Application of chemical lift-off process to the fabrication of vertical ultra-violet LEDs
Project/Area Number |
21360001
|
Research Category |
Grant-in-Aid for Scientific Research (B)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Applied materials science/Crystal engineering
|
Research Institution | Tohoku University |
Principal Investigator |
YAO Takafumi 東北大学, 学際科学国際高等研究センター, 客員教授 (60230182)
|
Co-Investigator(Kenkyū-buntansha) |
GOTO Takenari 東北大学, 学際科学国際高等研究センター, 研究支援者 (10004342)
FUJII Katsushi 東北大学, 学際科学国際高等研究センター, 客員准教授 (80444016)
LEE Hyunjae 東北大学, 学際科学国際高等研究センター, 寄附研究部門研究員 (10584063)
小池 佳代 東北大学, 学際科学国際高等研究センター, 技術補佐員 (80532423)
|
Project Period (FY) |
2009 – 2011
|
Project Status |
Completed (Fiscal Year 2011)
|
Budget Amount *help |
¥18,460,000 (Direct Cost: ¥14,200,000、Indirect Cost: ¥4,260,000)
Fiscal Year 2011: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2010: ¥6,370,000 (Direct Cost: ¥4,900,000、Indirect Cost: ¥1,470,000)
Fiscal Year 2009: ¥11,310,000 (Direct Cost: ¥8,700,000、Indirect Cost: ¥2,610,000)
|
Keywords | 窒化物半導体 / LED / 紫外LED / ケミカル・リフト・オフ / 発光ダイオード(LED) / GaN / AlGaN / InGaN / CrN / ケミカルリフトオフ / 窒化 |
Research Abstract |
Recently, blue LEDs and white LEDs have been already in the commercial market and are widely used in our daily life. In order to apply the LED technology to general lighting, high-brightness LEDs emitting uv light are highly demanded. To this end, we propose to apply the chemical lift-off (CLO)technique to detach sapphire substrates after growing uv LED structures to fabricate vertical LED structures. We have demonstrated the fabrication of 385-nm band high-brightness uv LEDs by means of CLO technique. The emitting wavelength can be tuned by adjusting the composition of In in the active InGaN/GaN QW layers. The emission intensity has been greatly improved by adapting proper AlGaN cladding structures. These achievements can be applied to the fabrication of deep uv LEDs.
|
Report
(4 results)
Research Products
(26 results)
-
-
-
-
-
-
[Journal Article] Correlation between structural and optical properties of a-plane GaN films grown on r-plane sapphire by metal organic chemical-vapor deposition2010
Author(s)
Jung, M ; Chang, J ; Lee, H ; Ha, JS ; Park, JS ; Park, S ; Fujii, K ; Yao, T ; Kil, GS ; Lee, S ; Cho, M ; Whang, S
-
Journal Title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 28
Pages: 623-626
Related Report
Peer Reviewed
-
[Journal Article] An empirical equation including the strain effect for optical transition energy of strained and fully relaxed GaN films2010
Author(s)
Lee, SW ; Ha, JS ; Lee, HJ ; Lee, HJ ; Goto, H ; Hanada, T ; Goto, T ; Fujii, K ; Cho, MW ; Yao, T
-
Journal Title
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume: 43
Pages: 175101-175101
Related Report
Peer Reviewed
-
-
[Journal Article] An empirical equation including the strain effect for optical transition energy of strained and fully relaxed GaN films2010
Author(s)
Lee, SW; Ha, JS; Lee, HJ; Lee, HJ; Goto, H; Hanada, T; Goto, T; Fujii, K; Cho, MW; Yao, T
-
Journal Title
JOURNAL OF PHYSICS D-APPHED PHYSICS
Volume: 43
Pages: 175101-175101
Related Report
Peer Reviewed
-
-
-
[Journal Article] X-ray photoelectron spectroscopy study on the CrN surface grown on sapphire substrate to control the polarity of ZnO by plasma-assisted molecular beam epitaxy2009
Author(s)
Chang JH, Jung MN, Park JS, Park SH, Im IH, Lee HJ, Ha JS, Fujii K, Hanada T, Yao T, Murakami Y, Ohtsu N, Kil GS
-
Journal Title
Applied Surface Science
Volume: 255
Pages: 8582-8586
Related Report
Peer Reviewed
-
-
[Journal Article] Hydride vapor phase epitaxy of GaN on the vicinal c-sapphire with a CrN interlayer2009
Author(s)
Lee HJ, Ha JS, Lee HJ, Lee SW, Lee SH, Goto H, Hong SK, Cho MW, Yao T, Fujito K, Shimoyama K, Namita H, Nagao S
-
Journal Title
Journal of Crystal Growth
Volume: 311
Pages: 470-473
Related Report
Peer Reviewed
-
-
[Journal Article] X-ray photoelectron spectroscopy study on the CrN surface grown on sapphire substrate to control the polarity of ZnO by plasma-assisted molecular beam epitaxy2009
Author(s)
Chang JH, Jung MN, Park JS, Park SH, Im IH, Lee HJ, Ha JS, Fujii K, Hanada T, Yao T, Murakami Y, Ohtsu N, Kil GS
-
Journal Title
Applied Surface Science 255
Pages: 8582-8586
Related Report
Peer Reviewed
-
-
[Journal Article] Hydride vapor phase epitaxy of GaN on the vicinal c-sapphire with a CrN interlayer2009
Author(s)
Lee HJ, Ha JS, Lee HJ, Lee SW, Lee SH, Goto H, Hong SK, Cho MW, Yao T, Fujito K, Shimoyama K, Namita H, Nagao S
-
Journal Title
Journal of Crystal Growth 311
Pages: 470-473
Related Report
Peer Reviewed
-
[Journal Article]2000
Author(s)
T.Yao, S.K.Hong
-
Journal Title
Oxide and Nitride Semiconductors(Springer)
Pages: 1-517
Related Report
-
-
-
-
-
-
-