Controlling of hetero-, nano-structures andtheir properties and band engineering using InN and related alloys

• Project/Area Number: 21246004
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Ritsumeikan University
• Principal Investigator: NANISHI Yasushi 立命館大学, 立命館グローバル・イノベーション研究機構, 教授 (40268157)
• Co-Investigator(Kenkyū-buntansha): ARAKI Tsutomu 立命館大学, 理工学, 准教授 (20312126)
• Co-Investigator(Renkei-kenkyūsha): YAMAGUCHI Tomihiro 立命館大学, 総合科学技術研究機構, ポストドクトラルフェロー (50454517) ; KANEKO Masamitsu 立命館大学, 総合理工学研究機構, ポストドクトラルフェロー (70374709) ; WANG Ke 立命館大学, 総合科学技術研究機構, ポストドクトラルフェロー (60532223) ; KIKAWA Jyunjiro 立命館大学, 総合理工学研究機構, 教授 (70469196)
• Project Period (FY): 2009 – 2012
• Project Status: Completed (Fiscal Year 2012)
• Budget Amount: ¥45,630,000 (Direct Cost: ¥35,100,000、Indirect Cost: ¥10,530,000); Fiscal Year 2012: ¥7,280,000 (Direct Cost: ¥5,600,000、Indirect Cost: ¥1,680,000); Fiscal Year 2011: ¥7,280,000 (Direct Cost: ¥5,600,000、Indirect Cost: ¥1,680,000); Fiscal Year 2010: ¥23,270,000 (Direct Cost: ¥17,900,000、Indirect Cost: ¥5,370,000); Fiscal Year 2009: ¥7,800,000 (Direct Cost: ¥6,000,000、Indirect Cost: ¥1,800,000)
• Keywords: ヘテロ構造 / InN / MBE / RF-MBE / InGaN / DERI / 窒化インジウム / 分子線エピタキシー法 / 窒化インジウムガリウム / ドライエッチング / DERI法 / 極性 / p型ドーピング / MIS構造 / ウェットエッチング / KOH / オーミック電極 / ショットキー電極 / ケルビン力顕微鏡 / X線光電子分光法

Research Abstract

Using novel growth method of high-quality InN called DERI (Droplet Elimination by Radical beam Irradiation), we have developed thick and high-quality crystal growth of InN and InGaN, precise control of InGaN composition using radical monitoring, p-type conductivity by Mg doping, fabrication of hetero-, and nano-structures basedon InGaN/InGaN, and basic process for InN-based optoelectronic devices.

Research Products

• [Journal Article] Application of DERI Method to InN/InGaN MQW, Thick InGaN and InGaN/InGaN MQW Structure Growth (2013)
  • Author(s): T. Yamaguchi, K. Wang, T. Araki, T. Honda, E. Yoon, Y. Nanishi
  • Journal Title: Proceedings of SPIE "Gallium Nitride Materials and Devices VIII Volume: 8625巻 Pages: 862502-862502
  • DOI: 10.1117/12.2007258
  • Peer Reviewed
• [Journal Article] P-type InGaN across the entire alloy composition range (2013)
  • Author(s): K. Wang, T. Araki, K. M. Yu, T. Katsuki, M. A. Mayer, E. Alarcon-Llado, J. W. Ager, III, W. Walukiewicz and Y. Nanishi
  • Journal Title: Appl. Phys. Lett. Volume: 102巻 Issue: 10
  • DOI: 10.1063/1.4795718
  • Peer Reviewed
• [Journal Article] Investigation of the Near-Surface Structures of Polar InN Films by Chemicalstate-Discriminated Hard X-Ray Photoelectron Diffraction (2013)
  • Author(s): A. L. Yang, Y. Yamashita, M. Kobata, T. Matsushita, H. Yoshikawa, I. Pis, M. Imura, T. Yamaguchi, O. Sakata, Y. Nanishi, and K. Kobayashi
  • Journal Title: Appl. Phys. Lett. Volume: 102
  • Peer Reviewed
• [Journal Article] Fabrication of Nano-structure of A-plane InN on Patterned A-plane GaN Template by ECR-MBE (2012)
  • Author(s): T. Araki, S. Yamashita, T. Yamaguchi, E. Yoon, and Y. Nanishi
  • Journal Title: physica status solidi (a) Volume: 209巻 Issue: 3 Pages: 447-450
  • DOI: 10.1002/pssa.201100520
  • Peer Reviewed
• [Journal Article] Double Resonance Raman Effects in InN Nanowires (2012)
  • Author(s): N. Domenech-Amador, R. Cusco, R. Calarco, T. Yamaguchi, Y. Nanishi and L. Artus
  • Journal Title: physica status solidi (RRL) - Rapid Research Letters Volume: 6 Pages: 160-162
  • Peer Reviewed
• [Journal Article] Surface Acoustic Waves and Elastic Constants of InN Epilayers Determined by Brillouin Scattering (2012)
  • Author(s): R. J. Jimenez, R. Cusco, N. Domenech-Amador, C. Prieto, T. Yamaguchi, Y. Nanishi, L. Artus
  • Journal Title: physica status solidi (RRL) - Rapid Research Letters Volume: 6 Pages: 256-258
  • Peer Reviewed
• [Journal Article] Temperature dependence of Mg-H local vibrational modes in heavily doped InN:Mg (2012)
  • Author(s): R. Cusco, N. Dome`nech-Amador, L. Artus, K. Wang, T. Yamaguchi, and Y. Nanishi
  • Journal Title: J. Appl. Phys. Volume: 112
  • Peer Reviewed
• [Journal Article] New Low-Temperature Growth Method for High-Quality Low-Temperature GaN Layer by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy (2012)
  • Author(s): I. -S. Shin, K. Wang, T. Araki, E. Yoon, and Y. Nanishi
  • Journal Title: Applied Physics Express Volume: 5
  • NAID: 10031140432
  • Peer Reviewed
• [Journal Article] MBE法による配列制御InNナノコラム成長 (2012)
  • Author(s): 荒木努、山口智広、名西〓之
  • Journal Title: 日本結晶成長学会誌 Volume: 38 Pages: 47-53
  • Peer Reviewed
• [Journal Article] Strong Correlation Between Oxygen Donor and Near-Surface Electron Accumulation in Undoped and Mg-Doped In-Polar InN Films (2012)
  • Author(s): A.Yang, Y.Yamashita, T.Yamaguchi, M.Imura, M.Kaneko, O.Sakata, Y.Nanishi, K.Kobayashi
  • Journal Title: Applied Physics Express Volume: 5 Issue: 3 Pages: 031002-031002
  • DOI: 10.1143/apex.5.031002
  • NAID: 10030510922
  • Peer Reviewed
• [Journal Article] Application of Droplet Elimination Process by Radical -Beam Irradiation to InGaN Growth and Fabrication of InN/InGaN Periodic Structure (2011)
  • Author(s): T. Yamaguchi, H. Umeda, T. Araki, and Y. Nanishi
  • Journal Title: Jpn. J. Appl. Phys. Volume: 50巻 Issue: 4S Pages: 04DH08-04DH08
  • DOI: 10.1143/jjap.50.04dh08
  • NAID: 210000070345
  • Peer Reviewed
• [Journal Article] Growth and Fabrication of InN-based III-nitride Structure Using Droplet Elimination Process by Radical Beam Irradiation (2011)
  • Author(s): T. Yamaguchi, T. Arakiand Y. Nanishi
  • Journal Title: Proceedings of SPIE photonic West 2011 Volume: 7939巻 Pages: 793904-793904
  • DOI: 10.1117/12.874840
  • Peer Reviewed
• [Journal Article] Mg Doped InN and Confirmation of Free Holes in InN (2011)
  • Author(s): K. Wang, N. Miller, R. Iwamoto, T. Yamaguchi, M. A. Mayer, T. Araki, Y. Nanishi, K. M. Yu, E. E. Haller, W. Walukiewicz, J. W. Ager III
  • Journal Title: Appl. Phys. Lett Volume: 98巻 Issue: 4
  • DOI: 10.1063/1.3543625
  • Peer Reviewed
• [Journal Article] In situ Investigation of Growth Mechanism during Molecular Beam Epitaxy of In-Polar InN (2011)
  • Author(s): K. Wang, T. Yamaguchi, T. Araki, E. Yoon, Y. Nanishi
  • Journal Title: Jpn. J. Appl. Phys. Volume: 50巻 Issue: 1S1 Pages: 01AE02-01AE02
  • DOI: 10.1143/jjap.50.01ae02
  • NAID: 210000138257
  • Peer Reviewed
• [Journal Article] Investigation on InN Mole Fraction Fluctuation in InGaN Films Grown by RF-MBE (2011)
  • Author(s): T.Kimura, E.Fukumoto, T.Yamaguchi, K.Wang, M.Kaneko, T.Araki, E.Yoon, Y.Nanishi
  • Journal Title: phys.stat.sol.(c) Volume: 8 Issue: 5 Pages: 1499-1502
  • DOI: 10.1002/pssc.201001203
  • Peer Reviewed
• [Journal Article] Raman Scattering Study of Anharmonic Phonon Decay in InN (2011)
  • Author(s): R.Cusco, L.Artus, T.Yamaguchi, Y.Nanishi
  • Journal Title: Phys.Rev.B. Volume: 83 Issue: 24
  • DOI: 10.1103/physrevb.83.245203
  • Peer Reviewed
• [Journal Article] High-Pressure Raman Scattering in Wurtzite Indium Nitride (2011)
  • Author(s): J.Iba～nez, F.J.Manjon, A.Segura, R.Oliva, R.Cusco, R.Vilaplana, T.Yamaguchi, Y.Nanishi, L.Artus
  • Journal Title: Appl.Phys.Lett. Volume: 99 Issue: 1
  • DOI: 10.1063/1.3609327
  • Peer Reviewed
• [Journal Article] Unintentional Incorporation of Hydrogen in Wurtzite InN with Different Surface Orientations (2011)
  • Author(s): V.Darakchieva, K.Lorenz, M.-Y.Xie, E.Alves, C.L.Hsiao, L.C.Chen, L.W.Tu, W.J.Schaff, T.Yamaguchi, Y.Nanishi
  • Journal Title: J.Appl.Phys. Volume: 110 Issue: 6
  • DOI: 10.1063/1.3642969
  • Peer Reviewed
• [Journal Article] PN junction rectification in electrolyte gated Mg-doped InN (2011)
  • Author(s): E.Alarcon-Llado, M.A.Mayer, B.W.Boudouris, R.A.Segalman, N.Miller, T.Yamaguchi, K.Wang, Y.Nanishi, E.E.Haller, J.W.Ager
  • Journal Title: Appl.Phys.Lett. Volume: 99 Issue: 10
  • DOI: 10.1063/1.3634049
  • Peer Reviewed
• [Journal Article] Mg Doped InN and Confirmation of Free Holes in InN (2011)
  • Author(s): K.Wang, N.Miller, R.Iwamoto, T.Yamaguchi, M.A.Mayer, T.Araki, Y.Nanishi, K.M.Yu, E.E.Haller, W.Walukiewicz, J.W.Ager III
  • Journal Title: Appl.Phys.Lett. Volume: 98
  • Peer Reviewed
• [Journal Article] Growth and Fabrication of InN-based III-nitride Structure Using Droplet Elimination Process by Radical Beam Irradiation (2011)
  • Author(s): T.Yamaguchi, Y.Nanishi
  • Journal Title: Proceedings of SPIE photonic West 2011 Volume: 7939 Pages: 793904-793904
  • Peer Reviewed
• [Journal Article] Application of Droplet Elimination Process by Radical-Beam Irradiationto InGaN Growth and Fabrication of InN/InGaN Periodic Structure (2011)
  • Author(s): T.Yamaguchi, H.Umeda, T.Ataki, Y.Nanishi
