| Budget Amount *help |
¥45,110,000 (Direct Cost: ¥34,700,000、Indirect Cost: ¥10,410,000)
Fiscal Year 2012: ¥5,850,000 (Direct Cost: ¥4,500,000、Indirect Cost: ¥1,350,000)
Fiscal Year 2011: ¥9,360,000 (Direct Cost: ¥7,200,000、Indirect Cost: ¥2,160,000)
Fiscal Year 2010: ¥16,250,000 (Direct Cost: ¥12,500,000、Indirect Cost: ¥3,750,000)
Fiscal Year 2009: ¥13,650,000 (Direct Cost: ¥10,500,000、Indirect Cost: ¥3,150,000)
|
|---|
| Research Abstract |
Electronic states of impurities doped in semiconductors are extremely uniform and can be treated as ideal QDs. Such QDs with the uniform electronic states enable to control the interaction between the exciton and photon, and, resultantly, the device performance will come to depend on the impurity density. We developed a novel technique of nitrogen delta-doping into GaAs and clarified the optical properties of the exciton fine structure bound to nitrogen pairs. Furthermore, we demonstrated that the precise control of the fine structure using magnetic field and a scalable change in the strength of the exciton-photon interaction.
|
