| Budget Amount *help |
¥45,240,000 (Direct Cost: ¥34,800,000、Indirect Cost: ¥10,440,000)
Fiscal Year 2012: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2011: ¥11,310,000 (Direct Cost: ¥8,700,000、Indirect Cost: ¥2,610,000)
Fiscal Year 2010: ¥18,200,000 (Direct Cost: ¥14,000,000、Indirect Cost: ¥4,200,000)
Fiscal Year 2009: ¥11,570,000 (Direct Cost: ¥8,900,000、Indirect Cost: ¥2,670,000)
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| Research Abstract |
We havedemonstrated effectiveness of homoepitaxial growth on a vicinal (001) substrate using high-power-density microwave-plasma chemical-vapor-deposition on increases in the crystalline quality and growth rate of diamond films, and have found a new method for suppressing large degradations of carrier mobilities in highly doped samples. Detection efficiency offabricated diamond detectors for deep-ultra-violet light and soft-x-ray at low bias voltages has been substantially improved. Effectiveness of Si-diamond survey meter at heavy radiation doses has also been demonstrated. In addition, a devicestructure has been proposed for a normally-off-type p-i-p diamond FET working at room temperature.
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