| Project/Area Number |
21246053
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Nagoya University (2010-2011)
Hiroshima University (2009) |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
MURAKAMI Hideki 広島大学, 先端物質科学研究科, 助教 (70314739)
SEIICHIRO Higashi 広島大学, 先端物質科学研究科, 教授 (30363047)
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| Project Period (FY) |
2009 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥24,570,000 (Direct Cost: ¥18,900,000、Indirect Cost: ¥5,670,000)
Fiscal Year 2011: ¥9,490,000 (Direct Cost: ¥7,300,000、Indirect Cost: ¥2,190,000)
Fiscal Year 2010: ¥15,080,000 (Direct Cost: ¥11,600,000、Indirect Cost: ¥3,480,000)
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| Keywords | Si量子ドット / 一次元連結 / エレクトロルミネッセンス / LPCVD / 縦積み連結 / Ge量子ドット / フローティングゲート |
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| Research Abstract |
Self-aligned Si-based quantum dots(Si-QDs) have been successfully fabricated on ultrathin SiO_2 by controlling low-pressure chemical vapor deposition(LPCVD) using pure SiH_4 and/or Si_2H_6, selective Ge LPCVD from 5% GeH_4 diluted with He, thermal oxidation of the dots and subsequent thermal desorption of Ge oxide. In semitransparent Au-gate diodes with self-aligned dots so-prepared, when carriers were injected to the self-aligned Si-QDs from the n-Si(100) substrate for electrons and from the Au top electrode for holes, electroluminescence(EL) in the near-infrared region at room temperature becomes observable with an increase in current at positive biases over a threshold voltage as low as~ 1. 2 V at the Au top electrode. Note that, in the case of an areal dot density of ~10^<13> cm^<-2>, the EL threshold voltage was reduced down to~ 60% of that of ~10^<11> cm^<-2> and emission intensity was enhanced markedly by a factor of ~425 in comparison with the case of ~10^<11> cm^<-2> under the same current density. This is clear evidence of not only an increase in radiative recombination rate in the self-aligned structure but also an improvement of recombination efficiency due to a decrease in current leakage with increasing dot density.
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