Excited states of surface electrons and dynamics of adsorbates

• Project/Area Number: 21244048
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Condensed matter physics I
• Research Institution: The University of Tokyo
• Principal Investigator: KOMORI Fumio 東京大学, 物性研究所, 教授 (60170388)
• Co-Investigator(Kenkyū-buntansha): NAKATSUJI Kan 東京大学, 物性研究所, 助教 (80311629) ; TANAKA Satoru 九州大学, 工学系研究科, 教授 (80281640)
• Co-Investigator(Renkei-kenkyūsha): WATANABE Shuntaro 東京大学, 物性研究所, 教授 (50143540) ; SHIN Shik 東京大学, 物性研究所, 教授 (00162785)
• Project Period (FY): 2009 – 2011
• Project Status: Completed (Fiscal Year 2011)
• Budget Amount: ¥48,750,000 (Direct Cost: ¥37,500,000、Indirect Cost: ¥11,250,000); Fiscal Year 2011: ¥6,890,000 (Direct Cost: ¥5,300,000、Indirect Cost: ¥1,590,000); Fiscal Year 2010: ¥10,270,000 (Direct Cost: ¥7,900,000、Indirect Cost: ¥2,370,000); Fiscal Year 2009: ¥31,590,000 (Direct Cost: ¥24,300,000、Indirect Cost: ¥7,290,000)
• Keywords: グラフェン / ゲルマニウム表面 / 電子状態 / 走査トンネル顕微鏡 / 光電子分光 / スピン分裂 / 電子励起

Research Abstract

We have studied dynamics of the atoms and electrons of low-dimensional systems localized at solid surface on the basis of the knowledge of their atomic and electronic structures. Uniaxial anisotropy is found in the distribution of electronic states and the relaxation of electron momentum for newly-fabricated surface systems with one-dimensional and nanometer-scale structures. Motion of atoms at surface is induced by electron energy injected to the surface electronic states through the energy transfer from kinetic energy of the electrons to surface vibration energy of the lattice systems.

Research Products

• [Journal Article] Uniaxial deformation of graphene Dirac cone on a vicinal SiC substrate (2012)
  • Author(s): K. Nakatsuji, T. Yoshimura, K. Morita, S. Tanaka and F. Komori
  • Journal Title: Phys. Rev Volume: 85 Pages: 1-6
• [Journal Article] Shape of metallic bandat single-domain Au-adsorbed Ge(001) surface studied by angle-resolved photoemission spectroscopy (2011)
  • Author(s): K. Nakatsuji, Y. Motomura, R. Niikura, and F. Komori
  • Journal Title: Phys. Rev Volume: 84 Pages: 1-4
• [Journal Article] Anisotropic splitting and spin polarization of metallic bands due topspin-orbit interaction at the Ge(111)(√<3>×√<3>) R30-Au surface (2011)
  • Author(s): K. Nakatsuji, R. Niikura, Y. Shibata, M. Yamada, T. Iimori, and F. Komori
  • Journal Title: Phys. Rev Volume: 84 Pages: 1-4
• [Journal Article] Nanostructures made by mixing Rh atoms on N-adsorbed Cu(001)surface (2011)
  • Author(s): Kan Nakatsuji, 他4名
  • Journal Title: Surface Science Volume: 605 Issue: 19-20 Pages: 1818-1825
  • DOI: 10.1016/j.susc.2011.06.016
  • Peer Reviewed
• [Journal Article] Anisotropic splitting and spin polarization of metallic bands due to spin-orbit interaction at the Ge(111)√3×√3)R30°-Au surface (2011)
  • Author(s): Kan Nakatsuji, 他5名
