Formation of Strained Ge Channel and Material Evaluation for High performance ULSI
| Project/Area Number |
21246054
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kyushu University |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
WANG Dong 九州大学, 産学連携センター, 特任准教授 (10419616)
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| Research Collaborator |
YANG Haigui JSPS, 外国人, 特別研究員
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| Project Period (FY) |
2009 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥46,410,000 (Direct Cost: ¥35,700,000、Indirect Cost: ¥10,710,000)
Fiscal Year 2011: ¥5,850,000 (Direct Cost: ¥4,500,000、Indirect Cost: ¥1,350,000)
Fiscal Year 2010: ¥12,220,000 (Direct Cost: ¥9,400,000、Indirect Cost: ¥2,820,000)
Fiscal Year 2009: ¥28,340,000 (Direct Cost: ¥21,800,000、Indirect Cost: ¥6,540,000)
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| Keywords | 半導体物性 / 電子・電気材料 / 結晶工学 / 先端機能デバイス / 絶縁膜 |
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| Research Abstract |
In this study, we established the fabrication of strained SiGe-on-insulator(SGOI) using Ge condensation by dry oxidation and the fabrication of high permittivity(High-k) gate insulator on Ge. Through these researches, we obtained the following results. The SGOI with a Ge fraction of 50% showed high strain ratio and hole channel mobility, which were 1. 7% and 570 cm^2/V・s, respectively. We achieved the High-k/Ge gate stack with the performances of an equivalent SiO_2 thickness(EOT) of 1. 0 nm, an interface state density of 9×10^<11> cm^<-2> eV^<-1>, and a leakage current of 4 orders of magnitude lower than SiO_2 with the same EOT. Also, we fabricated n-and p-MOSFET and achieved an electron mobility of 1097 cm^2/V・s and a hole mobility of 376 cm^2/V・s, which mean approximately 1. 5 times enhancement compared with Si.
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Report
(4 results)
Research Products
(74 results)
