Large grain-sized FeSi_2 films by micro-channel epitaxy for infrared detectors

• Project/Area Number: 21360002
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: University of Tsukuba
• Principal Investigator: SUEMASU Takashi 筑波大学, 数理物質系, 教授 (40282339)
• Co-Investigator(Kenkyū-buntansha): AKIYAMA Kensuke 神奈川県産業技術センター, 主任研究員 (70426360)
• Co-Investigator(Renkei-kenkyūsha): SEKIGUCHI Takashi 物質・材料研究機構, グループリーダー (00179334)
• Project Period (FY): 2009 – 2011
• Project Status: Completed (Fiscal Year 2011)
• Budget Amount: ¥16,510,000 (Direct Cost: ¥12,700,000、Indirect Cost: ¥3,810,000); Fiscal Year 2011: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000); Fiscal Year 2010: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000); Fiscal Year 2009: ¥10,140,000 (Direct Cost: ¥7,800,000、Indirect Cost: ¥2,340,000)
• Keywords: 新機能材料 / 半導体シリサイド / マイクロチャネルエピタキシー / MOCVD / 鉄シリサイド / 種結晶 / 赤外受光素子 / ホール測定 / 量子効率 / 原子状水素 / MBE / 格子不整合

Research Abstract

We have epitaxially grown undoped β-FeSi_2 films on Si (111) substrates via atomic-hydrogen-assisted molecular-beam epitaxy. They showed n-type conduction and had a residual electron density that was more than two orders of magnitude lower than the hole density of films grown without atomic hydrogen (of the order of 10^<16> cm^<-3> at room temperature). We have also achieved the formation of β-FeSi_2 epitaxial films with grain-sizes exceeding 1 μm on SOI substrates by metalorganic vapor phase epitaxy using β-FeSi_2 island-like templates formed by reactive deposition epitaxy.

