|Budget Amount *help
¥47,450,000 (Direct Cost: ¥36,500,000、Indirect Cost: ¥10,950,000)
Fiscal Year 2012: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2011: ¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2010: ¥6,240,000 (Direct Cost: ¥4,800,000、Indirect Cost: ¥1,440,000)
Fiscal Year 2009: ¥33,670,000 (Direct Cost: ¥25,900,000、Indirect Cost: ¥7,770,000)
Bonding mechanism of cone-shaped microbump electrode, which was invented by the leader of this project research, has been investigated. Application of the mechanism to development of three dimensional integration of semiconductor circuits has also been investigated. This project achieved room temperature bonding of high density micro interconnect, which was not able to carry out using existing technology. The developed technology has been applied to integration of heterogeneous integration on silicon. As anexample, a high-resolution near infrared image sensor has been fabricated using the developed technology.