Characterization of Defect Levels with Energy and Spatial Distribution by Deep Level Microscope

• Project/Area Number: 21360003
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Saitama University
• Principal Investigator: KAMATA Norihiko 埼玉大学, 大学院・理工学研究科, 教授 (50211173)
• Co-Investigator(Kenkyū-buntansha): FUKUDA Takeshi 埼玉大学, 大学院・理工学研究科, 助教 (40509121) ; HIRAYAMA Hideki 理化学研究所 (70270593)
• Project Period (FY): 2009 – 2011
• Project Status: Completed (Fiscal Year 2011)
• Budget Amount: ¥17,290,000 (Direct Cost: ¥13,300,000、Indirect Cost: ¥3,990,000); Fiscal Year 2011: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000); Fiscal Year 2010: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000); Fiscal Year 2009: ¥9,490,000 (Direct Cost: ¥7,300,000、Indirect Cost: ¥2,190,000)
• Keywords: 欠陥準位 / フォトルミネッセンス / 2波長励起 / 非接触測定

Research Abstract

By utilizing both above-gap and below-gap excitation sources with a gated CCD camera, the scheme of two-wavelength excited photoluminescence has been improved to detect nonradiative recombination (NRR) centers in various materials. An energy distribution of NRR centers at around 1.55eV was obtained in an InGaN quantum well. Detection of NRR centers in InGaAs quantum wells and Ba_3Si_6O_<12>N_2:Eu^<2+> phosphors became possible for the first time.

