Control of Electronic Properties of One-Dimensionally Self-Aligned Si-Ge based Quantum Dots and Its Electroluminescence
| Project/Area Number |
21246053
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Nagoya University (2010-2011)
Hiroshima University (2009) |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
MURAKAMI Hideki 広島大学, 先端物質科学研究科, 助教 (70314739)
SEIICHIRO Higashi 広島大学, 先端物質科学研究科, 教授 (30363047)
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| Project Period (FY) |
2009 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥24,570,000 (Direct Cost: ¥18,900,000、Indirect Cost: ¥5,670,000)
Fiscal Year 2011: ¥9,490,000 (Direct Cost: ¥7,300,000、Indirect Cost: ¥2,190,000)
Fiscal Year 2010: ¥15,080,000 (Direct Cost: ¥11,600,000、Indirect Cost: ¥3,480,000)
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| Keywords | Si量子ドット / 一次元連結 / エレクトロルミネッセンス / LPCVD / 縦積み連結 / Ge量子ドット / フローティングゲート |
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| Research Abstract |
Self-aligned Si-based quantum dots(Si-QDs) have been successfully fabricated on ultrathin SiO_2 by controlling low-pressure chemical vapor deposition(LPCVD) using pure SiH_4 and/or Si_2H_6, selective Ge LPCVD from 5% GeH_4 diluted with He, thermal oxidation of the dots and subsequent thermal desorption of Ge oxide. In semitransparent Au-gate diodes with self-aligned dots so-prepared, when carriers were injected to the self-aligned Si-QDs from the n-Si(100) substrate for electrons and from the Au top electrode for holes, electroluminescence(EL) in the near-infrared region at room temperature becomes observable with an increase in current at positive biases over a threshold voltage as low as~ 1. 2 V at the Au top electrode. Note that, in the case of an areal dot density of ~10^<13> cm^<-2>, the EL threshold voltage was reduced down to~ 60% of that of ~10^<11> cm^<-2> and emission intensity was enhanced markedly by a factor of ~425 in comparison with the case of ~10^<11> cm^<-2> under the same current density. This is clear evidence of not only an increase in radiative recombination rate in the self-aligned structure but also an improvement of recombination efficiency due to a decrease in current leakage with increasing dot density.
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Report
(4 results)
Research Products
(154 results)
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[Journal Article] Collective Tunneling Model in Charge Trap Type NVM Cell2010
Author(s)
M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi, and T. Endoh
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Journal Title
Jpn. J. Appl. Phys.
Volume: Vol.50, No.4
Issue: 4S
Pages: 04DD04-04DD04
DOI
Related Report
Peer Reviewed
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[Journal Article] Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor
Author(s)
M. Muraguchi, Y. Sakurai, Y. Takada, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki, Y. Shigeta, T. Endoh
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Journal Title
IEICE
Volume: Vol.94-C, No.5
Pages: 730-736
NAID
Related Report
Peer Reviewed
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