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Development of devices and systems toward realization of high-capacity wireless communications by terahertz waves

Research Project

Project/Area Number 21226010
Research Category

Grant-in-Aid for Scientific Research (S)

Allocation TypeSingle-year Grants
Research Field Electron device/Electronic equipment
Research InstitutionTokyo Institute of Technology

Principal Investigator

ASADA Masahiro  東京工業大学, 総合理工学研究科(研究院), 教授 (30167887)

Co-Investigator(Kenkyū-buntansha) MIYAMOTO Yasuyuki  東京工業大学, 大学院理工学研究科, 教授 (40209953)
NISHIYAMA Nobuhiko  東京工業大学, 大学院理工学研究科, 准教授 (80447531)
Co-Investigator(Renkei-kenkyūsha) SUZUKI Safumi  東京工業大学, 大学院理工学研究科, 准教授 (40550471)
Project Period (FY) 2009-05-11 – 2014-03-31
Project Status Completed (Fiscal Year 2013)
Budget Amount *help
¥213,330,000 (Direct Cost: ¥164,100,000、Indirect Cost: ¥49,230,000)
Fiscal Year 2013: ¥24,960,000 (Direct Cost: ¥19,200,000、Indirect Cost: ¥5,760,000)
Fiscal Year 2012: ¥36,920,000 (Direct Cost: ¥28,400,000、Indirect Cost: ¥8,520,000)
Fiscal Year 2011: ¥58,240,000 (Direct Cost: ¥44,800,000、Indirect Cost: ¥13,440,000)
Fiscal Year 2010: ¥43,680,000 (Direct Cost: ¥33,600,000、Indirect Cost: ¥10,080,000)
Fiscal Year 2009: ¥49,530,000 (Direct Cost: ¥38,100,000、Indirect Cost: ¥11,430,000)
Keywords電子デバイス・集積回路 / テラヘルツデバイス / 大容量無線通信 / 共鳴トンネルダイオード / 微細スロットアンテナ / テラヘルツ波の変調 / テラヘルツ波 / テラヘルツ発振デバイス / 集積スロットアンテナ / 室温テラヘルツ発振 / 直接変調 / 周波数変調
Research Abstract

Toward realization of high-capacity wireless communications in the undeveloped terahertz frequency region, we investigated oscillation and modulation of terahertz waves, and wireless data transmission. For the oscillation device, we achieved room-temperature oscillation at 1.55 THz using resonant tunneling diodes with reduced electron delay, which is the highest frequency of semiconductor electron devices. High-power oscillation and high-speed direct modulation of these oscillators were achieved with the structure optimization of the integrated micro-antennas. Modulators for terahertz waves with optical signal and transistors with high current drivability for modulation were also obtained. Wireless data transmission was demonstrated with the resonant- tunneling-diode transmitter and Schottky-barrier-diode receiver, and feasibility of high-capacity communication was obtained.

Assessment Rating
Verification Result (Rating)

A

Report

(7 results)
  • 2014 Research Progress Assessment (Verification Result) ( PDF )
  • 2013 Annual Research Report   Final Research Report ( PDF )
  • 2012 Annual Research Report
  • 2011 Annual Research Report
  • 2010 Annual Research Report
  • 2009 Annual Research Report
  • Research Products

    (471 results)

All 2014 2013 2012 2011 2010 2009 Other

All Journal Article (75 results) (of which Peer Reviewed: 71 results) Presentation (369 results) (of which Invited: 15 results) Book (5 results) Remarks (16 results) Patent(Industrial Property Rights) (6 results)

  • [Journal Article] Fundamental oscillation up to 1.42 THz in resonant tunneling diodes by optimized collector spacer thickness2014

    • Author(s)
      H. Kanaya, R. Sogabe, T. Maekawa, S. Suzuki, and M. Asada
    • Journal Title

      J. Infrared, Millimeter and Terahertz Waves

      Volume: vol.35 Issue: 5 Pages: 425-431

    • DOI

      10.1007/s10762-014-0058-z

    • NAID

      110009902736

    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Wide-Range Varactor-Tuned Terahertz Oscillator Using Resonant Tunneling Diode2014

    • Author(s)
      S. Kitagawa, S. Suzuki, and M. Asada
    • Journal Title

      J. Infrared, Millimeter and Terahertz Waves

      Volume: 35 Issue: 5 Pages: 445-450

    • DOI

      10.1007/s10762-014-0061-4

    • NAID

      110009902737

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Structural and electrical transport properties of MOVPE-grown pseudomorphic AlAs/InGaAs/InAs resonant tunneling diodes on InP substrates2014

    • Author(s)
      H. Sugiyama, A. Teranishi, S. Suzuki, and M. Asada
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 53 Issue: 3 Pages: 31202-31202

    • DOI

      10.7567/jjap.53.031202

    • NAID

      210000143405

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] High-power operation of terahertz oscillators with resonant tunneling diodes using impedancematched antennas and array configuration2013

    • Author(s)
      S. Suzuki, M. Shiraishi, H. Shibayama, and M. Asada
    • Journal Title

      IEEE J. Selected Topics Quantum Electron

      Volume: vol.19, No.1 Issue: 1 Pages: 8500108-8500108

    • DOI

      10.1109/jstqe.2012.2215017

    • Related Report
      2013 Annual Research Report 2013 Final Research Report 2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] High open-circuit voltage gain in vertical InGaAs channel metal-insulator semiconductor field effect transistor using heavily doped drain region and narrow channel mesa2013

    • Author(s)
      M. Kashiwano, J. Hirai, S. Ikeda, M. Fujimatsu, and Y. Miyamoto
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: vol.52 Issue: 4S Pages: 04CF05-04CF05

    • DOI

      10.7567/jjap.52.04cf05

    • NAID

      110009569440

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Terahertz oscillation of resonant tunneling diodes with deep and thin quantum wells2013

    • Author(s)
      H. Kanaya, S. Suzuki, and M. Asada
    • Journal Title

      IEICE Electronics Express

      Volume: 10 Issue: 18 Pages: 20130501-20130501

    • DOI

      10.1587/elex.10.20130501

    • NAID

      130003365037

    • ISSN
      1349-2543
    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Terahertz Emission from Resonant Tunneling Diodes without Satisfying Oscillation Condition2013

    • Author(s)
      M. Asada, H. Kanaya, and S. Suzuki
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 52 Issue: 10R Pages: 100210-100210

    • DOI

      10.7567/jjap.52.100210

    • NAID

      40022765769

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Performance Evaluation of InGaSb/AlSb P-Channel High-Hole-Mobility Transistor Faricated Using BCl3 Dry Etching2013

    • Author(s)
      C.-H. Yu
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: vol. 52, no. 2 Issue: 2R Pages: 20203-20203

    • DOI

      10.7567/jjap.52.020203

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications2013

    • Author(s)
      F. Fatah
    • Journal Title

      Appl. Phys. Express

      Volume: vol. 6, no. 3 Issue: 3 Pages: 34001-34001

    • DOI

      10.7567/apex.6.034001

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Direct intensity modulation and wireless data transmission characteristics of terahertz-oscillating resonant tunnelling diodes2012

    • Author(s)
      K. Ishigaki, M. Shiraishi, S. Suzuki, M. Asada, N. Nishiyama, and S. Arai
    • Journal Title

      Electron. Lett

      Volume: vol.48, No.10 Issue: 10 Pages: 582-583

    • DOI

      10.1049/el.2012.0849

    • Related Report
      2013 Final Research Report 2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Dependence of Output Power on Slot Antenna Width in Terahertz Oscillating Resonant Tunneling Diodes2012

    • Author(s)
      H. Shibayama
    • Journal Title

      J. Infrared Milli. Terahz. Waves

      Volume: vol. 33 Issue: 5 Pages: 475-478

    • DOI

      10.1007/s10762-012-9893-y

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Terahertz Oscillation of Resonant Tunneling Diode and Modulation of Its Output Power with Laser Irradiation2012

    • Author(s)
      S. Suzuki
    • Journal Title

      Rev. Laser Eng. (レーザー研究)

      Volume: vol. 40, no. 7 Pages: 517-522

    • NAID

      10030769450

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Fundamental Oscillation up to 1.31 THz in Resonant Tunneling Diodes with Thin Well and Barriers2012

    • Author(s)
      H. Kanaya
    • Journal Title

      Appl. Phys. Express

      Volume: vol. 5 Issue: 12 Pages: 124101-124101

    • DOI

      10.1143/apex.5.124101

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Low-loss GaInAsP wire waveguide on Si substrate with Benzocyclobutene adhesive wafer bonding for membrane photonic circuits2012

    • Author(s)
      J. Lee, Y. Maeda, Y Atsumi, Y. Takino, N. Nishiyama, S. Arai
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: Vol. 51 Issue: 4R Pages: 042201-042201

    • DOI

      10.1143/jjap.51.042201

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Carrier-Transport-Limited Modulation Bandwidth in Distributed Reflector Lasers with Wirelike Active Regions2012

    • Author(s)
      D. Takahashi, S. Lee, M. Shirao, T. Shindo, K. Shinno, T. Amemiya, N. Nishiyama, S. Arai
    • Journal Title

      IEEE J, Quantum Electron.

      Volume: Vol. 48 Issue: 5 Pages: 688-695

    • DOI

      10.1109/jqe.2012.2190822

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] GalnAsP/InP Lateral Current Injection Laser with Uniformly Distributed Quantum Well Structure2012

    • Author(s)
      M. Futami, T. Shindo, T. Koguchi, K. Shinno, T. Amemiya, N. Nishiyama, S. Arai
    • Journal Title

      IEEE Photon. Technol. Lett.

      Volume: Vol. 24 Issue: 11 Pages: 888-890

    • DOI

      10.1109/lpt.2012.2190053

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Permeability retrieval in InP-based waveguide optical device combined with metamateria2012

    • Author(s)
      T. Amemiya, S. Myoga, T. Shindo, E. Murai, N. Nishiyama, S. Arai
    • Journal Title

      Optics Lett.

      Volume: Vol. 37 Issue: 12 Pages: 2301-2303

    • DOI

      10.1364/ol.37.002301

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Improved regrowth interface of AlGaInAs/InP-buried-heterostructure lasers by in-situ thermal cleaning2012

    • Author(s)
      Y. Takino
    • Journal Title

      IEEE J. Quantum Electron.

      Volume: Vol. 48 Issue: 8 Pages: 971-979

    • DOI

      10.1109/jqe.2012.2196410

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Carrier-concentration-dependent resonance frequency shift in a metamaterial loaded semiconductor2012

    • Author(s)
      S. Myoga
    • Journal Title

      J. Opt. Soc. Amer. B

      Volume: Vol. 29 Issue: 8 Pages: 2110-2115

    • DOI

      10.1364/josab.29.002110

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Layer-to-Layer Grating Coupler Based on Hydrogenated Amorphous Silicon for Three-Dimensional Optical Circuits2012

    • Author(s)
      J. H. Rang, Y. Atsumi, M. Oda, T. Amemiya, N. Nishiyama, S. Arai
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 51 Issue: 12R Pages: 120203-120203

    • DOI

      10.1143/jjap.51.120203

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Theoretical analysis of the damping effect on a transistor laser2012

    • Author(s)
      M. Shirao
    • Journal Title

      IEICE Electronics Express

      Volume: 9 Issue: 23 Pages: 1792-1798

    • DOI

      10.1587/elex.9.1792

    • NAID

      130002542191

    • ISSN
      1349-2543
    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Reduction of Base-Collector Capacitance in InP/InGaAs DHBT with Buried SiO<sub>2</sub> Wires2012

    • Author(s)
      N. Takebe
    • Journal Title

      IEICE Transactions on Electronics

      Volume: E95.C Issue: 5 Pages: 917-920

    • DOI

      10.1587/transele.E95.C.917

    • NAID

      130002135544

    • ISSN
      0916-8524, 1745-1353
    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Bias-Dependent Radio Frequency Performance for 40 nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600 GHz2012

    • Author(s)
      F. Fatah
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: vol. 51, no. 11 Issue: 11R Pages: 110203-110203

    • DOI

      10.1143/jjap.51.110203

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Estimation of Transit Time in Terahertz Oscillating Resonant Tunneling Diodes with Graded Emitter and Thin Barriers2012

    • Author(s)
      A.Teranishi, S.Suzuki, K.Shizuno, M.Asada, H.Sugiyama, H.Yokoyama
    • Journal Title

      IEICE Transactions on Electronics

      Volume: E95-C Issue: 3 Pages: 401-407

    • DOI

      10.1587/transele.E95.C.401

    • NAID

      10030610433

    • ISSN
      0916-8524, 1745-1353
    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Fundamental oscillation up to 1.08THz in resonant tunneling diodes with high-indium-composition transit layers for reduction of transit delay2012

    • Author(s)
      A.Teranishi, K.Shizuno, S.Suzuki, M.Asada, H.Sugiyama, H. Yokoyama
    • Journal Title

      IEICE Electronics Express

      Volume: 9 Issue: 5 Pages: 385-390

    • DOI

      10.1587/elex.9.385

    • NAID

      130001922359

    • ISSN
      1349-2543
    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Reduction of Output Conductance in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field Effect Transistor Using Heavily Doped Drain Region2012

    • Author(s)
      H.Saito, Y.Miyamoto
    • Journal Title

      Appl.Phys.Express

      Volume: vol.5 Issue: 2 Pages: 024101-024101

    • DOI

      10.1143/apex.5.024101

    • NAID

      10030155693

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Athermal Wavelength Filters toward Optical Interconnection to LSIs2012

    • Author(s)
      Y.Atsumi, M.Oda, J.H.Kang, N.Nishiyama, S.Arai
    • Journal Title

      IEICE Transactions on Electronics

      Volume: E95-C Issue: 2 Pages: 229-236

    • DOI

      10.1587/transele.E95.C.229

    • NAID

      10030609915

    • ISSN
      0916-8524, 1745-1353
    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] High Output Power (~400μW)Oscillators at around 550GHZ Using Resonant Tunneling Diodes with Graded Emitter and Thin Barriers2011

    • Author(s)
      M.Shiraishi, H.Shibayama, K.Ishigaki, S.Suzuki, M.Asada, H.Sugiyama, H.Yokoyama
    • Journal Title

      Appl.Phys.Express

      Volume: vol.4 Issue: 6 Pages: 64101-64101

    • DOI

      10.1143/apex.4.064101

    • NAID

      10029000452

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Terahertz oscillators using electron devices - an approach with Resonant tunneling diodes2011

    • Author(s)
      M.Asada, S.Suzuki
    • Journal Title

      IEICE Electronics Express

      Volume: 8 Issue: 14 Pages: 1110-1126

    • DOI

      10.1587/elex.8.1110

    • NAID

      130000959497

    • ISSN
      1349-2543
    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Heterodyne Mixing of Sub-Terahertz Output Power from Two Resonant Tunneling Diodes Using InP Schottky BarrierDiode2011

    • Author(s)
      S.Suzuki, K.Karashima, K.Ishigaki, M.Asada
    • Journal Title

      Jpn.J.Appl.Phys.

      Volume: vol.50 Issue: 8R Pages: 80211-80211

    • DOI

      10.1143/jjap.50.080211

    • NAID

      40018960973

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] High Uniformity InP-Based Resonant Tunneling Diode Wafers with Peak Current Density of over 6×10^5 A/cm^2 Grown by Metal-Organic Vapor-Phase Epitaxy2011

    • Author(s)
      H.Sugiyama, A.Teranishi, S.Suzuki, M.Asada
    • Journal Title

      J.Crystal Growth

      Volume: Vol.336 Issue: 1 Pages: 24-28

    • DOI

      10.1016/j.jcrysgro.2011.09.010

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] 電子デバイスによるテラヘルツ光源2011

    • Author(s)
      浅田雅洋、鈴木左文
    • Journal Title

      電気学会論文誌A(基礎・材料共通)

      Volume: vol.131-A Pages: 21-25

    • Related Report
      2011 Annual Research Report 2010 Annual Research Report
  • [Journal Article] 高精度結晶成長技術による共鳴トンネルダイオードテラヘルツ発振器の実現2011

    • Author(s)
      杉山弘樹, 鈴木左文, 浅田雅洋
    • Journal Title

      NTT技術ジャーナル

      Volume: vol.23 Pages: 12-17

    • Related Report
      2011 Annual Research Report
  • [Journal Article] Deviation from Proportional Relationship between Emitter Charging Time and Inverse Current of Heterojunction Bipolar Transistors Operationg at High Current Dentity2011

    • Author(s)
      M.Yamada, T.Uesawa, Y.Miyamoto, K. Furuya
    • Journal Title

      IEEE Electron Device Lett

      Volume: vol.32 Issue: 4 Pages: 491-493

    • DOI

      10.1109/led.2011.2107497

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] InP/InGaAs Composite MOSFETs with Regrown Source andAl_2O_3gate dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/μm2011

    • Author(s)
      R.Terao, T.Kanazawa, S.Ikeda, Y.Yonai, A.Kato, Y.Miyamoto
    • Journal Title

      Appl.Phys.Express

      Volume: vol.4 Issue: 5 Pages: 054201-054201

    • DOI

      10.1143/apex.4.054201

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Fabrication of InP/InGaAs DHBTs with Buried SiO2 Wires2011

    • Author(s)
      N.Takebe, T.Kobayashi, H.Suzuki, Y.Miyamoto, K.Furuya
    • Journal Title

      IEICE Transactions on Electronics

      Volume: E94-C Issue: 5 Pages: 830-834

    • DOI

      10.1587/transele.E94.C.830

    • NAID

      10029506179

    • ISSN
      0916-8524, 1745-1353
    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Magnetic Interactions at Optical Frequencies in an InP-Based Wavegui de Device with Metamaterial2011

    • Author(s)
      T.Amemiya, T.Shindo, D.Takahashi, N.Nishiyama, S.Arai
    • Journal Title

      IEEE J.Quantum Electronics

      Volume: 47 Issue: 5 Pages: 736-744

    • DOI

      10.1109/jqe.2011.2108268

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Room-Temperature Continuous-Wave Operation of 1.3-μm Transistor Laser with AlGaInAs/InP Quantum Wells2011

    • Author(s)
      M.Shirao, T.Sato, Y.Takino, N.Sato, N.Nishiyama, S.Arai
    • Journal Title

      Appl.Phys.Express

      Volume: Vol.4 Issue: 4 Pages: 3975-3982

    • DOI

      10.1364/oe.20.003983

    • NAID

      10029239379

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Nonunity permeability in metamaterial-based GaInAsP/InP multimode interferometers2011

    • Author(s)
      T.Amemiya, T.Shindo, D.Takahashi, S.Myoga, N.Nishiyama, S.Arai
    • Journal Title

      Optics Lett.

      Volume: 36 Issue: 12 Pages: 2327-2329

    • DOI

      10.1364/ol.36.002327

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Regrowth Interface Quality Dependence on Thermal Cleaning of AlGaInAs/InP Buried-Heterostructure Lasers2011

    • Author(s)
      瀧野祐太
    • Journal Title

      Jpn.J.Appl.Phys.

      Volume: 50 Issue: 7R Pages: 070203-070203

    • DOI

      10.1143/jjap.50.070203

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Low-power-consumption High-eye-margin 10 Gbit/s Operation by GaInAsP/InP Distributed Reflector Lasers with Wirelike Active Regions2011

    • Author(s)
      S.Lee, D.Takahashi, T.Shindo, K.Shinno, T.Amemiya, N.Nishiyama, S.Arai
    • Journal Title

      IEEE Photonics Technol.Lett.