  • Journal Title: Phys.Rev.B Volume: 84 Issue: 3 Pages: 35436-35436
  • DOI: 10.1103/physrevb.84.035436
  • Peer Reviewed
• [Journal Article] Shape of metallic band at single-domain Au-adsorbed Ge(001) surface studied by angle-resolved photoemission spectroscopy (2011)
  • Author(s): Kan Nakatsuji, 他3名
  • Journal Title: Phys.Rev.B Volume: 84 Issue: 11 Pages: 115411-115411
  • DOI: 10.1103/physrevb.84.115411
  • Peer Reviewed
• [Journal Article] Topological transition in Bi_<1-x>Sb_x studied as a function of Sb doping (2011)
  • Author(s): Fumitaka Nakamura, 他14名
  • Journal Title: Phys.Rev.B Volume: 84 Issue: 23
  • DOI: 10.1103/physrevb.84.235308
  • Peer Reviewed
• [Journal Article] Local atomic and electronic structure of Au-adsorbed Ge(001) Surface-scanning tunneling microscopy and X-ray photoemission spectroscopy (2011)
  • Author(s): Ryota Niikura
  • Journal Title: Phys.Rev.B Volume: 83
  • Peer Reviewed
• [Journal Article] Shape, width, and replicas of bands of single-layer graphene grown on Si-terminated vicinal SiC(0001) (2010)
  • Author(s): K. Nakatsuji, Y. Shibata, R. Niikura, F. Komori K. Morita and S. Tanaka
  • Journal Title: Phys. Rev Volume: 82 Pages: 1-5
• [Journal Article] Direct mapping of the spin-filtered surface bands of a three-dimensional quantum spin Hall insulator (2010)
  • Author(s): A. Nishide, A. A. Taskin, Y. Takeichi, T. Okuda, A. Kakizaki, T. Hirahara, K. Nakatsuji, F. Komori, Y. Ando, and I. Matsuda
  • Journal Title: Phys. Rev Volume: 81 Pages: 1-4
• [Journal Article] Shape, width, and replicas of bands of single-layer graphene grown on Si-terminated vicinal SiC(0001) (2010)
  • Author(s): Kan Nakatsuji
  • Journal Title: Phys.Rev.B Volume: 82
  • Peer Reviewed
• [Journal Article] LEED analysis of graphite films on vicinal 6H-SiC(0001) surface (2010)
  • Author(s): K.Hayashi
  • Journal Title: J.Novel Carbon Resource Sci. Volume: 2 Pages: 17-20
  • Peer Reviewed
• [Journal Article] Anisotropic layer-by-layer growth of graphene on vicinal SiC(0001) surfaces. (2010)
  • Author(s): Satoru Tanaka
  • Journal Title: Phys.Rev.B 81
  • NAID: 120005227433
  • Peer Reviewed
• [Journal Article] Local vibrational excitation through extended electronic states at germanium surface (2009)
  • Author(s): K. Tomatsu, K. Nakatsuji, M. Yamada, F. Komori, B. Yan, C. Yam, and T. Frauenheim, Y. Xu, and W. Duan
  • Journal Title: Phys. Rev Volume: 103 Pages: 1-4
  • NAID: 130005038214
• [Journal Article] Local vibrational excitation through extended electronic states at germanium surface. (2009)
  • Author(s): Kota Tomatsu
  • Journal Title: Phys.Rev.Lett. 103
  • Peer Reviewed
• [Presentation] 傾斜SiC上グラフェンπ電子状態の時間分解光電子分光 (2012)
  • Author(s): 中辻寛,飯盛拓嗣,吉村継生,石田行章,山本貴士,辛埴,金井輝人,渡部俊太郎,栗栖悠輔,梶原隆司,田中悟,小森文夫
  • Organizer: 日本物理学会
  • Place of Presentation: 関西学院大学
  • Year and Date: 2012-03-26
• [Presentation] 微傾斜SiC上水素化グラフェンのπ電子状態 (2012)
  • Author(s): 小森文夫(代表)
  • Organizer: 日本物理学会
