| Project/Area Number |
21246049
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tohoku University |
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Principal Investigator |
SAHASHI Masashi 東北大学, 大学院・工学研究科, 教授 (20361123)
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| Co-Investigator(Kenkyū-buntansha) |
DOI Masaaki 東北学院大学, 工学部・電子工学科, 教授 (10237167)
MIYAKE Kousaku 東北大学, 大学院・工学研究科, 助教 (20374960)
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| Project Period (FY) |
2009 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥43,810,000 (Direct Cost: ¥33,700,000、Indirect Cost: ¥10,110,000)
Fiscal Year 2011: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2010: ¥27,560,000 (Direct Cost: ¥21,200,000、Indirect Cost: ¥6,360,000)
Fiscal Year 2009: ¥11,700,000 (Direct Cost: ¥9,000,000、Indirect Cost: ¥2,700,000)
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| Keywords | 電気・電子材料(半導体、誘電体、磁性体、超誘電体、有機物、絶縁体、超伝導体など) / マイクロ波発振磁性体 / ナノ接点 / 強磁性体 / スピンバルブ構造 / 狭窄磁壁 / スピントランスファー / マイクロ波発振 / スピントロニクス / 自己組織化 / ナノ狭窄構造 / スピン伝導 / スピントランスファートルク / スピンダイナミクス / ナノ狭窄磁壁 / ナノオキサイド層 / MR変化率 |
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| Research Abstract |
We have succeeded in obtaining good oscillation power in terms of magnetoresistance ratio with the confined domain wall type magnetoresistive devices, where ~ 1μW(Q=200)and 0. 2μW(Q=600)were confirmed in vortex structure and near anti-parallel state, respectively. These high level oscillations could be explained by Auto-Oscillation model, which means that larger power oscillation with higher Q-value is realized by decreasing threshold current to auto-oscillation mode. In addition, the high sensitivity of 1. 5V/W in STT-FMR measurement was obtained in the confined domain wall MR devices. So, good transmitter/receiver performance of the miniaturized confined domain wall MR devices was verified in this study, leading to realization of wireless chip to chip communication (wireless 3D packaging).
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