • Organizer
      秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(講演奨励賞受賞)
    • Year and Date
      2010-09-16
    • Related Report
      2010 Annual Research Report
  • [Presentation] ウルツ鉱構造におけるquasicubic近似の破綻2010

    • Author(s)
      石井良太, 金田昭男, 船戸充, 川上養一
    • Organizer
      秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(Invited 講演奨励賞受賞記念講演)
    • Year and Date
      2010-09-15
    • Related Report
      2010 Annual Research Report
  • [Presentation] Inhomogeneous Broadening in Al-rich AlGaN/AlN Single Quantum Wells2010

    • Author(s)
      R.G.Banal, M.Funato, Y.Kawakami
    • Organizer
      秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Related Report
      2010 Annual Research Report
  • [Presentation] 無極性面AlGaN/AlN量子井戸の光学特性に関する理論検討2010

    • Author(s)
      小島一信, 山口敦史, 船戸充, 川上養一, 野田進
    • Organizer
      秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Related Report
      2010 Annual Research Report
  • [Presentation] InGaN量子井戸のキャリア拡散ダイナミクスの空間時間分解PL評価 -近接場光学顕微鏡によるEfficiency droop機構の解明-2010

    • Author(s)
      橋谷享, 金田昭男, 船戸充, 川上養一
    • Organizer
      秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Related Report
      2010 Annual Research Report
  • [Presentation] Breakdown of the quasicubic approximation in wurtzite crystals2010

    • Author(s)
      R.Ishii, A.Kaneta, M.funato, Y.Kawakami
    • Organizer
      29th Electronic Materials Symposium
    • Place of Presentation
      Laforet Shuzenji, Izu, Japan
    • Year and Date
      2010-07-15
    • Related Report
      2010 Annual Research Report
  • [Presentation] Impact of breakdown of the quasi-cubic approximation in GaN on the optical polarization properties of nonpolar and semipolar GaN/AlGaN quantum wells2010

    • Author(s)
      R.Ishii, A.Kaneta, M.Funato, Y.Kawakami
    • Organizer
      The 37th Intern.Symp.on Compound Semiconductors
    • Place of Presentation
      Takamatsu, Kagawa, Japan(Invited ISCS Student Award受賞)
    • Year and Date
      2010-06-01
    • Related Report
      2010 Annual Research Report
  • [Presentation] Applications of plasmonics toward high-efficiency LEDs and solar cells2010

    • Author(s)
      K. Okamoto and Y. Kawakami
    • Organizer
      The Intern. Symp. on Advanced Nanomaterials and Nanosystems 2010
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2010-05-21
    • Related Report
      2013 Final Research Report
    • Invited
  • [Presentation] Applications of plasmonics toward high-efficiency LEDs and solar cells2010

    • Author(s)
      K.Okamoto, Y.Kawakami
    • Organizer
      The Intern.Symp.on Advanced Nanomaterials and Nanosystems 2010
    • Place of Presentation
      Kyoto, Japan(Invited)
    • Year and Date
      2010-05-21
    • Related Report
      2010 Annual Research Report
  • [Presentation] Mapping of efficiency droop in InGaN quantum wells studied by scanning near-field optical microscopy2010

    • Author(s)
      Y. Kawakami, A. Hashiya, A. Kaneta and M. Funato
    • Organizer
      The 8th Intern. Symp. on Semiconductor Light Emitting Devices
    • Place of Presentation
      Beijing, China
    • Year and Date
      2010-05-17
    • Related Report
      2013 Final Research Report
    • Invited
  • [Presentation] Mapping of efficiency droop in InGaN quantum wells studied by scanning near-field optical microscopy2010

    • Author(s)
      Y.Kawakami, A.Hashiya, A.Kaneta, M.Funato
    • Organizer
      The 8th Intern.Symp.on Semiconductor Light Emitting Devices
    • Place of Presentation
      Beijing, China(Invited)
    • Year and Date
      2010-05-17
    • Related Report
      2010 Annual Research Report
  • [Presentation] 強励起した高Al組成AlGaN/AlN量子井戸の深紫外発光メカニズム2010

    • Author(s)
      大音隆男, 岩田佳也, 金田昭男, R.G.Banal, 船戸充, 川上養一
    • Organizer
      第2回窒化物半導体結晶成長講演会「窒化物半導体結晶成長の新しい流れ」
    • Place of Presentation
      三重大学
    • Year and Date
      2010-05-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] 高Al組成AlGaN/AlN量子井戸のMott転移付近のキャリアダイナミクス2010

    • Author(s)
      大音隆男, 岩田佳也, 金田昭男, R.G.Banal, 船戸充, 川上養一
    • Organizer
      日本材料学会半導体エレクトロニクス部門委員会平成22年度第1回研究会
    • Place of Presentation
      大阪大学
    • Year and Date
      2010-05-08
    • Related Report
      2010 Annual Research Report
  • [Presentation] デュアルプローブを用いた近接場光学顕微鏡の開発2010

    • Author(s)
      橋本恒明, 西村活人, 金田昭男, 船戸充, 川上養一
    • Organizer
      第57回応用物理学会関係連合講演会
    • Place of Presentation
      東海大学(神奈川県)
    • Year and Date
      2010-03-18
    • Related Report
      2009 Annual Research Report
  • [Presentation] デュアルプローブ近接場光学顕微鏡を用いたInGaN/GaN SQWのキャリアダイナミクスの可視化2010

    • Author(s)
      橋本恒明, 西村活人, 金田昭男, 船戸充, 川上養一
    • Organizer
      第57回応用物理学会関係連合講演会
    • Place of Presentation
      東海大学(神奈川県)
    • Year and Date
      2010-03-18
    • Related Report
      2009 Annual Research Report
  • [Presentation] GaNにおけるquasi-cubic近似の破綻と新たに予見される無極性面および半極性面GaN/AlGaN量子井戸構造の特異な光学異方性2010

    • Author(s)
      石井良太, 金田昭男, 船戸充, 川上養一
    • Organizer
      第57回応用物理学会関係連合講演会
    • Place of Presentation
      東海大学(神奈川県)
    • Year and Date
      2010-03-18
    • Related Report
      2009 Annual Research Report
  • [Presentation] 非極性面InGaN量子井戸における不均一広がりと偏光の関係2010

    • Author(s)
      小島一信, 山口敦史, 船戸充, 川上養一, 野田進
    • Organizer
      第57回応用物理学会関係連合講演会
    • Place of Presentation
      東海大学(神奈川県)
    • Year and Date
      2010-03-18
    • Related Report
      2009 Annual Research Report
  • [Presentation] Photoluminescence Properties of Al-rich Al1-xGaxN/AlN Single Quantum Wells2010

    • Author(s)
      R.G.Banal, T.Oto, M.Funato, Y.Kawakami
    • Organizer
      JSAP the 57th Spring Meeting
    • Place of Presentation
      Kanagawa, Japan
    • Year and Date
      2010-03-18
    • Related Report
      2009 Annual Research Report
  • [Presentation] 高Al組成AlGaN/AlN量子井戸の選択励起条件下における時間分解フォトルミネッセンス2010

    • Author(s)
      岩田佳也, 大音隆男, 金田昭男, Ryan Bonal, 船戸充, 川上養一
    • Organizer
      第57回応用物理学会関係連合講演会
    • Place of Presentation
      東海大学(神奈川県)
    • Year and Date
      2010-03-17
    • Related Report
      2009 Annual Research Report
  • [Presentation] Al_<0.79>Ga_<0.21>N/AlN量子井戸のフォトルミネッセンスの時間発展とMott転移付近の発光メカニズムの解析2010

