• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Defect Engineering in SiC and Application to Robust Devices with Ultrahigh Blocking Voltage

Research Project

Project/Area Number 21226008
Research Category

Grant-in-Aid for Scientific Research (S)

Allocation TypeSingle-year Grants
Research Field Electronic materials/Electric materials
Research InstitutionKyoto University

Principal Investigator

KIMOTO Tsunenobu  京都大学, 工学(系)研究科(研究院), 教授 (80225078)

Co-Investigator(Kenkyū-buntansha) SUDA Jun  京都大学, 大学院工学研究科, 准教授 (00293887)
NISHI Yusuke  京都大学, 大学院工学研究科, 助教 (10512759)
Project Period (FY) 2009-05-11 – 2014-03-31
Project Status Completed (Fiscal Year 2013)
Budget Amount *help
¥203,450,000 (Direct Cost: ¥156,500,000、Indirect Cost: ¥46,950,000)
Fiscal Year 2013: ¥29,770,000 (Direct Cost: ¥22,900,000、Indirect Cost: ¥6,870,000)
Fiscal Year 2012: ¥35,880,000 (Direct Cost: ¥27,600,000、Indirect Cost: ¥8,280,000)
Fiscal Year 2011: ¥41,210,000 (Direct Cost: ¥31,700,000、Indirect Cost: ¥9,510,000)
Fiscal Year 2010: ¥39,910,000 (Direct Cost: ¥30,700,000、Indirect Cost: ¥9,210,000)
Fiscal Year 2009: ¥56,680,000 (Direct Cost: ¥43,600,000、Indirect Cost: ¥13,080,000)
Keywords半導体 / パワーデバイス / 結晶欠陥 / キャリア寿命 / 絶縁破壊 / 炭化珪素 / 深い準位 / 拡張欠陥 / 点欠陥 / PiNダイオード / 接合終端
Research Abstract

Defect electronics in SiC and ultrahigh-voltage SiC power devices have been studied toward efficient electric power conversion employed for future smart grids. Fast epitaxy of high-purity SiC was developed, and extended defects in SiC epitaxial layers were systematically characterized. Physical properties of the major deep levels were elucidated. The carrier-lifetime killer defects could be eliminated, leading to remarkably enhanced carrier lifetimes. Control of carrier lifetimes was also achieved. Original junction-termination structures were proposed to achieve ultrahigh blocking voltage with SiC, and breakdown mechanism of SiC devices was discussed. By utilizing thick, lightly-doped SiC epitaxial layers and the original device structures, ultrahigh-voltage (> 20 kV) PiN diodes and npn bipolar transistors were realized. The performance was significantly improved by enhancement of carrier lifetimes, and high-temperature operation of SiC devices was demonstrated.

Assessment Rating
Verification Result (Rating)

A

Report

(7 results)
  • 2014 Research Progress Assessment (Verification Result) ( PDF )
  • 2013 Annual Research Report   Final Research Report ( PDF )
  • 2012 Annual Research Report
  • 2011 Annual Research Report
  • 2010 Annual Research Report
  • 2009 Annual Research Report
  • Research Products

    (57 results)

All 2014 2013 2012 2011 2010 2009 Other

All Journal Article (25 results) (of which Peer Reviewed: 25 results) Presentation (23 results) (of which Invited: 9 results) Book (4 results) Remarks (1 results) Patent(Industrial Property Rights) (4 results)

  • [Journal Article] 高耐圧SiCパワーデバイスの進展と課題2014

    • Author(s)
      木本恒暢
    • Journal Title

      固体物理

      Volume: 49 Pages: 35-43

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Investigation on Origin of Z_<1/2> Cener in SiC by Deep Level Transient Spectroscopy and Electron Paramagnetic Resonance2013

    • Author(s)
      Koutarou Kawahara, et al.
    • Journal Title

      Applied Physics Letters

      Volume: 102 Issue: 11

    • DOI

      10.1063/1.4796141

    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Ultrahigh-voltage SiC PiN diodes with an improved junction termination extension structure and enhanced carrier lifetime2013

    • Author(s)
      N. Kaji, H. Niwa, J. Suda, and T. Kimoto
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 52 Issue: 7R Pages: 070204-070204

    • DOI

      10.7567/jjap.52.070204

    • NAID

      210000142425

    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Improvement of carrier lifetimes in highly Al-doped p-type 4H-SiC epitaxial layers by hydrogen passivation2013

    • Author(s)
      T. Okuda, T. Kimoto, and J. Suda
    • Journal Title

      Appl. Phys. Express

      Volume: 6

    • NAID

      40019923235

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Deep levels generated by thermal oxidation in n-type 4H-SiC2013

    • Author(s)
      K. Kawahara, J. Suda, and T. Kimoto,
    • Journal Title

      Appl. Phys. Exp.