  • Journal Title: Jpn.J.Appl.Plays. Volume: 50
  • Peer Reviewed
• [Journal Article] New MBE Growth Method for High Quality InN and Related Alloys Using in Situ Monitoring Technology (2010)
  • Author(s): T. Yamaguchiand Y. Nanishi
  • Journal Title: phys. stat.sol. (a) Volume: 207巻 Issue: 1 Pages: 19-23
  • DOI: 10.1002/pssa.200982638
  • Peer Reviewed
• [Journal Article] Optical Polarization Anisotropy of Nonpolar InN Epilayers (2010)
  • Author(s): K. Wang, T. Yamaguchi, A. Takeda, T. Kimura, K. Kawashima, T. Arakiand Y. Nanishi
  • Journal Title: phys. stat. sol. (a) Volume: 207巻 Issue: 6 Pages: 1356-1360
  • DOI: 10.1002/pssa.200983657
  • Peer Reviewed
• [Journal Article] Optical Polarization Anisotropy of Nonpolar InN Epilayers (2010)
  • Author(s): K.Wang, T.Yamaguchi, A.Takeda, T.Kimura, K.Kawashima, T.Araki, Y.Nanishi
  • Journal Title: phys.stat.sol.(a) Volume: 207 Pages: 1356-1360
  • Peer Reviewed
• [Journal Article] RF-MBE Growth of InN/InGaN MQW Structures by DERI and Their Characterization (2010)
  • Author(s): T.Araki, H.Umeda, T.Yamaguchi, T.Sakamoto, E.Yoon, Y.Nanishi
  • Journal Title: Proceedings of 22nd International Conference on Indium Phosphide and Related Materials (IPRM 2010) Pages: 92-95
  • Peer Reviewed
• [Journal Article] In situ Investigation of Growth Mechanism during Molecular Beam Epitaxy of In-Polar InN (2010)
  • Author(s): K.Wang, T.Yamaguchi, T.Araki, E.Yoon, Y.Nanishi
  • Journal Title: Jpn.J.Appl.Phys. Volume: 50
  • NAID: 210000138257
  • Peer Reviewed
• [Journal Article] Electronic Structure of Wurtzite and Rocksalt InN Investigated by Optical Absorption under Hydrostatic Pressure (2010)
  • Author(s): J.Ibanez, A.Segura, F.J.Manjon, L.Artus, T.Yamaguchi, Y.Nanishi
  • Journal Title: Appl.Phys.Lett. Volume: 96
  • Peer Reviewed
• [Journal Article] Structural Anisotropy of Nonpolar and Semipolar InN Epitaxial Layers (2010)
  • Author(s): V.Darakchieva, M.-Y.Xie, N.Franco, F.Giuliani, B.Nunes, E.Alves, C.L.Hsiao, L.C.Chen, T.Yamaguchi, Y.Takagi, K.Kawashima, Y.Nanishi
  • Journal Title: J.Appl.Phys. Volume: 108
  • Peer Reviewed
• [Journal Article] Hydrogen in InN : a Ubiquitous Phenomenon in Molecular Beam Epitaxy Grown Material (2010)
  • Author(s): V.Darakchieva, K.Lorenz, N.P.Barradas, E.Alves, B.Monemar, M.Schubert, N.Franco, C.L Hsiao, L.C.Chen, J.Schaff, T.Yamaguchi, Y.Nanishi
  • Journal Title: Appl.Phys.Lett. 96
  • Peer Reviewed
• [Journal Article] Optical Polarization Anisotropy of Nonpolar InN Epilayers (2010)
  • Author(s): K.Wang, T.Yamaguchi, A.Takeda, T.Kimura, K.Kawashima, T.Araki, Y.Nanishi
  • Journal Title: phys.stat.sol.(a) (印刷中(掲載決定))
  • Peer Reviewed
• [Journal Article] Indium Droplet Elimination by Radical Beam Irradiation for Reproducible and High-Quality Growth of InN by RF Molecular Beam Epitaxy (2009)
  • Author(s): T. Yamaguchiand Y. Nanishi
  • Journal Title: Applied Physics Express Volume: 2巻 Pages: 051001-051001
  • DOI: 10.1143/apex.2.051001
  • NAID: 10025085943
  • Peer Reviewed
• [Journal Article] Fabrication of Position-Controlled InN Nanocolumns by ECR-MBE (2009)
  • Author(s): T.Araki, D.Fukuoka, H.Tamiya, S.Harui, T.Yamaguchi, H.Miyake, K.Hiramatsu, Y.Nanishi
  • Journal Title: SPIE Photonics West 2009 Proceedings 7216
  • Peer Reviewed
• [Journal Article] Growth and Characterization of N-Polar and In-Polar InN Films by RF-MBE (2009)
  • Author(s): T.Yamaguchi, D.Muto, T.Araki, Y.Nanishi
  • Journal Title: J.Cryst.Growth 311 Pages: 2780-2782
  • Peer Reviewed
• [Journal Article] Indium Droplet Elimination by Radical Beam Irradiation for Reproducible and High-Quality Growth of InN by RF Molecular Beam Epitaxy (2009)
  • Author(s): T.Yamaguchi, Y.Nanishi
  • Journal Title: Applied Physics Express 2
  • NAID: 10025085943
  • Peer Reviewed
• [Journal Article] New MBE Growth Method for High Quality InN and Related Alloys Using in Situ Monitoring Technology (2009)
  • Author(s): T.Yamaguchi, Y.Nanishi
  • Journal Title: phys.stat.sol.(a) 207 Pages: 19-23
  • Peer Reviewed
• [Journal Article] Raman-Scattering Study of the Long-Wavelength Longitudinal-Optical-Phonon-Plasmon Coupled Modes in High-Mobility InN Layers (2009)
  • Author(s): R.Cusco, J.Ibanez, E.Alarcon L.Artus, T.Yamaguchi, Y.Nanishi
  • Journal Title: Phys.Rev.B 79
  • Peer Reviewed
• [Journal Article] Photoexcited Carriers and Surface Recombination Velocity in InN Epilayers : A Raman Scattering Study (2009)
  • Author(s): R.Cusco, J.Ibanez, E.Alarcon L.Artus, T.Yamaguchi, Y.Nanishi
  • Journal Title: Phys.Rev.B. 80
  • Peer Reviewed
• [Journal Article] RF-MBE法によるr面(10-12)Sapphire基板上、半極性面InNの結晶成長 (2009)
  • Author(s): 中谷佳津彦、川島圭介、山口智広、武藤大祐、荒木努、名西〓之
  • Journal Title: 電気学会論文誌C 電子・情報・システム部門誌 129 Pages: 1974-1977
  • NAID: 10025533035
  • Peer Reviewed
• [Journal Article] Electron Accumulation at Nonpolar and Semipolar Surfaces of Wurtzite InN from Generalized Infrared Ellipsometry (2009)
  • Author(s): V.Darakchieva, M.Schubert, T.Hofmann, B.Monemar, Ching-Lien Hsiao, Ting-Wei Liu, Li-Chyong Chen, W.J.Schaff, Y.Takagi, Y.Nanishi
  • Journal Title: Appl.Phys.Lett. 95
  • Peer Reviewed
• [Journal Article] (2009)
  • Author(s): Y.Nanishi, T.Araki, T.Yamaguchi
  • Journal Title: "Indium Nitride and Related Alloys" Chapter 1 Molecular-Beam Epitaxy of InN( edited by T.D.Veal, C.F.McConville, and W.J.Schaff)(CRC) Pages: 1-50
• [Presentation] Recent Progress on InN and InGaN Growth for Future Optoelectronic Devices (2013)
  • Author(s): Y. Nanishi, T. Yamaguchi, K. Wang, T. Arakiand E. Yoon
  • Organizer: Conference on LED and Its Industrial Application (LEDIA-13)
  • Place of Presentation: パシフィコ横浜(神奈川県)
  • Year and Date: 2013-04-23
• [Presentation] Recent Development of Growth and Characterization of InN, In-rich InGaN and Those Nano-structures (2012)
  • Author(s): Y. Nanishi, T. Yamaguchi, K. Wang, T. Arakiand E. Yoon
  • Organizer: IEEE International Conference on Solid-State and Integrated Circuit Technology、発表年月日
  • Place of Presentation: 西安(中国)
  • Year and Date: 2012-10-31
• [Presentation] Toward Longer Wavelength and Higher Speed -Challenge to Utilize Full Span of Nitride Semiconductors-Band gap- (2012)
  • Author(s): Y. Nanishi, T. Yamaguchi, K. Wang, T. Arakiand E. Yoon
  • Organizer: 2012 Fall Meeting of the Korean Ceramic Society
  • Place of Presentation: 大田(韓国)
  • Year and Date: 2012-10-19
• [Presentation] DERI法を応用したInGaN/InGaN量子井戸構造の作製 (2012)
  • Author(s): 上松尚、山口智広、荒木努、名西〓之
  • Organizer: 2012年春季第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学(東京都)
  • Year and Date: 2012-03-17
• [Presentation] RF-MBE法InN成長における窒素プラズマパワー依存性 (2012)
  • Author(s): 荒木努、上松尚、油谷匡胤、阪口順一、齊藤巧、名西〓之, T.Fujishima、E.Matioli、T.Palacios
  • Organizer: 2012年春季第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学(東京都)
  • Year and Date: 2012-03-17
• [Presentation] ラジカルモニタリング技術を応用したDERI法InGaN成長の検討 (2012)
  • Author(s): 阪口順一、上松尚、油谷匡胤、齊藤巧、山口智広、荒木努、名西〓之、T.Fujishima、E.Matioli、T.Palacios
  • Organizer: 2012年春季第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学(東京都)
  • Year and Date: 2012-03-17
• [Presentation] InN Overgrowth Through in Situ A1N Nano-Mask on Sapphire Substrate (2012)
  • Author(s): 王科、荒木努、武内道一、山口智広、名西〓之
  • Organizer: 2012年春季第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学(東京都)
  • Year and Date: 2012-03-17
• [Presentation] 窒化物半導体新領域開拓にむけての材料技術最近の展開 (2012)
  • Author(s): 名西〓之、山口智広、王科、荒木努、E.Yoon
  • Organizer: 2012年春季第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学(東京都)(招待講演)
  • Year and Date: 2012-03-16
• [Presentation] A Natural PN Junction in Mg-Doped In-Polar InN Film Directly Detected by High Resolution Angle-Resolved Hard X-Ray Photoelectron Spectroscopy (2012)
  • Author(s): A.L.Yang, Y.Yamashita, T.Yamaguchi, M.Imura, M.Kaneko, O.Sakata, Y.Nanishi, K.Kobayashi
  • Organizer: 2012年春季第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学(東京都)
  • Year and Date: 2012-03-16
• [Presentation] Free Holes in Mg Doped InN Confirmed by Thermopower Experiments (2012)
  • Author(s): K.Wang, T.Yamaguchi, T.Araki, Y.Nanishi, N.Miller, M.Mayer, J.W.Ager, K.M.Yu, W.Walukiewicz
  • Organizer: 4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 2012
  • Place of Presentation: 中部大学(愛知県)
  • Year and Date: 2012-03-08
• [Presentation] Importance of Advanced Plasma for Frontier Nitride Semiconductor Technologies (2012)
  • Author(s): Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, E.Yoon
  • Organizer: 4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 2012
  • Place of Presentation: 中部大学(愛知県)(基調講演)
  • Year and Date: 2012-03-05
• [Presentation] Application of DERI Method to thick InGaN and InN/InGaN MQW structure Growth (2012)
