Graphene atomic film transistor with gate-tunable band-gap

• Project/Area Number: 21241038
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Microdevices/Nanodevices
• Research Institution: National Institute for Materials Science
• Principal Investigator: TSUKAGOSHI Kazuhito 独立行政法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, 主任研究者 (50322665)
• Project Period (FY): 2009 – 2011
• Project Status: Completed (Fiscal Year 2011)
• Budget Amount: ¥47,060,000 (Direct Cost: ¥36,200,000、Indirect Cost: ¥10,860,000); Fiscal Year 2011: ¥14,430,000 (Direct Cost: ¥11,100,000、Indirect Cost: ¥3,330,000); Fiscal Year 2010: ¥14,430,000 (Direct Cost: ¥11,100,000、Indirect Cost: ¥3,330,000); Fiscal Year 2009: ¥18,200,000 (Direct Cost: ¥14,000,000、Indirect Cost: ¥4,200,000)
• Keywords: グラフェン / 電気伝導 / 電界効果 / 基礎物性 / 自己形成

Research Abstract

We have realized a practical wide band gap in bilayer graphene. The gap was induced by an electric field applied by dual-gate sandwiching the bilayer graphene. A self-assembled gate insulator enabled us to apply a large electric field which enhanced the band gap. The wide band gap allowed for operation of a logic gate composed of bilayer graphene transistors. These results predict that graphene electronics will possibly be realized as emerging transistors with an atomically thin semiconductor.

Research Products

• [Journal Article] Unipolar transport in bilayer graphene controlled by multiple p-n interfaces (2012)
  • Author(s): H. Miyazaki, S.-L. Li, S. Nakaharai, K. Tsukagoshi
  • Journal Title: Applied Physics Letters Volume: 100(in press)
  • Peer Reviewed
• [Journal Article] Origin of the relatively low transport mobility of graphene grown through chemical vapor deposition (2012)
  • Author(s): H. S. Song, S.-L. Li, H. Miyazaki, S. Sato, K. Hayashi, A. Yamada, N. Yokoyama, K. Tsukagoshi
  • Journal Title: Scientific Reports Volume: 2(337) Pages: 1-6
  • Peer Reviewed
• [Journal Article] Role for Atomic Terraces and Steps of Epitaxial Graphene in Electron Transport Properties (2012)
  • Author(s): H. Kuramochi, S. Odaka, K. Morita, S. Tanaka, H. Miyazaki, M. V. Lee, H. Hiura, K. Tsukagoshi
  • Journal Title: AIP advances Volume: 2(1) Pages: 1-10
  • Peer Reviewed
• [Journal Article] Observation of tunneling current in semiconducting graphene p-n junctions (2012)
  • Author(s): H. Miyazaki, S.-L. Li, H. Hiura, K. Tsukagoshi, A. Kanda
  • Journal Title: Journal of Physical Society of Japan Volume: 81(1)
  • Peer Reviewed
• [Journal Article] Controllable Gallium Melt-Assisted Interfacial Graphene Growth on SiC (2012)
  • Author(s): M. V. Lee, H. Hiura, A. Tyurnina, K. Tsukagoshi
  • Journal Title: Diamond and Related Materials Volume: 24 Pages: 34-38
  • Peer Reviewed
• [Journal Article] Observation of tunneling current in semiconducting graphene p-n junctions (2012)
  • Author(s): H.Miyazaki, S.-L.Li, H.Hiura, K.Tsukagoshi, A.Kanda
  • Journal Title: Journal of Physical Society of Japan Volume: 81 Issue: 1 Pages: 14708-14708
  • DOI: 10.1143/jpsj.81.014708
  • Peer Reviewed
• [Journal Article] Origin of the relatively low transport mobility of graphene grown through chemical vapor deposition (2012)
  • Author(s): H.S.Song, S.L.Li, H.Miyazaki, S.Sato, K.Hayashi, A.Yamada, N.Yokoyama, K.Tsukagoshi
  • Journal Title: Scientific Reports Volume: 2 Issue: 1
  • DOI: 10.1038/srep00337
  • Peer Reviewed