    • Author(s)
      大音隆男, 岩田佳也, 金田昭男, Ryan Bonal, 船戸充, 川上養一
    • Organizer
      第57回応用物理学会関係連合講演会
    • Place of Presentation
      東海大学(神奈川県)
    • Year and Date
      2010-03-17
    • Related Report
      2009 Annual Research Report
  • [Presentation] 表面プラズモンを用いた高Al組成AlGaN/AlN量子井戸構造の内部量子効率の向上2010

    • Author(s)
      高田暁彦, 大音隆男, Ryan Bonal, 船戸充, 川上養一
    • Organizer
      第57回応用物理学会関係連合講演会
    • Place of Presentation
      東海大学(神奈川県)
    • Year and Date
      2010-03-17
    • Related Report
      2009 Annual Research Report
  • [Presentation] Approach to the Efficient Light Emitters in Deep-UV with Al-rich AlGaN/AlN Quantum wells2010

    • Author(s)
      Y.Kawakami, M.Funato
    • Organizer
      3rd GCOE International Symposium.
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2010-03-12
    • Related Report
      2009 Annual Research Report
  • [Presentation] Characterisation and maniqulation of the optical properties of single InGaN/GaN quantum disks2010

    • Author(s)
      R.Bardoux, A.Kaneta, M.Funato, Y.Kawakami, A.Kikuchi, K.Kishino
    • Organizer
      3rd GCOE International Symposium
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2010-03-12
    • Related Report
      2009 Annual Research Report
  • [Presentation] Photoluminescence properties of Al-rich AlGaN/AlN SQWs2010

    • Author(s)
      R.G.Banal, M.Funato, Y.Kawakami
    • Organizer
      3rd GCOE International Symposium
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2010-03-12
    • Related Report
      2009 Annual Research Report
  • [Presentation] Weak carrier/exciton localization in InGaN SQW for higher emission efficiency grown on{20-21}GaN substrate2010

    • Author(s)
      Y.S.Kim, A.Kaneta, M.Funato, Y.Kawakami, Y.Enya, K.Nishizuka, M.Ueno, T.Nakamura
    • Organizer
      3rd GCOE International Symposium
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2010-03-12
    • Related Report
      2009 Annual Research Report
  • [Presentation] Growth and optical polarization properties of high-quality AlN and AlGaN/AlN quantum wells2009

    • Author(s)
      R.G.Banal, M.Funato, Y.Kawakami
    • Organizer
      27th Physics Congress, Samahang Pisika ng Pilipinas
    • Place of Presentation
      Tagaytay, Philippine
    • Year and Date
      2009-12-29
    • Related Report
      2009 Annual Research Report
  • [Presentation] Semipolar III-nitride semiconductors for visible light emitters2009

    • Author(s)
      M.Funato, Y.Kawakami
    • Organizer
      27th Physics Congress, Samahang Pisika ng Pilipinas(plenary)
    • Place of Presentation
      Tagaytay, Philippine
    • Year and Date
      2009-12-28
    • Related Report
      2009 Annual Research Report
  • [Presentation] Semipolar (11-22)-oriented InGaN/GaN LEDs and their optical properties2009

    • Author(s)
      Y. Kawakami, M. Ueda, A. Kaneta and M. Funato
    • Organizer
      The 2nd International Conference on White LEDs and Solid State Lighting
    • Place of Presentation
      Taipei, Taiwan
    • Year and Date
      2009-12-16
    • Related Report
      2013 Final Research Report
    • Invited
  • [Presentation] Semipolar(11-22)-oriented InGaN/GaN LEDs and their optical properties2009

    • Author(s)
      Y.Kawakami, M.Ueda, A.Kaneta, M.Funato
    • Organizer
      The 2nd International Conference on White LEDs and Solid State Lighting(Invited)
    • Place of Presentation
      Taipei, Taiwan
    • Year and Date
      2009-12-16
    • Related Report
      2009 Annual Research Report
  • [Presentation] 半極性{11-22}InGaN量子井戸構造の近接場発光マッピング測定2009

    • Author(s)
      金田昭男, 上田雅也, 船戸充, 川上養一
    • Organizer
      電子情報通信学会LQE研究会
    • Place of Presentation
      徳島大学(徳島県)
    • Year and Date
      2009-11-19
    • Related Report
      2009 Annual Research Report
  • [Presentation] 近接場光学顕微鏡によるInGaN/GaN単一量子井戸構造の発光強度飽和マッピング2009

    • Author(s)
      橋谷享, 金田昭男, 船戸充, 川上養一
    • Organizer
      電子情報通信学会LQE研究会
    • Place of Presentation
      徳島大学(徳島県)
    • Year and Date
      2009-11-19
    • Related Report
      2009 Annual Research Report
  • [Presentation] Semipolar(11-22)-oriented InGaN/GaN quantum wells2009

    • Author(s)
      M.Funato, Y.Kawakami
    • Organizer
      Asia Communications and Photonics Conference and Exhibition(Invited)
    • Place of Presentation
      Shanghai, China
    • Year and Date
      2009-11-03
    • Related Report
      2009 Annual Research Report
  • [Presentation] Polarization anisotropy in semipolar/polar nitride semiconductor quantum wells2009

    • Author(s)
      M. Funato and Y. Kawakami
    • Organizer
      8th International Conference on Nitride Semiconductors
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2009-10-23
    • Related Report
      2013 Final Research Report
    • Invited
  • [Presentation] Polarization anisotropy in semipolar/polar nitride semiconductor quantum wells2009

    • Author(s)
      M.Funato, Y.Kawakami
    • Organizer
      8th International Conference on Nitride Semiconductors(Invited)
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2009-10-23
    • Related Report
      2009 Annual Research Report
  • [Presentation] Uniaxial stress effects of excitons on nonpolar and semipolar GaN substrates2009

    • Author(s)
      R.Ishii, M.Funato, Y.Kawakami
    • Organizer
      8th International Conference on Nitride Semiconductors
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2009-10-22
    • Related Report
      2009 Annual Research Report
  • [Presentation] Modifield MEE of high-quality Al-rich Al_xGa_(1-x)N/AlN(0001)quantum wells and its optical polarization anisotropy2009

    • Author(s)
      R.G.Banal, M.Funato, Y.Kawakami
    • Organizer
      8th International Conference on Nitride Semiconductors
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2009-10-21
    • Related Report
      2009 Annual Research Report
  • [Presentation] Valence band effective mass of non-c-plane InGaN/GaN quantum wells2009

    • Author(s)
      K.Kojima, M.Funato, Y.Kawakami, S.Noda
    • Organizer
      8th International Conference on Nitride Semiconductors
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2009-10-19
    • Related Report
      2009 Annual Research Report
  • [Presentation] Luminescence inhomogeneity caused by less-diffusive carriers in semipolar{11-22}InGaN/GaN quantum well active layers2009

    • Author(s)
      M.Ueda, A.Kaneta, M.Funato, Y.Kawakami
    • Organizer
      8th International Conference on Nitride Semiconductors
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2009-10-19
    • Related Report
      2009 Annual Research Report
  • [Presentation] Temperature-dependent picosecond time-resolved cathodoluminescence of(In,Ga)N/GaN single quantum wells2009

