Applications of nanosiicon ballistic emitter in liquids, gases, and solids
Project/Area Number |
21241037
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Research Category |
Grant-in-Aid for Scientific Research (A)
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Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Microdevices/Nanodevices
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Research Institution | Tokyo University of Agriculture and Technology |
Principal Investigator |
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Co-Investigator(Kenkyū-buntansha) |
BERNARD Gollez 名古屋大学, 大学院・工学研究科, 特任准教授 (40343157)
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Project Period (FY) |
2009 – 2011
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Project Status |
Completed (Fiscal Year 2011)
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Budget Amount *help |
¥20,930,000 (Direct Cost: ¥16,100,000、Indirect Cost: ¥4,830,000)
Fiscal Year 2011: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
Fiscal Year 2010: ¥15,340,000 (Direct Cost: ¥11,800,000、Indirect Cost: ¥3,540,000)
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Keywords | ナノシリコン / 量子閉じ込め / 多重トンネル / 弾道雷子 / 還元効果 / 真空紫外光発生 / 光キャリア増倍 / 量子閉じ込め効果 / 弾道電子放出 / 固体薄膜堆積 / 弾道雷子放出 / 水素生成 / 金属薄膜堆積 |
Research Abstract |
The characteristic functions and their possible applications of nanosilicon ballistic electron emitter were clarified in liquids, gases, and solids. (1) Operation in liquids : Injection of highly reducing electrons into solutions induces thin film deposition of semiconductors(silicon and germanium) and metals. (2) Operation in gases : It was confirmed that internal electronic excitation of Xe molecules emits vacuum-ultraviolet light without discharging. (3) Operation in solids : The underlying physics of avalanche photoconduction observed in nanosilicon diode was made clear by theoretical analyses of ballistic effect.
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Report
(4 results)
Research Products
(152 results)
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[Journal Article] 2/3-inch ultra-high-sensitivity image sensor with active-matrix high-efficiency electron emission device2010
Author(s)
T. Nakada, T. Sato, Y. Matsuba, K. Sakemura, Y. Okuda, N. Negishi, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Nanba, K. Tanioka, N. Egami, A. Kobayashi, and N. Koshida
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Journal Title
J. Vac. Sci. Technol. B
Volume: 28
Issue: 2
Pages: C2D11-C2D14
DOI
Related Report
Peer Reviewed
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[Journal Article] 2/3-inch ultra-high-sensitivity image sensor with active-matrix high-efficiency electron emission device.2010
Author(s)
T.Nakada, T.Sato, Y.Matsuba, K.Sakemura Y.Okuda, N.Negishi, A.Watanabe T.Yoshikawa K.Ogasawara, M.Nanba, K.Tanioka, N.Egami, A.Kobayashi, N.Koshida
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Related Report
Peer Reviewed
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[Journal Article] Enhanced output current density of an active-matrix high-efficiency electron emission device(HEED) array with 13. 75μm pixels2009
Author(s)
T. Nakada, T. Sato, Y. Matsuba, R. Tanaka, K. Sakemura, N. Negishi, Y. Okuda, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Nanba, K. Tanioka, N. Egami, and N. Koshida
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Journal Title
J. Vac. Sci. Technol. B
Volume: 27
Issue: 2
Pages: 735-739
DOI
Related Report
Peer Reviewed
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[Journal Article] Enhanced output current density of an active-matrix high-efficiency electron emission device(HEED)array with 13.75μm pixels.2009
Author(s)
T.Nakada, T.Sato, Y.Matsuba, R.Tanaka, K.Sakemura, N.Negishi, Y.Okuda, A.Watanabe, T.Yoshikawa, K.Ogasawara, M.Nanba, K.Tanioka, N.Egami, N.Koshida
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Journal Title
J.Vac.Sci.Technol.B 27
Pages: 735-739
Related Report
Peer Reviewed
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[Presentation] 2/3-inch ultra-high sensitivity image sensor with active-matrix high-efficiency electron emitter array2009
Author(s)
T. Nakada T. Sato, Y. Matsuba, K. Sakemura, Y. Okuda, N. Negishi, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Nanba, K. Tanioka, N. Egami, A. Kobayashi, and N. Koshida
Organizer
Int. Vac. Nanoelectronics Conf.
Place of Presentation
Hamamatsu, Japan
Year and Date
2009-07-24
Related Report
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