Development of hetero-structure control and opto-electronics device application technology based on III-nitride semiconductor nanowall crystal
| Project/Area Number |
21310087
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Microdevices/Nanodevices
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| Research Institution | Sophia University |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
KISHINO Katsumi 上智大学, 理工学部, 教授 (90134824)
NOMURA Ichirou 上智大学, 理工学部, 准教授 (00266074)
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| Project Period (FY) |
2009 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥19,370,000 (Direct Cost: ¥14,900,000、Indirect Cost: ¥4,470,000)
Fiscal Year 2011: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2010: ¥6,370,000 (Direct Cost: ¥4,900,000、Indirect Cost: ¥1,470,000)
Fiscal Year 2009: ¥8,580,000 (Direct Cost: ¥6,600,000、Indirect Cost: ¥1,980,000)
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| Keywords | ナノ光デバイス / ナノ電子デバイス / ガリウムナイトライド / ナノウォール / 半導体レーザ / FET / 窒化物半導体 / 選択成長 / 電界効果トランジスタ / ナノ結晶 / 分子線エピタキシー / 半導体超微細化 / GaN / ナノコラム |
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| Research Abstract |
The selective area RF-MBE growth technology of artificially shape controlled thin GaN nano-crystal of "nanowall" was established. It was found that dislocation stopping mechanism at the bottom of nanowall brings about high quality dislocation-free crystal growth. Nanowall top shape control technique, growth conditions of embedded InGaN active layer and dependency of emission characteristics of InGaN/GaN nanowall was clarified. The potentiality of GaN nanowall for optical and electronic device application was proved by room temperature photo-pumped lasing of GaN nanowall and first demonstration of AlGaN/GaN heterostructure nano-FET.
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Report
(4 results)
Research Products
(159 results)
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[Presentation] Epitaxial Growth and Emission Device Applications of GaN-based Nanocolumns2011
Author(s)
K.Kishino, K.Yamano, S.Ishizawa, J.Kamimura, T.Kouno, M.Goto, R.Araki, T.Suzuki, A.Kikuchi, K.Nagashima, K.Kamiyama
Organizer
SemiconNano 2011, 3rd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
Place of Presentation
Traunkirchen, Austria(Invited)
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