  • Place of Presentation: 関西学院大学
  • Year and Date: 2012-03-26
• [Presentation] 微傾斜SiC上グラフェンπ電子状態の時間分解光電子分光II (2012)
  • Author(s): 中辻寛
  • Organizer: 日本物理学会
  • Place of Presentation: 関西学院大学
  • Year and Date: 2012-03-26
• [Presentation] Co吸着Bi_<1-x>Sb_x(111)表面の走査トンネル分光 (2012)
  • Author(s): 小森文夫(代表)
  • Organizer: 日本物理学会
  • Place of Presentation: 関西学院大学
  • Year and Date: 2012-03-25
• [Presentation] Ge(111)微傾斜面のAu蒸着量に依る1次元原子構造の変化 (2012)
  • Author(s): 小森文夫(代表)
  • Organizer: 日本物理学会
  • Place of Presentation: 関西学院大学
  • Year and Date: 2012-03-24
• [Presentation] SiC(1-104)面上のグラフェン構造とラマン分光特性 (2012)
  • Author(s): 田中悟(代表)
  • Organizer: 第59回応用物理学会
  • Place of Presentation: 早稲田大
  • Year and Date: 2012-03-17
• [Presentation] MBE法によるSiCナノファセット表面へのグラフェン成長 (2012)
  • Author(s): 田中悟(代表)
  • Organizer: 第59回応用物理学会
  • Place of Presentation: 早稲田大
  • Year and Date: 2012-03-15
• [Presentation] Deformation of graphene π band on one-dimensionally-modulated SiC substrate (2012)
  • Author(s): Fumio Komori
  • Organizer: I-J Seminar on Graphene
  • Place of Presentation: Tokyo (Japan)(招待講演)
  • Year and Date: 2012-03-02
• [Presentation] Quasiparticle Interference on Bi_<1-x>_Sb_x Topological Insulator Observed with Scanning Tunneling Spectroscopy (2011)
  • Author(s): Fumio Komori(代表)
  • Organizer: ISSS-6
  • Place of Presentation: Tokyo (Japan)
  • Year and Date: 2011-12-14
• [Presentation] Uniaxial deformation of graphene π band on a vicinal SiC(0001) substrate (2011)
  • Author(s): Fumio Komori
  • Organizer: ISSS-6
  • Place of Presentation: Tokyo (Japan)
  • Year and Date: 2011-12-12
• [Presentation] Two dimensional metallic states and their modification on Ge(111) √3x√3-Au Surface (2011)
  • Author(s): Kan Nakatsuji
  • Organizer: ISSS-6
  • Place of Presentation: Tokyo (Japan)
  • Year and Date: 2011-12-12
• [Presentation] トポロジカル絶縁体Bi_<1-x>Sb_x表面の走査トンネル分光測定 (2011)
  • Author(s): 小森文夫(代表)
  • Organizer: 表面・界面スペクトロスコピー2011
  • Place of Presentation: 富山大学
  • Year and Date: 2011-12-02
• [Presentation] Graphene nanostructures on vicinal SiC surfaces (2011)
  • Author(s): Satoru Tanaka
  • Organizer: Materials Research Society Fall Meeting 2011
  • Place of Presentation: Boston (U.S.A.)
  • Year and Date: 2011-11-30
• [Presentation] 微傾斜SiC上に成長したグラフェンπ^*電子状態の異方性 (2011)
  • Author(s): 小森文夫
  • Organizer: 放射光表面シンポジウム 2011
  • Place of Presentation: 大阪電通大学
  • Year and Date: 2011-11-26
• [Presentation] Graphene Band Engineering on One-Dimensionally-Modulated SiC Substrate (2011)
  • Author(s): K. Nakatsuji, T. Yoshimura, K. Morita, S. Tanaka and F. Komori
  • Organizer: AVS 58th International Symposium
  • Place of Presentation: Nashville, U. S. A.
  • Year and Date: 2011-10-31
• [Presentation] Graphene Band Engineering on One-Dimensionally-Modulated SiC Substrate (2011)
  • Author(s): Fumio Komori
  • Organizer: AVS 58th International Symposium
  • Place of Presentation: Nashville (U.S.A.)