      Volume: 23 Issue: 18 Pages: 1349-1351

    • DOI

      10.1109/lpt.2011.2160938

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Bonding and Photoluminescence Characteristics of GaInAsP/InP Membrane Structure on Silicon-on-Insulator Waveguides by Surface Activated Bonding2011

    • Author(s)
      R.Osabe, T.Okumura, S.Kondo, N.Nishiyama, S.Arai
    • Journal Title

      Jpn.J.Appl.Phys

      Volume: Vol.50 Issue: 8R Pages: 88005-88005

    • DOI

      10.1143/jjap.50.088005

    • NAID

      210000139428

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Lateral-Current-Injection Distributed Feedback Laser with Surface Grating Structure2011

    • Author(s)
      T.Shindo, T.Okumura, H.Ito, T.Koguchi, D.Takahashi, Y.Atsumi, J.Kang, R.Osabe, T Amemiya, N.Nishiyama, S.Arai
    • Journal Title

      IEEE J.Sel.Top.Quantum Electron.

      Volume: 17 Issue: 5 Pages: 1175-1182

    • DOI

      10.1109/jstqe.2011.2131636

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Low-loss Amorphous Silicon Multilayer Waveguides Vertically Stacked on Silicon-on-Insulator Substrate2011

    • Author(s)
      J.H.Kang, Y.Atsumi, M.Oda, T.Amemiya, N.Nishiyama, S.Arai
    • Journal Title

      Jpn.J.Appl.Phys.

      Volume: Vol.50 Issue: 12R Pages: 120208-120208

    • DOI

      10.1143/jjap.50.120208

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] GaInAsP/Inp Lateral-Current-Injection Distributed Feedback Laser with a-Si Surface Grating2011

    • Author(s)
      T.Shindo, T.Okumura, H.Ito, T.Koguchi, D.Takahashi, Y.Atsumi, J.Kang, R.Osabe, T.Amemiya, N.Nishiyama, S.Arai
    • Journal Title

      Opt.Express

      Volume: vol.19 Pages: 1884-1891

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Lateral Junction Waveguide-type Photodiode Grown on Semi-insulating InP Substrate2011

    • Author(s)
      T.Okumura.D.Kondo, H.Ito, S.H.Lee, T.Amemiya, N.Nishiyama, S.Arai
    • Journal Title

      Jpn.J.Appl.Phys.

      Volume: vol.50

    • NAID

      40018283282

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Large-Signal Analysis of a Transistor Laser2011

    • Author(s)
      M.Shirao, S.Lee, N.Nishiyama, S.Arai
    • Journal Title

      IEEE J.Quantum Electron.

      Volume: vol.47 Pages: 359-367

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Vertical InGaAs Channel Metal-Insulator-Semiconductor Field Effect Transistor with High Current Density2011

    • Author(s)
      H.Saito, Y.Matsumoto, Y.Miyamoto, K.Furuya
    • Journal Title

      Jpn.J.Appl.Phys.

      Volume: vol.50

    • NAID

      40017446831

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Deviation From Proportional Relationship Between Emitter Charging Time and Inverse Current of Heterojunction Bipolar Transistors Operating at High Current Density2011

    • Author(s)
      M.Yamada, T.Uesawa, Y.Miyamoto, K.Furuya
    • Journal Title

      IEEE Electron Device Lett.

      Volume: vol.32 Pages: 491-493

    • NAID

      110007999989

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] シリコン/III-V族半導体ハイブリッド集積光デバイス2011

    • Author(s)
      西山伸彦
    • Journal Title

      月刊OPTRONICS

      Volume: 2011年2月号 Pages: 117-120

    • Related Report
      2010 Annual Research Report
  • [Journal Article] Continuous Wave Operation of Thin Film Lateral Current Injection Lasers Grown on Semi-Insulating InP Substrate2010

    • Author(s)
      T.Okumura, H.Ito, D.Kondo, N.Nisiyama, S.Arai
    • Journal Title

      Jpn.J.Appl.Phys.

      Volume: vol.49

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Athermal Wavelength Characteristics of Si Slot Ring Resonator Embedded with Benzocyclobutene for Optoelectronic Integrated Circuits2010

    • Author(s)
      Y.Atsumi, K.Inoue, N.Nishiyama, S.Arai
    • Journal Title

      Jpn.J.Appl.Phys.

      Volume: vol.49

    • NAID

      40017116072

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Bandwidth enhancement of injection-locked distributed reflector lasers with wirelike active regions2010

    • Author(s)
      S.H.Lee, D.Parekh, T.Shindo, W.Yang, P.Guo, D.Takahashi, N.Nishiyama, C.J.Chang-Hasnain, S.Arai
    • Journal Title

      Opt.Express

      Volume: vol.18 Pages: 16370-16378

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Extremely High Peak Current Densities of over 1×10^6A/cm^2 in InP-Based InGaAs/AlAs Resonant Tunneling Diodes Grown by Metal-Organic Vapor-Phase Epitaxy2010

    • Author(s)
      H.Sugiyama, H.Yokoyama, A.Teranishi, S.Suzuki, M.Asada
    • Journal Title

      Jpn.J.Appl.Phys.

      Volume: vol.49

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Estimation of Collector Current Spreading in InGaAs SHBT Having 75-nm-Thick Collector2010

    • Author(s)
      Y.Miyamoto, S.Takahashi, T.Kobayashi, H.Suzuzki, K.Furuya
    • Journal Title

      IEICE Trans.Electron.

      Volume: vol.E93-C Pages: 644-647

    • NAID

      10026825631

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Fundamental oscillations at~900GHz with low bias voltages in RTDs with spike-doped structures2010

    • Author(s)
      S.Suzuki, K.Sawada, A.Teranishi, M.Asada, H.Sugiyama, H.Yokoyama
    • Journal Title

      Electron.Lett.

      Volume: vol.46 Pages: 1006-1007

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Fabrication of Vertical InGaAs Channel Metal-Insulator-Semiconductor Field Effect Transistor with a 15-nm-wide Mesa Structure and a Drain Current Density of 7 MA/cm^22010

    • Author(s)
      H.Saito, Y.Miyamoto, K.Furuya
    • Journal Title

      Appl.Phys.Express

      Volume: vol.3

    • NAID

      10026586520

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Theoretical analysis of spectral linewidth of terahertz oscillators using resonant tunneling diodes and their coupled arrays2010

    • Author(s)
      M.Asada
    • Journal Title

      J.Appl.Phys.

      Volume: vol.108

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Submicron InP/InGaAs Composite-Channel Metal-Oxide-Semiconductor Field-Effect Transistor with Selectively Regrown n^+-Source2010

    • Author(s)
      T.Kanazawa, K.Wakabayashi, H.Saito, R.Terao, S.Ikeda, Y.Miyamoto, K.Furuya
    • Journal Title

      Appl.Phys.Express

      Volume: vol.3

    • NAID

      10026690574

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] 極微細ヘテロ接合トランジスタ2010

    • Author(s)
      宮本恭幸
    • Journal Title

      応用物理

      Volume: 第79巻 Pages: 1010-1013

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature2010

    • Author(s)
      S.Suzuki, M.Asada, A.Teranishi, H.Sugiyama, H.Yokoyama
    • Journal Title

      Appl.Phys.Lett.

      Volume: vol.97

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Sub-Terahertz Resonant Tunneling Diode Oscillators with High Output Power(~200μW)Using Offset-Fed Slot Antenna and High Current Density2010

    • Author(s)
      K.Hinata
    • Journal Title

      Appl.Phys.Exp. vol.3

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Measurement of Oscillation Frequency and Spectral Linewidth of Sub-Terahertz InP-Based Resonant Tunneling Diode Oscillators Using Ni-InP Schottky Barrier Diode2010

    • Author(s)
      K.Karashima
    • Journal Title

      Jpn.J.Appl.Phys. Vol.49

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Fundamental Oscillation of up to 951GHz in Small-Area InGaAs/AlAs Resonant Tunneling Diodes with Planar Slot Antennas2010

    • Author(s)
      M.Shiraishi
    • Journal Title

      Jpn.J.Appl.Phys. vol.49

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Monte Carlo Analysis of Base Transit Times of InP/GaInAs Heterojunction Bipolar Transistors with Ultrathin Graded Bases2010

    • Author(s)
      T.Uesawa
    • Journal Title

      Jpn.J.Appl.Phys. vol.49

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Preliminary experiment for direct media conversion to sub-terahertz wave signal from 1.55-μm optical signal using photon-generated free carriers2009

    • Author(s)
      M. Shirao, Y. Numajiri, R. Yokoyama, N. Nishiyama, M. Asada, and S. Arai
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: vol.48, No.9 Issue: 9 Pages: 090203-090203

    • DOI

      10.1143/jjap.48.090203

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Fundamental Oscillation of up to 831GHz in GaInAs/AlAs Resonant Tunneling Diode2009

    • Author(s)
      S.Suzuki
    • Journal Title

      Appl.Phys.Exp. vol.2

    • NAID

      10025086139

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Analysis of Terahertz Oscillator Using Negative Differential Resistance Dual-Channel Transistor and Integrated Antenna2009

    • Author(s)
      K.Furuya
    • Journal Title

      Jpn.J.Appl.Phys. vol.48

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Terahertz Sources Using Electron Devices2009

    • Author(s)
      M.Asada
    • Journal Title

      KEC JOHO No.209

      Pages: 17-22

    • Related Report
      2009 Annual Research Report
  • [Journal Article] Lateral Current Injection GaInAsP/InP Laser on Semi-insulating Substrate for Membrane-based Photonic Circuits2009

    • Author(s)
      T.Okumura
    • Journal Title

      Opt.Express Vol.17

      Pages: 12564-12570

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Low-Threshold and High-Efficiency Operation of Distributed Reflector Laser With Wirelike Active Regions2009

    • Author(s)
      T.Shindo
    • Journal Title

      IEEE Photon.Technol.Lett. Vol.21

      Pages: 1414-1416

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] High Optical-Feedback Tolerance of Distributed Reflector Lasers with Wirelike Active Regions for Isolator-Free Operation2009

    • Author(s)
      S.Lee
    • Journal Title

      IEEE Photon.Technol.Lett. Vol.21

      Pages: 1529-1531

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Preliminary Experiment for Direct Media Conversion to Sub-Terahertz Wave Signal from 1.55-μm Optical Signal Using Photon-generated Free Carriers2009

    • Author(s)
      M.Shirao
    • Journal Title

      Jpn.J.Appl.Phys. Vol.48

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance and High Voltage Gain2009

    • Author(s)
      Hisashi Saito
    • Journal Title

      Appl.Phys.Exp. vol.2

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Sub- Terahertz resonant Tunneling Diode Osillators Integrated with Tapered Slot Antennas for Horizontal Radiation2009

    • Author(s)
      K.Urayama
    • Journal Title

      Appl.Phys.Exp. vol.2

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Presentation] Room-Temperature Resonant-Tunneling-Diode Terahertz Oscillator2014

    • Author(s)
      S. Suzuki and M. Asada
    • Organizer
      Int. Conf. Solid State Device and Materials (SSDM2014)
    • Place of Presentation
      つくば
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Resonant-Tunneling-Diode Terahertz Oscillator Integrated with Slot-Coupled Patch Antenna2014

    • Author(s)
      K. Okada, S. Suzuki, and M. Asada
    • Organizer
      Int. Conf. Indium Phosphide and Related Materials (IPRM2014)
    • Place of Presentation
      Montpellier (France)
    • Related Report
      2013 Annual Research Report
  • [Presentation] Frequency Increase in Resonant Tunneling-Diode Terahertz Oscillators Using Optimum Collector Spacer2014

    • Author(s)
      H. Kanaya, R. Sogabe, T. Maekawa, S. Suzuki, and M. Asada
    • Organizer
      Int. Conf. Indium Phosphide and Related Materials (IPRM2014)
    • Place of Presentation
      Montpellier (France)
    • Related Report
      2013 Annual Research Report
  • [Presentation] Oscillation of Resonant Tunneling Diode up to 1.55 THz by Optimized Slot Antenna Length2014

    • Author(s)
      T. Maekawa, H. Kanaya, R. Sogabe, S. Suzuki, and M. Asada
    • Organizer
      European Optical Society, THz Science and Tech. (EOS-TST)
    • Place of Presentation
      Camogli (Italy)
    • Related Report
      2013 Annual Research Report
  • [Presentation] Varactor-Tuned Resonant-Tunneling- Diode Terahertz Oscillator2014

    • Author(s)
      S. Kitagawa, S. Suzuki, and M. Asada
    • Organizer
      European Optical Society, THz Science and Tech. (EOS-TST)
    • Place of Presentation
      Camogli (Italy)
    • Related Report
      2013 Annual Research Report
  • [Presentation] Heavily doped epitaxially grown source in InGaAs MOSFET for high drain current density2013

    • Author(s)
      Y. Miyamoto, T. Kanazawa, Y. Yonai, A. Kato, K. Ohsawa, M. Oda, T. Irisawa, and T. Tezuka
    • Organizer
      IEEE Semiconductor Interface Specialists Conf.(SICS 2013)
    • Place of Presentation
      Arlington, VA
    • Year and Date
      2013-12-10
    • Related Report
      2013 Final Research Report
  • [Presentation] Roomtemperature THz oscillators using resonant tunneling diodes2013

    • Author(s)
      M. Asada and S. Suzuki
    • Organizer
      Int. Workshop. Optical THz Science and Tech. (OTST 2013)
    • Place of Presentation
      Kyoto, Apr
    • Year and Date
      2013-04-02
    • Related Report
      2013 Final Research Report
  • [Presentation] Roomtemperature THz oscillators using resonant tunneling diodes with reduced delay times2012

    • Author(s)
      M. Asada and S. Suzuki
    • Organizer
      Int. Symp. Frontier THz Tech. (FTT 2012)
    • Place of Presentation
      Nara
    • Year and Date
      2012-11-28
    • Related Report
      2013 Final Research Report
  • [Presentation] Compact optical/THz signal converter using photo-generated carrier gate in THz waveguide2012

    • Author(s)
      D. Take, M. Shirao, K. Maruyama, N. Nishiyama, M. Asada, and S. Arai
    • Organizer
      IEEE Photonics Conference (IPC 12)
    • Place of Presentation
      Burlingame (USA)
    • Year and Date
      2012-09-24
    • Related Report
      2013 Final Research Report
  • [Presentation] Increase of Output Power Using Thin Well Resonant Tunneling Diodes2012

    • Author(s)
      H.Kanaya
    • Organizer
      The 59th Spring Meeting, The Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Tokyo
    • Year and Date
      2012-05-17
    • Related Report
      2011 Annual Research Report
  • [Presentation] Increaseoi Cut-off Frequency and Responsivity Measurement of Ni-InP Schottky Barrier Diode Integrated with a Bow-Tie Antenna2012

    • Author(s)
      K.Maruyama
    • Organizer
      The 59th Spring Meeting, The Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Tokyo
    • Year and Date
      2012-05-17
    • Related Report
      2011 Annual Research Report
  • [Presentation] High current density of InGaAs MOSFET by epitaxially grown source2012

    • Author(s)
      Y.Miyamoto
    • Organizer
      Technical meeting on Electron Devices IEE of Japan
    • Place of Presentation
      Atami
    • Year and Date
      2012-05-08
    • Related Report
      2011 Annual Research Report
  • [Presentation] 金属側壁層有するInP系プラズモニック導波路の作製評価,電気情報通信学会2012

    • Author(s)
      村井英淳
    • Organizer
      The 2012 IEICE General conf.
    • Place of Presentation
      Okayama
    • Year and Date
      2012-03-23
    • Related Report
      2011 Annual Research Report
  • [Presentation] 多層アモルファスシリコン細線導波路間の信号伝送用グレーティングカプラ2012

    • Author(s)
      姜〓〓
    • Organizer
      The 2012 IEICE General conf.
    • Place of Presentation
      Okayama
    • Year and Date
      2012-03-22
    • Related Report
      2011 Annual Research Report
  • [Presentation] 温度無依存B埋め込みSiスロットリング共振器を用いたドロップフィルタ2012

    • Author(s)
      小田学
    • Organizer
      The 2012 IEICE General conf.
    • Place of Presentation
      Okayama
    • Year and Date
      2012-03-22
    • Related Report
      2011 Annual Research Report
  • [Presentation] 横方向電流注入型半導体薄膜レーザの直接変調帯域の検討2012

    • Author(s)
      進藤隆彦
    • Organizer
      The 2012 IEICE General conf.
    • Place of Presentation
      Okayama
    • Year and Date
      2012-03-21
    • Related Report
      2011 Annual Research Report
  • [Presentation] ブロッホ波干渉型低損失連結クロス導波路の作製評価2012

    • Author(s)
      渥美裕樹
    • Organizer
      The 59th spring Meeting, The Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Tokyo
    • Year and Date
      2012-03-18
    • Related Report
      2011 Annual Research Report
  • [Presentation] InPエッチング異方性による微細InGaAsチャネルMOSFET2012

    • Author(s)
      米内義晴
    • Organizer
      The 59th Spring Meeting, The Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Tokyo
    • Year and Date
      2012-03-17
    • Related Report
      2011 Annual Research Report
  • [Presentation] BCB貼り付け法によるSi基板上GaInAsP細線1×2MMIの作製2012

    • Author(s)
      李智恩
    • Organizer
      The 59th spring Meeting, The Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Tokyo
    • Year and Date
      2012-03-17
    • Related Report
      2011 Annual Research Report
  • [Presentation] チップ内光配線に向けた横接合導波路型GaInAsフォトダイオードの10Gb/s動作2012

    • Author(s)
      小口貴之
    • Organizer
      The 59th spring Meeting, The Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Tokyo
    • Year and Date
      2012-03-17
    • Related Report
      2011 Annual Research Report
  • [Presentation] 1.3μm帯npn-AlGaInAs/InPトランジスタレーザの室温連続動作2012

    • Author(s)
      佐藤孝司
    • Organizer
      The 59th spring Meeting, The Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Tokyo
    • Year and Date
      2012-03-16
    • Related Report
      2011 Annual Research Report
  • [Presentation] GaInAs/InP半導体上メタマテリアルにおける共振波長変化の金属膜厚依存性2012

    • Author(s)
      明賀聖慈
    • Organizer
      The 59th spring Meeting, The Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Tokyo
    • Year and Date
      2012-03-16
    • Related Report
      2011 Annual Research Report
  • [Presentation] 横方向電流注入型レーザの内部量子効率向上2012

    • Author(s)
      信野圭祐
    • Organizer
      The 59th spring Meeting, The Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Tokyo
    • Year and Date
      2012-03-16
    • Related Report
      2011 Annual Research Report
  • [Presentation] Design of Optical-THz Signal Converter Integratable with aTHz Oscillator2012

    • Author(s)
      D.Take
    • Organizer
      The 59th Spring Meeting, The Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Tokyo
    • Year and Date
      2012-03-15
    • Related Report
      2011 Annual Research Report
  • [Presentation] Room-Temperature Terahertz Sources Using Resonant Tunneling Diodes2012

    • Author(s)
      M.Asada
    • Organizer
      IEE Technical Meeting, High Power Semiconductor Sources and Their Applications
    • Place of Presentation
      Tokyo(招待講演)
    • Year and Date
      2012-02-20
    • Related Report
      2011 Annual Research Report
  • [Presentation] IHz Osculation of Resonant Tunneling Diode and Its Basic Properties for Wireless Transmission2012