• [Journal Article] Unipolar transport in bilayer graphene controlled by multiple p-n interfaces (2012)
  • Author(s): H.Miyazaki, S.-L.Li, S.Nakaharai, K.Tsukagoshi
  • Journal Title: Applied Physics Letters Volume: 100(印刷中)(未定)
  • Peer Reviewed
• [Journal Article] Introducing Non-Uniform Strain to Graphene Using Dielectric Nanopillars (2011)
  • Author(s): H. Tomori, A. Kanda, H. Goto, Y. Ootuka, K. Tsukagoshi, S. Moriyama, E. Watanabe, D. Tsuya
  • Journal Title: Applied Physics Express Volume: 4(7)
  • NAID: 10029239649
  • Peer Reviewed
• [Journal Article] Complementary-like Semiconducting Graphene Logic Gates Controlled by Electrostatic Doping (2011)
  • Author(s): S.-L. Li, H. Miyazaki, M. V. Lee, C. Liu, A. Kanda, K. Tsukagoshi
  • Journal Title: Small Volume: 7(11) Pages: 1552-1556
  • Peer Reviewed
• [Journal Article] Enhanced Logic Performance with Semiconducting Bilayer Graphene Channels (2011)
  • Author(s): S.-L. Li, H. Miyazaki, H. Hiura, C. Liu, K. Tsukagoshi
  • Journal Title: ACS nano Volume: 5(1) Pages: 500-506
  • Peer Reviewed
• [Journal Article] Enhanced Logic Performance with Semiconducting Bilayer Graphene Channels (2011)
  • Author(s): S.-L.Li, H.Miyazaki, H.Hiura, C.Liu, K.Tsukagoshi
  • Journal Title: ACS nano Volume: 5 Issue: 1 Pages: 500-506
  • DOI: 10.1021/nn102346b
  • Peer Reviewed
• [Journal Article] Complementary-like Semiconducting Graphene Logic Gates Controlled by Electrostatic Doping (2011)
  • Author(s): S.-L.Li, H.Miyazaki, M.V.Lee, C.Liu, A.Kanda, K.Tsukagoshi
  • Journal Title: Small Volume: 7 Issue: 11 Pages: 1552-1556
  • DOI: 10.1002/smll.201100318
  • Peer Reviewed
• [Journal Article] Introducing Non-Uniform Strain to Graphene Using Dielectric Nanopillars (2011)
  • Author(s): H.Tomori, A.Kanda, H.Goto, Y.Ootuka, K.Tsukagoshi, S.Moriyama, E.Watanabe, D.Tsuya
  • Journal Title: Applied Physics Express Volume: 4 Issue: 7 Pages: 75102-75102
  • DOI: 10.1143/apex.4.075102
  • NAID: 10029239649
  • Peer Reviewed
• [Journal Article] 新たな世界を作り出した物質"グラフェン"-流れを引き寄せた洞察力- (2011)
  • Author(s): 塚越一仁, 若林克法
  • Journal Title: 岩波「科学」 Volume: 81 Pages: 23-26
• [Journal Article] 2層グラフェン電気伝導の強電界効果 (2010)
  • Author(s): 塚越一仁,宮崎久生,神田晶申
  • Journal Title: 固体物理 Volume: 45(11) Pages: 93-102
  • Peer Reviewed
• [Journal Article] グラフェン素子の作り方とゲート電界による伝導変調(小特集「グラフェンの視点から見た炭素材料」) (2010)
  • Author(s): 塚越一仁,宮崎久生
  • Journal Title: 炭素 Volume: 243号(6) Pages: 110-115
  • Peer Reviewed
• [Journal Article] Influence of disorder on conductance in bilayer graphene under perpendicular electric field (2010)
  • Author(s): H. Miyazaki, K. Tsukagoshi, A. Kanda, M. Otani, S. Okada
  • Journal Title: Nano Letters Volume: 10(10) Pages: 3888-3892
  • Peer Reviewed
• [Journal Article] Low operating bias and matched input-output characteristics in graphene inverters (2010)
  • Author(s): S.-L. Li, H. Miyazaki, A. Kumatani, A. Kanda, K. Tsukagoshi
  • Journal Title: Nano Letters Volume: 10(7) Pages: 2357-2362
  • Peer Reviewed
• [Journal Article] Anisotropic transport in epitaxial graphene on SiC substrate with periodic nanofacets (2010)
  • Author(s): S. Odaka, H. Miyazaki, S.-L. Li, A. Kanda, K. Morita, S. Tanaka, Y. Miyata, H. Kataura, K. Tsukagoshi, Y. Aoyagi
  • Journal Title: Applied Physics Letters Volume: 96(6)
  • Peer Reviewed
• [Journal Article] Resistance modulation of graphite/graphene film controlled by gate electric field (2010)
  • Author(s): H. Miyazaki, S.-Li, A. Kanda, K. Tsukagoshi