    • Author(s)
      L.Balet, P.Corfdir, S.Sonderegger, A.Kaneta, M.Funato, Y.Kawakami, J.D.Gani'ere, B.D.Pl'edran
    • Organizer
      8th International Conference on Nitride Semiconductors
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2009-10-19
    • Related Report
      2009 Annual Research Report
  • [Presentation] Deep ultraviolet emission mechanisms in highly excited Al_(0.79)Ga_(0.21)N/AlN multiple quantum wells2009

    • Author(s)
      T.Oto, R.G.Banal, M.Funato, Y.Kawakami
    • Organizer
      8th International Conference on Nitride Semiconductors
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2009-10-19
    • Related Report
      2009 Annual Research Report
  • [Presentation] 半極性{11-22}InGaN/GaN量子井戸LEDにおける量子閉じ込めシュタルク効果2009

    • Author(s)
      上田雅也, 井上大輔, 金田昭男, 船戸充, 川上養一
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学(富山県)
    • Year and Date
      2009-09-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] 半極性{11-22}InGaN量子井戸構造の高空間分解近接場発光マッピング測定2009

    • Author(s)
      金田昭男, 上田雅也, 船戸充, 川上養一
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学(富山県)
    • Year and Date
      2009-09-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] 一軸性応力印加下における無極性面および半極性面GaN基板の反射測定2009

    • Author(s)
      石井良太, 船戸充, 川上養一
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学(富山県)
    • Year and Date
      2009-09-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] 強励起条件下におけるAl0.79Ga0.21N/AlN量子井戸の深紫外発光機構2009

    • Author(s)
      大音隆男, Ryan Banal, 船戸充, 川上養一
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学(富山県)
    • Year and Date
      2009-09-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] 近接場光学顕微鏡によるInGaN単一量子井戸構造の発光強度飽和マッピング2009

    • Author(s)
      橋谷享, 金田昭男, 船戸充, 川上養一
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学(富山県)
    • Year and Date
      2009-09-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] AlリッチAlGaN系量子井戸の光物性-InGaN系量子井戸と比較して-2009

    • Author(s)
      川上養一, 船戸充
    • Organizer
      第70回応用物理学会学術講演会(招待講演)
    • Place of Presentation
      富山大学(富山県)
    • Year and Date
      2009-09-09
    • Related Report
      2009 Annual Research Report
  • [Presentation] 交互供給法によるAlNおよびAlGaN量子井戸の作製と評価2009

    • Author(s)
      船戸充, 川上養一
    • Organizer
      第70回応用物理学会学術講演会(招待講演)
    • Place of Presentation
      富山大学(富山県)
    • Year and Date
      2009-09-09
    • Related Report
      2009 Annual Research Report
  • [Presentation] 金属ナノ構造およびナノ微粒子を用いたプラズモニック発光増強2009

    • Author(s)
      岡本晃一, 川上養一
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学(富山県)
    • Year and Date
      2009-09-08
    • Related Report
      2009 Annual Research Report
  • [Presentation] InGaN/GaN多重量子井戸のナノ加工による歪制御効果2009

    • Author(s)
      ラメシュバディヴェル, 菊池昭彦, 岸野克巳, 川上養一
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学(富山県)
    • Year and Date
      2009-09-08
    • Related Report
      2009 Annual Research Report
  • [Presentation] Enhancements of emission rates and efficiencies by surface plasmon coupling2009

    • Author(s)
      K.Okamoto, Y.Kawakami
    • Organizer
      The 36th Intern.Symp.on Compound Semiconductors
    • Place of Presentation
      Santa Barbara, USA
    • Year and Date
      2009-09-02
    • Related Report
      2009 Annual Research Report
  • [Presentation] Recombination dynamics in semi-polar {11-22} InGaN/GaN quantum wells2009

    • Author(s)
      Y. Kawakami
    • Organizer
      6th International Workshop on Bulk Nitride Semiconductors
    • Place of Presentation
      Galindia Mazurski Eden, Poland
    • Year and Date
      2009-08-25
    • Related Report
      2013 Final Research Report
    • Invited
  • [Presentation] Recombination dynamics in semi-polar{11-22}InGaN/GaN quantum wells2009

    • Author(s)
      Y.Kawakami
    • Organizer
      6th International Workshop on Bulk Nitride Semiconductors(Invited)
    • Place of Presentation
      Galindia Mazurski Eden, Poland
    • Year and Date
      2009-08-25
    • Related Report
      2009 Annual Research Report
  • [Presentation] Ni微粒子を用いたInGaN/GaNコア・シェルナノワイヤの有機金属気相成長2009

    • Author(s)
      船戸充, 畑田芳隆, 川上養一
    • Organizer
      第1回窒化物半導体結晶成長講演会
    • Place of Presentation
      東京農工大学(東京都)
    • Year and Date
      2009-06-16
    • Related Report
      2009 Annual Research Report
  • [Presentation] Characterization and control of recombination process in nitride semiconductors2009

    • Author(s)
      Y. Kawakami, A. Kaneta, M. Ueda and M. Funato
    • Organizer
      E-MRS Spring meeting 2009
    • Place of Presentation
      Strasbourg, France
    • Year and Date
      2009-06-11
    • Related Report
      2013 Final Research Report
    • Invited
  • [Presentation] Characterization and control of recombination process in nitride semicon ductors2009

    • Author(s)
      Y.Kawakami, A.Kaneta, M.Ueda, M.Funato
    • Organizer
      E-MRS Spring meeting 2009(Invited)
    • Place of Presentation
      Strasbourg, France
    • Year and Date
      2009-06-11
    • Related Report
      2009 Annual Research Report
  • [Presentation] Positive biexciton binding energy in a localization center of a single InGaN/GaN quantum disk : internal electric field drastically reduced2009

    • Author(s)
      R.Bardoux, A.Kaneta, M.Funato, Y.Kawakami, A.Kikuchi, K.Kishino
    • Organizer
      E-MRS Spring meeting 2009
    • Place of Presentation
      Strasbourg, France
    • Year and Date
      2009-06-08
    • Related Report
      2009 Annual Research Report
  • [Presentation] Intense Surface Emission from Al-rich(0001)AlGaN/AlN Quantum Wells2009

    • Author(s)
      R.G.Banal, M.Funato, Y.Kawakami
    • Organizer
      E-MRS Spring meeting 2009
    • Place of Presentation
      Strasbourg, France
    • Year and Date
      2009-06-08
    • Related Report
      2009 Annual Research Report
  • [Presentation] 放射光マイクロX線回析を用いたマイクロファセット上InGaN/GaN量子井戸構造の評価2009

    • Author(s)
      榊篤史, 川村朋晃, 大野裕孝, 上田雅也, 船戸充, 川上養一, 木村滋, 坂田修身
    • Organizer
      第56回応用物理学会関係連合講演会
    • Place of Presentation
      筑波大学(茨城県)
    • Year and Date
      2009-04-02
    • Related Report
      2009 Annual Research Report
  • [Presentation] 高Al組合AlGaN/AlN量子井戸構造における高効率発光2009

    • Author(s)
      大音隆男, Ryan Banal, 船戸充, 川上養一
    • Organizer
      第56回応用物理学会関係連合講演会
    • Place of Presentation
      筑波大学(茨城県)
    • Year and Date
      2009-04-01
    • Related Report
      2009 Annual Research Report
  • [Presentation] ntense Surface Emission at 222nm from(0001)Al0.82Ga0.18N/AlN Quantum Wells2009