      Volume: 6 Issue: 5 Pages: 051301-051301

    • DOI

      10.7567/apex.6.051301

    • NAID

      10031174299

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Deep Levels Generated by Thermal Oxidation in p-type 4H-SiC2013

    • Author(s)
      Koutarou Kawahara, et al.
    • Journal Title

      Journal of Applied Physics

      Volume: 113 Issue: 3

    • DOI

      10.1063/1.4776240

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Improvement of Carrier Lifetimes in Highly Al-Doped p-Type 4H-SiC Epitaxial Layers by Hydrogen Passivation2013

    • Author(s)
      Takafumi Okuda, Tsunenobu Kimoto, and Jun Suda
    • Journal Title

      Applied Physics Express

      Volume: 6 Issue: 12 Pages: 121301-121301

    • DOI

      10.7567/apex.6.121301

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] 21.7 kV 4H-SiC diode with a space-modulated junction termination extension2012

    • Author(s)
      H. Niwa, J. Suda, and T. Kimoto
    • Journal Title

      Appl. Phys. Exp

      Volume: 5 Issue: 6 Pages: 064001-064001

    • DOI

      10.1143/apex.5.064001

    • Related Report
      2013 Final Research Report 2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Carrier recombination in n-type 4H-SiC epilayers with long carrier lifetimes2012

    • Author(s)
      S. Ichikawa, K. Kawahara, J. Suda, and T. Kimoto
    • Journal Title

      Appl. Phys. Exp

      Volume: 5

    • NAID

      10031117540

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] 21-kV SiC BJTs with space-modulated junction termination extension2012

    • Author(s)
      H. Miyake, T. Okuda, H. Niwa, T. Kimoto, and J. Suda
    • Journal Title

      IEEE Electron Device Lett

      Volume: 33 Pages: 1598-1600

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Analytical model for reduction of deep levels in SiC by thermal oxidation2012

    • Author(s)
      K. Kawahara, J. Suda, and T. Kimoto
    • Journal Title

      J. Appl. Phys

      Volume: 111 Issue: 5

    • DOI

      10.1063/1.3692766

    • NAID

      120004057133

    • Related Report
      2013 Final Research Report 2012 Annual Research Report 2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Space-modulated junction termination extension for ultrahigh-voltage p-i-n diodes in 4H-SiC2012

    • Author(s)
      G. Feng, J. Suda, and T. Kimoto
    • Journal Title

      IEEE Trans. Electron Devices

      Volume: 59 Issue: 2 Pages: 414-418

    • DOI

      10.1109/ted.2011.2175486

    • Related Report
      2013 Final Research Report 2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Carrier recombination in n-type 4H-SiC epilayers with long carrier lifetimes2012

    • Author(s)
      S. Ichikawa, K. Kawahara, J. Suda, and T. Kimoto
    • Journal Title

      Appl. Phys Exp.

      Volume: 5 Issue: 10 Pages: 101301-101301

    • DOI

      10.1143/apex.5.101301

    • NAID

      10031117540

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] 21-kV SiC BJTs with space-modulated junction termination extension2012

    • Author(s)
      H. Miyake, T. Okuda, H. Niwa, T. Kimoto, and J. Suda
    • Journal Title

      IEEE Electron Device Lett.

      Volume: 33 Issue: 11 Pages: 1598-1600

    • DOI

      10.1109/led.2012.2215004

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Breakdown characteristics of 15-kV-class 4H-SiC PiN diodes with various junction termination structures2012

    • Author(s)
      H. Niwa, G. Feng, J. Suda, and T. Kimoto
    • Journal Title

      IEEE Trans. Electron Devices

      Volume: 59 Issue: 10 Pages: 2748-2752

    • DOI

      10.1109/ted.2012.2210044

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Nonradiative recombination at threading dislocations in 4H-SiC epilayers studied by micro-photoluminescence mapping2011

    • Author(s)
      G. Feng, J. Suda, and T. Kimoto
    • Journal Title

      J. Appl. Phys

      Volume: 110 Issue: 3

    • DOI

      10.1063/1.3622336

    • NAID

      120004920356

    • Related Report
      2013 Final Research Report 2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Impacts of reduction of deep levels and surface passivation on carrier lifetimes in p-tyne 4H-Sic epilavers2011

    • Author(s)
      T.Hayashi, T.Asano, J.Suda, T.Kimoto
    • Journal Title

      J.Appl.Phys.