  • Year and Date: 2011-10-31
• [Presentation] Graphene nanoribbonson vicinal SiC surfaces (2011)
  • Author(s): 田中悟
  • Organizer: Recent Progress in Graphene Research 2011
  • Place of Presentation: ソウル(韓国)(招待講演)
  • Year and Date: 2011-10-05
• [Presentation] Formation of graphene nanostructures on vicinal SiC surfaces (2011)
  • Author(s): 田中悟
  • Organizer: SSDM2011
  • Place of Presentation: 名古屋(招待講演)
  • Year and Date: 2011-09-29
• [Presentation] Bi_<1-x>Sb_x(111)表面における準粒子干渉の走査トンネル分光測定 (2011)
  • Author(s): 小森文夫(代表)
  • Organizer: 日本物理学会
  • Place of Presentation: 富山大学
  • Year and Date: 2011-09-24
• [Presentation] 微傾斜SiC上グラフェンπ電子状態の異方性 (2011)
  • Author(s): 小森文夫(代表)
  • Organizer: 日本物理学会
  • Place of Presentation: 富山大学
  • Year and Date: 2011-09-22
• [Presentation] 微傾斜SiC上グラフェンπ電子状態の時間分解光電子分光 (2011)
  • Author(s): 中辻寛
  • Organizer: 日本物理学会
  • Place of Presentation: 富山大学
  • Year and Date: 2011-09-22
• [Presentation] Ge(001)-Au表面における1次元鎖構造の電子バンド形状 (2011)
  • Author(s): 中辻寛
  • Organizer: 日本物理学会
  • Place of Presentation: 富山大学
  • Year and Date: 2011-09-22
• [Presentation] Au/Ge(111)表面のSTMによる原子構造研究 (2011)
  • Author(s): 小森文夫(代表)
  • Organizer: 日本物理学会
  • Place of Presentation: 富山大学
  • Year and Date: 2011-09-21
• [Presentation] Metallic surface state at a single-domain Au-adsorbed Ge(001) surface studied by angle-resolved photoelectron spectroscopy (2011)
  • Author(s): K. Nakatsuji, Y. Motomura, R. Nikura, T. Iimori, T. Yoshimura, Y. Iwasaki and F. Komori
  • Organizer: ECOSS-28
  • Place of Presentation: Wroclaw, Poland
  • Year and Date: 2011-08-31
• [Presentation] Metallic surface state at a single-domain Au-adsorbed Ge(001) surface studied by angle-resolved photoelectron spectroscopy (2011)
  • Author(s): Kan Nakatsuji
  • Organizer: ECOSS-28
  • Place of Presentation: Wroclaw (Poland)
  • Year and Date: 2011-08-31
• [Presentation] SiC上グラフェンナノ構造の形成と電子物性 (2011)
  • Author(s): 田中悟
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形(招待講演)
  • Year and Date: 2011-08-30
• [Presentation] Formation of epitaxial grapehene nanostructures and correlation with electronic structures (2011)
  • Author(s): 田中悟
  • Organizer: 第30回電子材料シンポジウム
  • Place of Presentation: 滋賀(招待講演)
  • Year and Date: 2011-07-01
• [Presentation] Reversible Atom Switch Through Electron-phonon Coupling at Ge(001) Surface (2011)
  • Author(s): Fumio Komori
  • Organizer: ICMAT 2011
  • Place of Presentation: Singapole (Singapole)(招待講演)
  • Year and Date: 2011-06-27
• [Presentation] Reversible atom manipulation by tunneling carrier injection (2011)
  • Author(s): Fumio Komori
  • Organizer: The 29^<th> International Brand Ritchie Workshop on Particle Penetration Phenomena and Excitations of Solids
  • Place of Presentation: Matsue (Japan)(招待講演)
  • Year and Date: 2011-05-12
• [Presentation] 傾斜SiC上の埋め込まれたグラフェンナノリボンのラマン分光特性 (2011)
  • Author(s): 小森文夫
  • Organizer: 日本物理学会
  • Place of Presentation: 新潟大学
  • Year and Date: 2011-03-26
• [Presentation] 微傾斜SiC上グラフェンの電子状態 (2011)