    • Author(s)
      R.G.Banal, M.Funato, Y.Kawakami
    • Organizer
      JSAP the 56th Spring Meeting
    • Place of Presentation
      Ibaragi, Japan
    • Year and Date
      2009-04-01
    • Related Report
      2009 Annual Research Report
  • [Presentation] Impact of crystal orientation on InGaN-based efficient visible light emitters

    • Author(s)
      M. Funato and Y. Kawakami
    • Organizer
      Conf. on LED and its industrial application '13 (LEDIA'13)
    • Place of Presentation
      Yokohama, Japan
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Synthesis of aluminum nitride powders emitting in near ultraviolet spectral range

    • Author(s)
      P. T. Wu, M. Funato and Y. Kawakami
    • Organizer
      6th Asia-Pacific Workshop on Widegap Semiconductors
    • Place of Presentation
      New Taipei City, Taiwan
    • Related Report
      2013 Annual Research Report
  • [Presentation] Optimal growth pressure for high quality semipolar (1-102) AlN homoepitaxial films

    • Author(s)
      S. Ichikawa, M. Funato, S. Nagata and Y. Kawakami
    • Organizer
      40th Intern. Symp. on Compound Semiconductors
    • Place of Presentation
      Kobe, Japan
    • Related Report
      2013 Annual Research Report
  • [Presentation] Well width dependence of exciton dynamics in semipolar (11-22) InGaN/GaN single quantum wells

    • Author(s)
      T. Ozaki, J. Nishinaka, M. Funato and Y. Kawakami
    • Organizer
      40th Intern. Symp. on Compound Semiconductors
    • Place of Presentation
      Kobe, Japan
    • Related Report
      2013 Annual Research Report
  • [Presentation] Determination of deformation potentials in GaN and AlN for the design of strained AlGaN-based quantum structures

    • Author(s)
      R. Ishii, M. Funato and Y. Kawakami
    • Organizer
      E-MRS
    • Place of Presentation
      Strasbourg, France
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Semipolar faceting for InGaN-based polychromatic LEDs

    • Author(s)
      M. Funato and Y. Kawakami
    • Organizer
      CLEO:2013
    • Place of Presentation
      San Jose, USA
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Local photoluminescence properties of InGaN green laser structure on (0001) GaN substrate

    • Author(s)
      A. Kaneta, T. Hira, Y. S. Kim, M. Funato, Y. Kawakami, T. Miyoshi, and S. Nagahama
    • Organizer
      10th Conf. on Lasers and Electo-Optics Pasific Rim, and 18th OptoElectonics and Communications Conf/Photonics in Switching 2013
    • Place of Presentation
      Kyoto, Japan
    • Related Report
      2013 Annual Research Report
  • [Presentation] Impact of substrate orientation on GaN homoepitaxial layers:

    • Author(s)
      J. Nishinaka, M. Funato and Y. Kawakami
    • Organizer
      10th Intern. Conf. on Nitride Semiconductors
    • Place of Presentation
      Washington DC, USA
    • Related Report
      2013 Annual Research Report
  • [Presentation] Mechanism of pit generation and elimination of semipolar (1-102) AlN homoepitaxial films

    • Author(s)
      S. Ichikawa, M. Funato, S. Nagata and Y. Kawakami
    • Organizer
      10th Intern. Conf. on Nitride Semiconductors
    • Place of Presentation
      Washington DC, USA
    • Related Report
      2013 Annual Research Report
  • [Presentation] Verification of internal field presence in InGaN/GaN semipolar quantum wells

    • Author(s)
      G. Staszczak, T. Suski, P. Perlin, M. Funato and Y. Kawakami
    • Organizer
      10th Intern. Conf. on Nitride Semiconductors
    • Place of Presentation
      Washington DC, USA
    • Related Report
      2013 Annual Research Report
  • [Presentation] Does temperature-induced ``S-shaped'' photoluminescence peak shift directly indicate potential tail?

    • Author(s)
      T. Ozaki, J. Nishinaka, M. Funato and Y. Kawakami
    • Organizer
      10th Intern. Conf. on Nitride Semiconductors
    • Place of Presentation
      Washington DC, USA
    • Related Report
      2013 Annual Research Report
  • [Presentation] Deep UV photoluminescence mappings of Al-rich AlGaN/AlN quantum wells by confocal microscopy

    • Author(s)
      Y. Iwata, A. Kaneta, R. G. Banal, M. Funato and Y. Kawakami
    • Organizer
      10th Intern. Conf. on Nitride Semiconductors
    • Place of Presentation
      Washington DC, USA
    • Related Report
      2013 Annual Research Report
  • [Presentation] Largest electron-hole exchange interaction among typical III-V and II-VI compound semiconductors observed in AlN

    • Author(s)
      R. Ishii, M. Funato and Y. Kawakami
    • Organizer
      10th Intern. Conf. on Nitride Semiconductors
    • Place of Presentation
      Washington DC, USA
    • Related Report
      2013 Annual Research Report
  • [Presentation] Origin of exciton localization in Al-rich AlGaN/AlN quantum wells

    • Author(s)
      T. Oto, R. G. Banal, M. Funato and Y. Kawakami
    • Organizer
      10th Intern. Conf. on Nitride Semiconductors
    • Place of Presentation
      Washington DC, USA
    • Related Report
      2013 Annual Research Report
  • [Presentation] Large shifts of free excitonic transition energies and phonon frequency of AlN coherently-grown on 6H-SiC (0001) due to strong in-plane compressive strain

    • Author(s)
      M. Kaneko, H. Okumura, R. Ishii, M. Funato, Y. Kawakami, T. Kimoto and J. Suda
    • Organizer
      10th Intern. Conf. on Nitride Semiconductor
    • Place of Presentation
      Washington DC, USA
    • Related Report
      2013 Annual Research Report
  • [Presentation] Optical properties of Al-rich AIGaN quantum wells and their application to electron-beam pumped Deep-UV emitters

    • Author(s)
      Y. Kawakami and M. Funato
    • Organizer
      UV-DUV Plasmonics and Nanophotonics Workshop
    • Place of Presentation
      Osaka, Japan
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] III-nitride semiconductors: current status and future prospect

    • Author(s)
      Y. Kawakami and M. Funato
    • Organizer
      1st KANSAI Nanoscience and Nanotechnology International Symposium
    • Place of Presentation
      Osaka, Japan
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Multi-wavelength light emission from threedimensional AlGaN quantum wells fabricated on facet structures

    • Author(s)
      K. Kataoka, M. Yamaguchi, K. Fukushima, M. Funato and Y. Kawakami
    • Organizer
      2014 Photonics West
    • Place of Presentation
      San Francisco, California, USA
    • Related Report
      2013 Annual Research Report
  • [Presentation] Excitonic fine structure of AlN studied by polarization-resolved photoluminescence spectroscopy

    • Author(s)
      R. Ishii, M. Funato and Y. Kawakami
    • Organizer
      32nd Electronic Materials Symposium
    • Place of Presentation
      Laforet Biwako, Shiga
    • Related Report
      2013 Annual Research Report
  • [Presentation] Exciton localization characteristics in Al-rich AlGaN/AlN quantum wells

    • Author(s)
      T. Oto, R. G. Banal, M. Funato and Y. Kawakami
    • Organizer
      32nd Electronic Materials Symposium
    • Place of Presentation
      Laforet Biwako, Shiga
    • Related Report
      2013 Annual Research Report
  • [Presentation] New polytypes (4H, 6H) of III-nitrides grown by hetero-step-flow mode on vicinal SiC subtrates