    • Author(s)
      M.Asada
    • Organizer
      IEICE Terahertz Application System Meeting
    • Place of Presentation
      Tokyo(招待講演)
    • Year and Date
      2012-02-10
    • Related Report
      2011 Annual Research Report
  • [Presentation] Simulation study and reduction of reverse gate leakage current for GaN HEMTs2012

    • Author(s)
      Y. Yamaguchi
    • Organizer
      2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
    • Place of Presentation
      ラヨラ(カリフォルニア、USA)
    • Related Report
      2012 Annual Research Report
  • [Presentation] Room-Temperature Terahertz Oscillation of Resonant Tunneling Diodes and Preliminary Experiments on Wireless Communication Application2011

    • Author(s)
      M.Asada
    • Organizer
      Japan-Korea Joint Workshop
    • Place of Presentation
      Nagoya(招待講演)
    • Year and Date
      2011-12-19
    • Related Report
      2011 Annual Research Report
  • [Presentation] Fabrication process of multi-layered amorphous silicon wire waveguides2011

    • Author(s)
      J.H.Kang
    • Organizer
      Technical Report of IEICE
    • Place of Presentation
      Tokyo
    • Year and Date
      2011-12-16
    • Related Report
      2011 Annual Research Report
  • [Presentation] GaInAsP/Si Hybrid Laser with AlInAs Oxidation Current Confinement Layer by Surface Activated Bonding2011

    • Author(s)
      R.Osabe
    • Organizer
      Technical Meeting of IEICE
    • Place of Presentation
      Tokyo
    • Year and Date
      2011-12-16
    • Related Report
      2011 Annual Research Report
  • [Presentation] High current density of InGaAs MOSFET2011

    • Author(s)
      Y.Miyamoto
    • Organizer
      IEICE Technical Report of meeting on Electron Devices
    • Place of Presentation
      Sendai(招待講演)
    • Year and Date
      2011-12-14
    • Related Report
      2011 Annual Research Report
  • [Presentation] High Drain Current (>2A/mm)InGaAs channel MOSFET at V_D =0.5 V with Shrinkage of Channel Length by InP Anisotropic Etching2011

    • Author(s)
      Y.Yonai
    • Organizer
      2011 Int.Electron Device Meeting (IEDM 2011)
    • Place of Presentation
      Washington
    • Year and Date
      2011-12-06
    • Related Report
      2011 Annual Research Report
  • [Presentation] THz Oscillating Resonant Tunneling Diode and Its Basic Properties for Wireless Communications2011

    • Author(s)
      M.Asada
    • Organizer
      Terahertz Nano- Science & Workshop on Int. Terahertz Research Network
    • Place of Presentation
      Osaka(招待講演)
    • Year and Date
      2011-11-28
    • Related Report
      2011 Annual Research Report
  • [Presentation] Wireless Data Transmission at ~560 GHz with Direct Modulation of RTD Oscillator2011

    • Author(s)
      K.Ishigaki
    • Organizer
      Terahertz Nano- Science & Workshop on Int. Terahertz Research Network
    • Place of Presentation
      Osaka
    • Year and Date
      2011-11-28
    • Related Report
      2011 Annual Research Report
  • [Presentation] L Wide-gap Athermal Si-Slot Wavelength Filters Embedded with Benzocyclobutene2011

    • Author(s)
      M.Oda
    • Organizer
      Technical Meeting of IEICE
    • Place of Presentation
      Tokyo
    • Year and Date
      2011-11-25
    • Related Report
      2011 Annual Research Report
  • [Presentation] Low-loss GaInAsP wire waveguide for optical interconnection2011

    • Author(s)
      J.Lee
    • Organizer
      Technical Meeting of IEICE
    • Place of Presentation
      Tokyo
    • Year and Date
      2011-11-25
    • Related Report
      2011 Annual Research Report
  • [Presentation] Low-threshold operation of GaInAsP/InP lateral current injection type membrane DFB lasers2011

    • Author(s)
      M.Futami
    • Organizer
      Technical Meeting of IEICE
    • Place of Presentation
      Tokyo
    • Year and Date
      2011-11-25
    • Related Report
      2011 Annual Research Report
  • [Presentation] Low-loss multiple-stacked amorphous silicon wire waveguide on SOI2011

    • Author(s)
      J. H. Kang
    • Organizer
      Technical Meeting of IEICE
    • Place of Presentation
      Tokyo
    • Year and Date
      2011-11-25
    • Related Report
      2011 Annual Research Report
  • [Presentation] Proposal of GaInAsP/SOI hybrid laser with AlInAs-oxide current confinement layer by Surface Activated Bonding2011

    • Author(s)
      R.Osabe
    • Organizer
      Technical Meeting of IEICE
    • Place of Presentation
      Tokyo
    • Year and Date
      2011-11-25
    • Related Report
      2011 Annual Research Report
  • [Presentation] Room-Temperature Fundamental Oscillation of Resonant Tunneling Diodes above 1THz2011

    • Author(s)
      M.Asada
    • Organizer
      IEICE Integrated Photonic Devices and Application Meeting (IPDA)
    • Place of Presentation
      Tokyo(招待講演)
    • Year and Date
      2011-11-16
    • Related Report
      2011 Annual Research Report
  • [Presentation] Si-based Optical Devices toward On-Chip Interconnection and One-Chip Router -Athermal, Amorphous, and III-V on Si2011

    • Author(s)
      N.Nisiyama
    • Organizer
      The 1st International Symposium on Photonics and Electronics Convergence, ISPEC2011
    • Place of Presentation
      Tokyo(招待講演)
    • Year and Date
      2011-11-14
    • Related Report
      2011 Annual Research Report
  • [Presentation] GaInAsP/InP Lateral-Current-Injection Membrane DFB Laser with Surface Grating Structure2011

    • Author(s)
      T.Shindo
    • Organizer
      The 1st International Symposium on Photonics and Electronics Convergence, ISPEC2011
    • Place of Presentation
      Tokyo
    • Year and Date
      2011-11-14
    • Related Report
      2011 Annual Research Report
  • [Presentation] Athermal Wavelength Filters toward Photonic Integrated Circuits2011

    • Author(s)
      Y.Atsumi
    • Organizer
      The 1st International Symposium on Photonics and Electronics Convergence, ISPEC2011
    • Place of Presentation
      Tokyo
    • Year and Date
      2011-11-14
    • Related Report
      2011 Annual Research Report
  • [Presentation] Design of Multi-functional GaInAsP/Si Hybrid Semiconductor Optical Amplifier2011

    • Author(s)
      K.Fukuda
    • Organizer
      The 1st International Symposium on Photonics and Electronics Convergence, ISPEC2011
    • Place of Presentation
      Tokyo
    • Year and Date
      2011-11-14
    • Related Report
      2011 Annual Research Report
  • [Presentation] Low-loss Amorphous Silicon Wire Waveguides Multilayer Stacked on SOI2011

    • Author(s)
      J.H.Kang
    • Organizer
      The 1st International Symposium on Photonics and Electronics Convergence, ISPEC2011
    • Place of Presentation
      Tokyo
    • Year and Date
      2011-11-14
    • Related Report
      2011 Annual Research Report
  • [Presentation] Low-Loss GaInAsP Photonic Wire Waveguide for Optical Interconnection2011

    • Author(s)
      J.Lee
    • Organizer
      The 1st International Symposium on Photonics and Electronics Convergence, ISPEC2011
    • Place of Presentation
      Tokyo
    • Year and Date
      2011-11-14
    • Related Report
      2011 Annual Research Report
  • [Presentation] Room-Temperature Terahertz Sources Using Resonant Tunneling Diodes2011

    • Author(s)
      M.Asada
    • Organizer
      JSPS No.182 Meeting
    • Place of Presentation
      Hamamatsu(招待講演)
    • Year and Date
      2011-10-24
    • Related Report
      2011 Annual Research Report
  • [Presentation] Intensity Modulation of Sub-Terahertz Oscillating Resonant Tunneling Diode by Irradiation of 1.55-μm Laser2011

    • Author(s)
      S.Kaburaki
    • Organizer
      IEEE Photonics Conference (IPC 11)
    • Place of Presentation
      Arlington/VA
    • Year and Date
      2011-10-13
    • Related Report
      2011 Annual Research Report
  • [Presentation] Non-unity Permeability in InP-based Mach-Zehnder Interferometer with Metamaterial2011

    • Author(s)
      T.Amemiya
    • Organizer
      2011 IEEE Photonics Conference (IPC-2011)
    • Place of Presentation
      Arlington, USA
    • Year and Date
      2011-10-13
    • Related Report
      2011 Annual Research Report
  • [Presentation] Carrier Concentration Dependent Resonance Frequency Shift in Metamaterial Loaded Semiconductor2011

    • Author(s)
      S.Myoga
    • Organizer
      2011 IEEE Photonics Conference (IPC-2011)
    • Place of Presentation
      Arlington, USA
    • Year and Date
      2011-10-13
    • Related Report
      2011 Annual Research Report
  • [Presentation] Lateral Current Injection Laser with Uniformly Distributed Quantum-Well Structure2011

    • Author(s)
      T.Shindo
    • Organizer
      2011 IEEE Photonics Conference (IPC-2011)
    • Place of Presentation
      Arlington, USA
    • Year and Date
      2011-10-13
    • Related Report
      2011 Annual Research Report
  • [Presentation] Membrane InP-based Lasers and Related Devices for On-chip Interconnects2011

    • Author(s)
      N.Nishiyama
    • Organizer
      2011 IEEE Photonics Conference (IPC-2011)
    • Place of Presentation
      Arlington, USA
    • Year and Date
      2011-10-13
    • Related Report
      2011 Annual Research Report
  • [Presentation] Room-Temperature Lasing Operation of a 1.3-μm npn-AlGaInAs/InP Transistor Laser2011

    • Author(s)
      T.Sato
    • Organizer
      2011 IEEE Photonics Conference (IPC-2011)
    • Place of Presentation
      Arlington, USA
    • Year and Date
      2011-10-12
    • Related Report
      2011 Annual Research Report
  • [Presentation] Direct Modulation of THz-Oscillating Resonant Tunneling Diodes2011

    • Author(s)
      K.Ishigaki
    • Organizer
      Infrared and Millimeter Waves & Terahertz Electronics (IRMMW-THz 2011)
    • Place of Presentation
      Huston
    • Year and Date
      2011-10-05
    • Related Report
      2011 Annual Research Report
  • [Presentation] Dependence of Output Power on Slot Antenna Width in Terahertz Oscillating Resonant Tunneling Diodes2011

    • Author(s)
      H.Shibayama
    • Organizer
      Infrared and Millimeter Waves & Terahertz Electronics (IRMMW-THz 2011)
    • Place of Presentation
      Huston
    • Year and Date
      2011-10-05
    • Related Report
      2011 Annual Research Report
  • [Presentation] High-currento-density InP ultrafine devices for high-speed operation2011

    • Author(s)
      Y.Miyamoto
    • Organizer
      Infrared and Millimeter Waves & Terahertz Electronics (IRMMW-THz 2011)
    • Place of Presentation
      Huston(招待講演)
    • Year and Date
      2011-10-04
    • Related Report
      2011 Annual Research Report
  • [Presentation] GaAsSb/InGaAs Vertical Tunnel FET with a 25 nm-wide Channel Mesa Structure2011

    • Author(s)
      M.Fujimatsu
    • Organizer
      2011 Int.Conf.Solid state Devices and Materials (SSDM 2011)
    • Place of Presentation
      Aichi, Japan
    • Year and Date
      2011-09-29
    • Related Report
      2011 Annual Research Report
  • [Presentation] Wide-Gap Athermal Si-Slot Mach-Zhender Interferometer Embedded with Benzocyclobutene2011

    • Author(s)
      Y.Atsumi
    • Organizer
      The 8th Int.Conf, on Group IV Photonics
    • Place of Presentation
      London, UK
    • Year and Date
      2011-09-16
    • Related Report
      2011 Annual Research Report
  • [Presentation] メタマテリアルを有するInP系マッハツェンダー導波路における透磁率変化の推定2011

    • Author(s)
      雨宮智宏
    • Organizer
      The 2011 IEICE Society Conf.
    • Place of Presentation
      Sapporo
    • Year and Date
      2011-09-15
    • Related Report
      2011 Annual Research Report
  • [Presentation] オンチップ光通信に向けたInP/Si貼り付け技術とその光デバイス特性2011

    • Author(s)
      雨宮智宏
    • Organizer
      The 2011 IEICE Society Conf.
    • Place of Presentation
      Sapporo
    • Year and Date
      2011-09-15
    • Related Report
      2011 Annual Research Report
  • [Presentation] BCB埋め込み温度無依存SiスロットMZI型波長フィルタ信号伝送特性の温度依存性2011

    • Author(s)
      小田学
    • Organizer
      The 2011 IEICE Society Conf.
    • Place of Presentation
      Sapporo
    • Year and Date
      2011-09-15
    • Related Report
      2011 Annual Research Report
  • [Presentation] オンチップ光配線に向けた光導波路作製2011

    • Author(s)
      姜〓〓
    • Organizer
      The 2011 IEICE Society Conf.
    • Place of Presentation
      Sapporo
    • Year and Date
      2011-09-15
    • Related Report
      2011 Annual Research Report
  • [Presentation] 金属側壁層を有するプラズモニックDFBレーザの理論解析2011

    • Author(s)
      雨宮智宏
    • Organizer
      The 2011 IEICE Society Conf.
    • Place of Presentation
      Sapporo
    • Year and Date
      2011-09-14
    • Related Report
      2011 Annual Research Report
  • [Presentation] 電子ランチャを持つInGaAs MOSFETにおけるヘテロ障壁高さ依存性2011

    • Author(s)
      池田俊介
    • Organizer
      The 2011 IEICE Society Conf.
    • Place of Presentation
      Hokkaido
    • Year and Date
      2011-09-13
    • Related Report
      2011 Annual Research Report
  • [Presentation] ソース裏面電極によるInP/InGaAsコンポジットチャネルMOSFETのアクセス抵抗低減2011

    • Author(s)
      加藤淳
    • Organizer
      The 2011 IEICE Society Conf.
    • Place of Presentation
      Hokkaido
    • Year and Date
      2011-09-13
    • Related Report
      2011 Annual Research Report
  • [Presentation] GaAsSb/InGaAsヘテロ接合を用いた縦型トンネルFETの作製・評価2011

    • Author(s)
      藤松基彦
    • Organizer
      The 2011 IEICE Society Conf.
    • Place of Presentation
      Hokkaido
    • Year and Date
      2011-09-13
    • Related Report
      2011 Annual Research Report
  • [Presentation] InP系化合物半導体を用いたMOSFETの技術動向2011

    • Author(s)
      宮本恭幸
    • Organizer
      Meeting of Electronics, Information and Systems Society, The Institute of Electrical Engineers of Japan
    • Place of Presentation
      Toyama
    • Year and Date
      2011-09-09
    • Related Report
      2011 Annual Research Report
  • [Presentation] 再成長ソース/ドレインを用いたIII-V族MOSFETの高電流動作2011

    • Author(s)
      金澤徹
    • Organizer
      The 72nd Autumn Meeting, The Japan Society of Applied Physics
    • Place of Presentation
      Yamagata
    • Year and Date
      2011-09-02
    • Related Report
      2011 Annual Research Report
  • [Presentation] 幅広ギャップ構造を有する温度無依存BCB埋め込みSiスロット型リング共振器2011

    • Author(s)
      渥美裕樹
    • Organizer
      The 72th Autumn Meeting, The Japan Society of Applied Physics and Related Societie
    • Place of Presentation
      Yamagata
    • Year and Date
      2011-09-02
    • Related Report
      2011 Annual Research Report
  • [Presentation] ICP-RIEを用いたAlGaInAs/InP埋め込みヘテロ構造レーザ2011

    • Author(s)
      佐藤憲明
    • Organizer
      The 72th Autumn Meeting, The Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Yamagata
    • Year and Date
      2011-09-01
    • Related Report
      2011 Annual Research Report
  • [Presentation] 1.3-μm帯npn-AlGaInAs/InPトランジスタレーザの室温パルス動作2011

    • Author(s)
      佐藤孝司
    • Organizer
      The 72th Autumn Meeting, The Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Yamagata
    • Year and Date
      2011-09-01
    • Related Report
      2011 Annual Research Report
  • [Presentation] AlInAs酸化狭窄層を有するGaInAsP/InP-Siハイブリッドレーザの構造設計2011

    • Author(s)
      長部亮
    • Organizer
      The 72th Autumn Meeting, The Japan Society of Applied Physics and Related Societie
    • Place of Presentation
      Yamagata
    • Year and Date
      2011-09-01
    • Related Report
      2011 Annual Research Report
  • [Presentation] 横方向電流注入型レーザにおける内部量子効率の量子井戸構造依存性2011

    • Author(s)
      二見充輝
    • Organizer
      The 72th Autumn Meeting, The Japan Society of Applied Physics and Related Societie
    • Place of Presentation
      Yamagata
    • Year and Date
      2011-09-01
    • Related Report
      2011 Annual Research Report
  • [Presentation] 表面回折格子を有する横方向電流注入型メンブレンDFBレーザ2011

    • Author(s)
      進藤隆彦
    • Organizer
      The 72th Autumn Meeting, The Japan Society of Applied Physics and Related Societie
    • Place of Presentation
      Yamagata
    • Year and Date
      2011-09-01
    • Related Report
      2011 Annual Research Report
  • [Presentation] Dependence of Output Power on Slot Antenna Width in Terahertz Oscillating Resonant Tunneling Diodes2011

    • Author(s)
      H.Shibayama
    • Organizer
      The 72nd Autumn Meeting, The Japan Society of Applied Physics
    • Place of Presentation
      Yamagata
    • Year and Date
      2011-08-31
    • Related Report
      2011 Annual Research Report
  • [Presentation] Direct Modulation and Dependence of Modulation Frequency Limiton External Circuits in THz-Oscillating Resonant Tunneling Diodes2011

    • Author(s)
      K.Ishigaki
    • Organizer
      The 72nd Autumn Meeting, The Japan Society of Applied Physics
    • Place of Presentation
      Yamagata
    • Year and Date
      2011-08-31
    • Related Report
      2011 Annual Research Report
  • [Presentation] Intensity Modulation of Sub-Terahertz Oscillating Resonant Tunneling Diode by Irradiationof 1.55-μm Laser2011

    • Author(s)
      S.Kaburaki
    • Organizer
      The 72nd Autumn Meeting, The Japan Society of Applied Physics
    • Place of Presentation
      Yamagata
    • Year and Date
      2011-08-31
    • Related Report
      2011 Annual Research Report
  • [Presentation] Numerical Analysis of Optical Gain of a 3-terminal HBT-SOA2011

    • Author(s)
      M.Shirao
    • Organizer
      IQEC/CLEO Pacific Rim 2011
    • Place of Presentation
      Sydney, Australia
    • Year and Date
      2011-08-31
    • Related Report
      2011 Annual Research Report
  • [Presentation] 半導体装荷型メタマテリアルにおけるキャリア濃度に依存した共振周波数変化2011

    • Author(s)
      明賀聖慈
    • Organizer
      The 72th Autumn Meeting, The Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Yamagata
    • Year and Date
      2011-08-31
    • Related Report
      2011 Annual Research Report
  • [Presentation] BCB貼付を用いたSi基板上低損失GaInAsP細線導波路の実現2011

    • Author(s)
      李智恩
    • Organizer
      The 72th Autumn Meeting, The Japan Society of Applied Physics and Related Societie
    • Place of Presentation
      Yamagata
    • Year and Date
      2011-08-31
    • Related Report
      2011 Annual Research Report
  • [Presentation] Si導波路幅の制御によるGaInAsP/SiハイブリッドSOA多機能集積のための設計2011