Research Products

• [Journal Article] Minority-carrier diffusion length, minority-carrier lifetime and photoresponsivity in β-FeSi2 layers grown by molecular-beam epitaxy (2011)
  • Author(s): K.Akutsu, H.Kawakami, M.Suzuno, T.Yaguchi, K.Jiptner, J.Chen, T.Sekiguchi, T.Ootsuka, T.Suemasu
  • Journal Title: Journal of Applied Physics Volume: 109 Issue: 12 Pages: 1-6
  • DOI: 10.1063/1.3596565
  • Peer Reviewed
• [Journal Article] Molecular beam epitaxy of β-FeSi_2 films on Si (111) substrates and its influence on minority-carrier diffusion length of Si measured by EBIC (2011)
  • Author(s): H. Kawakami, M. Suzuno, K. Akutsu, J. Chen, Y. Fuxing, T. Sekiguchi, and T. Suemasu
  • Journal Title: Physics Procedia Volume: 11 Pages: 23-26
  • DOI: 10.1016/j.phpro.2011.01.029
• [Journal Article] Effect of introducing β-FeSi_2 template layers on the defect density and minority carrier diffusion length in Si nearby p-β-FeSi_2/n-Si heterointerface (2011)
  • Author(s): H. Kawakami, M. Suzuno, K. Akutsu, J. Chen, K. Jiptner, T. Sekiguchi, and T. Suemasu
  • Journal Title: Japanese Journal of Applied Physics Volume: 50 Issue: 4R Pages: 1-4
  • DOI: 10.1143/jjap.50.041303
• [Journal Article] Metalorganic chemical vapor deposition of β-FeSi_2 seed crystals formed on Si substrates (2011)
  • Author(s): M.Suzuno, K.Akutsu, H.Kawakami, K.Akiyama, T.Suemasu
  • Journal Title: Thin Solid Films Volume: 519 Issue: 24 Pages: 8473-8476
  • DOI: 10.1016/j.tsf.2011.05.029
  • Peer Reviewed
• [Journal Article] Effect of Introducing β-FeSi_2 Template Layers on Defect Density and Minority Carrier Diffusion Length in Si Region near p-β-FeSi_2/n-Si Heterointerface (2011)
  • Author(s): 川上, 他6名
  • Journal Title: Japanese Journal of Applied Physics Volume: 印刷中
  • Peer Reviewed
• [Presentation] Si上大粒径β-FeSi_2膜マイクロチャネルエピタキシーのためのマスク種及び試料作製条件の検討 (2012)
  • Author(s): 鈴野光史
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学(東京都)
  • Year and Date: 2012-03-17
• [Presentation] 原子状水素援用MBE法により作製したSi基板上β-FeSi_2薄膜の電気特性評価 (2012)
  • Author(s): 舟瀬芳人
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学(東京都)
  • Year and Date: 2012-03-16
• [Presentation] Characterization of epitaxial β-FeSi_2 thin films on Si substrate by SEM, EBIC and EBSD imaging (2011)
  • Author(s): K. Jiptner, H. Kawakami, J. Chen, T. Suemasu and T. Sekiguchi
  • Organizer: 21st International Photovoltaic Science and Engineering Conference (PVSEC)
  • Place of Presentation: Fukuoka, Japan
  • Year and Date: 2011-11-01
• [Presentation] Si上大粒径β-FeSi_2膜マイクロチャネルエピタキシーのための成長条件検討 (2011)
  • Author(s): 鈴野光史, 舟瀬芳人, 秋山賢輔, 都甲薫, 末益崇
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形
  • Year and Date: 2011-09-01
• [Presentation] Si基板上にエピ成長したβ-FeSi_2薄膜のSEM/EBSD/EBIC評価 (2011)
  • Author(s): カロリンイプトナー, 川上英輝, 陳君, 末益崇, 関口隆
  • Organizer: 第58回応用物理学関係連合講演会
  • Place of Presentation: 神奈川
  • Year and Date: 2011-03-26
• [Presentation] 原子状水素援用MBE法によるβ-FeSi_2膜のキャリア密度の低減と電気特性評価 (2010)
  • Author(s): 阿久津恵一, 鈴野光史, 川上英輝, 末益崇
  • Organizer: 第71回応用物理学会学術講演会
  • Year and Date: 2010-09-17
• [Presentation] MBE法で形成したβ-FeSi_2膜のEBICによる拡散長評価 (2010)
  • Author(s): 川上英輝, 鈴野光史, 阿久津恵一, 陳君, Karolin Jiptner, 関口隆史, 末益 崇
  • Organizer: 第71回応用物理学会学術講演会
  • Year and Date: 2010-09-17
• [Presentation] 原子状水素援用MBE法によるβ-FeSi_2膜のキャリア密度の低減と電気特性評価 (2010)
  • Author(s): 阿久津恵一
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学
  • Year and Date: 2010-09-17
• [Presentation] MBE法で形成したβ-FeSi_2膜のEBICによる拡散長評価 (2010)
  • Author(s): 川上英輝
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学
  • Year and Date: 2010-09-17
• [Presentation] Metalorganic Chemical Vapor Deposition of β-FeSi_2 on β-FeSi_2 Seed Crystals formed on Si substrates (2010)