  • Journal Title: Semiconductor Science and Technology Volume: 25(3)
  • Peer Reviewed
• [Journal Article] グラフェン素子の作り方とゲート電界による伝導変調(小特集「グラフェンの視点から見た炭素材料」) (2010)
  • Author(s): 塚越一仁, 宮崎久生
  • Journal Title: 炭素 Volume: 243 Pages: 110-115
  • Peer Reviewed
• [Journal Article] 2層グラフェン電気伝導の強電界効果 (2010)
  • Author(s): 塚越一仁, 宮崎久生, 神田晶申
  • Journal Title: 固体物理 Volume: 45 Pages: 93-102
  • Peer Reviewed
• [Journal Article] Resistance modulation of graphite/graphene film contrlled by gate electric field (2010)
  • Author(s): H.Miyazaki, S.Li, A.Kanda, K.Tsukagoshi
  • Journal Title: Semiconductor Science and Technology 25
  • Peer Reviewed
• [Journal Article] Anisotropic transport in epitaxial graphene on SiC substrate with periodic nanofacets (2010)
  • Author(s): S.Odaka, H.Miyazaki, S, -L Li, A.Kanda, K.Morita, S.Tanaka, Y.Miyata, H.Kataura, K.Tsukagoshi, Y.Aoyagi
  • Journal Title: Applied Physics Letters 96
  • Peer Reviewed
• [Journal Article] Gate-voltage modulation of conductance in bilayer graphene (2010)
  • Author(s): H.Miyazaki, A.Kanda, K.Tsukagoshi
  • Journal Title: Proceedings of Atomic Level Characterization
• [Journal Article] 簡単な?グラフェンの作り方 (2009)
  • Author(s): 日浦英文, 宮崎久生, 神田晶申, 塚越一仁
  • Journal Title: 応用物理学会 薄膜・表面物理分科会News Letter 136 Pages: 19-24
• [Journal Article] (2009)
  • Author(s): 宮崎久生, 日浦英文, 塚越一仁
  • Journal Title: グラフェンの物性,評価,第5章「グラフェンの作製、膜厚の評価、観察」(シーエムシー出版) Pages: 79-89
• [Journal Article] Complementary-like Semiconducting Graphene Logic Gates Controlled by Electrostatic Doping
  • Author(s): S.-L.Li, H.Miyazaki, M.V.Lee, C.Liu, A.Kanda, K.Tsukagoshi
  • Journal Title: SMALL Volume: (印刷中)
  • Peer Reviewed
• [Presentation] Investigation to low transport mobility of graphene grown through chemical vapor deposition (2012)
  • Author(s): H. S. Song, S. L. Li, H. Miyazaki, S. Sato, K. Hayashi, A. Yamada, N. Yokoyama, K. Tsukagoshi
  • Organizer: International Symposium on "Development of Core Technologies for Green Nanoelectronics"
  • Place of Presentation: Tokoyo, Japan
• [Presentation] Investigation to low transport mobility of graphene grown through chemical vapor deposition (2012)
  • Author(s): H.S.Song, S.L.Li, H.Miyazaki, S.Sato, K.Hayashi, A.Yamada, N.Yokoyama, K.Tsukagoshi
  • Organizer: International Symposium on "Development of Core Technologies for Green Nanoelectronics"
  • Place of Presentation: National Museum of Emerging Science and Innovation (Miraikan), Tokoyo
• [Presentation] Gate-tunable transport in graphene (2011)
  • Author(s): K. Tsukagoshi
  • Organizer: SSDM2011 Short Course "Fundamental and applications of carbon nanotube and graphene"
  • Place of Presentation: Nagoya
  • Year and Date: 2011-09-27
• [Presentation] Gate-tunable transport in graphene (2011)
  • Author(s): Kazuhito Tsukagoshi
  • Organizer: 2011 International Conference on Solid state Devices and Materia
  • Place of Presentation: Aichi Industry & Labor Center, Nagoya(招待講演)
  • Year and Date: 2011-09-27
• [Presentation] Gate-modulation of electric conduction for graphene device (2011)
  • Author(s): K. Tsukagoshi
  • Organizer: Carbon-Based Nano-Materials and Devices
  • Place of Presentation: Suzhou, China
• [Presentation] Complementary-like Graphene Logic Gates (2011)
  • Author(s): S.-L. Li, H. Miyazaki, K. Tsukagoshi
  • Organizer: 2011 A3 Symposium of Emerging Materials
  • Place of Presentation: Urumqi, XinJiang, China
• [Presentation] Electron tunneling in bilayer graphene p-n junction controlled by gate electric field (2011)