    • Author(s)
      福田渓太
    • Organizer
      The 72th Autumn Meeting, The Japan Society of Applied Physics and Related Societie
    • Place of Presentation
      Yamagata
    • Year and Date
      2011-08-31
    • Related Report
      2011 Annual Research Report
  • [Presentation] Terahertz Oscillation of InGaAs/AlAs Resonant Tunneling Diodes at Room Temperature2011

    • Author(s)
      S.Suzuki
    • Organizer
      Topical Workshop on Heterostructure Materials
    • Place of Presentation
      Gifu, Japan(招待講演)
    • Year and Date
      2011-08-30
    • Related Report
      2011 Annual Research Report
  • [Presentation] Fabrication of InP/InGaAs SHBT on Si Substrate by Using Transferred Substrate Process2011

    • Author(s)
      Y.Yamaguchi
    • Organizer
      9th Topical Workshop on Heterostructure Materials (TWHM 2011)
    • Place of Presentation
      Gifu, Japan
    • Year and Date
      2011-08-29
    • Related Report
      2011 Annual Research Report
  • [Presentation] Semiconductor DFB Laser with Plasmonic Metal Layers for Subwavelength Confinement of Light2011

    • Author(s)
      T.Amemiya
    • Organizer
      IQEC/CLEO Pacific Rim 2011
    • Place of Presentation
      Sydney, Australia
    • Year and Date
      2011-08-28
    • Related Report
      2011 Annual Research Report
  • [Presentation] Terahertz Oscillation of Resonant Tunneling Diodes at Room Temperature2011

    • Author(s)
      M.Asada
    • Organizer
      Opto-electronics and Nanostructures (EDISON17)
    • Place of Presentation
      Santa Barbara(招待講演)
    • Year and Date
      2011-08-11
    • Related Report
      2011 Annual Research Report
  • [Presentation] Stripe Width Dependence of Internal Quantum Efficiency and Carrier Injection Delay in Lateral Current Injection GaInAsP/InP Lasers2011

    • Author(s)
      M.Futami
    • Organizer
      The 16th Opto-Electronics and Communication Conference (OECC2011)
    • Place of Presentation
      Kaohsiung, Taiwan
    • Year and Date
      2011-07-07
    • Related Report
      2011 Annual Research Report
  • [Presentation] Lasing Operation of Lateral-Current-Inj ection Membrane DFB Laser with Surface Grating2011

    • Author(s)
      T.Shindo
    • Organizer
      The 16th Opto-Electronics and Communication Conference (OECC2011)
    • Place of Presentation
      Kaohsiung, Taiwan
    • Year and Date
      2011-07-06
    • Related Report
      2011 Annual Research Report
  • [Presentation] Wide Bandwidth (>25Gbit/s) Modulation of Low Power Consumption Distributed Reflector Lasers with Wire-like Active Region2011

    • Author(s)
      N.Nishiyama
    • Organizer
      Technical Report of IEICE
    • Place of Presentation
      Tokyo
    • Year and Date
      2011-06-30
    • Related Report
      2011 Annual Research Report
  • [Presentation] Reduction of Base-Collector Capacitance in InP/InGaAs DHBT with Buried SiO_2 Wires2011

    • Author(s)
      N.Takebe
    • Organizer
      2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2011)
    • Place of Presentation
      Daejeon, Korea
    • Year and Date
      2011-06-29
    • Related Report
      2011 Annual Research Report
  • [Presentation] Reduction of Access Resistance of InP InGaAs Composite-Channel MOSFET with A Back Source Electrode2011

    • Author(s)
      A.Kato
    • Organizer
      2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2011)
    • Place of Presentation
      Daejeon, Korea
    • Year and Date
      2011-06-29
    • Related Report
      2011 Annual Research Report
  • [Presentation] Room-Temperature THz Oscillation of Resonant Tunneling Diodes2011

    • Author(s)
      M.Asada
    • Organizer
      Microwave/Terahertz Science and Applications
    • Place of Presentation
      Nanjing, China(招待講演)
    • Year and Date
      2011-06-21
    • Related Report
      2011 Annual Research Report
  • [Presentation] MOVPE-regrown source/drain regions for III-V MOSFETs with high drain current of 1.27 A/mm2011

    • Author(s)
      T.Kanazawa
    • Organizer
      The 23rd Int. Conf. Indium Phosphide & Related Materials (IPRM 2011)
    • Place of Presentation
      Berlin
    • Year and Date
      2011-05-25
    • Related Report
      2011 Annual Research Report
  • [Presentation] High Output Power (~400 μW)Oscillators at Around 550 GHz Using Large Area RTD and Optimized Antenna Structure2011

    • Author(s)
      M.Shiraishi
    • Organizer
      Indium Phosphide & Related Materials (IPRM 2011)
    • Place of Presentation
      Berlin
    • Year and Date
      2011-05-24
    • Related Report
      2011 Annual Research Report
  • [Presentation] Fundamental Oscillation up to 1.08 THz in Resonant Tunneling Diodes with High Indium Composition Transit Layers2011

    • Author(s)
      A.Teranishi
    • Organizer
      Indium Phosphide & Related Materials (IPRM 2011)
    • Place of Presentation
      Berlin
    • Year and Date
      2011-05-24
    • Related Report
      2011 Annual Research Report
  • [Presentation] Reduction of source parasitic capacitance in vertical InGaAs MIS-FET2011

    • Author(s)
      Y.Matsumoto
    • Organizer
      The 23rd Int. Conf. Indium Phosphide & Related Materials (IPRM 2011)
    • Place of Presentation
      Berlin
    • Year and Date
      2011-05-24
    • Related Report
      2011 Annual Research Report
  • [Presentation] Low-power Consumption and High-eye-margin 10 Gbit/s Operation of Distributed Reflector Laser with Wirelike Active Regions2011

    • Author(s)
      D.Takahashi
    • Organizer
      The 23rd Int.Conf.Indium Phosphide and Related Materials (IPRM-2011)
    • Place of Presentation
      Berlin, Germany
    • Year and Date
      2011-05-24
    • Related Report
      2011 Annual Research Report
  • [Presentation] Lasing Operation of Long-Wavelength Transistor Laser Using AlGaInAs/InP Quantum Well Active Region2011

    • Author(s)
      M.Shirao
    • Organizer
      The 23rd Int.Conf.Indium Phosphide and Related Materials (IPRM-2011)
    • Place of Presentation
      Berlin, Germany
    • Year and Date
      2011-05-24
    • Related Report
      2011 Annual Research Report
  • [Presentation] Uniform BCB Bonding Process Toward Low Propagation Loss2011

    • Author(s)
      Y.Maeda
    • Organizer
      The 23rd Int.Conf.on Indium Phosphide and Related Materials (IPRM-2011)
    • Place of Presentation
      Berlin, Germany
    • Year and Date
      2011-05-24
    • Related Report
      2011 Annual Research Report
  • [Presentation] Lateral Current Injection Distributed Feedback Laser with Wirelike Active Regions2011

    • Author(s)
      T.Shindo
    • Organizer
      The 23rd Int.Conf.on Indium Phosphide and Related Materials (IPRM-2011)
    • Place of Presentation
      Berlin, Germany
    • Year and Date
      2011-05-24
    • Related Report
      2011 Annual Research Report
  • [Presentation] Effect of Thermal Cleaning on Regrowth Interface Quality of AlGaInAs/InP Buried Heterostructure Lasers2011

    • Author(s)
      N.Sato
    • Organizer
      The 38th Int. Symposium on Compound Semiconductors (ISCS2011)
    • Place of Presentation
      Berlin, Germany
    • Year and Date
      2011-05-23
    • Related Report
      2011 Annual Research Report
  • [Presentation] 3端子を有するヘテロ接合バイポーラトランジスタ型SOAの数値解析2011

    • Author(s)
      白尾瑞基
    • Organizer
      The 58th Spring Meeting, The Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Atsugi, Japan
    • Year and Date
      2011-03-27
    • Related Report
      2010 Annual Research Report
  • [Presentation] III-V化合物半導体のキャリアを用いたメタマテリアルの共振周波数変化2011

    • Author(s)
      明賀聖慈
    • Organizer
      The 58th Spring Meeting, The Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Atsugi, Japan
    • Year and Date
      2011-03-27
    • Related Report
      2010 Annual Research Report
  • [Presentation] 高インジウム組成電子走行層を有する共鳴トンネルダイオードによる1.08 THzへの基本波発振周波数向上2011

    • Author(s)
      寺西豊志
    • Organizer
      The 58th Spring Meeting, 2011 ; The Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Atsugi, Japan
    • Year and Date
      2011-03-27
    • Related Report
      2010 Annual Research Report
  • [Presentation] 大面積RTDとアンテナ構造最適化による550GHz帯高出力(~400μW)発振2011

    • Author(s)
      白石誠人
    • Organizer
      The 58th Spring Meeting, 2011 ; The Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Atsugi, Japan
    • Year and Date
      2011-03-27
    • Related Report
      2010 Annual Research Report
  • [Presentation] MIMキャパシタンス減少による共鳴トンネルダイオード発振素子の変調周波数向上2011

    • Author(s)
      石垣要
    • Organizer
      The 58th Spring Meeting, 2011 ; The Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Atsugi, Japan
    • Year and Date
      2011-03-27
    • Related Report
      2010 Annual Research Report
  • [Presentation] ボウタイアンテナ集積型Ni-InP SBDのカットオフ周波数の向上2011

    • Author(s)
      丸山薫
    • Organizer
      The 58th Spring Meeting, 2011 ; The Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Atsugi, Japan
    • Year and Date
      2011-03-27
    • Related Report
      2010 Annual Research Report
  • [Presentation] GaN HEMTにおけるゲートリークの解析2011

    • Author(s)
      大石敏之
    • Organizer
      The 58th Spring Meeting, 2011 ; The Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Atsugi, Japan
    • Year and Date
      2011-03-27
    • Related Report
      2010 Annual Research Report
  • [Presentation] 細線状活性層を有するGaInAsP/InP横方向電流注入型DFBレーザ2011

    • Author(s)
      二見充輝
    • Organizer
      The 58th Spring Meeting, The Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Atsugi, Japan
    • Year and Date
      2011-03-26
    • Related Report
      2010 Annual Research Report
  • [Presentation] 横方向電流注入型レーザにおける発振特性のストライプ幅依存性2011

    • Author(s)
      進藤隆彦
    • Organizer
      The 58th Spring Meeting, The Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Atsugi, Japan
    • Year and Date
      2011-03-26
    • Related Report
      2010 Annual Research Report
  • [Presentation] 1.3-μm帯pnp-AlGaInAs/InPレーザトランジスタの室温連続動作2011

    • Author(s)
      佐藤孝司
    • Organizer
      The 58th Spring Meeting, The Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Atsugi, Japan
    • Year and Date
      2011-03-26
    • Related Report
      2010 Annual Research Report
  • [Presentation] AlGaInAs/InP埋め込みヘテロ構造レーザにおけるサーマルクリーニング中雰囲気の再成長界面品質に対する影響2011

    • Author(s)
      佐藤憲明
    • Organizer
      The 58th Spring Meeting, The Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Atsugi, Japan
    • Year and Date
      2011-03-26
    • Related Report
      2010 Annual Research Report
  • [Presentation] 金属側壁層を有するプラズモニックDFBレーザの理論解析2011

    • Author(s)
      雨宮智宏
    • Organizer
      The 58th Spring Meeting, The Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Atsugi, Japan
    • Year and Date
      2011-03-26
    • Related Report
      2010 Annual Research Report
  • [Presentation] GaAsSb/InGaAsヘテロ接合を用いた縦型トンネルFETに関する研究2011

    • Author(s)
      藤松基彦
    • Organizer
      The 58th Spring Meeting, 2011 ; The Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Atsugi, Japan
    • Year and Date
      2011-03-26
    • Related Report
      2010 Annual Research Report
  • [Presentation] 基板転写プロセスを用いたSi基板上InGaAs SHBTの作製2011

    • Author(s)
      山口裕太郎
    • Organizer
      The 58th Spring Meeting, 2011 ; The Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Atsugi, Japan
    • Year and Date
      2011-03-26
    • Related Report
      2010 Annual Research Report
  • [Presentation] テラヘルツデバイスの新展開:イントロダクトリー2011

    • Author(s)
      浅田雅洋
    • Organizer
      The 58th Spring Meeting, 2011 ; The Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Atsugi, Japan
    • Year and Date
      2011-03-26
    • Related Report
      2010 Annual Research Report
  • [Presentation] 共鳴トンネルダイオード室温THz発振器2011

    • Author(s)
      鈴木左文
    • Organizer
      The 58th Spring Meeting, 2011 ; The Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Atsugi, Japan
    • Year and Date
      2011-03-26
    • Related Report
      2010 Annual Research Report
  • [Presentation] InP/InGaAs DHBTにおけるSiO_2細線埋め込みによるベースコレクタ間容量の消減2011

    • Author(s)
      武部直明
    • Organizer
      The 58th Spring Meeting, 2011 ; The Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Atsugi, Japan
    • Year and Date
      2011-03-26
    • Related Report
      2010 Annual Research Report
  • [Presentation] 幅広ギャップ構造を有するBCB埋め込み温度無依存SiスロットMZI2011

    • Author(s)
      渥美裕樹
    • Organizer
      The 58th Spring Meeting, The Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Atsugi, Japan
    • Year and Date
      2011-03-24
    • Related Report
      2010 Annual Research Report
  • [Presentation] 多層化されたアモルファスシリコン細線導波路の低損失伝搬特性2011

    • Author(s)
      姜〓〓
    • Organizer
      The 58th Spring Meeting, The Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Atsugi, Japan
    • Year and Date
      2011-03-24
    • Related Report
      2010 Annual Research Report
  • [Presentation] 細線状活性層を有する分布反射型レーザの変調帯域拡大と10Gbit/s低消費電力動作2011

    • Author(s)
      高橋大佑
    • Organizer
      The 2011 IEICE General conf.
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2011-03-16
    • Related Report
      2010 Annual Research Report
  • [Presentation] 多層光回路構造実現のための異種基板積層技術とデバイス特性2011

    • Author(s)
      西山伸彦
    • Organizer
      The 2011 IEICE General conf.
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2011-03-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] Meta-photonic device ~possicbility of permeability control in semiconductor-based photonic device combined with metamaterial~2011

    • Author(s)
      T.Amemiya
    • Organizer
      Technical Report of IEICE
    • Place of Presentation
      Kagoshima, Japan
    • Year and Date
      2011-02-28
    • Related Report
      2010 Annual Research Report
  • [Presentation] Lateral Current Injection GaInAsP/InP Llaser for Membrane Based Photonic Circuits2011

    • Author(s)
      S.Arai
    • Organizer
      SPIE Photonics West Conference 2011
    • Place of Presentation
      San Francisco, California, USA
    • Year and Date
      2011-01-24
    • Related Report
      2010 Annual Research Report
  • [Presentation] III-V quantum well channel MOSFET with back electrode2011

    • Author(s)
      T.Kanazawa
    • Organizer
      IEICE Technical Report of Meeting on Electron Devices
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2011-01-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] Si・SOI基板上レーザ素子の現状2011

    • Author(s)
      西山伸彦
    • Organizer
      レーザー学会学術講演会第31回年次大会
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2011-01-10
    • Related Report
      2010 Annual Research Report
  • [Presentation] Lateral Current Injection 1550 nm Wavelength DFB Laser with a-Si Surface Grating2010

    • Author(s)
      T.Shindo
    • Organizer
      Technical Report of IEICE
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-12-17
    • Related Report
      2010 Annual Research Report
  • [Presentation] Si Slot Type Athermal Wavelength Filter Embedded with Benzocyclobutene2010

    • Author(s)
      Y.Atsumi
    • Organizer
      Technical Report of IEICE
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-12-17
    • Related Report
      2010 Annual Research Report
  • [Presentation] The characteristics of GaInAsP wired waveguide on Si substrate with BCB bonding2010

    • Author(s)
      Y.Maeda
    • Organizer
      Technical Report of IEICE
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-12-17
    • Related Report
      2010 Annual Research Report
  • [Presentation] Terahertz Oscillating Resonant Tunneling Diode at Room Temperature2010

    • Author(s)
      S.Suzuki
    • Organizer
      Technical Report, Electron Device Meeting, IEICE of Japan
    • Place of Presentation
      Sendai, Japan
    • Year and Date
      2010-12-16
    • Related Report
      2010 Annual Research Report
  • [Presentation] Transit Time Reduction with Graded Emitter in Resonant Tunneling Diode Terahertz Oscillators2010

    • Author(s)
      A.Teranishi
    • Organizer
      Technical Report, Electron Device Meeting, IEICE of Japan
    • Place of Presentation
      Sendai, Japan
    • Year and Date
      2010-12-16
    • Related Report
      2010 Annual Research Report
  • [Presentation] Membrane DFB lasers on SOI2010

    • Author(s)
      S.Arai
    • Organizer
      Asia Communications and Photonics Conf.and Exhibition 2010(ACP2010)
    • Place of Presentation
      Shanghai, China
    • Year and Date
      2010-12-09
    • Related Report
      2010 Annual Research Report
  • [Presentation] Lateral Current Injection Type GaInAsP/InP DFB Laser with a-Si Surface Grating2010

    • Author(s)
      T.Shindo
    • Organizer
      The 23rd Annual Meeting of the IEEE Photonics Society(PHO 2010)
    • Place of Presentation
      Denver, CO, USA
    • Year and Date
      2010-11-11
    • Related Report
      2010 Annual Research Report
  • [Presentation] Metamaterial-based Control of Permeability in GaInAsP/InP Multimode-Interferometers2010

    • Author(s)
      T.Amemiya
    • Organizer
      The 23rd Annual Meeting of the IEEE Photonics Society(PHO 2010)
    • Place of Presentation
      Denver, CO, USA
    • Year and Date
      2010-11-10
    • Related Report
      2010 Annual Research Report
  • [Presentation] Low-Loss Si-Slot Waveguides and Ring Resonator Embedded with Benzocyclobutene2010

    • Author(s)
      Y.Atsumi
    • Organizer
      The 23rd Annual Meeting of the IEEE Photonics Society(PHO 2010)
    • Place of Presentation
      Denver, CO, USA
    • Year and Date
      2010-11-09
    • Related Report
      2010 Annual Research Report
  • [Presentation] THz Oscillators Using Resonant Tunneling Diodes Int.Conf.Semiconductor Integrated Circuits and Technology2010

    • Author(s)
      M.Asada
    • Organizer
      10th IEEE Int.Conf.on Solid-State and Integrated Circuit Technology(ICSICT-2010)
    • Place of Presentation
      Shanghai, China
    • Year and Date
      2010-11-02
    • Related Report
      2010 Annual Research Report
  • [Presentation] Submicron-Channel InGaAs MISFET with epitaxially grown source2010

    • Author(s)
      Y.Miyamoto
    • Organizer
      10th IEEE Int.Conf.Solid-State and Integrated Circuit Technology(ICSICT-2010)
    • Place of Presentation
      Shanghai, China
    • Year and Date
      2010-11-02
    • Related Report
      2010 Annual Research Report
  • [Presentation] 1.04 THz Fundamental Oscillation of Resonant Tunneling Diode at Room Temperature2010

    • Author(s)
      S.Suzuki
    • Organizer
      European Optical Society (EOS) Annual Meeting, Terahertz Science and Technology
    • Place of Presentation
      Paris, France
    • Year and Date
      2010-10-26
    • Related Report
      2010 Annual Research Report
  • [Presentation] Terahertz Oscillating Resonant Tunneling Diode at Room Temperature2010