  • Author(s): 小森文夫(代表)
  • Organizer: 日本物理学会
  • Place of Presentation: 新潟大学
  • Year and Date: 2011-03-26
• [Presentation] グラフェン/SiC(000-1)界面構造と回転ドメインの形 (2011)
  • Author(s): 田中悟(代表)
  • Organizer: 日本応用物理学会関係連合講演会
  • Place of Presentation: 東海大学
  • Year and Date: 2011-03-26
• [Presentation] 直接通電加熱における微傾斜SiC表面上エピタキシャルグラフェン成長の電流方向依存性 (2011)
  • Author(s): 田中悟(代表)
  • Organizer: 日本応用物理学会関係連合講演会
  • Place of Presentation: 東海大学
  • Year and Date: 2011-03-26
• [Presentation] MBE法による微傾斜SiC基板へのグラフェン成長 (2011)
  • Author(s): 田中悟(代表)
  • Organizer: 日本応用物理学会関係連合講演会
  • Place of Presentation: 東海大学
  • Year and Date: 2011-03-26
• [Presentation] CVD法によるSiCナノファセット表面上へのグラフェン形成 (2011)
  • Author(s): 田中悟(代表)
  • Organizer: 日本応用物理学会関係連合講演会
  • Place of Presentation: 東海大学
  • Year and Date: 2011-03-26
• [Presentation] 微傾斜Ge(001)-Au表面における1次元鎖構造と電子状態 (2011)
  • Author(s): 中辻寛
  • Organizer: 日本物理学会
  • Place of Presentation: 新潟大学
  • Year and Date: 2011-03-25
• [Presentation] Au/Ge(111)表面のSTM観察 (2011)
  • Author(s): 小森文夫(代表)
  • Organizer: 日本物理学会
  • Place of Presentation: 新潟大学
  • Year and Date: 2011-03-25
• [Presentation] Self-organized graphene nanoribbons on vicinal SiC surfaces (2011)
  • Author(s): S.Tanaka
  • Organizer: Graphene Workshop in Tsukuba
  • Place of Presentation: つくば市
  • Year and Date: 2011-01-17
• [Presentation] 微傾斜SiC(0001)表面に成長したグラフェンのπ電子状態 (2010)
  • Author(s): 中辻寛
  • Organizer: 日本表面科学会放射光表面科学部会シンポジウム
  • Place of Presentation: 東工大
  • Year and Date: 2010-12-11
• [Presentation] Au吸着Ge(001)1次元鎖表面の構造と電子状態 (2010)
  • Author(s): 小森文夫
  • Organizer: 日本表面科学会放射光表面科学部会シンポジウム
  • Place of Presentation: 東工大
  • Year and Date: 2010-12-10
• [Presentation] 微傾斜SiC(0001)表面に成長したグラフェンの電子状態 (2010)
  • Author(s): 中辻寛
  • Organizer: 表面・界面スペクトロスコピー2010
  • Place of Presentation: 筑波山
  • Year and Date: 2010-12-05
• [Presentation] Enhanced anisotropic growth of graphene on vicinal SiC surfaces-Formation of graphene nanoribbons (2010)
  • Author(s): K. Morita, S. Tanaka, N. Uehara, K. Nakatsuji, and F. Komori
  • Organizer: MRS Fall Meeting
  • Place of Presentation: Boston, Nov
  • Year and Date: 2010-11-30
• [Presentation] Enhanced anisotropic growth of graphene on vicinal SiC surfaces-Formation of graphene nanoribbons (2010)
  • Author(s): Satoru Tanaka
  • Organizer: MRS Fall Meeting
  • Place of Presentation: Boston, U.S.A.
  • Year and Date: 2010-11-30
• [Presentation] Ge表面の広がった電子状態へのトンネルキャリア注入による非局所振動励起 (2010)
  • Author(s): 小森文夫
  • Organizer: 表面科学会弟30回学術講演会
  • Place of Presentation: 大阪大学
  • Year and Date: 2010-11-06
• [Presentation] Ge(001)-Au表面の電子状態 (2010)
  • Author(s): 中辻寛
  • Organizer: 表面科学会弟30回学術講演会
  • Place of Presentation: 大阪大学
  • Year and Date: 2010-11-06
• [Presentation] SiCナノ表面構造とヘテロエピタキシー (2010)
  • Author(s): 田中悟
  • Organizer: 表面科学会弟30回学術講演会
  • Place of Presentation: 大阪大学
  • Year and Date: 2010-11-04
• [Presentation] Self-organized Graphene nanoribbons on Vicinal SiC surfaces (2010)
  • Author(s): Satoru Tanaka