  • Author(s): H. Miyazaki, M. V. Lee, S.-L. Li, A. Kanda, K. Tsukagoshi
  • Organizer: 2011 International Conference on Solid State Devices and Material(SSDM2011)
  • Place of Presentation: Nagoya
• [Presentation] Electric field induced p-n tunnel junction in bilayer graphene (2011)
  • Author(s): H. Miyazaki, M. Lee, S.-L. Li, A. Kanda, K. Tsukagoshi
  • Organizer: The 37th leading conference in Europe for Micro-and Nano Engineering(MNE2011)
  • Place of Presentation: Berlin, Germany
• [Presentation] Band-gap engineering by electric field in bilayer graphene (2011)
  • Author(s): K. Tsukagoshi
  • Organizer: 22nd European conference on Diamond, Garmish-Parternkirchen
  • Place of Presentation: Germany
• [Presentation] Geometric effect for electron transport in epitaxial graphene on 4H-SiC(0001) (2011)
  • Author(s): H. Kuramochi, S. Odaka, K. Morita, S. Tanaka, H. Miyazaki, H. Hiura, K. Tsukagoshi
  • Organizer: International confetence on new diamond and nano carbons 2011(NDNC2011)
  • Place of Presentation: Shimane, Japan
• [Presentation] Characterization of Graphene Formed on SiC by Liquid Phase Epitaxy (2011)
  • Author(s): M. V. Lee, H. Hiura, A. Tyurnina, K. Tsukagoshi
  • Organizer: International confetence on new diamond and nano carbons 2011(NDNC2011)
  • Place of Presentation: Shimane, Japan
• [Presentation] Complementary-like semiconducting graphene logic inverters (2011)
  • Author(s): S.-L. Li, H. Miyazaki, K. Tsukagoshi
  • Organizer: American Physical Society March meeting 2011
  • Place of Presentation: Dallas, Texas, USA
• [Presentation] Bilayer graphene p-i-n tunnel junction controlled by modulated top gate (2011)
  • Author(s): H. Miyazaki, S.-L. Li, K. Tsukagoshi
  • Organizer: American Physical Society March meeting 2011
  • Place of Presentation: Dallas, Texas, USA
• [Presentation] Characterization of Graphene Formed on SiC by Liquid Phase Epitaxy (2011)
  • Author(s): M.V.Lee, H.Hiura, A.Tyurnina, K.Tsukagoshi
  • Organizer: International confetence on new diamond and nano carbons 2011
  • Place of Presentation: Kunibiki Messe, Shimane
• [Presentation] Geometric effect for electron transport in epitaxial graphene on 4H-SiC(0001) (2011)
  • Author(s): H.Kuramochi, S.Odaka, K.Morita, S.Tanaka, H.Miyazaki, H.Hiura, K.Tsukagoshi
  • Organizer: International confetence on new diamond and nano carbons 2011
  • Place of Presentation: Kunibiki Messe, Shimane
• [Presentation] Band-gap engineering by electric field in bilayer graphene (2011)
  • Author(s): Kazuhito Tsukagoshi
  • Organizer: 22nd European conference on Diamond
  • Place of Presentation: Garmish-Parternkirchen, Germany(招待講演)
• [Presentation] Electric field induced p-n tunnel junction in bilayer graphene (2011)
  • Author(s): H.Miyazaki, M.Lee, S.-L.Li, A.Kanda, K.Tsukagoshi
  • Organizer: The 37th leading conference in Europe for Micro- and Nano Engineering
  • Place of Presentation: Berlin, Germany
• [Presentation] Electron tunneling in bilayer graphene p-n junction controlled by gate electric field (2011)
  • Author(s): H.Miyazaki, M.V.Lee, S.-L.Li, A.Kanda, K.Tsukagoshi
  • Organizer: 2011 International Conference on Solid State Devices and Material
  • Place of Presentation: Aichi Industry & Labor Center, Nagoya
• [Presentation] Gate-modulation of electric conduction for graphene device (2011)
  • Author(s): Kazuhito Tsukagoshi