    • Author(s)
      S.Suzuki
    • Organizer
      JSPS, No.130 Committee Meeting
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-10-22
    • Related Report
      2010 Annual Research Report
  • [Presentation] First Lasing Operation of Injection Type Membrane GaInAsP DFB Laser With Lateral Current Injection BH Structure2010

    • Author(s)
      T.Okumura
    • Organizer
      The 22nd IEEE Int. Semiconductor Laser Conf.(ISLC 2010)
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2010-09-29
    • Related Report
      2010 Annual Research Report
  • [Presentation] Membrane Lasers on Si-Low Power Consumption Lasers for Monolithic Integration2010

    • Author(s)
      S.Arai
    • Organizer
      Workshop on Semiconductor Lasers, at The 22nd IEEE Int. Semiconductor Laser Conf.(ISLC 2010)
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2010-09-26
    • Related Report
      2010 Annual Research Report
  • [Presentation] Membrane-Type Photonic Devices for Optical Circuits on SOI2010

    • Author(s)
      S.Arai
    • Organizer
      2010 Int.Conf.on Solid State Devices and Materials(SSDM 2010)
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-09-24
    • Related Report
      2010 Annual Research Report
  • [Presentation] Loss Measurement of Multiple Layer a-Si Waveguides toward 3D Si-Optical Circuits2010

    • Author(s)
      J.Kang
    • Organizer
      2010 Int.Conf.on Solid State Devices and Materials(SSDM 2010)
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-09-24
    • Related Report
      2010 Annual Research Report
  • [Presentation] Terahertz Oscillating InGaAs/AlAs Resonant Tunneling Diodes2010

    • Author(s)
      S.Suzuki
    • Organizer
      2010 Int.Conf.Solid State Devices and Materials(SSDM 2010)
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-09-23
    • Related Report
      2010 Annual Research Report
  • [Presentation] InP/InGaAs MOSFET with back-electrode structure bonded on Si substrate using a BCB adhesive Layer2010

    • Author(s)
      T.Kanazawa
    • Organizer
      2010 International Conference on Solid State Devices and Materials(SSDM 2010)
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-09-22
    • Related Report
      2010 Annual Research Report
  • [Presentation] 1.04 THz Fundamental Oscillation of Resonant Tunneling Diode at Room Temperature2010

    • Author(s)
      S.Suzuki
    • Organizer
      2nd Japanese-Russian Young Scientists Conference on Nanomaterials and Nnanotechnology
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-09-21
    • Related Report
      2010 Annual Research Report
  • [Presentation] 共鳴トンネルダイオードによる1.04THz基本波発振2010

    • Author(s)
      鈴木左文
    • Organizer
      The 71th Autumn Meeting, 2010 ; The Japan Society of Applied Physics
    • Place of Presentation
      Nagasaki, Japan
    • Year and Date
      2010-09-17
    • Related Report
      2010 Annual Research Report
  • [Presentation] 入力信号と局部発振にRTDを用いたInP-SBDのサブTHzヘテロダイン検出2010

    • Author(s)
      辛島宏一
    • Organizer
      The 71th Autumn Meeting, 2010 ; The Japan Society of Applied Physics
    • Place of Presentation
      Nagasaki, Japan
    • Year and Date
      2010-09-17
    • Related Report
      2010 Annual Research Report
  • [Presentation] a-Si表面回折格子を用いた横方向電流注入型DFBレーザ2010

    • Author(s)
      進藤隆彦
    • Organizer
      The 71st Autumn Meeting, The Japan Society of Applied Physics
    • Place of Presentation
      Nagasaki, Japan
    • Year and Date
      2010-09-16
    • Related Report
      2010 Annual Research Report
  • [Presentation] 半導体薄膜DFBレーザの電流注入動作2010

    • Author(s)
      小口貴之
    • Organizer
      The 71st Autumn Meeting, The Japan Society of Applied Physics
    • Place of Presentation
      Nagasaki, Japan
    • Year and Date
      2010-09-16
    • Related Report
      2010 Annual Research Report
  • [Presentation] SOI基板上集積二重導波路構造レーザの理論検討2010

    • Author(s)
      伊藤瞳
    • Organizer
      The 71st Autumn Meeting, 2010, The Japan Society of Applied Physics
    • Place of Presentation
      Nagasaki, Japan
    • Year and Date
      2010-09-16
    • Related Report
      2010 Annual Research Report
  • [Presentation] 活性層分離型分布反射型レーザの変調特性の構造依存性2010

    • Author(s)
      高橋大佑
    • Organizer
      The 71st Autumn Meeting, The Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Nagasaki, Japan
    • Year and Date
      2010-09-16
    • Related Report
      2010 Annual Research Report
  • [Presentation] GaInAsP/InP細線状活性層を有するDBRの透過反射スペクトル特性2010

    • Author(s)
      信野圭祐
    • Organizer
      The 71st Autumn Meeting, The Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Nagasaki, Japan
    • Year and Date
      2010-09-16
    • Related Report
      2010 Annual Research Report
  • [Presentation] III-V族半導体薄膜光集積回路実現に向けた薄膜品質の改善2010

    • Author(s)
      前田泰奈
    • Organizer
      The 71st Autumn Meeting, The Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Nagasaki, Japan
    • Year and Date
      2010-09-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] 表面活性化接合法によるSOI導波路上GaInAsP薄膜構造の形成2010

    • Author(s)
      長部亮
    • Organizer
      The 71st Autumn Meeting, The Japan Society of Applied Physics
    • Place of Presentation
      Nagasaki, Japan
    • Year and Date
      2010-09-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] BCB埋め込みスロットリング共振器の低損失化2010

    • Author(s)
      渥美裕樹
    • Organizer
      The 71st Autumn Meeting, The Japan Society of Applied Physics
    • Place of Presentation
      Nagasaki, Japan
    • Year and Date
      2010-09-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] GaInAsP/InP MMIとメタマテリアル融合素子における透磁率変化の観測2010

    • Author(s)
      雨宮智宏
    • Organizer
      The 71st Autumn Meeting, The Japan Society of Applied Physics
    • Place of Presentation
      Nagasaki, Japan
    • Year and Date
      2010-09-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] 共鳴トンネルダイオードによる室温テラヘルツ発振2010

    • Author(s)
      鈴木左文
    • Organizer
      Nat.Conv.Rec.,IEICE of Japan
    • Place of Presentation
      Osaka, Japan
    • Year and Date
      2010-09-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] 縦型InGaAsチャネルMISFETの高電流密度動作2010

    • Author(s)
      齋藤尚史
    • Organizer
      The 71th Autumn Meeting, 2010; The Japan Society of Applied Physics
    • Place of Presentation
      Nagasaki, Japan
    • Year and Date
      2010-09-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] 縦型InGaAs-MISFETの高周波に向けた研究2010

    • Author(s)
      松木豊
    • Organizer
      The 71th Autumn Meeting, 2010 ; The Japan Society of Applied Physics
    • Place of Presentation
      Nagasaki, Japan
    • Year and Date
      2010-09-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] Si基板上貼付された裏面電極付InP/InGaAs MOSFET2010

    • Author(s)
      金澤徹
    • Organizer
      The 71th Autumn Meeting, 2010 ; The Japan Society of Applied Physics
    • Place of Presentation
      Nagasaki, Japan
    • Year and Date
      2010-09-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] Al_2O_3ゲート絶縁膜および再成長ソースを有するサブミクロンInP/InGaAs n-MOSFET2010

    • Author(s)
      寺尾良輔
    • Organizer
      The 71th Autumn Meeting, 2010 ; The Japan Society of Applied Physics
    • Place of Presentation
      Nagasaki, Japan
    • Year and Date
      2010-09-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] Heterodyne Detection of Output of Sub-THz RTD Oscillator Using InP-SBD Detector and RTD Local Oscillator2010

    • Author(s)
      K.Karashima
    • Organizer
      Int.Conf.Infrared & Millimeter Waves and Terahertz Electronics(IRMMW-THz 2010)
    • Place of Presentation
      Rome, Italy
    • Year and Date
      2010-09-09
    • Related Report
      2010 Annual Research Report
  • [Presentation] THz oscillators using resonant tunneling diodes at room temperature2010

    • Author(s)
      M. Asada and S. Suzuki
    • Organizer
      Int. Conf. Infrared & Millimeter Waves and Terahertz Electronics (IRMMW-THz 2010)
    • Place of Presentation
      Rome
    • Year and Date
      2010-09-07
    • Related Report
      2013 Final Research Report
    • Invited
  • [Presentation] THz Oscillators Using Resonant Tunneling Diodes at Room Temperature2010

    • Author(s)
      M.Asada
    • Organizer
      Int.Conf.Infrared & Millimeter Waves and Terahertz Electronics(IRMMW-THz 2010)
    • Place of Presentation
      Rome, Italy
    • Year and Date
      2010-09-07
    • Related Report
      2010 Annual Research Report
  • [Presentation] Increase of Fundamental Oscillation Frequency in Resonant Tunneling Diode with Thin Barrier and Graded Emitter Structures2010

    • Author(s)
      S.Suzuki
    • Organizer
      Int.Conf.Infrared & Millimeter Waves and Terahertz Electronics(IRMMW-THz 2010)
    • Place of Presentation
      Rome, Italy
    • Year and Date
      2010-09-07
    • Related Report
      2010 Annual Research Report
  • [Presentation] AlGaInAs/InP埋め込みヘラロ構造レーザにおけるサーマルクリーニング中雰囲気の再成長界面品質に対する影響2010

    • Author(s)
      瀧野祐太
    • Organizer
      The 71st Autumn Meeting, The Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Nagasaki, Japan
    • Year and Date
      2010-08-19
    • Related Report
      2010 Annual Research Report
  • [Presentation] Fundamental oscillations at ~900 GHz with low bias voltages in RTDs having spike-doped structures2010

    • Author(s)
      S.Suzuki
    • Organizer
      2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD)
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-06-30
    • Related Report
      2010 Annual Research Report
  • [Presentation] Fabrication of InP/InGaAs DHBTs with buried SiO_2 wires2010

    • Author(s)
      N.Takebe
    • Organizer
      2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD)
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-06-30
    • Related Report
      2010 Annual Research Report
  • [Presentation] InGaAs MISFET with epitaxially grown source2010

    • Author(s)
      Y.Miyamoto
    • Organizer
      The 3rd Int.Symp.Organic and Inorganic Electronic Materials and Related Nanotechnologies(EM-NANO 2010)
    • Place of Presentation
      Toyama, Japan
    • Year and Date
      2010-06-23
    • Related Report
      2010 Annual Research Report
  • [Presentation] Low power consumption semiconductor lasers for optical interconnections2010

    • Author(s)
      N.Nishiyama
    • Organizer
      15th OptoElectronics and Communications Conference, (OECC 2010)
    • Place of Presentation
      Sapporo, Japan
    • Year and Date
      2010-06-08
    • Related Report
      2010 Annual Research Report
  • [Presentation] Current Status of III-V/Si Hybrid Optical Devices2010

    • Author(s)
      N.Nishiyama
    • Organizer
      15th OptoElectronics and Communications Conference, (OECC 2010)
    • Place of Presentation
      Sapporo, Japan
    • Year and Date
      2010-06-05
    • Related Report
      2010 Annual Research Report
  • [Presentation] Stabilization on Fabrication of GaInAsP/InP Membrane Structure on SOI Waveguide by Surface Activated Bonding2010

    • Author(s)
      R.Osabe
    • Organizer
      The 37th International Symposium on Compound Semiconductors(ISCS 2010)
    • Place of Presentation
      Takamatsu, Japan
    • Year and Date
      2010-06-04
    • Related Report
      2010 Annual Research Report
  • [Presentation] Direct Measurements of Characteristics of GaInAsP/InP Bragg Gratings with Periodically Etched Quantum Wells2010

    • Author(s)
      K.Shinno
    • Organizer
      The 37th Int.Sym.on Compound Semiconductors(ISCS 2010)
    • Place of Presentation
      Takamatsu, Japan
    • Year and Date
      2010-06-04
    • Related Report
      2010 Annual Research Report
  • [Presentation] Room-Temperature Oscillation of Resonant Tunneling Diodes in Terahertz Range2010

    • Author(s)
      M.Asada
    • Organizer
      37th Int.Symp.Compound Semicond.(ISCS 2010)
    • Place of Presentation
      Takamatsu, Japan
    • Year and Date
      2010-06-04
    • Related Report
      2010 Annual Research Report
  • [Presentation] Lateral Junction Waveguide Type Photodiode for Membrane Photonic Circuits2010

    • Author(s)
      D.Kondo
    • Organizer
      The 22nd Int.Conf.on Indium Phosphide and Related Materials(IPRM 2010)
    • Place of Presentation
      Takamatsu, Japan
    • Year and Date
      2010-06-03
    • Related Report
      2010 Annual Research Report
  • [Presentation] Investigation of Bonding Strength and Photoluminescence Properties of InP/Si Surface Activated Bonding2010

    • Author(s)
      S.Kondo
    • Organizer
      The 22nd Int.Conf.on Indium Phosphide and Related Materials(IPRM 2010)
    • Place of Presentation
      Takamatsu, Japan
    • Year and Date
      2010-06-02
    • Related Report
      2010 Annual Research Report
  • [Presentation] Dynamic Characteristics of Lateral Current Injection Laser2010

    • Author(s)
      T.Okumura
    • Organizer
      The 37th International Symposium on Compound Semiconductors(ISCS 2010)
    • Place of Presentation
      Takamatsu, Japan
    • Year and Date
      2010-06-02
    • Related Report
      2010 Annual Research Report
  • [Presentation] Investigation of Regrowth Interface Quality of AlGaInAs/InP Buried Heterostructure Lasers2010

    • Author(s)
      Y.Takino
    • Organizer
      The 22nd Int.Conf.on Indium Phosphide and Related Materials(IPRM 2010)
    • Place of Presentation
      Takamatsu, Japan
    • Year and Date
      2010-06-02
    • Related Report
      2010 Annual Research Report
  • [Presentation] All-optical Switch Consisting of Multimode Interferometer Combined with Metamaterials:Device Design2010

    • Author(s)
      T.Amemiya
    • Organizer
      The 22nd Int.Conf.on Indium Phosphide and Related Materials(IPRM 2010)
    • Place of Presentation
      Takamatsu, Japan
    • Year and Date
      2010-06-02
    • Related Report
      2010 Annual Research Report
  • [Presentation] Selective Undercut Etching for Ultra Narrow Mesa Structure in Vertical InGaAs Channel MISFET2010

    • Author(s)
      H.Saito
    • Organizer
      22nd Int.Conf.Indium Phosphide and Related Materials(IPRM2010)
    • Place of Presentation
      Takamatsu, Japan
    • Year and Date
      2010-06-02
    • Related Report
      2010 Annual Research Report
  • [Presentation] RTD Oscillators at 430-460 GHz with High Outpur Power(~200μW)Using Integrated Offset Slot Antennas2010

    • Author(s)
      S.Suzuki
    • Organizer
      22nd Int.Conf.Indium Phosphide and Related Compounds(IPRM2010)
    • Place of Presentation
      Takamatsu, Japan
    • Year and Date
      2010-06-02
    • Related Report
      2010 Annual Research Report
  • [Presentation] Thin-Film GaInAsP/InP Lateral Current Injection Type Fabry-Perot Laser-Improved Quantum Efficiency Operation-2010

    • Author(s)
      H.Ito
    • Organizer
      The 22nd Int.Conf.on Indium Phosphide and Related Materials(IPRM 2010)
    • Place of Presentation
      Takamatsu, Japan
    • Year and Date
      2010-06-01
    • Related Report
      2010 Annual Research Report
  • [Presentation] Deviation from Proportional Relationship between Emitter Charging Time and Inverse Current of Heterojunction Bipolar Transistors Operating at High Current Density2010

    • Author(s)
      M.Yamada
    • Organizer
      37th Int.Symp.Compound Semiconductor(ISCS 2010)
    • Place of Presentation
      Takamatsu, Japan
    • Year and Date
      2010-06-01
    • Related Report
      2010 Annual Research Report
  • [Presentation] Submicron InP/InGaAs composite channel MOSFETs with selectively regrown N^+-source/drain buried in channel undercut2010

    • Author(s)
      T.Kanazawa
    • Organizer
      22nd Int.Conf.Indium Phosphide and Related Materials(IPRM2010)
    • Place of Presentation
      Takamatsu, Japan
    • Year and Date
      2010-06-01
    • Related Report
      2010 Annual Research Report
  • [Presentation] Large Signal Analysis of AlGaInAs/InP Laser Transistor2010

    • Author(s)
      M.Shirao
    • Organizer
      Conference on Lasers and Electro Optics/International Quantum Electronics Conference(CLEO/IQEC)2010
    • Place of Presentation
      San Jose, CA, USA
    • Year and Date
      2010-05-17
    • Related Report
      2010 Annual Research Report
  • [Presentation] Si/III-Vハイブリッド光デバイスと関連技術2010

    • Author(s)
      N.Nishiyama
    • Organizer
      日本学術振興会半導体界面制御技術第154委員会研究会
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-05-13
    • Related Report
      2010 Annual Research Report
  • [Presentation] Room-Temperature Terahertz Oscillators Using Resonant Tunneling Diodes2010

    • Author(s)
      S.Suzuki
    • Organizer
      JSPS, No.162 Committee Meeting
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-05-07
    • Related Report
      2010 Annual Research Report
  • [Presentation] High-mobility MOSFET with submicron III-V channel2010

    • Author(s)
      T.Kanazawa
    • Organizer
      Technical Meeting on Electron Devices, IEE of Japan
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-03-26
    • Related Report
      2009 Annual Research Report
  • [Presentation] Bandwidth Enhancement of Distributed Reflector Lasers at Low Bias Current by Optical Injection Locking2010

    • Author(s)
      S.Lee
    • Organizer
      Opt.Fiber Commun.Conf.and National Fiber Optic Eng.Conf.(OFC/NFOEC 2010)
    • Place of Presentation
      San Diego, USA
    • Year and Date
      2010-03-24
    • Related Report
      2009 Annual Research Report
  • [Presentation] Magnetic Interaction at Optical Frequencies in InP-based Waveguide Device Combined with Metamaterial2010

    • Author(s)
      T.Amemiya
    • Organizer
      Conference on Lasers and Electro Optics/International Quantum Electronics Conference(CLEO/IQEC)2010
    • Place of Presentation
      San Jose, CA, USA
    • Year and Date
      2010-03-21
    • Related Report
      2010 Annual Research Report
  • [Presentation] 横方向電流注入レーザの変調特性2010

    • Author(s)
      奥村忠嗣
    • Organizer
      第57回応用物理学会関係連合講演会
    • Place of Presentation
      平塚市
    • Year and Date
      2010-03-19
    • Related Report
      2009 Annual Research Report
  • [Presentation] AlGaInAs/InP埋め込みヘテロ構造レーザにおける再成長界面品質のサーマルクリーニング依存性2010

    • Author(s)
      瀧野祐太
    • Organizer
      第57回応用物理学会関係連合講演会
    • Place of Presentation
      平塚市
    • Year and Date
      2010-03-19
    • Related Report
      2009 Annual Research Report
  • [Presentation] AlGaInAs量子井戸活性層を有する長波長帯レーザトランジスタ変調効率の構造依存性2010