  • Organizer: The 2nd International Symposium on Graphene Devices : Technology, Physics, and Modeling
  • Place of Presentation: 東北大学
  • Year and Date: 2010-10-27
• [Presentation] STMを用いた局所反応の電子励起とその観察 (2010)
  • Author(s): 小森文夫
  • Organizer: 分子研研究会
  • Place of Presentation: 分子研
  • Year and Date: 2010-10-06
• [Presentation] 傾斜SiC上グラフェンの角度分解光電子分光 (2010)
  • Author(s): 中辻寛
  • Organizer: 日本物理学会
  • Place of Presentation: 大阪府立大学
  • Year and Date: 2010-09-25
• [Presentation] 傾斜SiC上埋め込まれたグラフェンナノリボンの構造とラマン分光特性 (2010)
  • Author(s): 田中悟(代表)
  • Organizer: 日本物理学会
  • Place of Presentation: 大阪府立大学
  • Year and Date: 2010-09-25
• [Presentation] Ge(111)√<3>×√<3>-Au表面の電子状態II (2010)
  • Author(s): 中辻寛
  • Organizer: 日本物理学会
  • Place of Presentation: 大阪府立大学
  • Year and Date: 2010-09-23
• [Presentation] ナノ周期構造を有するSiC(000-1)面上のエピタキシャルグラフェンの形成 (2010)
  • Author(s): 田中悟(代表)
  • Organizer: 日本応用物理学会学術講演会
  • Place of Presentation: 長崎大学
  • Year and Date: 2010-09-16
• [Presentation] 微傾斜SiC表面上に形成するエピタキシャルグラフェンの異方性成長モードーオフ方向依存性 (2010)
  • Author(s): 田中悟(代表)
  • Organizer: 日本応用物理学会学術講演会
  • Place of Presentation: 長崎大学
  • Year and Date: 2010-09-16
• [Presentation] 微傾斜SiC上エピタキシャルグラフェンの表面モフォロジー制御 (2010)
  • Author(s): 田中悟(代表)
  • Organizer: 日本応用物理学会学術講演会
  • Place of Presentation: 長崎大学
  • Year and Date: 2010-09-16
• [Presentation] 微傾斜SiC基板上エピタキシャルグラフェンリボンのラマン分光測定 (2010)
  • Author(s): 田中悟(代表)
  • Organizer: 日本応用物理学会学術講演会
  • Place of Presentation: 長崎大学
  • Year and Date: 2010-09-16
• [Presentation] Two dimensional electronic structure of Ge(111)√<3>×√<3>-Au surface (2010)
  • Author(s): K. Nakatsuji, R. Niikura, Y. Shibata, M. Yamada, T. Iimori, Y. Oda, A. Ishii and F. Komori
  • Organizer: ECOSS-27
  • Place of Presentation: Groningen
  • Year and Date: 2010-08-30
• [Presentation] Two dimensional electronic structure of Ge(111)√<3>×√<3>-AU surface (2010)
  • Author(s): Kan Nakatsuji
  • Organizer: ECOSS27
  • Place of Presentation: Groningen, the Netherlands
  • Year and Date: 2010-08-30
• [Presentation] Nonlocal atom manipulation through coupling between local vibration mode and extended electronic state at Ge(001) surface (2010)
  • Author(s): Fumio Komori
  • Organizer: IVC-18
  • Place of Presentation: Beijing, China
  • Year and Date: 2010-08-25
• [Presentation] Remote and reversible atom manipulation through electron-phonon coupling at Ge(001) surface (2010)
  • Author(s): Fumio Komori
  • Organizer: SSSJ-A3 Foresight Joint Symposium on Nanomaterials and Nanostructures
  • Place of Presentation: Univ.of Tokyo
  • Year and Date: 2010-07-06
• [Presentation] Two dimensional metallic state and its modification on Ge(111)√<3>×√<3>-Au surface (2010)
  • Author(s): Kan Nakatsuji
  • Organizer: SSSJ-A3 Foresight Joint Symposium on Nanomaterials and Nanostructures
  • Place of Presentation: Univ.of Tokyo
  • Year and Date: 2010-07-05
• [Presentation] Growth mechanisms of graphene on vicinal SiC surfaces (2010)
  • Author(s): Satoru Tanaka
  • Organizer: E-MRS spring Meeting
  • Place of Presentation: Strasbourg, France