    • Author(s)
      Y. Ishiyama, M. Takaki, Y. Hagihara, J. Nishinaka, M. Funato, Y. Kawakami, A. Hashimoto and S. Tanaka
    • Organizer
      32nd Electronic Materials Symposium
    • Place of Presentation
      Laforet Biwako, Shiga
    • Related Report
      2013 Annual Research Report
  • [Presentation] Remarkable surface morphology improvement of semipolar (1-102) AlN homoepitaxial films by nucleation control growth

    • Author(s)
      S. Ichikawa, M. Funato S. Nagata and Y. Kawakami
    • Organizer
      32nd Electronic Materials Symposium
    • Place of Presentation
      Laforet Biwako, Shiga
    • Related Report
      2013 Annual Research Report
  • [Presentation] Growth characteristics of semipolar {11-22} GaN homoepitaxial layers

    • Author(s)
      J. Nishinaka, M. Funato and Y. Kawakami
    • Organizer
      32nd Electronic Materials Symposium
    • Place of Presentation
      Laforet Biwako, Shiga
    • Related Report
      2013 Annual Research Report
  • [Presentation] Impact of recombination lifetimes on exciton hopping in semipolar (11-22) InGaN quantum wells

    • Author(s)
      T. Ozaki, J. Nishinaka, M. Funato and Y. Kawakami
    • Organizer
      32nd Electronic Materials Symposium
    • Place of Presentation
      Laforet Biwako, Shiga
    • Related Report
      2013 Annual Research Report
  • [Presentation] 半極性(1-1-2)AlN基板上へのAlGaN/AlN量子井戸構造の作製

    • Author(s)
      市川修平, 船戸 充, 永田俊郎, 川上養一
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学, 京都府
    • Related Report
      2013 Annual Research Report
  • [Presentation] 半極性{11-22}GaNホモエピタキシャル膜における不純物の取り込み

    • Author(s)
      西中淳一, 船戸 充, 川上養一
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学, 京都府
    • Related Report
      2013 Annual Research Report
  • [Presentation] 選択励起条件下における高Al組成AlGaN/AlN量子井戸の弱励起時間分解発光測定

    • Author(s)
      岩田佳也, 金田昭男, R. G. Banal, 船戸 充, 川上養一
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学, 京都府
    • Related Report
      2013 Annual Research Report
  • [Presentation] 高Al組成AlGaN/AlN量子井戸における光学利得特性の井戸幅依存性

    • Author(s)
      大音隆男, R. G. Banal, 船戸 充, 川上養一
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学, 京都府
    • Related Report
      2013 Annual Research Report
  • [Presentation] (Al,Ga)N系歪み量子構造の電子状態計算

    • Author(s)
      石井良太, 船戸 充, 川上養一
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学, 京都府
    • Related Report
      2013 Annual Research Report
  • [Presentation] Remarkably suppressed luminescence inhomogeneity in state-of-the-art InGaN green emitting structures

    • Author(s)
      A. Kaneta, M. Funato and Y. Kawakami
    • Organizer
      2013 JSAP-MRS Joint Symposia, Sympsium (応物併設)
    • Place of Presentation
      Kyoto, Japan
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Temperature-induced luminescence peak shift correlated with exciton lifetime in semipolar (11-22) InGaN/GaN quantum wells

    • Author(s)
      T. Ozaki, J. Nishinaka, M. Funato and Y. Kawakami
    • Organizer
      2013 JSAP-MRS Joint Symposia, Sympsium (応物併設)
    • Place of Presentation
      Kyoto, Japan
    • Related Report
      2013 Annual Research Report
  • [Presentation] Structural and optical characterization of 2H-AlN coherently-grown on 6H-SiN (0001) by plasma-assisted molecular beam epitaxy

    • Author(s)
      M. Kaneko, H. Okumura, R. Ishii, M. Funato, Y. Kawakami, T. Kimoto and J. Suda
    • Organizer
      2013 JSAP-MRS Joint Symposia, Sympsium (応物併設)
    • Place of Presentation
      Kyoto, Japan
    • Related Report
      2013 Annual Research Report
  • [Presentation] Homoepitaxy of AlN on semipolar (1-102) substrates grown by physical vapor transport method

    • Author(s)
      S. Ichikawa, M. Funato, S. Nagata and Y. Kawakami
    • Organizer
      2013 JSAP-MRS Joint Symposia, Sympsium (応物併設)
    • Place of Presentation
      Kyoto, Japan
    • Related Report
      2013 Annual Research Report
  • [Presentation] 窒化物半導体ナノ構造の励起子ダイナミクスと超高効率発光素子実現へのアプローチ

    • Author(s)
      船戸 充,金田昭男,川上養一
    • Organizer
      レーザー学会創立40周年記念学術講演会 第34回年次大会
    • Place of Presentation
      北九州国際会議場, 福岡県
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] 近接場分光法による窒化物半導体の再結合機構解明

    • Author(s)
      川上養一, 船戸 充, 金田昭男
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス, 神奈川県
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] 高品質半極性面AlGaN/AlN量子井戸構造における内部電界の抑制と短い輻射再結合寿命の実現

    • Author(s)
      市川修平, 船戸 充, 川上養一
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス, 神奈川県
    • Related Report
      2013 Annual Research Report
  • [Presentation] 半極性面AlGaN/AlN量子井戸発光の面内偏光制御

    • Author(s)
      市川修平, 石井良太, 船戸 充, 川上養一
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス, 神奈川県
    • Related Report
      2013 Annual Research Report
  • [Presentation] 半極性(11-22)InGaN/AlGaN応力補償超格子のコヒーレント成長

    • Author(s)
      西中淳一, 船戸 充, 川上養一
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス, 神奈川県
    • Related Report
      2013 Annual Research Report
  • [Presentation] AlNの励起子束縛エネルギー:電子正孔交換相互作用と励起子格子相互作用

    • Author(s)
      石井良太, 船戸 充, 川上養一
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス, 神奈川県
    • Related Report
      2013 Annual Research Report
  • [Presentation] Temperature dependent exciton dynamics in Al-rich AlGaN/AlN quantum wells assessed by cathodoluminescence mapping measurements

    • Author(s)
      大音隆男, 岩田佳也, D. Gachet,M. Benameur,R. Banal,船戸 充,川上養一
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス, 神奈川県
    • Related Report
      2013 Annual Research Report
  • [Presentation] Co-existence of a few and sub μm inhomogeneity in Al-rich AlGaN/AlN quantum wells

    • Author(s)
      岩田佳也, 大音隆男, D. Gachet,M. Benameur,R. Banal,船戸 充,川上養一
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス, 神奈川県
    • Related Report
      2013 Annual Research Report
  • [Presentation] 半極性(11-22)GaN基板上InGaN単一量子井戸における面内発光分布の近接場光学顕微鏡による評価

    • Author(s)
      尾崎拓也, 西中淳一, 金田昭男, 船戸 充, 川上養一
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス, 神奈川県
    • Related Report
      2013 Annual Research Report
  • [Presentation] Inhomogeneously broadened gain spectra in InGaN based laser diodes

    • Author(s)
      K. Kojima, M. Funato, Y. Kawakami and S. Noda
    • Organizer
      DYCE-ASIA Workshop
    • Place of Presentation
      Tokyo, Japan
    • Related Report
      2012 Annual Research Report
  • [Presentation] SNOM Characterization on Inhomogenity and Defects in III-N Alloy Semiconductors