    • Author(s)
      白尾瑞基
    • Organizer
      第57回応用物理学会関係連合講演会
    • Place of Presentation
      平塚市
    • Year and Date
      2010-03-19
    • Related Report
      2009 Annual Research Report
  • [Presentation] 再成長ソースを有するサブミクロンInP/InGaAs nMOSFETの電流電圧特性2010

    • Author(s)
      若林和也
    • Organizer
      第57回応用物理学会関係連合講演会
    • Place of Presentation
      平塚市
    • Year and Date
      2010-03-19
    • Related Report
      2009 Annual Research Report
  • [Presentation] Si基板上へ転写したInP系HBTの動作2010

    • Author(s)
      磯谷優治
    • Organizer
      第57回応用物理学会関係連合講演会
    • Place of Presentation
      平塚市
    • Year and Date
      2010-03-19
    • Related Report
      2009 Annual Research Report
  • [Presentation] 縦型InGaAsチャネルMISFETの極微細メサに向けた選択的ウェットエッチング2010

    • Author(s)
      齋藤尚史
    • Organizer
      第57回応用物理学会関係連合講演会
    • Place of Presentation
      平塚市
    • Year and Date
      2010-03-19
    • Related Report
      2009 Annual Research Report
  • [Presentation] SiO_2細線埋め込みInP/InGaAs DHBTの作製2010

    • Author(s)
      小林嵩
    • Organizer
      第57回応用物理学会関係連合講演会
    • Place of Presentation
      平塚市
    • Year and Date
      2010-03-19
    • Related Report
      2009 Annual Research Report
  • [Presentation] 共鳴トンネルダイオード発振素子の直接周波数変調とInPショットキーバリアダイオードによる検出2010

    • Author(s)
      辛島宏一
    • Organizer
      第57回応用物理学会関係連合講演会
    • Place of Presentation
      平塚市
    • Year and Date
      2010-03-18
    • Related Report
      2009 Annual Research Report
  • [Presentation] 薄膜バリアによりトンネル時間を短縮した共鳴トンネルダイオードによる基本波発振周波数向上2010

    • Author(s)
      鈴木左文
    • Organizer
      第57回応用物理学会関係連合講演会
    • Place of Presentation
      平塚市
    • Year and Date
      2010-03-18
    • Related Report
      2009 Annual Research Report
  • [Presentation] 光注入同期による活性層分離型分布反射型レーザの変調帯域増大2010

    • Author(s)
      李承勲
    • Organizer
      2010年電子情報通信学会
    • Place of Presentation
      仙台市
    • Year and Date
      2010-03-18
    • Related Report
      2009 Annual Research Report
  • [Presentation] メタマテリアルを有するInP導波路型デバイスにおける光周波数領域での磁気応答2010

    • Author(s)
      雨宮智宏
    • Organizer
      第57回応用物理学会関係連合講演会
    • Place of Presentation
      平塚市
    • Year and Date
      2010-03-18
    • Related Report
      2009 Annual Research Report
  • [Presentation] SOI基板上多層a-Si細線導波路の伝搬特性の評価2010

    • Author(s)
      井上敬太
    • Organizer
      第57回応用物理学会関係連合講演会
    • Place of Presentation
      平塚市
    • Year and Date
      2010-03-17
    • Related Report
      2009 Annual Research Report
  • [Presentation] BCB埋め込みSiスロット導波路の光伝搬損失の評価2010

    • Author(s)
      渥美裕樹
    • Organizer
      第57回応用物理学会関係連合講演会
    • Place of Presentation
      平塚市
    • Year and Date
      2010-03-17
    • Related Report
      2009 Annual Research Report
  • [Presentation] 表面活性化貼付法を用いたInP/Si接合とフォトルミネッセンス特性2010

    • Author(s)
      近藤志文
    • Organizer
      第57回応用物理学会関係連合講演会
    • Place of Presentation
      平塚市
    • Year and Date
      2010-03-17
    • Related Report
      2009 Annual Research Report
  • [Presentation] Room-Temperature Terahertz Oscillators Using Electron Devices2010

    • Author(s)
      M.Asada
    • Organizer
      Global COE International Symposium
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-03-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] Sub-Terahertz Resonant Tunneling Diode Oscillators with High Output Power Using Offset-Fed Slot Antenna and High Current Density2010

    • Author(s)
      M.Shiraishi
    • Organizer
      Global COE International Symposium
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-03-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] Detection of Output Power from Sub-THz InP-Based Resonant Tunneling Diode Oscillator Using Ni-InP Schottky Barrier Diode2010

    • Author(s)
      K.Karashima
    • Organizer
      Global COE International Symposium
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-03-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] Ferquency Increase of Resonant Tunneling Diode Oscillator in THz Range2010

    • Author(s)
      S.Suzuki
    • Organizer
      Global COE International Symposium
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-03-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] Dynamic Characteristics of Lateral Current Injection Laser2010

    • Author(s)
      T.Okumura
    • Organizer
      Global COE International Symposium
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-03-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] Improvement in Quantum Efficiency of Lateral Current Injection Laser2010

    • Author(s)
      H.Ito
    • Organizer
      Global COE International Symposium
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-03-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] Investigations of Low Temperature InP/Si Bonding by Surface Activation Process2010

    • Author(s)
      S.Kondo
    • Organizer
      Global COE International Symposium
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-03-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] Characteristics of Si Slot Waveguide Embedded with Benzocyclobutene for Athermal Ring Resonator on SOI2010

    • Author(s)
      Y.Atsumi
    • Organizer
      Clobal COE International Symposium
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-03-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] CaInAsP Wire Waveguides on Si Substrate Formed by Wafer Bonding with Benzocyclobutene2010

    • Author(s)
      Y.Maeda
    • Organizer
      Global COE International Symposium
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-03-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] Investigation of The Propagation Loss of a-Si Multiple Layer Waveguides2010

    • Author(s)
      K.Inoue
    • Organizer
      Clobal COE International Symposium
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-03-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] Effects of In-situ Thermal Cleaning for Regrowth Interface Quality of AlGaInAs/InP Buried Heterostructure Lasers by OMVPE2010

    • Author(s)
      Y.Takino
    • Organizer
      Global COE Int.Symp.
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-03-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] Low-power Consumption Distributed Reflector(DR)Laser with Wirelike Active Regions2010

    • Author(s)
      T.Shindo
    • Organizer
      Global COE Int.Symp.
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-03-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] Bandwidth Enhancement of Distributed Reflector Lasers with Wirelike Active Regions by Optical Injection Locking2010

    • Author(s)
      S.H.Lee
    • Organizer
      Global COE Int.Symp.
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-03-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] Highmesa GaInAsP/InP Lasers Buried in Benzocyclobutene towards High-Speed Distributed Reflector Lasers2010

    • Author(s)
      D.Takahashi
    • Organizer
      Global COE Int.Symp.
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-03-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] Theoretical Analysis of a AlGaInAs/InP Long-Wavelength Laser Transistor2010

    • Author(s)
      M.Shirao
    • Organizer
      Global COE Int.Symp.
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-03-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] Improvement of Modulation Speed of Semiconductor THz/Optical Direct Media Convertor2010

    • Author(s)
      Y.Numajiri
    • Organizer
      Global COE International Symposium
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-03-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] Selective undercut etching for ultra narrow mesa structure in vertical InGaAs channel MISFET2010

    • Author(s)
      H.Saito
    • Organizer
      Global COE International Symposium
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-03-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] Resonant Tunneling Diode Oscillators in the Terahertz Range at Room Temperature toward High Frequency, High Output Power, and High Functionality2010

    • Author(s)
      M.Asada
    • Organizer
      Joint Technical Meeting of Japan.Appl.Phys.Soc., THz Tech.Meeting & IEICE of Japan, THz Applied System Meeting
    • Place of Presentation
      Miyagi, Japan
    • Year and Date
      2010-02-26
    • Related Report
      2009 Annual Research Report
  • [Presentation] Demonstration of waveguide optical device with negative-refractive-index layer2010

    • Author(s)
      T.Amemiya
    • Organizer
      Technical Report of IEICE
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2010-01-29
    • Related Report
      2009 Annual Research Report
  • [Presentation] Optical Injection Locking of Distributed Reflector Lasers with Wirelike Active Regions2010

    • Author(s)
      S.Lee
    • Organizer
      Technical Report of IEICE
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2010-01-28
    • Related Report
      2009 Annual Research Report
  • [Presentation] InP/InGaAs composite channel MOSFET with Al_2O_3 gate dielectric2010

    • Author(s)
      T.Kanazawa
    • Organizer
      IEICE Technical Report of meeting on Electron Devices
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-01-14
    • Related Report
      2009 Annual Research Report
  • [Presentation] Deviation from Proportional Relationship Between Emitter Charging Time and Inverse Current of Heterojunction Bipolar Transistors Operating at High Current Density2010

    • Author(s)
      M.Yamada
    • Organizer
      IEICE Technical Report of meeting on Electron Devices
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-01-14
    • Related Report
      2009 Annual Research Report
  • [Presentation] Continuous Wave Operation of GaInAsP/InP Thin Film Llateral Current Injection Lasers on SI-InP2009

    • Author(s)
      T.Okumura
    • Organizer
      Technical Report of IEICE
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2009-12-11
    • Related Report
      2009 Annual Research Report
  • [Presentation] Design of left-handed light controlling device for optical frequency2009

    • Author(s)
      T.Amemiya
    • Organizer
      Technical Report of IEICE
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2009-12-11
    • Related Report
      2009 Annual Research Report
  • [Presentation] Resonant Tunneling Diodes for Terahertz Oscillators at Room Temperature2009

    • Author(s)
      M.Asada
    • Organizer
      Int.Workshop on Terahertz Technology
    • Place of Presentation
      Osaka, Japan
    • Year and Date
      2009-12-02
    • Related Report
      2009 Annual Research Report
  • [Presentation] Theoretical Study of Antenna Integrated NDR-DCT Oscillator for Variable Oscillation Frequency in THz Band2009

    • Author(s)
      K.Furuya
    • Organizer
      Int.Workshop on Terahertz Technology
    • Place of Presentation
      Osaka, Japan
    • Year and Date
      2009-12-02
    • Related Report
      2009 Annual Research Report
  • [Presentation] Vertical InGaAs FET with hetero-launcher and undoped channel2009

    • Author(s)
      Y.Miyamoto
    • Organizer
      International Symposium on Advanced Nanodevices and Nanotechnology(ISANN)
    • Place of Presentation
      Maui, HI, USA
    • Year and Date
      2009-12-02
    • Related Report
      2009 Annual Research Report
  • [Presentation] Resonant Tunneling Diodes Oscillating at Around 900GHz with Spike Doping Structures for Low Bias Voltage Operation2009

    • Author(s)
      K.Sawada
    • Organizer
      Int.Workshop on Terahertz Technology
    • Place of Presentation
      Osaka, Japan
    • Year and Date
      2009-12-01
    • Related Report
      2009 Annual Research Report
  • [Presentation] Resonant Tunneling Diode Terahertz(0.8-0.9THz)Oscillators with Spike Doping for Low Voltage Operation2009

    • Author(s)
      K.Sawada
    • Organizer
      IEICE Technical Report on Electron Device Meeting
    • Place of Presentation
      Osaka, Japan
    • Year and Date
      2009-11-30
    • Related Report
      2009 Annual Research Report
  • [Presentation] Left-handed Light Controlling Device for Optical Frequency2009

    • Author(s)
      T.Amemiya
    • Organizer
      Int.Symp.On Quantum Nanophotonics and Nanoelectronics(ISQNN-2009)
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2009-11-20
    • Related Report
      2009 Annual Research Report
  • [Presentation] Improved Quantum Efficiency of Lateral Current Injection Type Fabry-Perot Lasers2009

    • Author(s)
      H.Ito
    • Organizer
      Int.Symposium on Quantum Nanophotonics and Nanoelectronics
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2009-11-19
    • Related Report
      2009 Annual Research Report
  • [Presentation] Athermal Wavelength Property of Si-Slot Ring Resonator Embedded with Benzocyclobutene2009

    • Author(s)
      Y.Atsumi
    • Organizer
      Technical Meeting of IEICE
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2009-11-18
    • Related Report
      2009 Annual Research Report
  • [Presentation] Surface Activated Bonding of InP/Si Structure and Its Photoluminescence Characterization2009

    • Author(s)
      S.Kondo
    • Organizer
      Technical Meeting of IEICE
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2009-11-18
    • Related Report
      2009 Annual Research Report
  • [Presentation] Lateral Current Injection Lasers for Membrane Semiconductor Light Sources toward Optical Interconnection2009

    • Author(s)
      T.Okumura
    • Organizer
      Technical Meeting of IEICE
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2009-11-18
    • Related Report
      2009 Annual Research Report
  • [Presentation] Waveguide Type Lateral Junction Photodiode Toward Membrane Based Photonic Circuit2009

    • Author(s)
      D.Kondo
    • Organizer
      Technical Meeting of IEICE
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2009-11-18
    • Related Report
      2009 Annual Research Report
  • [Presentation] InGaAs/InP MISFET2009

    • Author(s)
      Y.Miyamoto
    • Organizer
      Int.Symposium on Silicon Nano Devices in 2030
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2009-10-14
    • Related Report
      2009 Annual Research Report
  • [Presentation] Resonant Tunneling Diode with Very High Peak Current Density for Terahertz Oscillators2009

    • Author(s)
      A.Teranishi
    • Organizer
      Int.Symposium on Silicon Nano Devices in 2030
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2009-10-13
    • Related Report
      2009 Annual Research Report
  • [Presentation] Fabrication of InP/InGaAs Undoped Channel MOSFET with Selectively Regrown N+-InGaAs Source Region2009

    • Author(s)
      T.Kanazawa
    • Organizer
      2009 Int.Conf.Solid State Devices and Materials(SSDM 2009)
    • Place of Presentation
      Miyagi, Japan
    • Year and Date
      2009-10-07
    • Related Report
      2009 Annual Research Report
  • [Presentation] Detection of Output Power from Sub-THz InP-Based Resonant Tunneling Diode Oscillator Using Ni-InP Schottky Barrier Diode2009

    • Author(s)
      R.Yokoyama
    • Organizer
      Int.Conf.Infrared and Millimeterwave & Terahertz Electronics(IRMMW-THz 2009)
    • Place of Presentation
      Busan, Korea
    • Year and Date
      2009-09-22
    • Related Report
      2009 Annual Research Report
  • [Presentation] High Power THz Oscillators with Offset-fed Slot Antenna and High Current Density Resonant Tunneling Diodes2009

    • Author(s)
      K.Hinata
    • Organizer
      Int.Conf.Infrared and Millimeterwave & Terahertz Electronics(IRMMW-Thz 2009)
    • Place of Presentation
      Busan, Korea
    • Year and Date
      2009-09-22
    • Related Report
      2009 Annual Research Report
  • [Presentation] Fundamental Oscillation up to 915GHz in InGaAs/AlAs Resonant Tunneling Diodes Integrated with Slot Antennas2009

    • Author(s)
      M.Shiraishi
    • Organizer
      Int.Conf.Infrared and Millimeterwave & Terahertz Electronics(IRMMW-THz 2009)
    • Place of Presentation
      Busan, Korea
    • Year and Date
      2009-09-22
    • Related Report
      2009 Annual Research Report
  • [Presentation] BCB埋め込みSiスロット導波路構造を用いた温度無依存波長フィルタ2009

    • Author(s)
      渥美裕樹
    • Organizer
      The 2009 IEICE Society Conf.
    • Place of Presentation
      新潟市
    • Year and Date
      2009-09-15
    • Related Report
      2009 Annual Research Report
  • [Presentation] Athermal Wavelength Property of Si-Slot Ring Resonator Embedded with Benzocyclobutene2009

    • Author(s)
      Y.Atsumi
    • Organizer
      The 6th IEEE Int.Conf.on Group IV Photonics(GFP)
    • Place of Presentation
      San Francisco, USA
    • Year and Date
      2009-09-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] 横方向電流注入型ファブリ・ペローレーザの微分量子効率改善2009

    • Author(s)
      伊藤瞳
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山市
    • Year and Date
      2009-09-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] シリコン上薄膜光回路のための横方向接合導波路型フォトダイオード2009

    • Author(s)
      近藤大介
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山市
    • Year and Date
      2009-09-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] SiO_2細線埋込InP系HBTにおけるCBr_4を使ったin-situエッチング2009

    • Author(s)
      武部直明
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山市
    • Year and Date
      2009-09-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] GaInAs/AlAs共鳴トンネルダイオードの831GHz基本波発振2009

    • Author(s)
      鈴木左文
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山市
    • Year and Date
      2009-09-09
    • Related Report
      2009 Annual Research Report
  • [Presentation] GaInAs/AlAs共鳴トンネルダイオードの面積縮小化による915GHzの基本波発振2009

    • Author(s)
      白石誠人
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山市
    • Year and Date
      2009-09-09
    • Related Report
      2009 Annual Research Report
  • [Presentation] 平放射用テーパードスロットアンテナを集積した共鳴トンネルダイオードサブテラヘルツ発振素子2009

    • Author(s)
      鈴木左文
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山市
    • Year and Date
      2009-09-09
    • Related Report
      2009 Annual Research Report
  • [Presentation] Ni-InPショットキーバリアダイオードによる550GHz共鳴トンネルダイオード出力のヘテロダイン検出2009

    • Author(s)
      辛島宏一
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山市
    • Year and Date
      2009-09-09
    • Related Report
      2009 Annual Research Report
  • [Presentation] 縦型InGaAs-MISFETの試作2009

    • Author(s)
      楠崎智樹
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山市
    • Year and Date
      2009-09-08
    • Related Report
      2009 Annual Research Report
  • [Presentation] ヘテロランチャと真性チャネルを有する縦型InGaAs-MISFETの高駆動能力動作2009

    • Author(s)
      齋藤尚史
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山市
    • Year and Date
      2009-09-08
    • Related Report
      2009 Annual Research Report
  • [Presentation] 再成長ソースを有するアンドープチャネルInP/InGaAs MOSFETの電流特性2009

    • Author(s)
      若林和也
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山市
    • Year and Date
      2009-09-08
    • Related Report
      2009 Annual Research Report
  • [Presentation] HBTにおける超高速動作時エミッタ充電時間の理論的解析2009

    • Author(s)
      山田真之
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山市
    • Year and Date
      2009-09-08
    • Related Report
      2009 Annual Research Report
  • [Presentation] 超薄層InAlP/InGaAsヘテロ接合のMOVPE成長と超高速電子デバイスへの応用2009

    • Author(s)
      杉山弘樹
    • Organizer
      IEE of Japan(Special Session on Compound Semiconductor Electron Devices for More Moore More than Moore)
    • Place of Presentation
      徳島市
    • Year and Date
      2009-09-04
    • Related Report
      2009 Annual Research Report
  • [Presentation] MOVPE再成長n^+-ソースを有するIII-V族高移動度チャネルMOSFET2009

    • Author(s)
      金澤徹
    • Organizer
      IEE of Japan(Special Session on Compound Semiconductor Electron Devices for More Moore More than Moore)
    • Place of Presentation
      徳島市
    • Year and Date
      2009-09-04
    • Related Report
      2009 Annual Research Report
  • [Presentation] レート方程式によるAlGaInAs長波長帯レーザトランジスタ動作解析2009

    • Author(s)
      白尾瑞基
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山市
    • Year and Date
      2009-09-02
    • Related Report
      2009 Annual Research Report
  • [Presentation] Sub-Terahertz Resonant Tunneling Diode Osillators Integrated with Tapered Slot Antennas for Horizontal Radiation2009