  • Year and Date: 2010-06-08
• [Presentation] SiCナノ表面上のエピタキシャルグラフェンの形成と評価 (2010)
  • Author(s): 田中悟
  • Organizer: 日本物理学会
  • Place of Presentation: 岡山大学
  • Year and Date: 2010-03-22
• [Presentation] SiC微斜面上エピタキシャル数層グラフェンの電子状態 (2010)
  • Author(s): 小森文夫(代表)
  • Organizer: 日本物理学会
  • Place of Presentation: 岡山大学
  • Year and Date: 2010-03-21
• [Presentation] Ge(111)√<3>×√<3-Au>表面の電子状態 (2010)
  • Author(s): 中辻寛(代表)
  • Organizer: 日本物理学会
  • Place of Presentation: 岡山大学
  • Year and Date: 2010-03-20
• [Presentation] 固体表面における電子励起ダイナミクスとナノパターン形成 (2010)
  • Author(s): 小森文夫
  • Organizer: 次世代ナノ統合シミュレーションソフトウエア研究会「新物質とエネルギー」
  • Place of Presentation: 東京フォーラム
  • Year and Date: 2010-03-10
• [Presentation] 微斜面SiC基板に成長したグラフェンの電子状態 (2010)
  • Author(s): 中辻寛(代表)
  • Organizer: 第2回グラフェン研究会
  • Place of Presentation: 九州大学
  • Year and Date: 2010-01-29
• [Presentation] SiC上のグラフェン-構造と電子状態 (2010)
  • Author(s): 小森文夫
  • Organizer: 第3回ナノカーボン研究会
  • Place of Presentation: 新世代研究所(東京)
  • Year and Date: 2010-01-15
• [Presentation] Au/Ge表面の電子状態 (2009)
  • Author(s): 中辻寛(代表)
  • Organizer: 物性研究所短期研究会
  • Place of Presentation: 東京大学
  • Year and Date: 2009-12-18
• [Presentation] Au/Ge(001)上のナノワイヤの構造と電子状態 (2009)
  • Author(s): 小森文夫(代表)
  • Organizer: 表面・界面スペクトロスコピー2009
  • Place of Presentation: 札幌
  • Year and Date: 2009-12-04
• [Presentation] Electronic structure of few layer graphene grown on vicinal SiC(0001) surface (2009)
  • Author(s): 中辻寛(代表)
  • Organizer: A3 Foresight Program Matsushima Seminar on Nanomaterials
  • Place of Presentation: 松島
  • Year and Date: 2009-11-16
• [Presentation] SiCナノ表面上のエピタキシャルグラフェン (2009)
  • Author(s): 中田悟
  • Organizer: 物性研究所短期研究会
  • Place of Presentation: 東京大学
  • Year and Date: 2009-10-23
• [Presentation] SiC上グラフェンの電子状態測定 (2009)
  • Author(s): 中辻寛(代表)
  • Organizer: 物性研究所短期研究会
  • Place of Presentation: 東京大学
  • Year and Date: 2009-10-23
• [Presentation] Au/Ge(001)及び(111)表面の電子状態 (2009)
  • Author(s): 中辻寛(代表)
  • Organizer: 日本物理学会
  • Place of Presentation: 熊本大学
  • Year and Date: 2009-09-27
• [Presentation] 傾斜SiC上グラフェン空間層厚制御と電子状態 (2009)
  • Author(s): 田中悟(代表)
  • Organizer: 日本物理学会
  • Place of Presentation: 熊本大学
  • Year and Date: 2009-09-26
• [Presentation] Ge(001)表面における局所ホール注入によるGeダイマー振動励起 (2009)
  • Author(s): 小森文夫(代表)
  • Organizer: 日本物理学会
  • Place of Presentation: 熊本大学
  • Year and Date: 2009-09-25
• [Presentation] 微傾斜6H-SiC(0001)上に形成するエピタキシャルグラフェンの層数制御と電子状態 (2009)
  • Author(s): 田中悟(代表)
  • Organizer: 応用物理学会
  • Place of Presentation: 富山大学
  • Year and Date: 2009-09-11
• [Presentation] Anisotropic two-dimensional metallic state on Ge(001)-Au surface (2009)
  • Author(s): 中辻寛(代表)
  • Organizer: 26th European conference on surface science
  • Place of Presentation: パルマ(イタリア)
  • Year and Date: 2009-08-31
• [Presentation] Ge(001)表面におけるホール局在によるダイマー振動励起 (2009)
  • Author(s): 小森文夫
  • Organizer: 物性研究所ワークショップ
  • Place of Presentation: 東京大学
  • Year and Date: 2009-06-19
• [Remarks]
  • URL: http://komori.issp.u-tokyo.ac.jp/