    • Author(s)
      Y. Kawakami
    • Organizer
      Intern. Workshop on SMART Energy Harvesting and Saving with III-Nitride Semiconductors
    • Place of Presentation
      Chiba, Japan
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] High Quality AlGaN-Based Quantum Wells for Deep-Ultraviolet Emitters

    • Author(s)
      M. Funato
    • Organizer
      16th Intern. Conf. on Metal Organic Vapor Phase Epitaxy
    • Place of Presentation
      Busan, Korea
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] Optical Gain Properties of (0001) Oriented InGaN-Based Green Laser Diodes with Low Threshold Current Density

    • Author(s)
      Y. S. Kim, A. Kaneta, M. Funato, Y. Kawakami, T. Miyoshi and S. Nagahama
    • Organizer
      16th Intern. Conf. on Metal Organic Vapor Phase Epitaxy
    • Place of Presentation
      Busan, Korea
    • Related Report
      2012 Annual Research Report
  • [Presentation] Observation of Exciton-Phonon Interaction in AlGaN/AlN Quantum Wells

    • Author(s)
      R. G. Banal, M. Funato and Y. Kawakami
    • Organizer
      4th Intern. Symp. on Growth of III-Nitrides
    • Place of Presentation
      Saint-Petersburg, Russia
    • Related Report
      2012 Annual Research Report
  • [Presentation] Exciton Dynamics in Semipolar (11-22) InGaN Single Quantum Wells

    • Author(s)
      J. Nishinaka, T. Ozaki, M. Funato and Y. Kawakami
    • Organizer
      Intern. Workshop on Nitride Semiconductors
    • Place of Presentation
      Sapporo, Japan
    • Related Report
      2012 Annual Research Report
  • [Presentation] Strong Exciton-Phonon Interaction in AlGaN/AlN Quantum Wells

    • Author(s)
      R. G. Banal, M. Funato and Y. Kawakami
    • Organizer
      Intern. Workshop on Nitride Semiconductors
    • Place of Presentation
      Sapporo, Japan
    • Related Report
      2012 Annual Research Report
  • [Presentation] Thick and Crack-free AlN Films by NH3 Nitridation of Sapphire Substrate

    • Author(s)
      R. G. Banal, Y. Akashi, K. Matsuda, Y. Hayashi, M. Funato and Y. Kawakami
    • Organizer
      Intern. Workshop on Nitride Semiconductors
    • Place of Presentation
      Sapporo, Japan
    • Related Report
      2012 Annual Research Report
  • [Presentation] Exciton Localization Phenomena in Al-rich AlGaN/AlN Quantum Wells

    • Author(s)
      T. Oto, R. G. Banal, M. Funato and Y. Kawakami
    • Organizer
      Intern. Workshop on Nitride Semiconductors
    • Place of Presentation
      Sapporo, Japan
    • Related Report
      2012 Annual Research Report
  • [Presentation] Determination of the deformation potentials in aluminum nitride: Breakdown of the quasicubic approximation in AlN as well as GaN

    • Author(s)
      R. Ishii, A. Kaneta, M. Funato and Y. Kawakami
    • Organizer
      Intern. Workshop on Nitride Semiconductors
    • Place of Presentation
      Sapporo, Japan
    • Related Report
      2012 Annual Research Report
  • [Presentation] Nanoscopic PL properties in green emitting InGaN single quantum well on {20-21} GaN substrate probed by scanning near field optical microscopy

    • Author(s)
      A. Kaneta, Y. S. Kim, M. Funato, Y. Kawakami, Y. Enya, T. Kyono, M. Ueno and T. Nakamura
    • Organizer
      Intern. Workshop on Nitride Semiconductors
    • Place of Presentation
      Sapporo, Japan
    • Related Report
      2012 Annual Research Report
  • [Presentation] `New polytypes (4H, 6H) of III-nitrides grown by hetero-step-flow mode on vicinal SiC surfaces

    • Author(s)
      Y. Ishiyama, M. Takaki, Y. Hagihara, J. Nishinaka, M. Funato, Y. Kawakami, A. Hashimoto and S. Tanaka
    • Organizer
      Intern. Workshop on Nitride Semiconductors
    • Place of Presentation
      Sapporo, Japan
    • Related Report
      2012 Annual Research Report
  • [Presentation] Formation Mechanism and Elimination of Lowangle Grain Boundaries in AlN through Control of Heterointerface with Sapphire (0001) Substrate

    • Author(s)
      Y. Hayashi, R. G. Banal, K. Matsuda, M. Funato and Y. Kawakami
    • Organizer
      Intern. Workshop on Nitride Semiconductors
    • Place of Presentation
      Sapporo, Japan
    • Related Report
      2012 Annual Research Report
  • [Presentation] Epitaxial Growth of AlN and Related Alloys

    • Author(s)
      M. Funato
    • Organizer
      Collaborative Conference on Crystal Growth
    • Place of Presentation
      Orlando, Florida, USA
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] 結晶からの発光を診る 空間・時間分解分光による評価

    • Author(s)
      川上養一
    • Organizer
      第4回窒化物半導体結晶成長講演会
    • Place of Presentation
      東京大学生産技術研究所, 東京都
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] へテロステップフローによる6H, 4H-GaNの成長と評価

    • Author(s)
      石山裕策, 西中淳一, 船戸 充, 川上養一, 橋本明弘, 田中 悟
    • Organizer
      第4回窒化物半導体結晶成長講演会
    • Place of Presentation
      東京大学生産技術研究所, 東京都
    • Related Report
      2012 Annual Research Report
  • [Presentation] 非極性面上InGaN/GaN多重量子井戸の異方性を考慮した臨界膜厚

    • Author(s)
      西中淳一, 船戸 充, 川上養一
    • Organizer
      第4回窒化物半導体結晶成長講演会
    • Place of Presentation
      東京大学生産技術研究所, 東京都
    • Related Report
      2012 Annual Research Report
  • [Presentation] 窒化物半導体発光デバイスの現状と挑戦-光物性の理解と制御によるアプローチ

    • Author(s)
      川上養一
    • Organizer
      応用物理学会 応用電子物性分科会研究例会 窒化物半導体光デバイスの最前線 デバイスと光物性(基調講演)
    • Place of Presentation
      京都テルサ, 京都府
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] 近接場マルチプローブ分光技術の開発 -ナノ構造における素励起の可視化を目指して-

    • Author(s)
      川上養一
    • Organizer
      日本分光学会ナノ分光部会第4回シンポジウム「非局所的・協同的現象を理解し、制御するためのナノ光学」
    • Place of Presentation
      慶應義塾大学日吉キャンパス, 神奈川県
    • Related Report
      2012 Annual Research Report
  • [Presentation] Emission properties of localized excitons in weakly excited Al-rich AlGaN/AlN quantum wells

    • Author(s)
      T. Oto, R. G. Banal, M. Funato and Y. Kawakami
    • Organizer
      31st Electronic Materials Symposium
    • Place of Presentation
      Laforet Shuzenji, Shizuoka
    • Related Report
      2012 Annual Research Report
  • [Presentation] Structural and optical characterization of homoepitaxial AlN film