  • Organizer: Carbon-Based Nano-Materials and Devices
  • Place of Presentation: Suzhou, China(招待講演)
• [Presentation] Complementary-like Graphene Logic Gates (2011)
  • Author(s): S.-L.Li, H.Miyazaki, K.Tsukagoshi
  • Organizer: 2011 A3 Symposium of Emerging Materials
  • Place of Presentation: Urumqi, Xinjiang, China
• [Presentation] Band gap tuning in graphene device (2010)
  • Author(s): K. Tsukagoshi
  • Organizer: 日中学術セミナー
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-06-27
• [Presentation] Band-gap tunable operation of bilayer graphene device (2010)
  • Author(s): K. Tsukagoshi
  • Organizer: The 2010 International Chemical Congress of Pacific Basin Societies(Pacifichem 2010)
  • Place of Presentation: Honolulu, Hawaii, USA
• [Presentation] Band-gap tunable operation of bilayer graphene device (2010)
  • Author(s): K. Taukagoshi
  • Organizer: The 1st China, Japan and Korea Joint Symposium
  • Place of Presentation: Core-Riviera Hotel, Chonju, South Korea
• [Presentation] Thin film transistor from CVD graphene, A. V. Tyurnina (2010)
  • Author(s): A. N. Obraztsov, H. Hiura, K. Tsukagoshi
  • Organizer: 2nd Russian-Japanese Young Scientists Conference on Nanomaterials and Nanotechnology
  • Place of Presentation: Tokyo, Japan
• [Presentation] Gate-induced band gap for graphene device (2010)
  • Author(s): K. Taukagoshi
  • Organizer: 40th European Solid-State Device Research Conference(ESSDERC 2010)
  • Place of Presentation: Sevilla, Spain
• [Presentation] Anisotropic transport in graphene grown on vicinal SiC substrate (2010)
  • Author(s): H. Miyazaki, S. Odaka, S.-L. Li, A. Kanda, K. Tsukagoshi, K. Morita, S. Tanaka
  • Organizer: Engineering Conferences International : Recent Advances in Graphene and Related Materials
  • Place of Presentation: Singapore
• [Presentation] Complementary-like graphene logic inverters (2010)
  • Author(s): Song-Lin Li, H. Miyazaki, K. Tsukagoshi
  • Organizer: Engineering Conferences International : Recent Advances in Graphene and Related Materials
  • Place of Presentation: Singapore
• [Presentation] Band gap tuning for graphene transistor (2010)
  • Author(s): K. Tsukagoshi
  • Organizer: Engineering Conferences International : Recent Advances in Graphene and Related Materials
  • Place of Presentation: Singapore
• [Presentation] Anisotropic transport in graphene grown on SiC (2010)
  • Author(s): H. Miyazaki, S. Odaka, M.-D. Yi, S.-L. Li, A. Kanda, K. Tsukagoshi, K. Morita, S. Tanaka
  • Organizer: International Conference on Science and Technology of Synthetic Metals 2010(ICSM2010)
  • Place of Presentation: Kyoto, Japan
• [Presentation] Bilayer graphene (2010)
  • Author(s): K. Tsukagoshi
  • Organizer: The 6th International Nanotechnology Conference on Communications and Cooperation(INC6)
  • Place of Presentation: Minatec, Grenoble, France
• [Presentation] Low operating bias and enhanced voltage gain in graphene inverters with high capacitive-efficiency top gate (2010)
  • Author(s): S.-L. Li, H. Miyazaki, H. Hiura, A. Kanda, K. Tsukagoshi
  • Organizer: Graphene Week 2010
  • Place of Presentation: Maryland University, Maryland, USA
• [Presentation] Band gap tuning in graphene device (2010)
  • Author(s): K. Tsukagoshi
  • Organizer: NIMS-NUS/IMRE joint workshop, National University of Singapore
  • Place of Presentation: Singapore
• [Presentation] Temperature dependence of conductance in bilayer graphene with electric-field-induced band gap (2010)