    • Author(s)
      S.Suzuki
    • Organizer
      Topical Workshop on Heterostructure Materials(TWHM 2009)
    • Place of Presentation
      Nagano, Japan
    • Year and Date
      2009-08-28
    • Related Report
      2009 Annual Research Report
  • [Presentation] In-situ Etching in MOVPE for Thin Collector of InP HBT with Buried SiO_2 Wire2009

    • Author(s)
      Y.Miyamoto
    • Organizer
      Topical Workshop on Heterostructure Materials(TWHM 2009)
    • Place of Presentation
      Nagano, Japan
    • Year and Date
      2009-08-26
    • Related Report
      2009 Annual Research Report
  • [Presentation] Monte Carlo Analysis of Base Transit Times of InP/Gaines Heterojunction Bipolar Transistors with Ultrathin Bases2009

    • Author(s)
      T.Uesawa
    • Organizer
      Topical Workshop on Heterostructure Materials(TWHM 2009)
    • Place of Presentation
      Nagano, Japan
    • Year and Date
      2009-08-26
    • Related Report
      2009 Annual Research Report
  • [Presentation] High External Feedback Tolerance of Distributed Reflector Lasers with Wirelike Active Regions2009

    • Author(s)
      S.Lee
    • Organizer
      Int.Nano-Optoelectronics Workshop 2009(i-NOW 2009)
    • Place of Presentation
      Stockholm, Sweden, Berlin, Germany
    • Year and Date
      2009-08-12
    • Related Report
      2009 Annual Research Report
  • [Presentation] Analysis of antenna integrated NDR-DCT oscillator for variable oscillation frequency in THz band2009

    • Author(s)
      K.Furuya
    • Organizer
      Int.Conf.Modulated Semiconductor Structures(MSS-14)
    • Place of Presentation
      Kobe, Japan
    • Year and Date
      2009-07-16
    • Related Report
      2009 Annual Research Report
  • [Presentation] Sub-Terahertz-Terahertz Oscillating resonant Tunneling Diode2009

    • Author(s)
      S.Suzuki
    • Organizer
      Technical Report on Silicon Nanodevice Integration Technology, IEE of Japan
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2009-07-15
    • Related Report
      2009 Annual Research Report
  • [Presentation] InGaAs/InP MISFET with epitaxially grown source2009

    • Author(s)
      Y.Miyamoto
    • Organizer
      2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD)
    • Place of Presentation
      Busan, Korea
    • Year and Date
      2009-06-25
    • Related Report
      2009 Annual Research Report
  • [Presentation] Evaluation of collector current spreading of InGaAs SHBT with 75-nm-thick collector2009

    • Author(s)
      Y.Miyamoto
    • Organizer
      2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD)
    • Place of Presentation
      Busan, Korea
    • Year and Date
      2009-06-25
    • Related Report
      2009 Annual Research Report
  • [Presentation] High Optical Feedback-Tolerance of Distributed Reflector Lasers with Wire-like Active Regions for High Speed Isolator-Free Operation2009

    • Author(s)
      S.Lee
    • Organizer
      Conf.on Lasers and Electro Optics/Int.Quantum Electronics Conf.(CLEO/IQEC) 2009
    • Place of Presentation
      Baltimore, USA
    • Year and Date
      2009-06-19
    • Related Report
      2009 Annual Research Report
  • [Presentation] In-situ etching by CBr_4 in InP heterojunction bipolar transistors with buried SiO_2 wire2009

    • Author(s)
      N.Takebe
    • Organizer
      IEICE Technical Report of meeting on Electron Devices
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2009-06-12
    • Related Report
      2009 Annual Research Report
  • [Presentation] Subterahertz-Terahertz Room-Temperature Oscillators with Resonant Tunneling Diodes2009

    • Author(s)
      M.Asada
    • Organizer
      Japan.Appl.Phys.Soc., Light Sensing Technology Meeting
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2009-06-09
    • Related Report
      2009 Annual Research Report
  • [Presentation] Progress in Distributed-Reflector(DR)Lasers with Wirelke Active Regions2009

    • Author(s)
      T.Shindo
    • Organizer
      Technical Report of IEICE
    • Place of Presentation
      金沢市
    • Year and Date
      2009-05-22
    • Related Report
      2009 Annual Research Report
  • [Presentation] Properties of High Index-Contrast Wired GaInAsP Waveguides with Benzocyclobutene on Si Substrate2009

    • Author(s)
      H.Enomoto
    • Organizer
      The 21st Int.Conf.on Indium Phosphide and Related Materials (IPRM 2009)
    • Place of Presentation
      Newport Beach, USA
    • Year and Date
      2009-05-14
    • Related Report
      2009 Annual Research Report
  • [Presentation] Ultra-Thin InAlP/InGaAs Heterojunctions Grown by Metal-Organic Vapor-Phase Epitaxy2009

    • Author(s)
      H.Sugiyama
    • Organizer
      The 21st Int.Conf.Indium Phosphide and Related Materials(IPRM2009)
    • Place of Presentation
      Newport Beach, USA
    • Year and Date
      2009-05-13
    • Related Report
      2009 Annual Research Report
  • [Presentation] Room-Temperature CW Operation of Lateral Current Injection Lasers with Thin Film Lateral Cladding Layers2009

    • Author(s)
      T.Okumura
    • Organizer
      The 21st Int.Conf.on Indium Phosphide and Related Materials(IPRM 2009)
    • Place of Presentation
      Newport Beach, USA
    • Year and Date
      2009-05-13
    • Related Report
      2009 Annual Research Report
  • [Presentation] III-V/SOI Heterogeneous Photonic integrated Devices for Optical Interconnection in LSI2009

    • Author(s)
      N.Nishiyama
    • Organizer
      The 21st Int.Conf.on Indium Phosphide and Related Materials(IPRM 2009)
    • Place of Presentation
      Newport Beach, USA
    • Year and Date
      2009-05-13
    • Related Report
      2009 Annual Research Report
  • [Presentation] Vertical InGaAs MOSFWT with Hetero-Launcher and Undoped Channel2009

    • Author(s)
      H.Saito
    • Organizer
      The 21st Int.Conf.Indium Phosphide and Related Materials(IPRM2009)
    • Place of Presentation
      Newport Beach, USA
    • Year and Date
      2009-05-13
    • Related Report
      2009 Annual Research Report
  • [Presentation] InP/InGaAs-channel MOSFET with MOVPE Selective Regrown Source2009

    • Author(s)
      T.Kanazawa
    • Organizer
      The 21st Int.Conf.Indium Phosphide and Related Materials(IPRM2009)
    • Place of Presentation
      Newport Beach, USA
    • Year and Date
      2009-05-13
    • Related Report
      2009 Annual Research Report
  • [Presentation] Fundamental Oscillation up to 831GHz in GaInAs/AlAs Resonant Tunneling Diode2009

    • Author(s)
      S.Suzuki
    • Organizer
      The 21st Int.Conf.Indium Phosphide and Related Materials(IPRM2009)
    • Place of Presentation
      Newport Beach, USA
    • Year and Date
      2009-05-12
    • Related Report
      2009 Annual Research Report
  • [Presentation] Lateral Current Injection Type GaInAsP/InP DFB Lasers on SI-InP Substrate2009

    • Author(s)
      T.Okumura
    • Organizer
      The 21st Int.Conf.on Indium Phosphide and Related Materials(IPRM 2009)
    • Place of Presentation
      Newport Beach, USA
    • Year and Date
      2009-05-12
    • Related Report
      2009 Annual Research Report
  • [Presentation] Low-threshold and High-efficiency Operation of Distributed Reflector Laser with Wirelike Active Regions by Reduced Waveguide Loss2009

    • Author(s)
      S.Lee
    • Organizer
      The 21st Int.Conf.on Indium Phosphide and Related Materials(IPRM 2009)
    • Place of Presentation
      Newport Beach, USA
    • Year and Date
      2009-05-12
    • Related Report
      2009 Annual Research Report
  • [Presentation] 超薄層InAlP/InGaAsヘテロ接合のMOVPE成長2009

    • Author(s)
      杉山弘樹
    • Organizer
      第56回応用物理学会関係連合講演会
    • Place of Presentation
      つくば市
    • Year and Date
      2009-04-02
    • Related Report
      2009 Annual Research Report
  • [Presentation] Si上BCB貼付型強光閉じ込めGaInAsP細線導波路の特性2009

    • Author(s)
      榎本晴基
    • Organizer
      第56回応用物理学会関係連合講演会
    • Place of Presentation
      つくば市
    • Year and Date
      2009-04-02
    • Related Report
      2009 Annual Research Report
  • [Presentation] 半絶縁性基板上の横方向注入型DFBレーザ2009

    • Author(s)
      奥村忠嗣
    • Organizer
      第56回応用物理学会関係連合講演会
    • Place of Presentation
      つくば市
    • Year and Date
      2009-04-01
    • Related Report
      2009 Annual Research Report
  • [Presentation] 横方向電流注入型ファブリ・ペローレーザの室温連続動作2009

    • Author(s)
      奥村忠嗣
    • Organizer
      第56回応用物理学会関係連合講演会
    • Place of Presentation
      つくば市
    • Year and Date
      2009-04-01
    • Related Report
      2009 Annual Research Report
  • [Presentation] BCB埋め込Siスロット導波路による波長フィルタの温度無依存化の検討2009

    • Author(s)
      渥美裕樹
    • Organizer
      第56回応用物理学会関係連合講演会
    • Place of Presentation
      つくば市
    • Year and Date
      2009-04-01
    • Related Report
      2009 Annual Research Report
  • [Presentation] 細線状活性層を有する分布反射型(DR)レーザの低しきい値・高効率動作2009

    • Author(s)
      進藤隆彦
    • Organizer
      第56回応用物理学会関係連合講演会
    • Place of Presentation
      つくば市
    • Year and Date
      2009-04-01
    • Related Report
      2009 Annual Research Report
  • [Presentation] Resonant Tunneling Diodes for Terahertz Oscillators at Room Temperature2009

    • Author(s)
      S.Suzuki
    • Organizer
      Japan.Appl.Phys.Soc., Applied Solid State Physics Division
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2009-01-29
    • Related Report
      2009 Annual Research Report
  • [Presentation] Fabrication of vertical InGaAs channel MISFET with heterostructure launcher and undoped channel2009

    • Author(s)
      H.Saito
    • Organizer
      Int.Symposium on Silicon Nano Devices in 2030
    • Place of Presentation
      Tokyo, Japan
    • Related Report
      2009 Annual Research Report
  • [Presentation] InP/In_<0.53>Ga_<0.47>As composite channel n-MOSFETwith heavily doped regrown source/drain structure2009

    • Author(s)
      K.Wakabayashi
    • Organizer
      Int.Symposium on Silicon Nano Devices in 2030
    • Place of Presentation
      Tokyo, Japan
    • Related Report
      2009 Annual Research Report
  • [Presentation] Room-Temperature THz Oscillators using Resonant Tunneling Diodes

    • Author(s)
      M. Asada and S. Suzuki
    • Organizer
      Int. Workshop. Optical THz Science and Tech. (OTST2013)
    • Place of Presentation
      京都
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Room-Temperature THz Oscillators Using Resonant Tunneling Diodes

    • Author(s)
      M. Asada and S. Suzuki
    • Organizer
      Int. Symp. Microwave/Terahertz Science and Application (MTSA 2013)
    • Place of Presentation
      上海
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Room-Temperature Terahertz Oscillation of Resonant Tunneling Diodes

    • Author(s)
      M. Asada and S. Suzuki
    • Organizer
      SPIE Int. Symp. Optics and Photonics, Terahertz Emitters, Receivers, and Applications IV
    • Place of Presentation
      San Diego (USA)
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Compact THz Oscillators with Resonant Tunneling Diodes and Application to High-Capacity Wireless Communications

    • Author(s)
      M. Asada and S. Suzuki
    • Organizer
      Int. Conf. on Applied Electromagnetics and Communications
    • Place of Presentation
      Dubrovnik (Croatia)
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Resonant Tunneling Diodes for Room- Temperature Terahertz Oscillators

    • Author(s)
      M. Asada and S. Suzuki
    • Organizer
      Asia Pacific Microwave Conf. (APMC2013)
    • Place of Presentation
      Seoul (Korea)
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Terahertz Oscillators using Resonant Tunneling Diodes with InAlGaAs/InP Composite Collector

    • Author(s)
      R. Sogabe, K. Shizuno, H. Kanaya, S. Suzuki, M. Asada, H. Sugiyama, and H. Yokoyama
    • Organizer
      Int. Conf. Indium Phosphide and Related Materials (IPRM2013)
    • Place of Presentation
      神戸
    • Related Report
      2013 Annual Research Report
  • [Presentation] Proposal and Fabrication of Resonant-Tunneling-Diode Terahertz Oscillator with Structure for High Frequency Modulation

    • Author(s)
      K. Minoguchi, K. Okada, S. Suzuki, and M. Asada
    • Organizer
      Int. Conf. Infrared, Millimeter, and THz Waves (IRMMW2013)
    • Place of Presentation
      Mainz (Germany)
    • Related Report
      2013 Annual Research Report
  • [Presentation] Spontaneous Emission of Terahertz Waves from Resonant Tunneling Diodes

    • Author(s)
      M. Asada, H. Kanaya, and S. Suzuki
    • Organizer
      International Symposium on Advanced Nanodevices and Nanotechnology (ISANN2013)
    • Place of Presentation
      Kauai (USA)
    • Related Report
      2013 Annual Research Report
  • [Presentation] Terahertz Oscillating Resonant Tunneling Diode with Slot-Fed Patch Antenna

    • Author(s)
      K. Okada, S. Suzuki, and M. Asada
    • Organizer
      Int. Symp. Terahertz Nanoscience
    • Place of Presentation
      大阪
    • Related Report
      2013 Annual Research Report
  • [Presentation] Room-temperature THz Oscillators with Resonant Tunneling Diodes

    • Author(s)
      S. Suzuki and M. Asada
    • Organizer
      Symposium on Communication, Microelectronics, Optoelectronics, and Sensors Emerging Technologies Research
    • Place of Presentation
      Grenoble (France)
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Room-Temperature THz Oscillators Using Resonant Tunneling Diodes

    • Author(s)
      M. Asada
    • Organizer
      Optical Terahertz Science and Technology
    • Place of Presentation
      京都テルサ(京都府)
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] Increase in Output Power using Thin-Well Resonant Tunneling Diodes

    • Author(s)
      H. Kanaya
    • Organizer
      3rd EOS Topical Meeting THz Science & Tech.
    • Place of Presentation
      プラハ(チェコ)
    • Related Report
      2012 Annual Research Report
  • [Presentation] Fundamental Oscillation up to 1.31 THz Using Thin-Well Resonant Tunneling Diodes

    • Author(s)
      H. Kanaya
    • Organizer
      Indium Phosphide Related Materials (IPRM 2012)
    • Place of Presentation
      サンタバーバラ(USA)
    • Related Report
      2012 Annual Research Report
  • [Presentation] High-Power Operation of Terahertz Oscillators with Resonant Tunneling Diodes Using Offset-Fed Slot Antennas and Array Configuration

    • Author(s)
      M. Shiraishi
    • Organizer
      Infrared and Millimeter Waves & Terahertz Electronics (IRMMW-THz 2012)
    • Place of Presentation
      ウロンゴン(オーストラリア)
    • Related Report
      2012 Annual Research Report
  • [Presentation] Room-Temperature THz Oscillators Using Resonant Tunneling Diodes with Reduced Delay Times

    • Author(s)
      M. Asada
    • Organizer
      Frontiers THz Tech. (FTT 2012)
    • Place of Presentation
      東大寺文化会館(奈良県)
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] Frequency increase in terahertz oscillating resonant tunneling diodes with keeping bias voltage by deep- and thin-well structure

    • Author(s)
      H. Kanaya
    • Organizer
      Frontiers THz Tech. (FTT 2012)
    • Place of Presentation
      東大寺文化会館(奈良県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] Dependence of bit error rate on received power in terahertz wireless communication using resonant-tunneling-diode oscillator

    • Author(s)
      S. Suzuki
    • Organizer
      Frontiers THz Tech. (FTT 2012)
    • Place of Presentation
      東大寺文化会館(奈良県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] Compact Optical/THz Signal Converter using Photo-generated Carrier Gate in THz Waveguide

    • Author(s)
      D. Take
    • Organizer
      IEEE Photonics Conference (IPC 12)
    • Place of Presentation
      バーリンガム(USA)
    • Related Report
      2012 Annual Research Report
  • [Presentation] 光励起キャリアゲート型光-テラヘルツ信号直接変換器の信号特性の検討

    • Author(s)
      武大助
    • Organizer
      応用物理学会講演会
    • Place of Presentation
      愛媛大学(愛媛県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] 厚いコレクタスペーサと狭井戸構造を持つ共鳴トンネルダイオードによる1.31THz 基本波発振

    • Author(s)
      金谷英敏
    • Organizer
      応用物理学会講演会
    • Place of Presentation
      愛媛大学(愛媛県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] 電子の遅延時間短縮による共鳴トンネルダイオードのテラヘルツ発振周波数上昇

    • Author(s)
      金谷英敏
    • Organizer
      応用物理学会講演会(講演奨励賞受賞記念講演)
    • Place of Presentation
      神奈川工科大学(神奈川県)
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] InAlGaAs/InPコンポジットコレクタを持つ共鳴トンネルダイオードを用いたテラヘルツ発振素子

    • Author(s)
      曽我部陸
    • Organizer
      応用物理学会講演会
    • Place of Presentation
      神奈川工科大学(神奈川県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] 電子デバイスを用いたテラヘルツ発生

    • Author(s)
      鈴木左文
    • Organizer
      学術振興会シリコン超集積化システム第165委員会
    • Place of Presentation
      弘済会館(東京都)
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] 共鳴トンネルダイオード発振素子を用いたテラヘルツ無線伝送における誤り率の受信電力依存性

    • Author(s)
      鈴木左文
    • Organizer
      電子情報通信学会テラヘルツ技術研究会
    • Place of Presentation
      NICT沖縄電磁波技術センター(沖縄県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] 量子井戸の薄層化と深化による共鳴トンネルダイオードのテラヘルツ発振周波数上昇

    • Author(s)
      金谷英敏
    • Organizer
      電子情報通信学会電子デバイス研究会
    • Place of Presentation
      東北大学電気通信研究所(宮城県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] 電子デバイスによるテラヘルツギャップ開拓-共鳴トンネルダイオード発振素子とその無線通信応用

    • Author(s)
      鈴木左文
    • Organizer
      電気学会先端光・量子発生利用技術専門委員会第4回委員会/研究会
    • Place of Presentation
      理化学研究所仙台支所(宮城県)
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] Improved Quantum Efficiency of GaInAsP/InP Top Air-Clad Lateral Current Injection Lasers

    • Author(s)
      M. Futami
    • Organizer
      2012 IEEE Optical Int. Conf. (OIC-2012)
    • Place of Presentation
      サンタフェ(USA)
    • Related Report
      2012 Annual Research Report
  • [Presentation] Amorphous Silicon Grating-Type Layer-to-Layer Couplers for Intra-Chip Connection

    • Author(s)
      J. Kang
    • Organizer
      2012 IEEE Optical Int. Conf. (OIC-2012)
    • Place of Presentation
      サンタフェ(USA)
    • Related Report
      2012 Annual Research Report
  • [Presentation] 10 Gb/s Operation of GaInAs/InP Top Air-Clad. Lateral Junction Waveguide-type Photodiode