      Volume: 109 Issue: 11

    • DOI

      10.1063/1.3583657

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] 高効率電力変換用SiCパワーデバイス2011

    • Author(s)
      木本恒暢
    • Journal Title

      応用物理

      Volume: 80 Pages: 673-678

    • NAID

      10029354680

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Sources of epitaxial growth-induced stacking faults in 4H-SiC2010

    • Author(s)
      G.Feng, J.Suda, T.Kimoto
    • Journal Title

      Journal of Electronic Material

      Volume: 39 Pages: 1166-1169

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Reduction of deep levels generated by ion implantation into n- and p-type 4H-SiC2010

    • Author(s)
      K.Kawahara, J.Suda, G.Pensl, T.Kimoto
    • Journal Title

      Journal of Applied Physics

      Volume: 108

    • NAID

      120003386608

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Impacts of recombination at the surface and in the substrate on carrier lifetimes of n-type 4H-SiC epilayers2010

    • Author(s)
      T.Kimoto, T.Hiyoshi, T.Hayashi, J.Suda
    • Journal Title

      Journal of Applied Physics

      Volume: 108

    • NAID

      120002661513

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Reduction of deep levels and improvement of carrier lifetime in n-type 4H-SiC by thermal oxidation2009

    • Author(s)
      T. Hiyoshi, and T. Kimoto
    • Journal Title

      Appl. Phys. Exp

      Volume: 2 Pages: 041101-041101

    • DOI

      10.1143/apex.2.041101

    • NAID

      10025085589

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Reduction of deep levels and improvement of carrier lifetime in n-type 4H-SiC by thermal oxidation2009

    • Author(s)
      T.Hiyoshi, T.Kimoto
    • Journal Title

      Applied Physics Express 2

    • NAID

      10025085589

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Detection and depth analyses of deep levels generated by ion implantation in n- and p-type 4H-SiC2009

    • Author(s)
      K.Kawahara, G.Alfieri, T.Kimoto
    • Journal Title

      Journal of Applied Physics 106

    • NAID

      120002086109

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Characterization of major in-grown stacking faults in 4H-SiC epilayers2009

    • Author(s)
      G.Feng, J.Suda, T.Kimoto
    • Journal Title

      Physica B : Condensed Matter 23-24

      Pages: 4745-4748

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Presentation] Ultrahigh-voltage SiC devices for future power infrastructure2013

    • Author(s)
      T. Kimoto
    • Organizer
      Proc. of 43th Europ. Solid-State Device Research Conf
    • Place of Presentation
      Bucharest
    • Related Report
      2013 Final Research Report
  • [Presentation] Junction technology in SiC for high-voltage power devices2013

    • Author(s)
      T. Kimoto, K. Kawahara, H. Niwa, T. Okuda, and J. Suda
    • Organizer
      Ext. Abstr. of IEEE 13th Int. Workshop on Junction Technology
    • Place of Presentation
      Kyoto
    • Related Report
      2013 Final Research Report
  • [Presentation] Fundamentals and frontiers of SiC power device technology2013

    • Author(s)
      T. Kimoto
    • Organizer
      Short Course of 25th Int. Symp. of Power Semiconductor Devices & ICs
    • Place of Presentation
      Kanazawa
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Junction technology in SiC for high-voltage power devices2013

    • Author(s)
      T. Kimoto, K. Kawahara, H. Niwa, T. Okuda, and J. Suda
    • Organizer
      IEEE 13th Int. Workshop on Junction Technology
    • Place of Presentation
      Kyoto
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Ultrahigh-voltage SiC devices for future power infrastructure2013

    • Author(s)
      T. Kimoto
    • Organizer
      43th Europ. Solid-State Device Research Conf.,
    • Place of Presentation
      Bucharest, Romania
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Ultrahigh-voltage (> 20 kV) SiC PiN diodes with a space-modulated JTE and lifetime enhancement process via thermal oxidation2013