  • Author(s): H. Miyazaki, S. Li, A. Kanda, K. Tsukagoshi
  • Organizer: American Physical Society March meeting 2010
  • Place of Presentation: Portland, OR, USA
• [Presentation] Gate-tunable band gap in bilayer graphene (2010)
  • Author(s): K. Tsukagoshi, H. Miyazaki, S. Li, A. Kanda
  • Organizer: 2010 International Winterschool on Electronic Properties of Novel Materials(IWEPNM 2010)
  • Place of Presentation: Kirchberg, Austria
• [Presentation] Graphene p-n junction controlled by dielectric gate coupling (2010)
  • Author(s): H. Miyazaki, Songlin Li, H. Hiura, A. Kanda, K. Tsukagoshi
  • Organizer: The materials Nanoarchitectonics(MANA) international symposium 2010
  • Place of Presentation: Tsukuba, Japan
• [Presentation] Low operating bias and enhanced voltage gain in graphene inverters with high capacitive-efficiency top gate (2010)
  • Author(s): S. Li, H. Miyazaki, K. Tsukagoshi
  • Organizer: The materials Nanoarchitectonics(MANA) international symposium 2010
  • Place of Presentation: Tsukuba, Japan
• [Presentation] Tunable band gap in Graphene (2010)
  • Author(s): K. Tsukagoshi, H. Miyazaki, Songlin Li
  • Organizer: The materials Nanoarchitectonics(MANA) international symposium 2010
  • Place of Presentation: Tsukuba, Japan
• [Presentation] Gate-induced band gap for graphene device (2010)
  • Author(s): K.Tsukagoshi
  • Organizer: 40th European Solid-State Device Research Conference (ESSDERC 2010)
  • Place of Presentation: Barcelo Convention Center(スペイン)
• [Presentation] Band-gap tunable operation of bilayer graphene device (2010)
  • Author(s): K.Taukagoshi
  • Organizer: The 1st China, Japan and Korea joint Symposium(日中韓シンポジウム)
  • Place of Presentation: Core-Riviera Hotel, Chonju(韓国)
• [Presentation] Band-gap tunable operation of bilayer graphene device (2010)
  • Author(s): K.Taukagoshi
  • Organizer: The 2010 International Chemical Congress of Pacific Basin Societies (Pacifichem 2010)
  • Place of Presentation: Hawaii Convention Center Hawaii,(米国)
• [Presentation] Bilayer graphene p-i-n tunnel junction controlled by modulated top gate (2010)
  • Author(s): H.Miyazaki, Songlin Li, K.Tsukagoshi
  • Organizer: American Physical Society March meeting 2011
  • Place of Presentation: Dallas Convention Center(米国)
• [Presentation] Gate-tunable band gap in bilayer graphene (2010)
  • Author(s): K.Tsukagoshi, H.Miyazaki, S.Li, A.Kanda
  • Organizer: 2010 International Winterschool on Electronic Properties of Novel Materials (IWEPNM 2010)
  • Place of Presentation: Hotel Sonnalp, Kirchberg, Austria
• [Presentation] Temperature dependence of conductance in bilayer graphene with electric-field-induced band gap (2010)
  • Author(s): H.Miyazaki, S.Li, A.Kanda, K.Tsukagoshi
  • Organizer: American Physical Society March meeting 2010
  • Place of Presentation: Oregon Convention Center, Portland, OR, USA
• [Presentation] Gate-voltage modulation of conductance in bilayer graphene (2009)
  • Author(s): H. Miyazaki, A. Kanda, K. Tsukagoshi
  • Organizer: Atomic Level Characterization(ALC' 09)
  • Place of Presentation: Maui, Hawaii, USA
• [Presentation] Electric transport in epitaxial graphene on vicinal SiC substrate with periodic atomic-scale facets (2009)
  • Author(s): S. Odaka, H. Miyazaki, A. Kanda, K. Morita, S. Tanaka, Y. Miyata, H. Kataura, K. Tsukagoshi, Y. Aoyagi
  • Organizer: Material Research Society(MRS) 2009 Fall Meeting