    • Author(s)
      T. Shindo
    • Organizer
      2012 IEEE Optical Int. Conf. (OIC-2012)
    • Place of Presentation
      サンタフェ(USA)
    • Related Report
      2012 Annual Research Report
  • [Presentation] Compact InP-based 1×2 MMI Splitter on Si Substrate with BCB Wafer Bonding for Membrane Photonic Circuits

    • Author(s)
      J. Lee
    • Organizer
      The 24th Int. Conf. Indium Phosphide and Related Materials (IPRM-2012)
    • Place of Presentation
      サンタバーバラ(USA)
    • Related Report
      2012 Annual Research Report
  • [Presentation] Low-Threshold Operation of LCI-Membrane-DFB Lasers with Be-doped GaInAs Contact Layer

    • Author(s)
      M. Futami
    • Organizer
      The 24th Int. Conf. Indium Phosphide and Related Materials (IPRM-2012)
    • Place of Presentation
      サンタバーバラ(USA)
    • Related Report
      2012 Annual Research Report
  • [Presentation] Thermal Analysis of Self-Heating Effect in GaInAsP/InP Membrane DFB Laser on Si Substrate

    • Author(s)
      K. Doi
    • Organizer
      2012 IEEE Photonics Conference (IPC-2012)
    • Place of Presentation
      バーリンガム(USA)
    • Related Report
      2012 Annual Research Report
  • [Presentation] AlInAs Selective Oxidation for GaInAsP/Si Hybrid Semiconductor Laserusing Surface Activated Bonding

    • Author(s)
      Y. Hayashi
    • Organizer
      2012 IEEE Photonics Conference (IPC-2012)
    • Place of Presentation
      バーリンガム(USA)
    • Related Report
      2012 Annual Research Report
  • [Presentation] Room-Temperature Continuous-Wave Operation of a 1.3-μm npn-AlGaInAs/InP Transistor Laser

    • Author(s)
      N. Sato
    • Organizer
      The 23rd IEEE Int. Semiconductor Laser Conf. (ISLC-2012)
    • Place of Presentation
      バーリンガム(USA)
    • Related Report
      2012 Annual Research Report
  • [Presentation] Modulation Bandwidth of GaInAsP/InP Lateral-Current-Injection Membrane Laser

    • Author(s)
      T. Shindo
    • Organizer
      The 23rd IEEE Int. Semiconductor Laser Conf. (ISLC-2012)
    • Place of Presentation
      サンディエゴ(USA)
    • Related Report
      2012 Annual Research Report
  • [Presentation] Permeability-controlled Optical Modulator with Tri-gate Metamaterial

    • Author(s)
      T. Amemiya
    • Organizer
      The 4th Int. Topical Meeting on Nanophotonics and Metamaterials (NANOMETA-2013)
    • Place of Presentation
      ゼーフェルト(チロル、オーストリア)
    • Related Report
      2012 Annual Research Report
  • [Presentation] Multi-stacked silicon wire waveguides and couplers toward 3D optical interconnects

    • Author(s)
      J. Kang
    • Organizer
      SPIE Photonics West 2013 (OPTO-2013)
    • Place of Presentation
      サンノゼ(USA)
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] GaInAsP横方向接合型薄膜フォトダイオードの特性評価

    • Author(s)
      山原 佳晃
    • Organizer
      電子情報通信学会 2012年ソサイエティ大会
    • Place of Presentation
      富山大学(富山県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] 金属ミラー付き多層アモルファスシリコン細線導波路間のグレーティングカプラ

    • Author(s)
      姜 晙炫
    • Organizer
      電子情報通信学会 2012年ソサイエティ大会
    • Place of Presentation
      富山大学(富山県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] AlInAs酸化狭窄層を有するGaInAsP/SiハイブリッドSOA多機能集積のための構造設計

    • Author(s)
      福田 渓太
    • Organizer
      電子情報通信学会 2012年ソサイエティ大会
    • Place of Presentation
      富山大学(富山県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] InP系横接合型半導体薄膜能動光素子と細線光導波路のテーパー結合

    • Author(s)
      李 智恩
    • Organizer
      電子情報通信学会 2012年ソサイエティ大会
    • Place of Presentation
      富山大学(富山県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] Si導波路を用いた波長フィルタを有するAlInAs酸化狭窄型GaInAsP/Siハイブリッドレーザの検討

    • Author(s)
      林 侑介
    • Organizer
      Technical Report of IEICE
    • Place of Presentation
      リゾートピア熱海(静岡県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] GaInAsP/InP半導体薄膜DFBレーザの電流注入動作と熱特性解析

    • Author(s)
      土居 恭平
    • Organizer
      Technical Report of IEICE
    • Place of Presentation
      東北大学(宮城県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] 表面活性化接合を用いたGaInAsP/Siハイブリッドファブリペローレーザ

    • Author(s)
      林 侑介
    • Organizer
      第73回秋季応用物理学会学術講演会
    • Place of Presentation
      愛媛大学(愛媛県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] 紫外線照射を用いた温度無依存シリコンスロットリング共振器の波長トリミング

    • Author(s)
      サイファー たけし
    • Organizer
      第73回秋季応用物理学会学術講演会
    • Place of Presentation
      愛媛大学(愛媛県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] Beドープp-GaInAsコンタクト層を有する薄膜DFBレーザのしきい値低減

    • Author(s)
      二見 充輝
    • Organizer
      第73回秋季応用物理学会学術講演会
    • Place of Presentation
      愛媛大学(愛媛県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] オンチップ光配線に向けた半導体薄膜レーザの熱特性に関する検討

    • Author(s)
      土居 恭平
    • Organizer
      第73回秋季応用物理学会学術講演会
    • Place of Presentation
      愛媛大学(愛媛県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] 透磁率の制御によるInP 系導波路型光変調器

    • Author(s)
      雨宮 智宏
    • Organizer
      第73回秋季応用物理学会学術講演会
    • Place of Presentation
      愛媛大学(愛媛県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] 金属側壁層を有するInP系プラズモニック導波路の曲げ特性評価

    • Author(s)
      村井 英淳
    • Organizer
      第73回秋季応用物理学会学術講演会
    • Place of Presentation
      愛媛大学(愛媛県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] GaInAsP/InP横方向電流注入型半導体薄膜レーザの低しきい値動作化

    • Author(s)
      進藤 隆彦
    • Organizer
      Technical Report of IEICE
    • Place of Presentation
      機械振興会館(東京都)
    • Related Report
      2012 Annual Research Report
  • [Presentation] 窒素プラズマ活性化を用いたIII-V/Si直接貼付とそのハイブリッドレーザへの応用

    • Author(s)
      林 侑介
    • Organizer
      Technical Report of IEICE
    • Place of Presentation
      機械振興会館(東京都)
    • Related Report
      2012 Annual Research Report
  • [Presentation] オンチップ光回路のためのBCB貼り付けを用いたSi基板上InP薄膜受動素子の特性

    • Author(s)
      李 智恩
    • Organizer
      Technical Report of IEICE
    • Place of Presentation
      機械振興会館(東京都)
    • Related Report
      2012 Annual Research Report
  • [Presentation] GaInAsP/SiハイブリッドSOA多機能集積のためのテーパー構造設計

    • Author(s)
      福田 渓太
    • Organizer
      電子情報通信学会 2013年総合大会
    • Place of Presentation
      岐阜大学(岐阜県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] 金属ミラー付き多層アモルファスシリコン導波路間グレーティングカプラ

    • Author(s)
      姜 晙炫
    • Organizer
      電子情報通信学会 2013年総合大会
    • Place of Presentation
      岐阜大学(岐阜県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] GaInAs/InP半導体上メタマテリアルの電圧印加による共振周波数変化

    • Author(s)
      明賀 聖慈
    • Organizer
      第60回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(神奈川県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] SiO2マスクを用いた量子井戸無秩序化における多重量子井戸のバンドギャップ波長変化

    • Author(s)
      山原 佳晃
    • Organizer
      第60回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(神奈川県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] 微細金属構造をもつ導波路型光デバイスにおける相互作用距離の解析

    • Author(s)
      雨宮 智宏
    • Organizer
      第60回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(神奈川県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] GaInAsP/InP半導体薄膜レーザの室温連続動作

    • Author(s)
      土居 恭平
    • Organizer
      第60回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(神奈川県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] 半導体薄膜光集積に向けたOMVPEによるGaInAsPのButt-Joint再成長

    • Author(s)
      井上 大輔
    • Organizer
      第60回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(神奈川県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] オンチップ光配線に向けた半導体薄膜レーザの低消費電力構造の検討

    • Author(s)
      進藤 隆彦
    • Organizer
      第60回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(神奈川県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] GaInAsP/InP半導体薄膜レーザの低消費電力動作に向けた構造設計

    • Author(s)
      平谷 拓生
    • Organizer
      第60回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(神奈川県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] Vertical InGaAs MOSFET with HfO2 gate

    • Author(s)
      J. Hirai
    • Organizer
      2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)
    • Place of Presentation
      沖縄県青年会館(沖縄県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] 71 mV/dec of Sub-Threshold Slope in Vertical Tunnel Field-Effect Transistors with GaAsSb/InGaAs Heterostructure

    • Author(s)
      M. Fujimatsu
    • Organizer
      24th Int. Conf. Indium Phosphide and Related Materials (IPRM 2012)
    • Place of Presentation
      サンタバーバラ(USA)
    • Related Report
      2012 Annual Research Report
  • [Presentation] InP HBT with 55-nm-wide Emitter and Relationship between Emitter Width and Current Density

    • Author(s)
      K. Tanaka
    • Organizer
      24th Int. Conf. Indium Phosphide and Related Materials (IPRM 2012)
    • Place of Presentation
      サンタバーバラ(USA)
    • Related Report
      2012 Annual Research Report
  • [Presentation] Analysis on trade-off between electric field and gate-drain capacitance for GaN HEMT by T-CAD simulation

    • Author(s)
      Y. Yamaguchi
    • Organizer
      2012 International Conference on. Solid State Devices and Materials (SSDM 2012)
    • Place of Presentation
      京都国際会議場(京都府)
    • Related Report
      2012 Annual Research Report
  • [Presentation] Mechanism study of gate leakage current for AlGaN/GaN HEMT structure under high reverse bias by TSB model and TCAD simulation

    • Author(s)
      T. Oishi
    • Organizer
      2012 International Conference on. Solid State Devices and Materials (SSDM 2012)
    • Place of Presentation
      京都国際会議場(京都府)
    • Related Report
      2012 Annual Research Report
  • [Presentation] High Open Circuit Voltage Gain in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor using Heavily Doped Drain Region and Narrow Channel Mesa

    • Author(s)
      M. Kashiwano
    • Organizer
      2012 International Conference on. Solid State Devices and Materials (SSDM 2012)
    • Place of Presentation
      京都国際会議場(京都府)
    • Related Report
      2012 Annual Research Report
  • [Presentation] トランジスタ動作時におけるGaN HEMT ゲートリークのデバイスシミュレーションによる解析

    • Author(s)
      大石敏之
    • Organizer
      電子情報通信学会2012年ソサエティ大会
    • Place of Presentation
      富山大学(富山県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] 55 nm幅エミッタInP HBTおよび電流密度とエミッタ幅の関係

    • Author(s)
      田中啓史
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学(愛媛県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] InGaAs チャネルMOSFET のEOT削減による伝達コンダクタンス向上

    • Author(s)
      佐賀井健
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学(愛媛県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] 半導体ドレイン層及び狭チャネルメサ幅による縦型InGaAsチャネルMIFETの高電圧利得化

    • Author(s)
      柏野壮志
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学(愛媛県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] GaN-HEMTノーマリーオフ化のためのしきい値電圧制御に関する研究

    • Author(s)
      大澤一斗
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学(愛媛県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] Si基板上InGaAs-MOSFETの微細化に関する研究

    • Author(s)
      加藤淳
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学(愛媛県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] GaAsSb/InGaAsヘテロ接合を用いた縦型トンネルFETにおけるサブスレッショルドスロープの改善

    • Author(s)
      藤松基彦
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学(愛媛県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] 超高速トランジスタ技術の現状と展望

    • Author(s)
      宮本恭幸
    • Organizer
      2013年電子情報通信学会総合大会
    • Place of Presentation
      岐阜大学(岐阜県)
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] Si基板上InGaAs-MOSFETの微細化に関する研究

    • Author(s)
      加藤淳
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学(神奈川県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] 半導体ドレイン層及び狭チャネルメサ幅による縦型InGaAsチャネルMISFETの高電圧利得化

    • Author(s)
      柏野壮志
    • Organizer
      IEICE Technical Report of meeting on Electron Devices
    • Place of Presentation
      豊橋技術科学大学(愛知県)
    • Related Report
      2012 Annual Research Report
  • [Presentation] GaAsSb/InGaAs縦型トンネルFET

    • Author(s)
      宮本恭幸
    • Organizer
      IEICE Technical Meeting on Electron Devices
    • Place of Presentation
      京都大学(京都府)
    • Related Report
      2012 Annual Research Report
  • [Book] Resonant tunneling diodes for THz sources", Chapter 7, Handbook of Terahertz Technologies, edited by H.-J. Song and T. Nagatsuma2014

    • Author(s)
      M. Asada and S. Suzuki
    • Publisher
      Pan Stanford Publishing (出版予定)
    • Related Report
      2013 Final Research Report
  • [Book] Handbook of Terahertz Technologies: Devices and Applications (Chapter 7 分担)2014

    • Author(s)
      M. Asada and S. Suzuki
    • Total Pages
      300
    • Publisher
      Pan Stanford Publishing
    • Related Report
      2013 Annual Research Report
  • [Book] グリーンナノテクノロジー, 編集(ナノテクノロジーネットワーク編 集委員会委員)2011

    • Author(s)
      宮本恭幸
    • Total Pages
      217
    • Publisher
      日刊工業新聞社
    • Related Report
      2013 Final Research Report
  • [Book] テラヘルツ波新産業2011

    • Author(s)
      浅田雅洋
    • Total Pages
      6
    • Publisher
      シーエムシー出版
    • Related Report
      2010 Annual Research Report
  • [Book] 培風館2009

    • Author(s)
      浅田雅洋・平野拓一
    • Total Pages
      276
    • Publisher
      電磁気学(電子情報工学ニューコース)
    • Related Report
      2009 Annual Research Report
  • [Remarks]

    • URL

      http://www.pe.titech.ac.jp/AsadaLab/Asada_Lab.html

    • Related Report
      2013 Final Research Report
  • [Remarks]

    • URL

      http://www.pe.titech.ac.jp/Furuya-MiyamotoLab/index.htm

    • Related Report
      2013 Final Research Report
  • [Remarks]

    • URL

      http://www.pe.titech.ac.jp/AraiLab/inind.html

    • Related Report
      2013 Final Research Report
  • [Remarks] 「RTD 素子の性能が大きく向上、室温で1.42THz を発振-テラヘルツ波の用途拡大に道」,日経エレクトロニクス,2014年1月 報道等

    • Related Report
      2013 Final Research Report
  • [Remarks] 「共鳴トンネル構造によるテラヘルツ波の発生とその応用」,科研費NEWS(学振),vol.4, p.8,2012 報道等

    • Related Report
      2013 Final Research Report
  • [Remarks] "Milestone for wi-fi with T-rays",BBC News, 2012年5月16日、報道等

    • Related Report
      2013 Final Research Report
  • [Remarks] "Re-grown source-drain III-V MOSFETs demonstrate higher drain current", Semiconductor Today, 2011年5月 報道等

    • Related Report
      2013 Final Research Report
  • [Remarks] 東工大浅田研究室

    • URL

      http://www.pe.titech.ac.jp/AsadaLab/

    • Related Report
      2013 Annual Research Report
  • [Remarks] 東工大 浅田研究室ホームページ

    • URL

      http://www.pe.titech.ac.jp/AsadaLab/Asada_Lab.html

    • Related Report
      2012 Annual Research Report
  • [Remarks] 荒井・西山研究室

    • URL

      http://www.pe.titech.ac.jp/AraiLab/

    • Related Report
      2012 Annual Research Report
  • [Remarks] 宮本研究室

    • URL

      http://www.pe.titech.ac.jp/Furuya-MiyamotoLab/index.htm

    • Related Report
      2012 Annual Research Report
  • [Remarks]

    • URL

      http://www.pe.titech.ac.jp/AsadaLab/Asada_Lab.html

    • Related Report
      2011 Annual Research Report
  • [Remarks]

    • URL

      http://www.pe.titech.ac.jp/Furuya-MiyamotoLab/index.htm

    • Related Report
      2011 Annual Research Report
  • [Remarks]

    • URL

      http://www.pe.titech.ac.jp/AraiLab/index.html

    • Related Report
      2011 Annual Research Report
  • [Remarks]

    • URL

      http://www.pe.titech.ac.jp/AsadaLab/Asada_Lab.html

    • Related Report
      2010 Annual Research Report
  • [Remarks]

    • URL

      http://www.pe.titech.ac.jp/AsadaLab/Asada_Lab.html

    • Related Report
      2009 Annual Research Report
  • [Patent(Industrial Property Rights)] 共鳴トンネルダイオードおよびテラヘルツ発振器2013

    • Inventor(s)
      杉山弘樹,横山春喜,浅田雅洋,鈴木左文
    • Industrial Property Rights Holder
      日本電信電話株式会社,東京工業大学
    • Industrial Property Rights Type
      特許
    • Acquisition Date
      2013-12-10
    • Related Report
      2013 Final Research Report
  • [Patent(Industrial Property Rights)] 共鳴トンネルダイオードおよびテラヘルツ発振器2012

    • Inventor(s)
      杉山弘樹,鈴木左文,浅田雅洋
    • Industrial Property Rights Holder
      日本電信電話株式会社,東京工業大学
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2012-034749
    • Filing Date
      2012-02-21
    • Related Report
      2013 Final Research Report
  • [Patent(Industrial Property Rights)] 共鳴トンネルダイオードおよびテラヘルツ発振器2012

    • Inventor(s)
      杉山弘樹、鈴木左文、浅田雅洋
    • Industrial Property Rights Holder
      日本電信電話株式会社,東京工業大学
    • Industrial Property Number
      2012-034749
    • Filing Date
      2012-02-21
    • Related Report
      2011 Annual Research Report
  • [Patent(Industrial Property Rights)] 共鳴トンネルダイオードおよびテラヘルツ発振器2009

    • Inventor(s)
      杉山弘樹、横山春喜、浅田雅洋、鈴木左文
    • Industrial Property Rights Holder
      NTT, 東京工業大学
    • Industrial Property Rights Type
      特許
    • Filing Date
      2009-11-26
    • Acquisition Date
      2013-12-10
    • Related Report
      2013 Annual Research Report
  • [Patent(Industrial Property Rights)] 共鳴トンネルダイオードおよびテラヘルツ発振器2009

    • Inventor(s)
      杉山弘樹、横山春喜、浅田雅洋、鈴木左文
    • Industrial Property Rights Holder
      NTT
    • Industrial Property Number
      2009-268458
    • Filing Date
      2009-11-26
    • Related Report
      2009 Annual Research Report
  • [Patent(Industrial Property Rights)] 共鳴トンネルダイオードおよびテラヘルツ発振器

    • Inventor(s)
      杉山弘樹, 横山春喜, 鈴木左文, 浅田雅洋
    • Industrial Property Rights Holder
      日本電信電話株式会社, 東京工業大学
    • Related Report
      2010 Annual Research Report

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Published: 2009-04-01   Modified: 2019-07-29  

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