    • Author(s)
      N. Kaji, H. Niwa, J. Suda, and T. Kimoto
    • Organizer
      Int. Conf. on Silicon Carbide and Related Materials 2013
    • Place of Presentation
      Miyazaki
    • Related Report
      2013 Annual Research Report
  • [Presentation] Temperature dependence of impact ionization coefficients in 4H-SiC2013

    • Author(s)
      H. Niwa, J. Suda, and T. Kimoto
    • Organizer
      Int. Conf. on Silicon Carbide and Related Materials 2013
    • Place of Presentation
      Miyazaki
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Progress and future challenges of high-voltage SiC power devices2013

    • Author(s)
      T. Kimoto, H. Miyake, H. Niwa, T. Okuda, N. Kaji, and J. Suda
    • Organizer
      2013 Materials Research Society Fall Meeting
    • Place of Presentation
      Boston, USA
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] "Defect electronics in SiC and fabrication of ultrahigh-voltage bipolar devices2012

    • Author(s)
      T. Kimoto, J. Suda, G. Feng, H. Miyake, K. Kawahara, H. Niwa, S. Ichikawa, and Y. Nishi
    • Organizer
      Electrochemical. Soc. Fall Meeting 2012
    • Place of Presentation
      Honolulu
    • Related Report
      2013 Final Research Report
  • [Presentation] Breakdown characteristics of 12-20 kV-class 4H-SiC PiN diodes with improved junction termination structures2012

    • Author(s)
      H. Niwa, G. Feng, J. Suda, and T. Kimoto
    • Organizer
      2012 24th Int. Symp. on Power Semiconductor Devices & IC's
    • Place of Presentation
      Bruges, Belgium
    • Related Report
      2012 Annual Research Report
  • [Presentation] Defect electronics in SiC and fabrication of ultrahigh-voltage bipolar devices2012

    • Author(s)
      T. Kimoto, J. Suda, G. Feng, H. Miyake, K. Kawahara, H. Niwa, T. Okuda, S. Ichikawa, and Y. Nishi
    • Organizer
      Electrochemical. Soc. Fall Meeting 2012
    • Place of Presentation
      Honolulu
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] Generation and elimination of the Z1/2 center in 4H-SiC2012

    • Author(s)
      T. Kimoto, K. Kawahara, B. Zippelius and J. Suda
    • Organizer
      2012 Spring Meeting, Materials Research Society
    • Place of Presentation
      San Francisco, USA
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] Defect electronics in SiC for high-voltage power devices2012

    • Author(s)
      T. Kimoto, J. Suda, K. Kawahara, H. Niwa, T. Okuda, N. Kaji, and S. Ichikawa
    • Organizer
      9th Europ. Conf. on Silicon Carbide and Related Materials
    • Place of Presentation
      St. Petersburg, Russia
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] Progress and future challenges of SiC power devices2012

    • Author(s)
      T. Kimoto and J. Suda
    • Organizer
      8th Handai Nanoscience and Nanotechnology Int. Symp.
    • Place of Presentation
      Osaka, Japan
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] High-voltage SiC power devices for energy electronics2011

    • Author(s)
      T.Kimoto, J.Suda
    • Organizer
      the 2011 Int.Conf.on Solid state Devices and Materials
    • Place of Presentation
      愛知県産業労働センター,名古屋、愛知(招待講演)
    • Year and Date
      2011-09-27
    • Related Report
      2011 Annual Research Report
  • [Presentation] Elimination of deep levels in thick SiC epilayers by thermal oxidation and proposal of the analytical model2011

    • Author(s)
      K.Kawahara, J.Suda, T.Kimoto
    • Organizer
      Int.Conf.on Silicon Carbide and Related Materials 2011
    • Place of Presentation
      ルネッサンスクリーブランドホテル,Cleveland, USA(招待講演)
    • Year and Date
      2011-09-16
    • Related Report
      2011 Annual Research Report
  • [Presentation] Experimental study on various junction terminat ion structures applied to 15kV 4H-SiC PiN diodes2011

    • Author(s)
      H.Niwa, G.Feng, J.Suda, T.Kimoto
    • Organizer
      Int.Conf.on Silicon Carbide and Related Materials 2011
    • Place of Presentation
      ルネッサンスクリーブランドホテル,Cleveland, USA
    • Year and Date
      2011-09-14
    • Related Report
      2011 Annual Research Report
  • [Presentation] Fast epitaxial growth and defect control of SiC toward ultra high-voltage power devices2011