    • Author(s)
      R. Ishii, K. Matsuda, R. G. Banal, M. Funato and Y. Kawakami
    • Organizer
      31st Electronic Materials Symposium
    • Place of Presentation
      Laforet Shuzenji, Shizuoka
    • Related Report
      2012 Annual Research Report
  • [Presentation] Hydrostatic and uniaxial deformation potentials in aluminum nitride: Breakdown of the quasicubic approximation in AlN

    • Author(s)
      R. Ishii, A. Kaneta, M. Funato and Y. Kawakami
    • Organizer
      31st Electronic Materials Symposium
    • Place of Presentation
      Laforet Shuzenji, Shizuoka
    • Related Report
      2012 Annual Research Report
  • [Presentation] Critical layer thicknesses of anisotropic heterostructures: non-c-plane InGaN/GaN multiple quantum wells

    • Author(s)
      J. Nishinaka, M. Funato and Y. Kawakami
    • Organizer
      31st Electronic Materials Symposium
    • Place of Presentation
      Laforet Shuzenji, Shizuoka
    • Related Report
      2012 Annual Research Report
  • [Presentation] 半極性(-1-12-2)GaN基板上に成長したInGaN低次元構造の光学特性

    • Author(s)
      西中淳一, 船戸 充, 川上養一
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学・松山大学, 愛媛県
    • Related Report
      2012 Annual Research Report
  • [Presentation] Role of Growth Spirals in AlGaN Quantum Wells

    • Author(s)
      R. G. Banal, Y. Akashi, K. Matsuda, Y. Hayashi, M. Funato and Y. Kawakami
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学・松山大学, 愛媛県
    • Related Report
      2012 Annual Research Report
  • [Presentation] Thick and Crack-free AlN Films by NH3 Nitridation of Sapphire Substrate

    • Author(s)
      R. G. Banal, Y. Akashi, K. Matsuda, Y. Hayashi, M. Funato and Y. Kawakami
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学・松山大学, 愛媛県
    • Related Report
      2012 Annual Research Report
  • [Presentation] Exciton-LO Phonon Coupling Strength in AlGaN/AlN Quantum Wells

    • Author(s)
      R. G. Banal, M. Funato and Y. Kawakami
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学・松山大学, 愛媛県
    • Related Report
      2012 Annual Research Report
  • [Presentation] 高Al組成AlGaN/AlN量子井戸における発光メカニズムの励起密度依存性

    • Author(s)
      大音隆男, R. G. Banal, 船戸 充, 川上養一
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学・松山大学, 愛媛県
    • Related Report
      2012 Annual Research Report
  • [Presentation] 高Al組成AlGaN/AlN量子井戸におけるPLスペクトルの励起強度依存性

    • Author(s)
      岩田佳也, R. G. Banal, 船戸 充, 川上養一
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学・松山大学, 愛媛県
    • Related Report
      2012 Annual Research Report
  • [Presentation] 窒化アルミニウムにおける一軸性変形ポテンシャルの同定

    • Author(s)
      石井良太,金田昭男,船戸 充,川上養一
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学・松山大学, 愛媛県
    • Related Report
      2012 Annual Research Report
  • [Presentation] 半極性 (11-22) InGaN/GaN 量子井戸における励起子ダイナミクス

    • Author(s)
      尾崎拓也, 西中淳一, 船戸 充, 川上養一
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学・松山大学, 愛媛県
    • Related Report
      2012 Annual Research Report
  • [Presentation] 緑色発光{20-21}GaN基板上InGaN量子井戸の近接場顕微発光測定

    • Author(s)
      金田昭男, 金 潤碩, 船戸 充, 川上養一, 塩谷陽平, 京野孝史, 上野昌紀, 中村孝夫
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学・松山大学, 愛媛県
    • Related Report
      2012 Annual Research Report
  • [Presentation] SiC上ヘテロステップフローによる6H, 4H-GaNの成長と評価

    • Author(s)
      高木勝也, 石山裕策, 西中淳一, 船戸充, 川上養一, 橋本明弘, 田中 悟
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学・松山大学, 愛媛県
    • Related Report
      2012 Annual Research Report
  • [Presentation] Contribution of low inhomogeneous broadening to the optical gain of a (0001) oriented InGaN-based green laser diode

    • Author(s)
      金 潤碩, 金田昭男,船戸 充, 川上養一
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学・松山大学, 愛媛県
    • Related Report
      2012 Annual Research Report
  • [Presentation] Structure Dependence of Surface Plasmon Enhanced Photoluminescence

    • Author(s)
      Xiaoying Xu,M. Funato,Y. Kawakami,K. Okamoto and K. Tamada
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学・松山大学, 愛媛県
    • Related Report
      2012 Annual Research Report
  • [Presentation] マクロなステップ構造を有するAlN上へのAlGaN/AlN量子構造の作製

    • Author(s)
      林 佑樹,Ryan Banal,M. Funato,Y. Kawakami
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学・松山大学, 愛媛県
    • Related Report
      2012 Annual Research Report
  • [Presentation] Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates

    • Author(s)
      Y. S. Kim, A. Kaneta, M. Funato, Y. Kawakami, T. Miyoshi, S. Nagahama
    • Organizer
      電子情報通信学会 レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      大阪市立大学, 大阪府
    • Related Report
      2012 Annual Research Report
  • [Presentation] 白色LEDの現状と次世代デバイスへのアプローチ -テーラーメイド固体照明を目指して-

    • Author(s)
      川上養一
    • Organizer
      京都光技術研究会第3回光ものづくりセミナー -LEDの進展と広がるアプリケーション-
    • Place of Presentation
      京都府産業支援センター, 京都府
    • Related Report
      2012 Annual Research Report
  • [Presentation] 半極性GaNバルク基板上への緑色発光InGaN量子井戸の作製と物性

    • Author(s)
      西中淳一, 船戸 充, 川上養一
    • Organizer
      第5回文部科学省「最先端の光の創成を目指したネットワーク研究拠点プログラム」シンポジウム
    • Place of Presentation
      日本科学未来館, 東京都
    • Related Report
      2012 Annual Research Report
  • [Presentation] 緑色発光InGaN量子井戸の近接場光学分光

    • Author(s)
      金田昭男, 船戸 充, 川上養一
    • Organizer
      第5回文部科学省「最先端の光の創成を目指したネットワーク研究拠点プログラム」シンポジウム
    • Place of Presentation
      日本科学未来館, 東京都
    • Related Report
      2012 Annual Research Report
  • [Presentation] アルミニウムを用いたInGaN系量子井戸の表面プラズモン発光増強

    • Author(s)
      立石和隆,Xu Xiaoying,船戸 充, 川上養一, 岡本晃一, 玉田 薫
    • Organizer
      弟60回応用物理学会関係連合講演会
    • Place of Presentation
      神奈川工科大学, 神奈川県
    • Related Report
      2012 Annual Research Report
  • [Presentation] 半極性{11-22}GaNホモエピタキシにおけるV/III比の影響

    • Author(s)
      西中淳一, 船戸 充, 川上養一
    • Organizer
      弟60回応用物理学会関係連合講演会
    • Place of Presentation
      神奈川工科大学, 神奈川県
    • Related Report
      2012 Annual Research Report
  • [Presentation] (1102)基板上へのAlNホモエピタキシーにおける成長圧力の最適化

    • Author(s)
      市川修平, 船戸 充, 永田俊郎, 川上養一
    • Organizer
      弟60回応用物理学会関係連合講演会
    • Place of Presentation
      神奈川工科大学, 神奈川県
    • Related Report
      2012 Annual Research Report
  • [Presentation] 高Al組成AlGaN/AlN量子井戸における励起子局在の起源