  • Place of Presentation: Boston, USA
• [Presentation] Electric field modulation of bilayer graphene channel (2009)
  • Author(s): H. Miyazaki, K. Tsukagoshi, A. Kanda
  • Organizer: The 4th international symposium on atomic technologies(ISAT-4)
  • Place of Presentation: Kobe, Japan
• [Presentation] Graphene conduction controlled by gate-voltage (2009)
  • Author(s): K. Tsukagoshi
  • Organizer: DST-JSPS Workshop "Indo-Japan workshop on graphene"
  • Place of Presentation: Bangarol, India
• [Presentation] Gate voltage induced band gap in bilayer graphene (2009)
  • Author(s): K. Tsukagoshi, H. Miyazaki, A. Kanda
  • Organizer: The 6^<th> Korea-Japan sympojium on carbon nanotube
  • Place of Presentation: Ginowan, Okinawa, Japan
• [Presentation] Anisotropic transport in epitaxial graphene transistor on vicinal SiC substrate (2009)
  • Author(s): S. Odaka, H. Miyazaki, A. Kanda, K. Morita, S. Tanaka, Y. Miyata, H. Kataura, K. Tsukagoshi, Y. Aoyagi
  • Organizer: 2009 International Conference on Solid State Devices and Materials(SSDM 2009)
  • Place of Presentation: Sendai, Japan
• [Presentation] Band-gap moduration in gated bilayer graphene (2009)
  • Author(s): K. Tsukagoshi, H. Miyazaki, A. Kanda
  • Organizer: Trends In Nanotechnology 2009(TNT2009)
  • Place of Presentation: Barcelona, Spain
• [Presentation] Band gap moduration in bilayer graphene (2009)
  • Author(s): K. Tsukagoshi, H. Miyazaki, A. Kanda
  • Organizer: The physics and new phenomena of pai-electronic interfaces(界面パイ電子系における新現象と物理)
  • Place of Presentation: Kashiwa, University of Tokyo
• [Presentation] Effect of current annealing on electronic properties of multilayer graphene (2009)
  • Author(s): S. Tanaka, H. Goto, H. Tomori, Y. Ootuka, K. Tsukagoshi, A. Kanda
  • Organizer: Graphene Tokyo 2009
  • Place of Presentation: Tokyo
• [Presentation] Proximity-induced supercurrent in single-layer graphene (2009)
  • Author(s): H. Goto, H. Tomori, S. Tanaka, Y. Ootuka, K. Tsukagoshi, A. Kanda
  • Organizer: Graphene Tokyo 2009
  • Place of Presentation: Tokyo
• [Presentation] Electric field moduration of bilayer graphene (2009)
  • Author(s): K. Tsukagoshi, H. Miyazaki, A. Kanda
  • Organizer: Graphene Tokyo 2009
  • Place of Presentation: Tokyo
• [Presentation] Tunable semiconducting state in bilayer graphene (2009)
  • Author(s): H. Miyazaki, K. Tsukagoshi, A. Kanda
  • Organizer: The 18th International Conference on Electronic Properties of Two-Dimensional Systems(EP2DS-18)
  • Place of Presentation: Kobe, Japan
• [Presentation] Gate induced band gap for graphene device (2009)
  • Author(s): K. Tsukagoshi, H. Miyazaki, A. Kanda
  • Organizer: 9^<th> Biennial Workshop in Russia, Fullerenes and Atomic Clusters(IWFAC2009)
  • Place of Presentation: St Petersburg, Russia
• [Presentation] Electric field modulation of graphene channel (2009)
  • Author(s): H. Miyazaki, K. Tsukagoshi, A. Kanda
  • Organizer: International conference on materials for advanced technologies(ICMAT2009)
  • Place of Presentation: Singapole, Singapole
• [Presentation] Electric field modulation of graphene channel (2009)
  • Author(s): H.Miyazaki, K.Tsukagoshi, A.Kanda
  • Organizer: International conference on materials for advanced technologies (ICMAT2009)
  • Place of Presentation: Suntec Singapore International Convention & Exhibition Centre, Singapole
• [Presentation] Gate induced band gap for graphene device (2009)
  • Author(s): K.Tsukagoshi, H.Miyazaki, A.Kanda
