Graphene atomic film transistor with gate-tunable band-gap
| Project/Area Number |
21241038
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Microdevices/Nanodevices
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
TSUKAGOSHI Kazuhito 独立行政法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, 主任研究者 (50322665)
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| Project Period (FY) |
2009 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥47,060,000 (Direct Cost: ¥36,200,000、Indirect Cost: ¥10,860,000)
Fiscal Year 2011: ¥14,430,000 (Direct Cost: ¥11,100,000、Indirect Cost: ¥3,330,000)
Fiscal Year 2010: ¥14,430,000 (Direct Cost: ¥11,100,000、Indirect Cost: ¥3,330,000)
Fiscal Year 2009: ¥18,200,000 (Direct Cost: ¥14,000,000、Indirect Cost: ¥4,200,000)
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| Keywords | グラフェン / 電気伝導 / 電界効果 / 基礎物性 / 自己形成 |
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| Research Abstract |
We have realized a practical wide band gap in bilayer graphene. The gap was induced by an electric field applied by dual-gate sandwiching the bilayer graphene. A self-assembled gate insulator enabled us to apply a large electric field which enhanced the band gap. The wide band gap allowed for operation of a logic gate composed of bilayer graphene transistors. These results predict that graphene electronics will possibly be realized as emerging transistors with an atomically thin semiconductor.
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Report
(4 results)
Research Products
(107 results)
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[Journal Article] Anisotropic transport in epitaxial graphene on SiC substrate with periodic nanofacets2010
Author(s)
S.Odaka, H.Miyazaki, S, -L Li, A.Kanda, K.Morita, S.Tanaka, Y.Miyata, H.Kataura, K.Tsukagoshi, Y.Aoyagi
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Journal Title
Applied Physics Letters 96
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Peer Reviewed
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[Journal Article]2009
Author(s)
宮崎久生, 日浦英文, 塚越一仁
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Journal Title
グラフェンの物性,評価,第5章「グラフェンの作製、膜厚の評価、観察」(シーエムシー出版)
Pages: 79-89
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[Presentation] Bilayer graphene2010
Author(s)
K. Tsukagoshi
Organizer
The 6th International Nanotechnology Conference on Communications and Cooperation(INC6)
Place of Presentation
Minatec, Grenoble, France
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[Presentation] Gate induced band gap for graphene device2009
Author(s)
K.Tsukagoshi, H.Miyazaki, A.Kanda
Organizer
9th Biennial Workshop in Russia, Fullerenes and Atomic Clusters (IWFAC2009)
Place of Presentation
Ioffe Physico-Technical Institute of the Russian Academy of Sciences, St Petersburg, Russia
Related Report
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[Presentation] Anisotropic transport in epitaxial graphene transistor on vicinal SiC substrate2009
Author(s)
S.Odaka, H.Miyazaki, A.Kanda, K.Morita, S.Tanaka, Y.Miyata, H.Kataura, K.Tsukagoshi, Y.Aoyagi
Organizer
2009 International Conference on Solid State Devices and Materials (SSDM 2009)
Place of Presentation
Sendai Kokusai Hotel, Sendai, Japan
Related Report
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[Presentation] Electric transport in epitaxial graphene on vicinal SiC substrate with periodic atomic-scale facets2009
Author(s)
S.Odaka, H.Miyazaki, A.Kanda, K.Morita, S.Tanaka, Y.Miyata, H.Kataura, K.Tsukagoshi, Y.Aoyagi
Organizer
Material Research Society (MRS) 2009 Fall Meeting
Place of Presentation
Hynes Convention Center, Boston, USA
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