  • Author(s): M. Suzuno, K. Akutsu, H. Kawakami, K. Akiyama, and T. Suemasu
  • Organizer: APAC Silicide
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 2010-07-26
• [Presentation] Metalorganic Chemical Vapor Deposition of β-FeSi_2 on β-FeSi_2 Seed Crystals formed on Si substrates (2010)
  • Author(s): 鈴野光史
  • Organizer: APAC Silicide 2010
  • Place of Presentation: つくば国際会議場
  • Year and Date: 2010-07-26
• [Presentation] Molecular beam epitaxy of β-FeSi_2 films on Si (111) substrates and its influence on minority-carrier diffusion length of Si measured by EBIC (2010)
  • Author(s): H. Kawakami, M. Suzuno, K. Akutsu, J. Chen, Y. Fuxing, T. Sekiguchi, and T. Suemasu
  • Organizer: APAC Silicide
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 2010-07-24
• [Presentation] Reduction of carrier concentrations of β-FeSi_2 films by atomic hydrogen-assisted molecular beam epitaxy (2010)
  • Author(s): K. Akutsu, M. Suzuno, H. Kawakami, and T. Suemasu
  • Organizer: APAC Silicide
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 2010-07-24
• [Presentation] Reduction of residual carrier concentrations in undoped β-FeSi_2 films by atomic hydrogen-assisted molecular beam epitaxy (2010)
  • Author(s): M. Suzuno, K. Akutsu, H. Kawakami, and T. Suemasu
  • Organizer: International Conference on Nanophotonics
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 2010-06-01
• [Presentation] Reduction of residual carrier concentrations in undoped β-FeSi_2 films by atomic hydrogen-assisted molecular beam epitaxy (2010)
  • Author(s): 鈴野光史
  • Organizer: International Conference on Nanophotonics 2010
  • Place of Presentation: つくば国際会議場
  • Year and Date: 2010-06-01
• [Presentation] MBE法によるSi基板へのβ-FeSi_2膜の成長とEBICによる拡散長評価 (2010)
  • Author(s): 川上英輝, 鈴野光史, 阿久津恵一, 陳君, 殷福星, 関口隆史, 末益崇
  • Organizer: 第57回応用物理学関係連合講演会
  • Year and Date: 2010-03-18
• [Presentation] マイクロチャネルエピタキシー法による大粒径β-FeSi_2膜の成長を目指して (2010)
  • Author(s): 鈴野光史, 阿久津恵一, 川上英輝, 秋山賢輔, 末益崇
  • Organizer: 第57回応用物理学関係連合講演会
  • Year and Date: 2010-03-18
• [Presentation] マイクロチャネルエピタキシー法による大粒径β-FeSi_2膜の成長を目指して (2010)
  • Author(s): 鈴野光史
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学
  • Year and Date: 2010-03-18
• [Presentation] 原子状水素援用MBE法によるβ-FeSi_2膜のエピタキシャル成長と特性評価 (2010)
  • Author(s): 阿久津恵一
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学
  • Year and Date: 2010-03-18
• [Presentation] シリサイド半導体を用いたSi系薄膜結晶太陽電池を目指して (2009)
  • Author(s): 末益崇
  • Organizer: 東北大多元物質科学研究所 素材工学研究懇談会
  • Place of Presentation: 東北大学
  • Year and Date: 2009-11-18
• [Presentation] β-FeSi_2単結晶島を成長核とするMOCVD横方向成長を用いた大結晶粒β-FeSi_2膜の作製 (2009)
  • Author(s): 鈴野光史
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学
  • Year and Date: 2009-09-10
• [Presentation] Enhancement of photoresponsivity, minority-carrier diffusion length and lifetime in β-FeSi_2 films grown by atomic hydrogen-assisted molecular beam epitaxy
  • Author(s): H. Kawakami, M. Suzuno, K. Akutsu, T. Yaguchi, J. Chen, K. Jiptner, T. Sekiguchi, and T. Suemasu
  • Organizer: Asian School-Conference on Physics and Technology of Nanostructured Materials
  • Place of Presentation: Vladivostok, Russia
• [Presentation] MicroChannel epitaxy of β-FeSi_2 on Si (001) substrate
  • Author(s): M. Suzuno, K. Akutsu, H. Kawakami, T. Yaguchi, K. Akiyama, and T. Suemasu
  • Organizer: Asian School-Conference on Physics and Technology of Nanostructured Materials
  • Place of Presentation: Vladivostok, Russia
• [Remarks]
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• [Remarks]
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• [Remarks]
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