  • Author(s): Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, E.Yoon
  • Organizer: KAUST-UCSB-NSF Workshop on Solid-State Lighting
  • Place of Presentation: Thwal(サウジアラビア)(招待講演)
  • Year and Date: 2012-02-14
• [Presentation] Reduction of Threading Dislocation Density by Regrowth on In-Polar InN (2012)
  • Author(s): T.Araki, T.Sakamoto, A.Miki, N.Uematsu, Y.Takamatsu, T.Yamaguchi, Y.Eoon, Y.Nanishi
  • Organizer: SPIE Photonics West 2012
  • Place of Presentation: サンフランシスコ(アメリカ)
  • Year and Date: 2012-01-23
• [Presentation] InNおよびInGaN成長の最近の進展-DERI法の結果が示唆すること- (2012)
  • Author(s): 名西〓之、山口智広、荒木努
  • Organizer: 東北大学多元物質科学研究所窒化物ナノ・エレクトロニクス材料研究センター講演会
  • Place of Presentation: 東北大学(宮城県)
  • Year and Date: 2012-01-12
• [Presentation] Application of DERI Method to InGaN Growth and Mg Doping (2011)
  • Author(s): Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, E.Yoon
  • Organizer: Advanced Workshop on 'Frontiers in Electronics' (WOFE 2011)
  • Place of Presentation: San Juan(プエルトリコ)(招待講演)
  • Year and Date: 2011-12-21
• [Presentation] InNおよびGaN成長における原子脱離過程その場観察 (2011)
  • Author(s): 山口智広、荒木努、本田徹、名西〓之
  • Organizer: 応用物理学会結晶工学分科会主催2011年年末講演会
  • Place of Presentation: 学習院創立百周年記念会館(東京都)
  • Year and Date: 2011-12-15
• [Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys II -P-Type Doping, Nano-Structure and New Challenges- (2011)
  • Author(s): Y.Nanishi, E.Yoon
  • Organizer: The 2nd WCU (World Class University) Symposium
  • Place of Presentation: Gwangju(韓国)(招待講演)
  • Year and Date: 2011-11-11
• [Presentation] ECR-MBE法を用いたA面InNナノ構造の配列制御選択成長 (2011)
  • Author(s): 荒木努、山下修平、山口智広、名西〓之
  • Organizer: 第41回結晶成長国内会議(NCCG-41)
  • Place of Presentation: つくば国際会議場(茨城県)(招待講演)
  • Year and Date: 2011-11-04
• [Presentation] DERI法を用いたA面GaNテンプレート上A面InNの作成 (2011)
  • Author(s): 油谷匡胤、山口智広、荒木努、名西〓之
  • Organizer: 平成23年電気関係学会関西支部連合大会
  • Place of Presentation: 兵庫県立大学書写キャンパス(兵庫県)
  • Year and Date: 2011-10-30
• [Presentation] In極性InN上への再成長による貫通転位密度低減 (2011)
  • Author(s): 荒木努、坂本務、三木彰、上松尚、高松祐基、山口智広、名西やすし
  • Organizer: 2011年秋季第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学小白川キャンパス(山形県)
  • Year and Date: 2011-08-30
• [Presentation] Growths of InN/InGaN Periodic Structure and Thick InGaN Film Using Droplet Elimination Process by Radical-Beam Irradiation (2011)
  • Author(s): T.Yamaguchi, T.Araki, T.Honda, E.Yoon, Y.Nanishi
  • Organizer: 28th North American Molecular Beam Epitaxy Conference (NAMBE2011)
  • Place of Presentation: サンディエゴ(アメリカ)
  • Year and Date: 2011-08-16
• [Presentation] Strong Luminescence from Self-Assembled InN Nanocolumns with Few Dislocations Grown by Molecular Beam Epitaxy (2011)
  • Author(s): K.Wang, T.Araki, T.Yamaguchi, E.Yoon, Y.Nanishi
  • Organizer: The 9th International Conference on Nitride Semiconductors (ICNS-9) 2011
  • Place of Presentation: グラスゴー(スコットランド)
  • Year and Date: 2011-07-15
• [Presentation] Hydrogen in InN with Polar, Nonpolar and Semipolar Surface Orientations (2011)
  • Author(s): V.Darakchieva, K.Lorenz, S.Ruffenach, M.-Y.Xie, E.Alves, M.Moret, O.Briot, W.J.Schaff, C.L.Hsiao, L.C.Chen, L.W.Tu, T.Yamasuchi, Y.Nanishi
  • Organizer: The 9th International Conference on Nitride Semiconductors (ICNS-9) 2011
  • Place of Presentation: グラスゴー(スコットランド)
  • Year and Date: 2011-07-14
• [Presentation] Fabrication of Nano-structure of A-plane InN on Patterned A-plane GaN Template by ECR-MBE (2011)
  • Author(s): T.Araki, S.Yamashita, T.Yamaguchi, E.Yoon, Y.Nanishi
  • Organizer: The 9th International Conference on Nitride Semiconductors (ICNS-9) 2011
  • Place of Presentation: グラスゴー(スコットランド)
  • Year and Date: 2011-07-14
• [Presentation] PN Junction Measurement in InN (2011)
  • Author(s): E.A.Llado, M.Mayer, N.Mayer, T.Yamaguchi, K.Wang, E.Haller, Y.Nanishi, J.Ager
  • Organizer: The 9th International Conference on Nitride Semiconductors (ICNS-9) 2011
  • Place of Presentation: グラスゴー(スコットランド)
  • Year and Date: 2011-07-14
• [Presentation] Anharmonic Phonon Decay in InN Thin Films (2011)
  • Author(s): N.Domenech-Amador, R.Cusco, L.Artus, T.Yamaguchi, Y.Nanishi
  • Organizer: The 9th International Conference on Nitride Semiconductors (ICNS-9) 2011
  • Place of Presentation: グラスゴー(スコットランド)
  • Year and Date: 2011-07-13
• [Presentation] Investigation of InN Nanocolumns Grown on GaN Templates by Molecular Beam Epitaxy (2011)
  • Author(s): K.Wang, T.Yamaguchi, T.Araki, E.Yoon, Y.Nanishi
  • Organizer: The 9th International Conference on Nitride Semiconductors (ICNS-9) 2011
  • Place of Presentation: グラスゴー(スコットランド)
  • Year and Date: 2011-07-13
• [Presentation] Proposal of Thick InGaN Film Growth Using Advanced Droplet Elimination Process by Radical-Beam Irradiation (2011)
  • Author(s): T.Yamaguchi, N.Uematsu, R.Iwamoto, T.Araki, E.Yoon, Y.Nanishi
  • Organizer: The 9th International Conference on Nitride Semiconductors (ICNS-9) 2011
  • Place of Presentation: グラスゴー(スコットランド)
  • Year and Date: 2011-07-13
• [Presentation] Evaluation of P-type InN Using Temperature Dependence of I-V Characteristics (2011)
  • Author(s): H.Sakurai, J.Kikawa, R.Iwamoto, K.Wang, T.Yamaguchi, T.Araki, Y.Nanishi
  • Organizer: The 9th International Conference on Nitride Semiconductors (ICNS-9) 2011
  • Place of Presentation: グラスゴー(スコットランド)
  • Year and Date: 2011-07-13
• [Presentation] In Situ Monitoring Techniques by DERI Method (2011)
  • Author(s): T.Yamaguchi, K.Wang, T.Araki, T.Honda, E.Yoon, Y.Nanishi
  • Organizer: 30th Electronic Materials Symposium (EMS30)
  • Place of Presentation: ラフォーレ琵琶湖(滋賀県)
  • Year and Date: 2011-07-01
• [Presentation] Temperature Dependence of I-V Characteristics of p-type InN Grown by RF-MBE (2011)
  • Author(s): H.Sakurai, J.Kikawa, R.Iwamoto, K.Wang, T.Yamaguchi, T.Araki, Y.Nanishi
  • Organizer: 30th Electronic Materials Symposium (EMS30)
  • Place of Presentation: ラフォーレ琵琶湖(滋賀県)
  • Year and Date: 2011-07-01
• [Presentation] Study on DERI Growth of InN-Role of Indium Droplet- (2011)
  • Author(s): T.Katsuki, T.Yamaguchi, T.Araki, Y.Nanishi
  • Organizer: 30th Electronic Materials Symposium (EMS30)
  • Place of Presentation: ラフォーレ琵琶湖(滋賀県)
  • Year and Date: 2011-07-01
• [Presentation] Thick InGaN Growth Using DERI Method (2011)
  • Author(s): N.Uematsu, T.Yamaguchi, R.Iwamoto, T.Sakamoto, T.Fujishima, T.Araki, Y.Nanishi
  • Organizer: 30th Electronic Materials Symposium (EMS30)
  • Place of Presentation: ラフォーレ琵琶湖(滋賀県)
  • Year and Date: 2011-07-01
• [Presentation] Recent Progress of DERI Process for Growth of InN and Related Alloys (2011)
  • Author(s): Y.Nanishi, T.Yamaguchi, T.Araki, E.Yoon
  • Organizer: 40th "Jaszowiec" International School and Conference on the Physics of Semiconductors
  • Place of Presentation: Krynica-Zdroj(ポーランド)(招待講演)
  • Year and Date: 2011-06-29
• [Presentation] 窒化物光半導体デバイスの新しい可能性を求めて-InNと関連混晶の新しい成長技術の開発と現状- (2011)
  • Author(s): 名西〓之、山口智広、荒木努
  • Organizer: LED総合フォーラム2011in徳島
  • Place of Presentation: 徳島グランヴィリオホテル(徳島県)(招待講演)
  • Year and Date: 2011-06-25
• [Presentation] Molecular Beam Epitaxial Growth and Characterization of InN Nanocolumns on GaN (2011)
  • Author(s): K.Wang, T.Yamaguchi, T.Araki, E.Yoon, Y.Nanishi
  • Organizer: Electronic Materials Conference 2011 (EMC2011)
  • Place of Presentation: サンタバーバラ(アメリカ)
  • Year and Date: 2011-06-24
• [Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Those Nano- Structures (2011)
  • Author(s): Y.Nanishi
  • Organizer: The 1st WCU Symposium (World Class University) on Hybrid Materials
  • Place of Presentation: Gangwon(韓国)(招待講演)
  • Year and Date: 2011-06-20
• [Presentation] Growth of InN Nanocolumns on GaN Templates and Sapphire by RF-MBE (2011)
  • Author(s): K.Wang, T.Yamaguchi, T.Araki, E.Yoon, Y.Nanishi
  • Organizer: 5th Asia-Pacific Workshop on Widegap Semiconductors
  • Place of Presentation: 鳥羽国際ホテル(三重県)
  • Year and Date: 2011-05-25
• [Presentation] Recent Progress of InN and Related Alloys Grown by DERI Method (2011)
  • Author(s): Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, E.Yoon
  • Organizer: 2011 E-MRS Spring Meeting
  • Place of Presentation: ニース(フランス)(招待講演)
  • Year and Date: 2011-05-11
• [Presentation] Contactless Eectroreflectance Spectroscopy of Electron Gas in InN Layers and AlGaN/GaN Transistor Heterostructures (2011)
  • Author(s): R.Kudrawiec, M.Gladysiewicz, J.Misiewicz, T.Suski, D.Muto, Y.Nanishi
  • Organizer: 2011 E-MRS Spring Meeting
  • Place of Presentation: ニース(フランス)
  • Year and Date: 2011-05-11
• [Presentation] Unintentional Incorporation of Hydrogen in InN with Different Surface Orientations (2011)
  • Author(s): V.Darakchieva, K.Lorenz, M.-Y.Xie, N.P.Barradas, E.Alves, W.J.Schaff, C.L.Hsiao, L.C.Chen, L.W.Tu, T.Yamaguchi, Y.Nanishi
  • Organizer: 2011 E-MRS Spring Meeting
  • Place of Presentation: ニース(フランス)
  • Year and Date: 2011-05-10
• [Presentation] Photoreflectance and Photoluminescence of InN Layers with Low Electron Concentration (2011)
  • Author(s): R.Kudrawiec, J.Misiewicz, T.Suski, D.Muto, Y.Nanishi
  • Organizer: 2011 E-MRS Spring Meeting
  • Place of Presentation: ニース(フランス)
  • Year and Date: 2011-05-10
• [Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Those Nano-structures (2011)
  • Author(s): Y. Nanishi, T. Yamaguchi, K. Wangand T. Araki
  • Organizer: Workshop on Frontier Photonic and Electronic Materials and Devices 2011 German - Japanese - Spanish Joint Workshop
  • Place of Presentation: グラナダ(スペイン)
  • Year and Date: 2011-03-17
• [Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Those Nano-structures (2011)
  • Author(s): Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki
  • Organizer: Workshop on Frontier Photonic and Electronic Materials and Devices 2011 German-Japanese-Spanish Joint Workshop
  • Place of Presentation: Granada Spain
  • Year and Date: 2011-03-17
• [Presentation] TEM Study on Microstructure of Mg-doped InN Grown by RF-MBE Using DERI Method (2011)
  • Author(s): T.Araki, T.Sakamoto, R.Iwamoto, T.Yamaguchi, E.Yoon, Y.Nanishi
  • Organizer: 3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2011)
  • Place of Presentation: Nagoya Institute of Technology, Aichi Japan
  • Year and Date: 2011-03-09
• [Presentation] Development of Radical Beam Monitoring Techniques in RF-MBE Growth of InN (2011)
  • Author(s): T.Yamaguchi, T.Fujishima, T.Araki, E.Yoon, Y.Nanishi
  • Organizer: 3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2011)
  • Place of Presentation: Nagoya Institute of Technology, Aichi Japan
  • Year and Date: 2011-03-07
• [Presentation] Growth and Fabrication of InN-based III-nitride Structure Using Droplet Elimination Process by Radical Beam Irradiation (2011)
  • Author(s): T. Yamaguchi, Y. Nanishi
  • Organizer: SPIE Photonic West 2011
  • Place of Presentation: サンフランシスコ(アメリカ)
  • Year and Date: 2011-01-24
• [Presentation] Growth and Fabrication of InN-based III-nitride Structure Using Droplet Elimination Process by Radical Beam Irradiation (2011)
  • Author(s): T.Yamaguchi, Y.Nanishi
  • Organizer: SPIE Photonic West 2011
  • Place of Presentation: San Francisco, CA USA
  • Year and Date: 2011-01-24
• [Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Challenges for Nano-Photonics (2010)
  • Author(s): Y.Nanishi
  • Organizer: 3rd GIST Information and Mechatronics Week 2010
  • Place of Presentation: Seoul Korea
  • Year and Date: 2010-12-02
• [Presentation] 窒化物光半導体未踏領域への挑戦-InNと関連混晶の新しい成長技術と評価 (2010)
  • Author(s): 名西〓之、山口智広、王科、荒木努、Euijoon Yoon
  • Organizer: 応用物理学会九州支部学術講演会
  • Place of Presentation: 九州大学伊都キャンパス福岡県福岡市
  • Year and Date: 2010-11-27
• [Presentation] MBE法を用いたA面GaNテンプレート上A面InN選択成長 (2010)
  • Author(s): 山下修平、山口智広、荒木努、名西〓之
  • Organizer: 平成22年電気関係学会関西連合大会
  • Place of Presentation: 立命館大学キャンパス滋賀県草津市
  • Year and Date: 2010-11-14
• [Presentation] RF-MBE法を用いたr面サファイア基板上A面InN結晶高品質化に関する検討 (2010)
  • Author(s): 荒木努、川島圭介、山日智広、名西〓之
  • Organizer: 2010年度電子情報通信学会レーザ・量子エレクトロニクス研究会
  • Place of Presentation: 大阪大学中之島センター大阪府大阪市
  • Year and Date: 2010-11-11
• [Presentation] Recent Research Activities in Japan toward Nitride Semiconductor Opto-electronics Frontier (2010)
  • Author(s): Y.Nanishi
  • Organizer: Korea Optoelectronic Engineering Society
  • Place of Presentation: Seoul Korea
  • Year and Date: 2010-10-08
• [Presentation] Droplet elimination process by radical beam irradiation for the growth of InN-based III-nitrides and its application to device structure (2010)
  • Author(s): T.Yamaguchi, Y.Nanishi
  • Organizer: 2010 International Conference on Solid State Devices and Materials
  • Place of Presentation: Tokyo Univ Tokyo Japan
  • Year and Date: 2010-09-24
• [Presentation] Surface Kinetics of Indium Adlayers and Droplets and Their Roles in InN Growth by Molecular Beam Epitaxy (2010)
  • Author(s): K.Wang, T.Yamaguchi, T.Araki, Y.Nanishi
  • Organizer: The International Workshop on Nitride semiconductors (IWN2010)
  • Place of Presentation: Tampa, Florida USA
  • Year and Date: 2010-09-23
• [Presentation] Raman scattering study of the temperature dependence of phonons in InN (2010)
  • Author(s): N.Domenech-Amador, L.Artus, R.Cusco, J.Ibanez, T.Yamaguchi, Y.Nanishi
  • Organizer: The International Workshop on Nitride semiconductors (IWN2010)
  • Place of Presentation: Tampa, Florida USA
  • Year and Date: 2010-09-22
• [Presentation] Evidence of Rectification in InN pn Junctions (2010)
  • Author(s): N.Miller, J.W.Ager III, E.E.Haller, W.Walukiewicz, Ke Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi
  • Organizer: The International Workshop on Nitride semiconductors (IWN2010)
  • Place of Presentation: Tampa, Florida USA
  • Year and Date: 2010-09-22
• [Presentation] Free Hole Concentration and Mobility in InN : Mg (2010)
  • Author(s): N.Miller, J.W.Ager III, E.E.Haller, W_ Walukiewicz, Ke Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi
  • Organizer: The International Workshop on Nitride semiconductors (IWN2010)
  • Place of Presentation: Tampa, Florida USA
  • Year and Date: 2010-09-22
• [Presentation] Unintentional incorporation of hydrogen in InN : diffusion kinetics and effect of surface orientation (2010)
  • Author(s): V.Darakchieva, K.Lorenz, N.P Barradas, E.Alves, L.Artus, D.Rogala, H.-W.Becker.C.L.Hsiao, L.C.Chen, L.W.To, T.Yamaguchi, Y.Nanishi
  • Organizer: The International Workshop on Nitride semiconductors (IWN2010)
  • Place of Presentation: Tampa, Florida USA
  • Year and Date: 2010-09-22
• [Presentation] Wet Etching Process for InN Device Fabrication (2010)
  • Author(s): A.Miki, K.Morimoto, N.Maeda, T Yamaguchi, T.Araki, Y.Nanishi
  • Organizer: The International Workshop on Nitride semiconductors (IWN2010)
  • Place of Presentation: Tampa, Florida USA
  • Year and Date: 2010-09-22
• [Presentation] Dry etching of In-and N-polar InN using inductively-coupled plasma (2010)
  • Author(s): T.Fujishima, S.Takahashi, K.Morimoto, R.Iwamoto, N.Uematsu, M.Yutani, T.Yamaguchi, T.Araki, Y.Nanishi
  • Organizer: The International Workshop on Nitride semiconductors (IWN2010)
  • Place of Presentation: Tampa, Florida USA
  • Year and Date: 2010-09-22
• [Presentation] Mg doped InN and search for holes (2010)
  • Author(s): K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, J W Ager, K.M.Yu, W.Walukiewicz
  • Organizer: The International Workshop on Nitride semiconductors (IWN2010)
  • Place of Presentation: Tampa, Florida USA
  • Year and Date: 2010-09-22
• [Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Challenges for Device Applications (2010)
  • Author(s): Y. Nanishi, T. Yamaguchi, K. Wang, T. Araki, M. Kaneko, E. Yoon, N. Miller, J. W. Ager III, K. M. Yu, W. Walukiewicz
  • Organizer: The International Workshop on Nitride semiconductors (IWN2010)
  • Place of Presentation: タンパ(アメリカ)
  • Year and Date: 2010-09-21
• [Presentation] Recent Progress in Growth and Characterization of InN and Related Aloys and Challenges for Device Applications (2010)
  • Author(s): Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, M.Kaneko, E.Yoon, N.Miller, J.W.AgerIII, K.M.Yu, W.Walukiewicz
  • Organizer: The International Workshop on Nitride semiconductors (IWN2010)
  • Place of Presentation: Tampa, Florida USA
  • Year and Date: 2010-09-21
• [Presentation] TEMを用いたDERI法ドープInNの極微構造評価 (2010)
  • Author(s): 坂本努、山口智広、岩本亮輔、荒木努、名西〓之
  • Organizer: 2010年(平成22年)秋季第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学文教キャンパス長崎県長崎市
  • Year and Date: 2010-09-14
• [Presentation] DERI法を用いたInGaN成長と組成制御への試み (2010)
  • Author(s): 岩本亮輔、山口智広、上松尚、坂本努、藤嶌辰也、荒木努、名西〓之
  • Organizer: 2010年(平成22年)秋季第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学文教キャンパス長崎県長崎市
  • Year and Date: 2010-09-14
• [Presentation] InNデバイス作製プロセスへのウエットエッチングの適用 (2010)
  • Author(s): 三木彰、森本健太、前田就彦、山口智広、荒木努、名西〓之
  • Organizer: 2010年(平成22年)秋季第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学文教キャンパス長崎県長崎市
  • Year and Date: 2010-09-14
• [Presentation] DERI法InGaN成長を用いた厚膜化への試み (2010)
  • Author(s): 上松尚、山口智広、岩本亮輔、坂本努、藤嶌辰也、荒木努、名西〓之
  • Organizer: 2010年(平成22年)秋季第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学文教キャンパス長崎県長崎市
  • Year and Date: 2010-09-14
• [Presentation] Growth and Characterization of InN-Related Materials (2010)
  • Author(s): Y.Nanishi
  • Organizer: Rainbow Second Training Workshop
  • Place of Presentation: Madrid Spain
  • Year and Date: 2010-08-31
• [Presentation] InGaN Growth Using Droplet Elimination by Radical-beam Irradiation Method (2010)
  • Author(s): T.Yamaguchi, K.Wang, T.Araki, E.Yoon, Y.Nanishi
  • Organizer: 16th International Conference on Molecular Beam Epitaxy (MBE 2010)
  • Place of Presentation: Berlin Germany
  • Year and Date: 2010-08-26
• [Presentation] Potential, Present Status and Future Challenges of InN and Related Alloys for Device Applications (2010)
  • Author(s): Y.Nanishi, T.Yamaguchi, E.Yoon
  • Organizer: The second LED domestic conference
  • Place of Presentation: Seoul Korea
  • Year and Date: 2010-08-25
• [Presentation] Effect of low-temperature InN buffer on A-plane InN growth on nitridated r-plane sapphire by RF-MBE (2010)
  • Author(s): T.Araki, K.Kawashima, T.Yamaguchi, Y.Nanishi
  • Organizer: The 16th International Conference on Crystal Growth (ICCG16)
  • Place of Presentation: Beijing China
  • Year and Date: 2010-08-09
• [Presentation] High-Pressure Optical Absorption and Raman Scattering in InN Thin Films Grown by Molecular Beam Epitaxy (2010)
  • Author(s): F.J.Manjon, J.Ibanez, A.Segura, R.Cusco, L.Artus, T.Yamaguchi, Y.Nanishi
  • Organizer: 48th European High Pressure Research Group Conference (EHPRG)
  • Place of Presentation: Uppsala Sweden
  • Year and Date: 2010-07-26
• [Presentation] Forty years research toward compound semiconductor frontiers-Tributary road from GaAs to InN through GaN- (2010)
  • Author(s): Y.Nanishi
  • Organizer: 29th Electronic Materials Symposium (EMS29)
  • Place of Presentation: ラフォーレ修善寺静岡県伊豆市
  • Year and Date: 2010-07-14
• [Presentation] Wet Etching by KOH for InN Device Fabrication (2010)
  • Author(s): A.Miki, K.Morimoto, N.Maeda, T.Yamaguchi, T.Araki, Y.Nanishi
  • Organizer: 29th Electronic Materials Symposium (EM529)
  • Place of Presentation: ラフォーレ修善寺静岡県伊豆市
  • Year and Date: 2010-07-14
• [Presentation] Various Application of DERI (Droplet Elimination by Radical-beam Irradiation) Method in Growth of RF-MBE (2010)
  • Author(s): T.Yamaguchi, H.Umeda, T Sakamoto, T.Araki, E.Yoon, Y.Nanishi
  • Organizer: 29th Electronic Materials Symposium (EMS29)
  • Place of Presentation: ラフォーレ修善寺静岡県伊豆市
  • Year and Date: 2010-07-14
• [Presentation] Characterization of Contact Resistance of Ti/Al/Ti/Au Ohmic Metal on N-polar and In-polar InN Films mown by RF-MBE (2010)
  • Author(s): K.Morimoto, S.Kikuchi, N.Maeda, T.Yamaguchi, Y.Nanishi
  • Organizer: 29th Electronic Materials Symposium (EMS29)
  • Place of Presentation: ラフォーレ修善寺静岡県伊豆市
  • Year and Date: 2010-07-14
• [Presentation] Growth, Monitoring, P-type doping and MQW Structure Fabrication by DERI Method (2010)
  • Author(s): Y.Nanishi
  • Organizer: The international workshop on modern and advanced phenomena in wurtzite semiconductors
  • Place of Presentation: Montpellier France
  • Year and Date: 2010-07-09
• [Presentation] Evidence of Free Holes in Mg Doped InN (2010)
  • Author(s): K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, J.W.Ager, K.M.Yu, W.Walukiewicz
  • Organizer: International Symposium on Growth of III-Nitrides 2010
  • Place of Presentation: Montpellier France
  • Year and Date: 2010-07-06
• [Presentation] Investigation on InN mole fraction fluctuation in InGaN films grown by RF-MBE (2010)
  • Author(s): T.Kimura, E.Fukumoto, T.Yamaguchi, K.Wang, M.Kaneko, T.Araki, E.Yoon, Y.Nanishi
  • Organizer: International Symposium on Growth of III-Nitrides 2010
  • Place of Presentation: Montpellier France
  • Year and Date: 2010-07-06
• [Presentation] Electronic Materials Conference 2010 (EMC2010) (2010)
  • Author(s): K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, W.Walukiewicz
  • Organizer: Electronic Materials Conference 2010 (EMC2010)
  • Place of Presentation: Notre Dame, Indiana, USA
  • Year and Date: 2010-06-25
• [Presentation] Hydrogen in InN : Ubiquitous Phenomena in Molecular Beam Epitaxy Grown Material (2010)
  • Author(s): V.Darakchieva, K.Lorenz, N.P.Barradas, E.Alves, M.-Y.Xie, B.Monemar, M.Schubert, W.J.Schaff, C.L.Hsiao, L.C.Chen, L.W.To, T.Yamaguchi, Y.Nanishi
  • Organizer: CIMTEC2010 (5th Forum on New Materials)
  • Place of Presentation: Montecatini Terme, Tuscany Italy
  • Year and Date: 2010-06-16
• [Presentation] High-Pressure Optical Absorption and Raman Scattering in InN Thin Films Grown by Molecular Beam Epitaxy (2010)
  • Author(s): J.Ibanez, A.Segura, F.J.Manjon, R.Cusco, L.Artus, T.Yamaguchi, Y.Nanishi
  • Organizer: 2010 E-MRS Spring Meeting
  • Place of Presentation: Strasbourg France
  • Year and Date: 2010-06-10
• [Presentation] RF-MBE Growth of InN/InGaN MQW Structures by DERI and Their Characterization (2010)
  • Author(s): T.Araki, H.Umeda, T.Yamaguchi, T.Sakamoto, E.Yoon, Y.Nanishi
  • Organizer: 22nd International Conference on Indium Phosphide and Related Materials(IPRM2010)
  • Place of Presentation: Takamatsu symbol tower, Kagawa Japan
  • Year and Date: 2010-06-01
• [Presentation] Free-Charge Carrier Properties and Doping Mechanisms of Thin Films of InN and Related Alloys (2010)
  • Author(s): V. Darakchieva, M.Schubert, K.Lorenz, N.P.Barradas, E.Alves, T.Hofmann, B.Monemar, W.J.Schaff, C.L.Hsiao, L.C.Chen, L.W.To, T.Yamaguchi, Y.Nanishi
  • Organizer: 5th International Conference on Spectroscopic Ellipsometry (ICSE-V)
  • Place of Presentation: Albany, New York USA
  • Year and Date: 2010-05-27
• [Presentation] Growth, Monitoring and InN/InGaN MQW Structure Fabrication by DERI Method (2010)
  • Author(s): Y.Nanishi, T.Yamaguchi
  • Organizer: IX International Conference of Polish Society for Crystal Growth
  • Place of Presentation: Gdansk-Sobieszewo Poland
  • Year and Date: 2010-05-25
• [Presentation] Undoped and Mg-doped InN Grown Using Droplet Elimination by Radical-beam Irradiation Method (2010)
  • Author(s): T.Yamaguchi, K.Wang, R.Iwamoto, N.Miller, M.Mayer, J.W.Ager III, K.M.Yu, W.Walukiewicz, T.Araki, Y.Nanishi
  • Organizer: The 8th International Symposium on Semiconduct or Light Emitting Devices (ISSLED2010)
  • Place of Presentation: Beijing, China
  • Year and Date: 2010-05-18
• [Presentation] DERI法のRHEED強度その場観察手法を用いたラジカルセル診断 (2010)
  • Author(s): 勝木拓郎、福本英太、山口智広、荒木努、名西〓之
  • Organizer: 第2回窒化物半導体結晶成長講演会
  • Place of Presentation: 三重大学三重県三重市
  • Year and Date: 2010-05-15
• [Presentation] DERI法を用いたIn系窒化物半導体の結晶成長とデバイス構造作製への応用 (2010)
  • Author(s): 山口智広、荒木努、名西〓之
  • Organizer: 第2回窒化物半導体結晶成長講演会
  • Place of Presentation: 三重大学三重県三重市
  • Year and Date: 2010-05-14
• [Presentation] Japan-Korea Joint Symposium (2010)
  • Author(s): Y.Nanishi
  • Organizer: Japan-Korea Joint Symposium
  • Place of Presentation: Daejeon Korea
  • Year and Date: 2010-04-21
• [Presentation] 窒化物光半導体フロンティア領域開拓の現状 (2010)
  • Author(s): 名西〓之
  • Organizer: LED総合フォーラム
  • Place of Presentation: 阿波銀ホール徳島県徳島市
  • Year and Date: 2010-04-17
• [Presentation] Optical Hall Effect in InN : Bulk Doping Mechanism and Surface Electron Accumulation Properties (2010)
  • Author(s): V.Darakchieva, M.Schubert, T.Hofmann, Monemar, W.J.Schaff, C.L.Hsiao, L.C.Chen, L.W Tu, T.Yamaguchi, Y.Nanishi
  • Organizer: PLCN10
  • Place of Presentation: Cuernavaca Mexico
  • Year and Date: 2010-04-12
• [Presentation] N極性及びIn極性のInN-MIS構造の作製と評価 (2010)
  • Author(s): 森本健大、三木彰、山口智弘、前田就彦、荒木努、名西〓之
  • Organizer: 2011年春季第58回応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学神奈川県厚木市
  • Year and Date: 2010-03-24
• [Presentation] 電流・電圧特性の温度依存性評価によるp型InNの検証 (2010)
  • Author(s): 櫻井秀昭、井脇明日香、岩本亮輔、山口智弘、城川潤二郎、荒木努、名西〓之
  • Organizer: 2011年春季第58回応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学神奈川県厚本市
  • Year and Date: 2010-03-24
• [Presentation] Adsorption and Desorption of Indium Adlayer on GaN Surface (2010)
  • Author(s): 王科、山口智広、荒木努、名西〓之
  • Organizer: 2010年春季 第57回 応用物理学関係連合講演会
  • Place of Presentation: 東海大学(平塚市)
  • Year and Date: 2010-03-17
• [Presentation] In組織揺らぎのメカニズム解明に向けたRF-MBE成長InGaNのCL測定評価 (2010)
  • Author(s): 木村拓也、福本英太、山口智広、王科、金子昌充、武田彰史、荒木努、名西〓之
  • Organizer: 2010年春季 第57回 応用物理学関係連合講演会
  • Place of Presentation: 東海大学(平塚市)
  • Year and Date: 2010-03-17
• [Presentation] A面InN成長のための低温InNバッファ層最適成長条件の検討 (2010)
  • Author(s): 荒木努、川島圭介、山口智広、名西〓之
  • Organizer: 2010年春季 第57回 応用物理学関係連合講演会
  • Place of Presentation: 東海大学(平塚市)
  • Year and Date: 2010-03-17
• [Presentation] LiA1O_2(100)基板上M面InN低温バッファ層利用に向けたM面GaN下地層の有効性 (2010)
  • Author(s): 香川和明、山口智広、荒木努、名西〓之
  • Organizer: 2010年春季 第57回 応用物理学関係連合講演会
  • Place of Presentation: 東海大学(平塚市)
  • Year and Date: 2010-03-17
• [Presentation] C面、A面、M面InNの表面化学状態の解析 (2010)
  • Author(s): 高木俊樹、金子昌充、山口智広、荒木努、名西〓之
  • Organizer: 2010年春季 第57回 応用物理学関係連合講演会
  • Place of Presentation: 東海大学(平塚市)
  • Year and Date: 2010-03-17
• [Presentation] 硬X線光電子分光によるInNバルク評価 (2010)
  • Author(s): 金子昌充、山口智広、井村将隆、山下良之、名西〓之
  • Organizer: 2010年春季 第57回 応用物理学関係連合講演会
  • Place of Presentation: 東海大学(平塚市)
  • Year and Date: 2010-03-17
• [Presentation] Fabrication of InN/InGaN Multi Quantum Well Structures by Droplet Elimination by Radical-Beam Irradiation (2010)
  • Author(s): H.Umeda, T.Yamaguchi, T.Sakamoto, T.Araki, E.Yoon, Y.Nanishi
  • Organizer: ISPlasma2010
  • Place of Presentation: 名古屋(日本)
  • Year and Date: 2010-03-09
• [Presentation] In Situ Monitoring of InN Grown by RF-MBE (2010)
  • Author(s): K.Wang, T.Yamaguchi, T.Araki, E..Yoon, Y.Nanishi
  • Organizer: ISPlasma2010
  • Place of Presentation: 名古屋(日本)
  • Year and Date: 2010-03-09
• [Presentation] New Reproducible MBE Growth method for High Quality InN and InGaN (2009)
  • Author(s): Y.Nanishi, T.Yamaguchi
  • Organizer: Advanced Workshop on 'Frontiers in Electronics'(WOFE09)
  • Place of Presentation: リンコン(プエルトリコ)
  • Year and Date: 2009-12-14
• [Presentation] Raman Scattering by LO-Phonon-Plasmon Coupled Modes in InN Epilayers : Dependence on the Excitation Laser Intensity and Wavelength (2009)
  • Author(s): R.Cusco, J.lbanez, E.Alarcon-Llado, T.Yamaguchi, Y.Nanishi, L.Artus
  • Organizer: 2009 MRS Fall Meeting
  • Place of Presentation: ボストン(アメリカ)
  • Year and Date: 2009-12-01
• [Presentation] RF-MBE法を用いた高品質InN結晶成長-配列制御InNナノコラム成長について- (2009)
  • Author(s): 荒木努、山口智広、金子昌充、名西〓之
  • Organizer: 2009年度 電子情報通信学会レーザ・量子エレクトロニクス研究会
  • Place of Presentation: 徳島大学(徳島市)
  • Year and Date: 2009-11-19
• [Presentation] RF-MBE法における新規高品質InN結晶成長手法の提案とInGaN結晶成長への応用 (2009)
  • Author(s): 山口智広、名西やすし
  • Organizer: 2009年度 電子情報通信学会レーザ・量子エレクトロニクス研究会
  • Place of Presentation: 徳島大学(徳島市)
  • Year and Date: 2009-11-19
• [Presentation] InNナノウォールの作製と評価 (2009)
  • Author(s): 片岡佳大、岩本亮輔、山口智広、三宅秀人、平松和政、荒木努、名西〓之
  • Organizer: 第39回結晶成長国内会議(NCCG-39)
  • Place of Presentation: 名古屋大学(名古屋市)
  • Year and Date: 2009-11-14
• [Presentation] DERI法を用いたRF-MBE InN結晶成長と各種その場観察評価 (2009)
  • Author(s): 山口智広、荒木努、王科、岩本亮輔、名西やすし
  • Organizer: 第39回結晶成長国内会議(NCCG-39)
  • Place of Presentation: 名古屋大学(名古屋市)
  • Year and Date: 2009-11-14
• [Presentation] DERI法を用いたInN/InGaN量子井戸構造の作製 (2009)
  • Author(s): 梅田英知、山口智広、荒木努、名西〓之
  • Organizer: 第39回結晶成長国内会議(NCCG-39)
  • Place of Presentation: 名古屋大学(名古屋市)
  • Year and Date: 2009-11-13
• [Presentation] InNへのMgドーピングにおける成長条件依存性 (2009)
  • Author(s): 岩本亮輔、山口智広、荒木努、名西〓之
  • Organizer: 第39回結晶成長国内会議(NCCG-39)
  • Place of Presentation: 名古屋大学(名古屋市)
  • Year and Date: 2009-11-13
• [Presentation] 窒化インジウム半導体の進展 (2009)
  • Author(s): 名西〓之
  • Organizer: 第25回京都賞記念ワークショップ先端技術部門
  • Place of Presentation: 国立京都国際会館(京都市)
  • Year and Date: 2009-11-12
• [Presentation] RF-MBE法によるr面(10-12)Sapphire基板上InNの結晶成長 (2009)
  • Author(s): 川島圭介、山口智広、荒木努、名西〓之
  • Organizer: 平成21年電気関係学会関西支部連合大会
  • Place of Presentation: 大阪大学(吹田市)
  • Year and Date: 2009-11-07
• [Presentation] RF-MBE法を用いたLiA1O_2(100)基板上へのInNの結晶成長 (2009)
  • Author(s): 香川和明、高木悠介、山口智広、荒木努、名西〓之
  • Organizer: 平成21年電気関係学会関西支部連合大会
  • Place of Presentation: 大阪大学(吹田市)
  • Year and Date: 2009-11-07
• [Presentation] Observation of Surface Potential on Polar and Nonpolar InN by Kelvin-Probe Force Microscopy (2009)
  • Author(s): M.Kaneko, Y.Takagi, K.Kawashima, T.Yamaguchi, Y.Nanishi
  • Organizer: The 8th International Conference on Nitride Semiconductors(ICNS 2009)
  • Place of Presentation: チェジュ(韓国)
  • Year and Date: 2009-10-23
• [Presentation] Hydorogen in InN (2009)
  • Author(s): V.Darakchieva, K.Lorenz, N.P.Barradas, E.Alves, M.-Y.Xie, B.Monemar, M.Schubert, W.J.Schaff, C.L.Hsiao, L.C.Chen, L.W.Tu, Y.Nanishi
  • Organizer: The 8th International Conference on Nitride Semiconductors(ICNS 2009)
  • Place of Presentation: チェジュ(韓国)
  • Year and Date: 2009-10-23
• [Presentation] RF-MBE Growth and Characterization of M-Plane InN on LiAIO2 with C-Plane Phase Inclusion (2009)
  • Author(s): T.Araki, H.Nozawa, Y.Takagi, A.Takeda, T.Sakamoto, K.Kagawa, T.Yamaguchi, Y.Nanishi
  • Organizer: The 8th International Conference on Nitride Semiconductors(ICNS 2009)
  • Place of Presentation: チェジュ(韓国)
  • Year and Date: 2009-10-22
• [Presentation] Proposal of Droplet Elimination Process by Radical Beam Irradiation for Reproducible Growth of High-quality InN and InGaN (2009)
  • Author(s): T.Yamaguchi, A.Uedono, T.Suski, Y.Nanishi
  • Organizer: The 8th International Conference on Nitride Semiconductors(ICNS 2009)
  • Place of Presentation: チェジュ(韓国)
  • Year and Date: 2009-10-22
• [Presentation] Polarized Photoluminescence from Nonpolar InN Films (2009)
  • Author(s): K.Wang, T.Yamaguchi, K.Kawashima, Y.Takagi, T.Araki, Y.Nanishi
  • Organizer: The 8th International Conference on Nitride Semiconductors(ICNS 2009)
  • Place of Presentation: チェジュ(韓国)
  • Year and Date: 2009-10-19
• [Presentation] Photoexcited Carriers in InN Layers Observed by Raman Scattering (2009)
  • Author(s): R.Cusco.E.Alarcon-Llado, J.Ibanez, T.Yamaguchi, Y.Nanishi, L.Artus
  • Organizer: The 8th International Conference on Nitride Semiconductors(ICNS 2009)
  • Place of Presentation: チェジュ(韓国)
  • Year and Date: 2009-10-19
• [Presentation] Growth of InN and Related Alloys Using Droplet Elimination by Radical Beam Irradiation (2009)
  • Author(s): T.Yamaguchi, Y.Nanishi
  • Organizer: 2009 E-MRS Fall Meeting
  • Place of Presentation: ワルシャワ(ポーランド)
  • Year and Date: 2009-09-15
• [Presentation] Influence of Defects, Dopants and Surface Orientation on Free Carrier Properties of InN (2009)
  • Author(s): V.Darakchieva, M.Schubert, E.Alves, K.Lorenz, M.-Y.Xie, T.Hofmann, W.J.Schaff, L.C.Chen, L.W.Tu, Y.Nanishi
  • Organizer: 2009 E-MRS Fall Meeting
  • Place of Presentation: ワルシャワ(ポーランド)
  • Year and Date: 2009-09-15
• [Presentation] A1薄膜堆積によるC面InNの表面改質効果 (2009)
  • Author(s): 高木俊樹、金子昌充、山口智広、荒木努、名西〓之
  • Organizer: 2009年(平成21年)秋季第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学(富山市)
  • Year and Date: 2009-09-10
• [Presentation] 極性及び無極性InNの表面電位評価 (2009)
  • Author(s): 金子昌充、川島圭介、山口智広、名西〓之
  • Organizer: 2009年(平成21年)秋季第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学(富山市)
  • Year and Date: 2009-09-10
• [Presentation] CTLM法によるIn極性及びN極性の高品質InN薄膜へのコンタクト抵抗評価 (2009)
  • Author(s): 森本健太、菊池将悟、前田就彦、山口智広、名西〓之
  • Organizer: 2009年(平成21年)秋季第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学(富山市)
  • Year and Date: 2009-09-10
• [Presentation] DERI法により作製されたInNの光反射率その場観察 (2009)
  • Author(s): 王科、山口智広、荒木努、名西〓之
  • Organizer: 2009年(平成21年)秋季第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学(富山市)
  • Year and Date: 2009-09-10
• [Presentation] カソードルミネッセンス法によるr面サファイア基板上InN薄膜の光学的評価 (2009)
  • Author(s): 武田彰史、川島圭介、山口智広、荒木努、名西〓之
  • Organizer: 2009年(平成21年)秋季第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学(富山市)
  • Year and Date: 2009-09-10
• [Presentation] 高品質InN上薄膜AIN成長構造の作成と電気的特性の評価 (2009)
  • Author(s): 菊池将悟、山口智広、前田就彦、名西〓之
  • Organizer: 2009年(平成21年)秋季第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学(富山市)
  • Year and Date: 2009-09-10
• [Presentation] RF-MBE InN成長におけるDERI法の有用性 (2009)
  • Author(s): 山口智広、王科、荒木努、名西〓之
  • Organizer: 2009年(平成21年)秋季第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学(富山市)
  • Year and Date: 2009-09-10
• [Presentation] Proposal of New RF-MBE Method Capable for Reproducible, High-Quality InN Growth (2009)
  • Author(s): Y.Nanishi, T.Yamaguchi
  • Organizer: 17th American Conference on Crystal Growth and Epitaxy(ACCGE-17)
  • Place of Presentation: ウィスコンシン(アメリカ)
  • Year and Date: 2009-08-13
• [Presentation] Characterization of Metal Contact Resistance Using Al, Ti, and Ni on High-Quality InN Films Grown by RF-MBE (2009)
  • Author(s): S.Kikuchi, N.Maeda, T.Yamaguchi, Y.Nanishi
  • Organizer: 28th Electronic Materials Symposium(EMS28)
  • Place of Presentation: ラフォーレ琵琶湖(守山市)
  • Year and Date: 2009-07-10
• [Presentation] Plarized Photoluminescence from Polar and Nonpolar InN Films (2009)
  • Author(s): K.Wang, T.Yamaguchi, T.Araki, Y.Nanishi
  • Organizer: 28th Electronic Materials Symposium(EMS28)
  • Place of Presentation: ラフォーレ琵琶湖(守山市)
  • Year and Date: 2009-07-09
• [Presentation] Evaluation of Surface Fermi Level of MBE-Grown InN by Kelvin-Probe Force Microscopy (2009)
  • Author(s): M.Kaneko, T.Yamaguchi, Y.Nanishi
  • Organizer: 28th Electronic Materials Symposium(EMS28)
  • Place of Presentation: ラフォーレ琵琶湖(守山市)
  • Year and Date: 2009-07-09
• [Presentation] Indium Incorporation Behavior in InGaN Growth by RF-MBE (2009)
  • Author(s): T.Yamaguchi, T.Araki, Y.Nanishi
  • Organizer: 28th Electronic Materials Symposium(EMS28)
  • Place of Presentation: ラフォーレ琵琶湖(守山市)
  • Year and Date: 2009-07-08
• [Presentation] Simple and Reproducible Growth of High-Quality InN by DERI (2009)
  • Author(s): T.Yamaguchi, R.Iwamoto, N.Maeda, T.Araki, Y.Nanishi
  • Organizer: 28th Electronic Materials Symposium(EMS28)
  • Place of Presentation: ラフォーレ琵琶湖(守山市)
  • Year and Date: 2009-07-08
• [Presentation] Structural Characterization of M-Plane InN Grown on LiAIO2 Substrate with C-Plane Phase Inclusion (2009)
  • Author(s): T.Araki, H.Nozawa, Y.Takagi, A.Takeda, K.Kagawa, T.Yamaguchi, Y.Nanishi
  • Organizer: 28th Electronic Materials Symposium(EMS28)
  • Place of Presentation: ラフォーレ琵琶湖(守山市)
  • Year and Date: 2009-07-08
• [Presentation] V/III Ratiodependence on M-Plane InN Growth on LiAlO2(100) Substrates by RF-MBE (2009)
  • Author(s): K.Kagawa, Y.Takagi, T.Yamaguchi, T.Araki, Y.Nanishi
  • Organizer: 28th Electronic Materials Symposium (EMS28)
  • Place of Presentation: ラフォーレ琵琶湖(守山市)
  • Year and Date: 2009-07-08
• [Presentation] Mg Doping of In-Rich InGaN Grown by RF-MBE (2009)
  • Author(s): E.Fukumoto, T.Yamaguchi, T.Araki, Y.Nanishi
  • Organizer: 28th Electronic Materials Symposium(EMS28)
  • Place of Presentation: ラフォーレ琵琶湖(守山市)
  • Year and Date: 2009-07-08
• [Presentation] Characterization of Contact Resistance of Al, Ti, and Ni in High-Quality InN Films grown by RF-MBE (2009)
  • Author(s): S.Kikuchi, N.Maeda, T.Yamaguchi, Y.Nanishi
  • Organizer: Electronic Materials Conference 2009(EMC2009)
  • Place of Presentation: ペンシルバニア(アメリカ)
  • Year and Date: 2009-06-26
• [Presentation] Potential and Challenges of InN and Related Alloys for Advanced Electronic Devices (2009)
  • Author(s): Y.Nanishi, N.Maeda, T.Yamaguchi, M.Kaneko
  • Organizer: 67th Device Research Conference
  • Place of Presentation: ペンシルバニア(アメリカ)
  • Year and Date: 2009-06-23
• [Presentation] Proposal of New RF-MBE Growth Method for Reproducible and High-Quality InN and InGaN (2009)
  • Author(s): Y.Nanishi, T.Yamaguchi
  • Organizer: 15th Semiconducting and Insulating Materials Conference(SIMC-15)
  • Place of Presentation: ヴィリニュス(リトアニア)
  • Year and Date: 2009-06-15
• [Presentation] New MBE Growth Method for High Quality InN and Related Alloys Using in Situ Monitoring Technology (2009)
  • Author(s): T.Yamaguchi, Y.Nanishi
  • Organizer: E-MRS 2009 Spring Meeting(European Materials Research Society Spring Meeting)
  • Place of Presentation: ストラスブルグ(フランス)
  • Year and Date: 2009-06-12
• [Presentation] Raman Scattering and Phonon-Plasmon Coupled Modes in InN : a Free-Electron Density Study (2009)
  • Author(s): R.Cusco, E..Alarcon-Llado, J.Ibanez, T.Yamaguchi, Y.Nanishi, L.Artus
  • Organizer: E-MRS 2009 Spring Meeting(European Materials Research Society Spring Meeting)
  • Place of Presentation: ストラスブルグ(フランス)
  • Year and Date: 2009-06-09
• [Presentation] Structural Anisotropy and Free Electron Properties of a-Plane InN (2009)
  • Author(s): V.Darakchieva, N.Franco, M.Schubert, B.Monemar, C.-L.Hsiao, T.-W Liu, L.-C.Chen, D.Muto, Y.Nanishi
  • Organizer: E-MRS 2009 Spring Meeting(European Materials Research Society Spring Meeting)
  • Place of Presentation: ストラスブルグ(フランス)
  • Year and Date: 2009-06-09
• [Presentation] Photoluminescence and Raman Spectroscopy Study of InN Films Grown by RF-MBE (2009)
  • Author(s): K.Wang, T.Yamaguchi, A.Takeda, D.Muto, M.Kaneko, T.Araki, Y.Nanishi
  • Organizer: The 4th Asia-Pacific Workshop on Wide gap Semiconductors(APWS2009)
  • Place of Presentation: 張家界(中国)
  • Year and Date: 2009-05-26
• [Presentation] Proposal and Potential of Simple, Reproducible, Thick and High Quality InN Growth Method by MBE (2009)
  • Author(s): Y.Nanishi, T.Yamaguchi
  • Organizer: The 4th Asia-Pacific Workshop on Wide gap Semiconductors(APWS2009)
  • Place of Presentation: 張家界(中国)
  • Year and Date: 2009-05-25
• [Presentation] Recent Progress and Challenges of InN and Related Alloys for Device Applications (2009)
  • Author(s): Y.Nanishi, T.Yamaguchi
  • Organizer: 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits(WOCSDICE 2009)
  • Place of Presentation: マラガ(スペイン)
  • Year and Date: 2009-05-18
• [Presentation] MBE法によるGaN加工基板上配列制御InNナノコラムの作製 (2009)
  • Author(s): 片岡佳大、田宮秀敏、山口智広、三宅秀人、平松和政、荒木努、名西〓之
  • Organizer: 第1回窒化物半導体結晶成長講演会(Post-ISGN2)
  • Place of Presentation: 東京農工大学(小金井市)
  • Year and Date: 2009-05-16
• [Presentation] Photoluminescence and Raman Spectroscopy Study of InN Films Grown by RF-MBE (2009)
  • Author(s): K.Wang, T.Yamaguchi, A.Takeda, D.Muto, M.Kaneko, T.Araki, Y.Nanishi
  • Organizer: 第1回窒化物半導体結晶成長講演会(POSt-ISGN2)
  • Place of Presentation: 東京農工大学(小金井市)
  • Year and Date: 2009-05-15
• [Presentation] Growth of InGaN/InGaN MQW structures using DERI by RF-MBE
  • Author(s): T. Araki, N. Uematsu, K. Wang, T. Yamaguchi, E. Yoon and Y. Nanishi
  • Organizer: The Electronic Materials Conference 2012（EMC2012）
  • Place of Presentation: State College, USA
• [Presentation] Investigation of near-surface structures of polar InN films by chemical-state-discriminated hard X-ray photoelectron diffraction
  • Author(s): A. L. Yang, Y. Yamashita, M. Kobata, T. Matsushita, H. Yoshikawa, I. Pis, M. Imura, T. Yamaguchi, O. Sakata, Y. Nanishi, and K. Kobayashi
  • Organizer: The 6th International Conference on the Science and Technology for Advanced Ceramics (STAC-6)
  • Place of Presentation: メルパルク横浜 神奈川県
• [Presentation] Angle-Resolved XPS Measurements of GaN and InN Grown by RF-MBE
  • Author(s): T. Yamaguchi, R. Amiya, D. Tajimi, M. Hayashi, Y. Sugiura, T. Honda, N. Uematsu, T. Araki and Y. Nanishi
  • Organizer: 17th OptoElectronics and Communications Conference (OECC 2012)
  • Place of Presentation: Busan, Korea
• [Presentation] In-situ monitoring of InGaN growth using DERI method
  • Author(s): T. Araki, N. Uematsu, M. Yutani, T. Saito, J. Sakaguchi, T. Yamaguchi, T. Fujishima, E. Matioli, T. Palacios, Y. Nanishi
  • Organizer: 4th International Symposium on Growth of III-Nitrides (ISGN2012)
  • Place of Presentation: St. Petersburg, Russia
• [Presentation] Surface acoustic waves and elastic constants of InN epilayers determined by Brillouin scattering
  • Author(s): R. J. Jimenez, N. Domenech-Amador, R. Cusco, C. Prieto, T. Yamaguchi, Y. Nanishi, and L. Artus,
  • Organizer: 4th International Symposium on Growth of III-Nitrides (ISGN2012)
  • Place of Presentation: St. Petersburg, Russia
• [Presentation] Growth of InN, InGaN and those Nano-structures by DERI Method
  • Author(s): Y. Nanishi, T.Yamaguchi, K. Wang, T. Araki and E. Yoon
  • Organizer: 2012 German-Japanese-Spanish Joint Workshop on Frontier Photonics and Electronic Materials and Devices
  • Place of Presentation: Berlin, Germany
  • Invited
• [Presentation] P-type InGaN Grown by RG-MBE Across the Entire Composition Range
  • Author(s): K. Wang, T. Katsuki, J. Sakaguchi, T. Araki, Y. Nanishi
  • Organizer: The 9th International Symposium on Semiconductor Light Emitting Devices 2012
  • Place of Presentation: Berlin, Germany
• [Presentation] Frontier Research of Nitride Semiconductors toward Longer Wavelength and Higher Speed
  • Author(s): Y. Nanishi, T.Yamaguchi, K.Wang, T.Araki and E. Yoon
  • Organizer: 2nd Solid-State Systems Symposium; VLSIs and Semiconductor Related Technologies (4S-2012)
  • Place of Presentation: Ho Chi Minh City, Vietnam
  • Invited
• [Presentation] N-polar InN overgrowth on in situ AlN mask on sapphire substrate
  • Author(s): K. Wang, T. Araki, M. Takeuchi, Y. Nanishi
  • Organizer: The 17th International Conference on Conference on Molecular Beam Epitaxy (MBE-17)
  • Place of Presentation: 奈良県新公会堂 奈良県
• [Presentation] Growth of thick InGaN films with entire alloy composition using DERI method
  • Author(s): T. Yamaguchi, N. Uematsu, T. Araki, T. Honda, E. Yoon and Y. Nanishi
  • Organizer: The 17th International Conference on Conference on Molecular Beam Epitaxy (MBE-17)
  • Place of Presentation: 奈良県新公会堂 奈良県
• [Presentation] Growth of improved quality LT GaN by using a new low temperature growth method
  • Author(s): I. Shin, KeWang, T. Araki, E. Yoon, and Y. Nanishi
  • Organizer: International Workshop on Nitride Semiconductors 2012(IWN2012)
  • Place of Presentation: 札幌コンベンションセンター 北海道
• [Presentation] Surface and Bulk Electronic Structure of Mgdoped InN Analyzed by Hard X-ray Photoelectron Spectroscopy
  • Author(s): M. Imura, S. Tsuda, T. Nagata, Y. Koide, A. Yang, Y. Yamashita, H. Yoshikawa, K. Kobayashi, M. Kaneko, T. Yamaguchi, N. Uematsu, T. Araki, and Y. Nanishi
  • Organizer: International Workshop on Nitride Semiconductors 2012(IWN2012)
  • Place of Presentation: 札幌コンベンションセンター 北海道
• [Presentation] Selective growth of N-polar InN on an in situ AlN mask on sapphire substrate
  • Author(s): K. Wang, T. Araki, M. Takeuchi and Y. Nanishi
  • Organizer: International Workshop on Nitride Semiconductors 2012(IWN2012)
  • Place of Presentation: 札幌コンベンションセンター 北海道
• [Presentation] Growth of High Quality Thin InN Layers by RF-MBE
  • Author(s): T. Araki, N. Uematsu, M. Yutani, J. Sakaguchi, K. Wang, A. Uedono, T. Fujishima, E. Matioli, T. Palacios, Y. Nanishi
  • Organizer: International Workshop on Nitride Semiconductors 2012(IWN2012)
  • Place of Presentation: 札幌コンベンションセンター 北海道
• [Presentation] HVPE growth of InN on InN/sapphire (0001) templates prepared by MBE
  • Author(s): R. Imai, S. Yamamoto, R. Togashi, H. Murakami, Y. Kumagai, T. Yamaguchi, T. Araki, Y. Nanishi, and A. Koukitu
  • Organizer: International Workshop on Nitride Semiconductors 2012(IWN2012)
  • Place of Presentation: 札幌コンベンションセンター 北海道
• [Presentation] Thickness Dependence of Structural and Electrical Properties of Thin InN Grown by RF-MBE
  • Author(s): J. Sakaguchi, T. Araki, T. Fujishima, E. Matioli, T. Palacios, Y. Nanishi
  • Organizer: International Workshop on Nitride Semiconductors 2012(IWN2012)
  • Place of Presentation: 札幌コンベンションセンター 北海道
• [Presentation] Nucleation and density control of uniform and narrow GaN nanorods by molecular beam epitaxy
  • Author(s): Y. Chen, T. Araki, J. Palisaitis, P. O. A. Persson, L. Chen, K. Chen, P. O. Holtz, J. Birch, and Y. Nanishi
  • Organizer: International Workshop on Nitride Semiconductors 2012(IWN2012)
  • Place of Presentation: 札幌コンベンションセンター 北海道
• [Presentation] T-dependence of local vibrational modes of Mg-H complexes in InN:Mg
  • Author(s): R. Cusco, N. Domenech-Amador, L. Artus, K. Wang, T. Yamaguchi, and Y. Nanishi
  • Organizer: International Workshop on Nitride Semiconductors 2012(IWN2012)
  • Place of Presentation: 札幌コンベンションセンター 北海道
• [Presentation] Strong correlation between oxygen donor and nearsurface electron accumulation in non-polar mplane (10-10) InN film
  • Author(s): A. Yang, Y. Yamashita, H Yoshikawa, T. Yamaguchi, M. Imura, M. Kaneko, O. Sakata, Y. Nanishi, and K. Kobayashi
  • Organizer: International Workshop on Nitride Semiconductors 2012(IWN2012)
  • Place of Presentation: 札幌コンベンションセンター 北海道
• [Presentation] Injection-activated defect-governed recombination rate in InN
  • Author(s): S. Nargelas, K. Jarasiunas, M. Vengris, T. Yamaguchi, and Y. Nanishi
  • Organizer: International Workshop on Nitride Semiconductors 2012(IWN2012)
  • Place of Presentation: 札幌コンベンションセンター 北海道
• [Presentation] P-type InGaN across the entire composition range
  • Author(s): K. Wang, T. Katsuki, J. Sakaguchi, T. Araki, Y. Nanishi, K. M. Yu, M. Mayer, E. Alarcon-Llado, J. W. Ager III, W. Walukiewicz
  • Organizer: International Workshop on Nitride Semiconductors 2012(IWN2012)
  • Place of Presentation: 札幌コンベンションセンター 北海道
• [Presentation] Angled-resolved XPS measurements of InN films grown by RF-MBE
  • Author(s): R. Amiya, T. Yamaguchi, D. Tajimi, M. Hayashi, Y. Sugiura, T. Honda, T. Araki and Y. Nanishi
  • Organizer: International Workshop on Nitride Semiconductors 2012(IWN2012)
  • Place of Presentation: 札幌コンベンションセンター 北海道
• [Presentation] In-situ Raman probing of the electron accumulation layer in InN
  • Author(s): E. Alarcon-Llado, K. Wang, T. Araki, Y. Nanishi and J. W. Ager
  • Organizer: International Workshop on Nitride Semiconductors 2012(IWN2012)
  • Place of Presentation: 札幌コンベンションセンター 北海道
• [Presentation] Toward Longer Wavelength and Higher Speed -Challenge to Utilize Full Span of Nitride Semiconductors’ Band gap-
  • Author(s): Y. Nanishi, T.Yamaguchi, K.Wang, T.Araki and E. Yoon
  • Organizer: 2012 Fall Meeting of the Korean Ceramic Society
  • Place of Presentation: Daejoin, Korea
  • Invited
• [Presentation] Recent Development in Growth of InN and In-rich InGaN and Future Prospect
  • Author(s): Y. Nanishi
  • Organizer: 5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2013)
  • Place of Presentation: 名古屋大学 愛知県
  • Invited
• [Presentation] Application of DERI method to InN/InGaN MQW, thick InGaN and InGaN/InGaN MQW structure growth
  • Author(s): T. Yamaguchi, K. Wang, T. Araki, T. Honda, E. Yoon, Y. Nanishi
  • Organizer: SPIE Photonics West 2013
  • Place of Presentation: San Francisco, California, USA
  • Invited
• [Presentation] DERI法InGaN成長におけるラジカルモニタリング技術応用
  • Author(s): 荒木努、阪口順一、上松尚、油谷匡胤、齋藤巧、山口智広、名西やす之、T. Fujishima, E. Matioli, T. Palacios
  • Organizer: 第4回 窒化物半導体結晶成長講演会(プレIWN2012）
  • Place of Presentation: 東京大学生産技術研究所, 東京都
• [Presentation] Growth of high quality LT GaN layer with indium surfactant
  • Author(s): I. S. Shin, K. Wang, T. Araki, E. Yoon and Y. Nanishi
  • Organizer: 31st Electronic Materials Symposium (EMS31)
  • Place of Presentation: ラフォーレ修善寺, 静岡県
• [Presentation] Growth of InGaN film and InGaN/InGaN periodic structure using DERI method
  • Author(s): T. Yamaguchi, N. Uematsu, K. Wang, T. Araki, T. Honda, E. Yoon, and Y. Nanishi
  • Organizer: 31st Electronic Materials Symposium (EMS31)
  • Place of Presentation: ラフォーレ修善寺, 静岡県
• [Presentation] Angled-resolved XPS measurements of In-polar and N-polar InN films
  • Author(s): R. Amiya, T. Yamaguchi, D. Tajimi, M. Hayashi, Y. Sugiura, T. Honda, T. Araki, and Y. Nanishi
  • Organizer: 31st Electronic Materials Symposium (EMS31)
  • Place of Presentation: ラフォーレ修善寺, 静岡県
• [Presentation] R. Amiya, T. Yamaguchi, D. Tajimi, M. Hayashi, Y. Sugiura, T. Honda, T. Araki, and Y. Nanishi
  • Author(s): M. Imura, S. Tsuda, T. Nagata, Y. Koide, A. Yang, Y. Yamashita, H. Yoshikawa, K. Kobayashi, M. Kaneko, T. Yamaguchi, N. Uematsu, R. Iwamoto, T. Araki, and Y. Nanishi
  • Organizer: 31st Electronic Materials Symposium (EMS31)
  • Place of Presentation: ラフォーレ修善寺, 静岡県
• [Presentation] N-polar InN overgrowth on in situ AlN mask on sapphire substrate
  • Author(s): K. Wang, T. Araki, M. Takeuchi, and Y. Nanishi
  • Organizer: 31st Electronic Materials Symposium (EMS31)
  • Place of Presentation: ラフォーレ修善寺, 静岡県
• [Presentation] Growth of InN and In-rich InGaN and those Applications
  • Author(s): Y. Nanishi
  • Organizer: 2012年秋季 第73回 応用物理学会学術講演会
  • Place of Presentation: 愛媛大学城北地区/松山大学文京キャンパス、愛媛県
  • Invited
• [Presentation] P-type InGaN across the entire composition range
  • Author(s): K. Wang, T. Katsuki, J. Sakaguchi, T. Araki, Y. Nanishi, K. M. Yu, M. Mayer, E. Alarcon-Llado, J. W. Ager III, W. Walukiewicz
  • Organizer: 2012年秋季 第73回 応用物理学会学術講演会
  • Place of Presentation: 愛媛大学城北地区/松山大学文京キャンパス 愛媛県
• [Presentation] Angled-resolved X-ray photoelectron spectroscopy of c-plane InN grown by RF-MBE
  • Author(s): R. Amiya, T. Yamaguchi, D. Tajimi, Y. Sugiura, T. Araki, Y. Nanishi, T. Honda
  • Organizer: 2012年秋季 第73回 応用物理学会学術講演会
  • Place of Presentation: 愛媛大学城北地区/松山大学文京キャンパス、愛媛県
• [Presentation] Growth of InGaN-based heterostructures using DERI by RF-MBE
  • Author(s): T. Araki, N. Uematsu, J. Sakaguchi, K. Wang, T. Yamaguchi, E. Yoon, Yasushi Nanishi
  • Organizer: 2012年秋季 第73回 応用物理学会学術講演会
  • Place of Presentation: 愛媛大学城北地区/松山大学文京キャンパス、愛媛県
• [Presentation] Polarity determination of InN films by hard X-ray photoelectron diffraction
  • Author(s): 楊 安麗, 山下良之, 小畠雅明, 松下智裕, 吉川英樹, Pis Igor, 山口智広, 坂田修身, 名西やすし, 小林啓介
  • Organizer: 2012年秋季 第73回 応用物理学会学術講演会
  • Place of Presentation: 愛媛大学城北地区/松山大学文京キャンパス、愛媛県
• [Presentation] RF-MBE法薄膜InN成長における結晶性と電気的特性の膜厚依存性
  • Author(s): 阪口順一, 荒木 努, 藤嶌辰也, Matioli Elison, Palacios Tomas, 名西やす之
  • Organizer: 2012年秋季 第73回 応用物理学会学術講演会
  • Place of Presentation: 愛媛大学城北地区/松山大学文京キャンパス、愛媛県
• [Presentation] 硬X線光電子分光法を用いたInNの表面電子状態評価
  • Author(s): 井村将隆, 津田俊輔, 長田貴弘, 小出康夫, Yang Anli, 山下良之, 吉川英樹, 小林啓介, 名西やすし, 山口智広, 金子昌充, 上松 尚, 荒木 努
  • Organizer: 2012年秋季 第73回 応用物理学会学術講演会
  • Place of Presentation: 愛媛大学城北地区/松山大学文京キャンパス、愛媛県
• [Presentation] DERI法を用いたInGaN系量子ナノ構造のRF-MBE成長
  • Author(s): 荒木 努、上松 尚、阪口 順一、王 科、山口 智広、Euijoon Yoon、名西やす之
  • Organizer: 2012年度電子情報通信学会 レーザ・量子エレクトロニクス研究会
  • Place of Presentation: 大阪市立大学, 大阪府
• [Presentation] RF-MBE 法によるグラフェン/Si (100)基板上GaN 成長
  • Author(s): 荒木努、阪口順一、内村智、名西やす之、T. Fujishima、T. Palacios、A. Zurutuza
  • Organizer: 2013年春季 第60回 応用物理学会学術講演会
  • Place of Presentation: 神奈川工科大学, 神奈川県
• [Book] Chapter: 1 - Molecular-beam epitaxy of InN in Indium Nitride and Related Alloys (Editors: T. D. Veal, C. F. McConville, and W. J. Schaff) (2009)
  • Author(s): Y. Nanishi, T. Arakiand T. Yamaguchi
  • Publisher: CRC
• [Remarks]
  • URL: http://www.ritsumei.ac.jp/se/re/nanishilab/Nanishi-Lab.html
• [Remarks]
  • URL: http://www.ritsumei.ac.jp/se/re/nanishilab/Nanishi-Lab.html
• [Patent(Industrial Property Rights)] 窒化物半導体薄膜の製造方法 (2009)
  • Inventor(s): 山口智広,名西〓之
  • Industrial Property Rights Holder: 学校法人立命館
  • Industrial Property Number: 2009-119315
  • Filing Date: 2009-05-15
  • Overseas
• [Patent(Industrial Property Rights)] 窒化物半導体薄膜の製造方法 (2009)
  • Inventor(s): 山口智広, 名西やす之
  • Industrial Property Rights Holder: 学校法人立命館
  • Filing Date: 2009-05-15