| Budget Amount *help |
¥45,630,000 (Direct Cost: ¥35,100,000、Indirect Cost: ¥10,530,000)
Fiscal Year 2012: ¥8,450,000 (Direct Cost: ¥6,500,000、Indirect Cost: ¥1,950,000)
Fiscal Year 2011: ¥9,620,000 (Direct Cost: ¥7,400,000、Indirect Cost: ¥2,220,000)
Fiscal Year 2010: ¥12,740,000 (Direct Cost: ¥9,800,000、Indirect Cost: ¥2,940,000)
Fiscal Year 2009: ¥14,820,000 (Direct Cost: ¥11,400,000、Indirect Cost: ¥3,420,000)
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| Research Abstract |
To improve the operation stability of GaN-heterostructure transistors, we have carried out characterization and control of electronic states at insulator-semiconductor interfaces, fabrication and characterization of the multi-mesa-channel (MMC) transistors, and the related experiments. By applying the novel simulation and photo-assisted capacitance-voltage methods to Al_2O_3/ AlGaN/GaN structures, we determined the density distribution of electronic states at the Al_2O_3/AlGaN for the first time. It was also found that the MMC structure is very effective in improving the current stability of the GaN-based transistors.
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