  • Organizer: 9th Biennial Workshop in Russia, Fullerenes and Atomic Clusters (IWFAC2009)
  • Place of Presentation: Ioffe Physico-Technical Institute of the Russian Academy of Sciences, St Petersburg, Russia
• [Presentation] Tunable semiconducting state in bilayer graphene (2009)
  • Author(s): H.Miyazaki, K.Tsukagoshi, A.Kanda
  • Organizer: The 18th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-18)
  • Place of Presentation: Kobe International Conference Center, Kobe, Japan
• [Presentation] Electric field moduration of bilayer graphene (2009)
  • Author(s): K.Tsukagoshi, H.Miyazaki, A.Kanda
  • Organizer: Graphene Tokyo 2009
  • Place of Presentation: University of Tokyo, Tokyo, Japan
• [Presentation] Band-gap moduration in gated bilayer graphene (2009)
  • Author(s): K.Tsukagoshi, H.Miyazaki, A.Kanda
  • Organizer: Trends In Nanotechnology 2009 (TNT2009)
  • Place of Presentation: Auditorio de la ONCE, Barcelona, Spain
• [Presentation] Anisotropic transport in epitaxial graphene transistor on vicinal SiC substrate (2009)
  • Author(s): S.Odaka, H.Miyazaki, A.Kanda, K.Morita, S.Tanaka, Y.Miyata, H.Kataura, K.Tsukagoshi, Y.Aoyagi
  • Organizer: 2009 International Conference on Solid State Devices and Materials (SSDM 2009)
  • Place of Presentation: Sendai Kokusai Hotel, Sendai, Japan
• [Presentation] Graphene conduction controlled by gate-voltage (2009)
  • Author(s): K.Tsukagosh
  • Organizer: Indo-Japan workshop on graphene(日印セミナー)
  • Place of Presentation: Conference Hall, JNCASR, Bangarol, India
• [Presentation] Electric transport in epitaxial graphene on vicinal SiC substrate with periodic atomic-scale facets (2009)
  • Author(s): S.Odaka, H.Miyazaki, A.Kanda, K.Morita, S.Tanaka, Y.Miyata, H.Kataura, K.Tsukagoshi, Y.Aoyagi
  • Organizer: Material Research Society (MRS) 2009 Fall Meeting
  • Place of Presentation: Hynes Convention Center, Boston, USA
• [Presentation] Gate-voltage modulation of conductance in bilayer graphene (2009)
  • Author(s): H.Miyazaki, A.Kanda, K.Tsukagoshi
  • Organizer: Atomic Level Characterization (ASC'09)
  • Place of Presentation: Westin Maui Resort & Spa, Maui, Hawaii
• [Book] 磁気特性 (2011)
  • Author(s): 神田晶申、塚越一仁
  • Publisher: 化学同人
• [Book] 剥離グラフェンの作り方と判定方法 (2011)
  • Author(s): 塚越一仁,宮崎久生,日浦英文,黎松林
  • Publisher: コロナ社
• [Book] SiC上グラフェンでの電界効果素子の試作と評価 (2011)
  • Author(s): 塚越一仁,宮崎久生,小高隼介
  • Publisher: シーエムシー出版
• [Book] Gate-Voltage Modulation in Graphene (2011)
  • Author(s): K. Tsukagoshi, H. Miyazaki, S.-L. Li, A. Kumatani, H. Hiura, A. Kanda
  • Publisher: World Scientific Publishing Company
• [Book] カーボンナノチューブ・グラフェンハンドブック (2011)
  • Author(s): 塚越一仁, 宮崎久生, 日浦英文, 黎松林
  • Publisher: コロナ社
• [Book] Graphene and its Fascinating Attributes (2011)
  • Author(s): K.Tsukagoshi, H.Miyazaki, S.-L.Li, A.Kumatani, H.Hiura, A.Kanda
  • Publisher: World Scientific Publishing
• [Book] ナノカーボンの応用と実用化-フラーレン、ナノチューブ、グラフェンを中心に- (2011)
  • Author(s): 塚越一仁, 宮崎久生, 小高隼介
  • Publisher: コロナ社
• [Book] 炭素学 (2011)
  • Author(s): 神田晶申、塚越一仁
  • Publisher: 化学同人
• [Remarks]
  • URL: http://www.nims.go.jp/pi-ele_g/
• [Remarks]
  • URL: http://www.nims.go.jp/pi-ele_g/
• [Remarks]
  • URL: http://www.nims.go.jp/pi-ele_g/
• [Patent(Industrial Property Rights)] 2次元薄膜原子構造の層数決定方法および2次元薄膜原子構造の層数決定装置 (2010)
  • Inventor(s): 塚越一仁,宮崎久生,日浦英文
  • Industrial Property Rights Holder: 物質・材料研究機構
  • Industrial Property Number: 2010-145314
  • Filing Date: 2010-06-25