    • Author(s)
      T.Kimoto, J.Suda, G.Feng
    • Organizer
      Asia-Paciffic Workshop on Widegap Semiconductors
    • Place of Presentation
      鳥羽国際ホテル,鳥羽、三重(招待講演)
    • Year and Date
      2011-05-22
    • Related Report
      2011 Annual Research Report
  • [Presentation] SiC R&D in Japan2011

    • Author(s)
      T.Kimoto
    • Organizer
      Int.SiC Power Electronics Applications Workshop
    • Place of Presentation
      Kista Science Tower, Stockholm, Sweden(招待講演)
    • Year and Date
      2011-05-03
    • Related Report
      2011 Annual Research Report
  • [Presentation] SiC technologies for future energy electronics2010

    • Author(s)
      T.Kimoto
    • Organizer
      2010 VLSI Technology Symposium
    • Place of Presentation
      Honolulu
    • Year and Date
      2010-06-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] SiC technologies for future energy electronics2010

    • Author(s)
      T. Kimoto
    • Organizer
      Tech. Digests of 2010 VLSI Technology Symp
    • Place of Presentation
      Honolulu
    • Related Report
      2013 Final Research Report
  • [Presentation] Defect control in growth and processing of 4H-SiC for power device applications2009

    • Author(s)
      T. Kimoto, G. Feng, T. Hiyoshi, K. Kawahara, M. Noborio, and J. Suda
    • Organizer
      Int. Conf. on Silicon Carbide and Related Materials 2009
    • Place of Presentation
      Nurnberg
    • Related Report
      2013 Final Research Report
  • [Presentation] Point and extended defects in SiC and their impact on modern technological processes2009

    • Author(s)
      T.Kimoto
    • Organizer
      25th Int. Conf. on Defects in Semiconductors
    • Place of Presentation
      St.Petersburg, Russia
    • Related Report
      2009 Annual Research Report
  • [Book] ワイドギャップ半導体 あけぼのから最前線へ2013

    • Author(s)
      木本恒暢
    • Publisher
      培風館
    • Related Report
      2012 Annual Research Report
  • [Book] "4H-SiC epitaxial growth and defect characterization", Silicon Carbide Epitaxy 42012

    • Author(s)
      T. Kimoto, G. Feng, K. Danno, T. Hiyoshi and J. Suda
    • Publisher
      Publisher Research Signpost
    • Related Report
      2013 Final Research Report
  • [Book] Silicon Carbide Epitaxy 42012

    • Author(s)
      T. Kimoto, G. Feng, K. Danno, T. Hiyoshi and J. Suda
    • Publisher
      Research Signpost,
    • Related Report
      2012 Annual Research Report
  • [Book] SiCパワーデバイス最新技術2010

    • Author(s)
      木本恒暢
    • Publisher
      サイエンス&テクノロジー
    • Related Report
      2010 Annual Research Report
  • [Remarks]

    • URL

      http://semicon.kuee.kyoto-u.ac.jp/

    • Related Report
      2013 Final Research Report
  • [Patent(Industrial Property Rights)] 半導体装置の製造方法および熱処理装置2013

    • Inventor(s)
      須田淳、奥田貴史、木本恒暢
    • Industrial Property Rights Holder
      京都大学
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2013-143504
    • Filing Date
      2013-07-09
    • Related Report
      2013 Final Research Report
  • [Patent(Industrial Property Rights)] 半導体装置、半導体装置の製造方法および熱処理装置2013

    • Inventor(s)
      須田淳、奥田貴史、木本恒暢
    • Industrial Property Rights Holder
      京都大学
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2013-143504
    • Filing Date
      2013-07-09
    • Related Report
      2013 Annual Research Report
  • [Patent(Industrial Property Rights)] 半導体素子及び半導体素子の製造2011

    • Inventor(s)
      木本恒暢、須田淳
    • Industrial Property Rights Holder
      京都大学
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2011-059992
    • Filing Date
      2011-03-18
    • Related Report
      2013 Final Research Report
  • [Patent(Industrial Property Rights)] 半導体素子及び半導体素子の製造方法2011

    • Inventor(s)
      木本恒暢
    • Industrial Property Rights Holder
      京都大学
    • Industrial Property Number
      2011-059992
    • Filing Date
      2011-03-18
    • Related Report
      2010 Annual Research Report

URL: 

Published: 2009-04-01   Modified: 2019-07-29  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi