|Budget Amount *help
¥203,450,000 (Direct Cost: ¥156,500,000、Indirect Cost: ¥46,950,000)
Fiscal Year 2013: ¥29,770,000 (Direct Cost: ¥22,900,000、Indirect Cost: ¥6,870,000)
Fiscal Year 2012: ¥35,880,000 (Direct Cost: ¥27,600,000、Indirect Cost: ¥8,280,000)
Fiscal Year 2011: ¥41,210,000 (Direct Cost: ¥31,700,000、Indirect Cost: ¥9,510,000)
Fiscal Year 2010: ¥39,910,000 (Direct Cost: ¥30,700,000、Indirect Cost: ¥9,210,000)
Fiscal Year 2009: ¥56,680,000 (Direct Cost: ¥43,600,000、Indirect Cost: ¥13,080,000)
Defect electronics in SiC and ultrahigh-voltage SiC power devices have been studied toward efficient electric power conversion employed for future smart grids. Fast epitaxy of high-purity SiC was developed, and extended defects in SiC epitaxial layers were systematically characterized. Physical properties of the major deep levels were elucidated. The carrier-lifetime killer defects could be eliminated, leading to remarkably enhanced carrier lifetimes. Control of carrier lifetimes was also achieved. Original junction-termination structures were proposed to achieve ultrahigh blocking voltage with SiC, and breakdown mechanism of SiC devices was discussed. By utilizing thick, lightly-doped SiC epitaxial layers and the original device structures, ultrahigh-voltage (> 20 kV) PiN diodes and npn bipolar transistors were realized. The performance was significantly improved by enhancement of carrier lifetimes, and high-temperature operation of SiC devices was demonstrated.