    • Author(s)
      大音隆男, ライアン バナル, 船戸 充, 川上養一
    • Organizer
      弟60回応用物理学会関係連合講演会
    • Place of Presentation
      神奈川工科大学, 神奈川県
    • Related Report
      2012 Annual Research Report
  • [Presentation] 共焦点顕微鏡による高Al組成AlGaN/AlN量子井戸のPLマッピング

    • Author(s)
      岩田佳也, 金田昭男, ライアン バナル, 船戸 充, 川上養一
    • Organizer
      弟60回応用物理学会関係連合講演会
    • Place of Presentation
      神奈川工科大学, 神奈川県
    • Related Report
      2012 Annual Research Report
  • [Presentation] AlNのPLスペクトルにおける特異なピークの起源

    • Author(s)
      石井良太, 船戸 充, 川上養一
    • Organizer
      弟60回応用物理学会関係連合講演会
    • Place of Presentation
      神奈川工科大学, 神奈川県
    • Related Report
      2012 Annual Research Report
  • [Presentation] InGaN/GaN量子井戸面内におけるキャリアの伝播・再結合過程の観測

    • Author(s)
      西川恭平,金田昭男,船戸 充,川上養一
    • Organizer
      弟60回応用物理学会関係連合講演会
    • Place of Presentation
      神奈川工科大学, 神奈川県
    • Related Report
      2012 Annual Research Report
  • [Presentation] 脱励起光下顕微フォトルミネッセンスによるInGaN/GaN量子井戸のキャリア再結合機構の評価

    • Author(s)
      田中優也,金田昭男,船戸 充,川上養一
    • Organizer
      弟60回応用物理学会関係連合講演会
    • Place of Presentation
      神奈川工科大学, 神奈川県
    • Related Report
      2012 Annual Research Report
  • [Presentation] InGaN/GaN SQWにおける非輻射再結合のキャリアダイナミクス

    • Author(s)
      井上航平, 金田昭男, 船戸 充,川上養一,岡本晃一
    • Organizer
      弟60回応用物理学会関係連合講演会
    • Place of Presentation
      神奈川工科大学, 神奈川県
    • Related Report
      2012 Annual Research Report
  • [Presentation] 半極性(1122)InGaN/GaN量子井戸における励起子ダイナミクスの井戸幅依存性

    • Author(s)
      尾崎拓也, 西中淳一, 船戸 充,川上養一
    • Organizer
      弟60回応用物理学会関係連合講演会
    • Place of Presentation
      神奈川工科大学, 神奈川県
    • Related Report
      2012 Annual Research Report
  • [Presentation] ナノ光励起による窒化物半導体の発光機構解明と制御へのアプローチ

    • Author(s)
      川上養一, 金田昭男, 船戸 充
    • Organizer
      弟60回応用物理学会関係連合講演会
    • Place of Presentation
      神奈川工科大学, 神奈川県
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Book] ワイドギャップ半導体-あけぼのから最前線へー 第3.3章「半極性・半極性面上新規高効率発光デバイス」pp.222-2322013

    • Author(s)
      船戸充,川上養一(分担執筆)
    • Total Pages
      11
    • Publisher
      培風館
    • Related Report
      2012 Annual Research Report
  • [Book] フォトニックナノ構造の最近の進展, 第9章2011

    • Author(s)
      川上養一, (分担執筆)
    • Publisher
      シーエムシー出版
    • Related Report
      2013 Final Research Report
  • [Book] フォトニツクナノ構造の最近の進展,第9章2011

    • Author(s)
      川上養一(分担執筆)
    • Publisher
      シーエムシー出版
    • Related Report
      2011 Annual Research Report
  • [Book] フォトニックナノ構造の最近の進展,第10章2011

    • Author(s)
      岡本晃一(分担執筆)
    • Publisher
      シーエムシー出版
    • Related Report
      2011 Annual Research Report
  • [Remarks]

    • URL

      http://www.optomater.kuee.kyoto-u.ac.jp/

    • Related Report
      2013 Final Research Report
  • [Remarks] 京都大学 工学研究科 電子工学専攻 量子機能工学講座 光材料物性工学分野

    • URL

      http://www.optomater.kuee.kyoto-u.ac.jp/

    • Related Report
      2013 Annual Research Report
  • [Remarks] 京都大学 工学研究科 電子工学専攻 量子機能工学講座 光材料物性工学分野

    • URL

      http://www.optomater.kuee.kyoto-u.ac.jp/

    • Related Report
      2012 Annual Research Report
  • [Remarks]

    • URL

      http://www.optomater.kuee.kyoto-u.ac.jp/

    • Related Report
      2011 Annual Research Report
  • [Remarks]

    • URL

      http://www.optomater.kuee.kyoto-u.ac.jp/

    • Related Report
      2010 Annual Research Report
  • [Remarks]

    • URL

      http://www.optomater.kuee.kyoto-u.ac.jp/

    • Related Report
      2009 Annual Research Report
  • [Patent(Industrial Property Rights)] 走査型プローブ顕微鏡及びそのプローブ近接検出方法2013

    • Industrial Property Rights Holder
      京都大学, 西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
    • Industrial Property Rights Type
      特許
    • Acquisition Date
      2013-07-02
    • Related Report
      2013 Final Research Report
    • Overseas
  • [Patent(Industrial Property Rights)] 走査型プローブ顕微鏡及びそのプローブ近接検出装置2012

    • Inventor(s)
      西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
    • Industrial Property Rights Holder
      京都大学, 西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
    • Filing Date
      2012-01-20
    • Related Report
      2011 Annual Research Report
    • Overseas
  • [Patent(Industrial Property Rights)] 走査型プローブ顕微鏡及びそのプローブ近接検出装置2011

    • Inventor(s)
      西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
    • Industrial Property Rights Holder
      京都大学, 西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
    • Industrial Property Number
      2010-128252
    • Filing Date
      2011-12-21
    • Related Report
      2011 Annual Research Report
  • [Patent(Industrial Property Rights)] 走査型プローブ顕微鏡及びそのプローブ近接検出装置2011

    • Inventor(s)
      西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
    • Industrial Property Rights Holder
      京都大学, 西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
    • Filing Date
      2011-12-22
    • Related Report
      2011 Annual Research Report
    • Overseas
  • [Patent(Industrial Property Rights)] 走査型プローブ顕微鏡及びそのプローブ近接検出装置2011

    • Inventor(s)
      西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
    • Industrial Property Rights Holder
      京都大学, 西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
    • Filing Date
      2011-12-22
    • Related Report
      2011 Annual Research Report
    • Overseas
  • [Patent(Industrial Property Rights)] 走査型プローブ顕微鏡及びそのプローブ近接検出方法2010

    • Inventor(s)
      西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
    • Industrial Property Rights Holder
      京都大学, 西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
    • Industrial Property Rights Type
      特許
    • Filing Date
      2010-06-21
    • Related Report
      2013 Final Research Report
    • Overseas
  • [Patent(Industrial Property Rights)] 走査型プローブ顕微鏡及びそのプローブ近接検出方法2010

    • Inventor(s)
      西村活人, 川上養一, 船戸充, 外2名
    • Industrial Property Rights Holder
      京都大学,外4名
    • Filing Date
      2010-06-21
    • Related Report
      2010 Annual Research Report
    • Overseas

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Published: 2009-04-01   Modified: 2019-07-29  

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