Research Products

• [Journal Article] Ba3Si6O12N2:Eu2+蛍光体の2波長励起フォトルミネッセンス評価 (2012)
  • Author(s): 石岡亮, 五十嵐航平, 福田武司, 下村康夫, 鎌田憲彦
  • Journal Title: 信学技報, EID2011-19 Volume: Vol.111 Pages: 21-24
• [Journal Article] Ba_3Si_6O_12N_2:Eu^<2+>蛍光体の2波長励起フォトルミネッセンス評価 (2012)
  • Author(s): 石岡亮、五十嵐航平、福田武司、下村康夫、鎌田憲彦
  • Journal Title: 電子情報通信学会 信学技報 電子ディスプレイ研究会EID2011-19 (2012.1.27) Volume: 111 Pages: 21-24
  • NAID: 10030321971
• [Journal Article] AlGaN系深紫外LEDの進展と展望(Invited Review) (2011)
  • Author(s): 平山秀樹, 藤川紗千恵, 塚田悠介, 鎌田憲彦
  • Journal Title: 応用物理 Volume: Vol.80, No.4 Pages: 319-324
  • Peer Reviewed
• [Journal Article] Ba_3Si_6O_<12>N_2 : Eu^<2+>蛍光体のフォトー及び熱ルミネッセンス評価 (2011)
  • Author(s): 石岡亮, 五十嵐航平, 福田武司, 木島直人, 鎌田憲彦
  • Journal Title: 電子情報通信学会EID2010-28 Pages: 25-28
  • NAID: 10027800099
• [Journal Article] AlGaN系深紫外LEDの進展と展望 (2011)
  • Author(s): 平山秀樹、藤川紗千恵、塚田悠介、鎌田憲彦
  • Journal Title: 応用物理 Volume: 80(Invited Review) Pages: 319-324
  • NAID: 10027969857
  • Peer Reviewed
• [Journal Article] 222nm Deep-Ultraviolet AlGaN QW Light-Emitting Diode with Vertical Emission Properties (2010)
  • Author(s): H. Hirayama, N. Noguchi, N. Kamata
  • Journal Title: Appl. Phys. Exp. Volume: 3
  • Peer Reviewed
• [Journal Article] Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN LEDs by Using a Multiquantum-Barrier Electron Blocking Layer (2010)
  • Author(s): H. Hirayama, Y. Tsukada, T. Maeda, N. Kamata
  • Journal Title: Appl. Phys. Exp. Volume: 3
  • Peer Reviewed
• [Journal Article] 深紫外領域AlGaN系結晶のフォトルミネッセンス評価 (2010)
  • Author(s): 五十嵐航平、石岡亮、塚田悠介、福田武司、本多善太郎、平山秀樹、鎌田憲彦
  • Journal Title: 電子情報通信学会技術研究報告(EID2010-31) Volume: Vol.110,No.404 Pages: 41-44
  • NAID: 10027800136
• [Journal Article] Ba_3Si_6O_<12>N_2:Eu^<2+>蛍光体のフォトー及び熱ルミネッセンス評価 (2010)
  • Author(s): 石岡亮、五十嵐航平、福田武司、木島直人、鎌田憲彦
  • Journal Title: 電子情報通信学会技術研究報告(EID2010-28) Volume: Vol.110,No.404 Pages: 25-28
  • NAID: 10027800099
• [Journal Article] Fabrication of a low threading dislocation density ELO-AlN template for application to deep-UV LEDs (2010)
  • Author(s): 平山秀樹, S.Fujikawa, 乗松潤, T.Takano, K.Tsubaki, 鎌田憲彦
  • Journal Title: Phys.Stat.Sol.(c) (in press)
  • Peer Reviewed
• [Journal Article] 222nm Deep-Ultraviolet AlGaN Quantum WelLight-Emitting Diode with Vertical Emission Properties (2010)
  • Author(s): 平山秀樹, N.Noguchi, 鎌田憲彦
  • Journal Title: Appl.Phys.Exp. 3 Pages: 32102-32102
  • Peer Reviewed
• [Journal Article] Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer (2010)
  • Author(s): 平山秀樹, 塚田悠介, T.Maeda, 鎌田憲彦
  • Journal Title: Appl.Phys.Exp. 3 Pages: 31002-31002
  • NAID: 10027013818
  • Peer Reviewed
• [Journal Article] 深紫外域AlGaN-LEDの高品質化 (2010)
  • Author(s): 鎌田憲彦, 乗松潤, 塚田悠介, 秋葉雅弘, 福田武司, 平山秀樹
  • Journal Title: Proc.Human Photonics Forum Pages: 22-27
• [Journal Article] Fabrication of Low Threading Dislocation Density ELO-AlN Template for Application to Deep-UV LEDs (2009)
  • Author(s): H. Hirayama, S. Fujikawa, J. Norimatsu, T. Takano, K. Tsubaki, N. Kamata
  • Journal Title: Phys. Stat. Sol.(c) Volume: 6, Issue S2
  • Peer Reviewed
• [Journal Article] 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire (2009)
  • Author(s): H. Hirayama, S. Fujikawa, N. Noguchi, J. Norimatsu, T. Takano, K. Tsubaki, N. Kamata
  • Journal Title: Physica Status Solidi (a) Volume: 206 Pages: 1176-1182
  • Peer Reviewed
• [Journal Article] Fabrication of low threading dislocation density ELO-AlN template for application to deep-UV LEDs (2009)
  • Author(s): H. Hirayama, S. Fujikawa, J. Norimatsu, T. Takano, K. Tsubaki, N. Kamata
  • Journal Title: Phys. Stat. Sol.(c) Volume: Vol.6, Issue S2
  • Peer Reviewed
• [Journal Article] 222nm single-peaked deep-UV LED with thin AlGaN quantum well layer (2009)
  • Author(s): N.Noguchi, 平山秀樹, T.Yatabe, 鎌田憲彦
  • Journal Title: Phys.Stat.Sol.(c) 6
  • Peer Reviewed
• [Journal Article] 222-282nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire (2009)
  • Author(s): 平山秀樹, S.Fujikawa, N.Noguchi, 乗松潤, T.Takano, K.Tsubaki, 鎌田憲彦
  • Journal Title: Physica Status Solidi A 206 Pages: 1176-1182
  • Peer Reviewed
• [Journal Article] 深紫外領域AlGaN系結晶のフォトルミネッセンス評価
  • Author(s): 五十嵐航平, 石岡亮, 塚田悠介, 福田武司, 本多善太郎, 平山秀樹, 鎌田憲彦
  • Journal Title: 電子情報通信学会EID2010-31 Pages: 41-44
  • NAID: 10027800136
• [Presentation] Reduction of Macro-Step Geometry and Abnormal Nuclei on AlN/Sapphire for use as Deep-UV LED Templates (2011)
  • Author(s): N. Maeda, H. Hirayama, M. Akiba, N. Kamata
  • Organizer: 9th Int. Conf. on Nitride Semiconductors (ICNS-9)
  • Place of Presentation: Glasgow, UK
  • Year and Date: 2011-07-12
• [Presentation] Reduction of Macro-Step Geometry and Abnormal Nuclei on AlN/Sapphire for use as Deep-UV LED Templates (2011)
  • Author(s): N.Maeda, H.Hirayama, M.Akiba, N.Kamata
  • Organizer: 9^<th> International Conference on Nitride Semiconductors (ICNS-9), PA1.18
  • Place of Presentation: Glasgow, UK
  • Year and Date: 2011-07-12
• [Presentation] Marked Increase of Injection Efficiency in AlGaN Deep-UV LEDs (2011)
  • Author(s): H. Hirayama, Y. Tsukada, M. Akiba, Y. Tomita, S. Fujikawa, N. Maeda, N. Kamata
  • Organizer: 9th International Conference on Nitride Semiconductors (ICNS-9)
  • Place of Presentation: Glasgow, UK
  • Year and Date: 2011-07-10
• [Presentation] Growth of Flat and Thin p-GaN Contact Layer by NH3 Pulse-flow Method for High Light-Extraction AlGaN Deep-UV LEDs (2011)
  • Author(s): M. Akiba, Y. Tomita, H. Hirayama, Y. Tsukada, N. Maeda, N. Kamata
  • Organizer: 9th International Conference on Nitride Semiconductors (ICNS-9)
  • Place of Presentation: Glasgow, UK
  • Year and Date: 2011-07-10
• [Presentation] Marked Increase of Injection Efficiency in AlGaN Deep-UV LEDs (2011)
  • Author(s): H.Hirayama, Y.Tsukada, M.Akiba, Y.Tomita, S.Fujikawa, N.Maeda, N.Kamata
  • Organizer: 9^<th> International Conference on Nitride Semiconductors (ICNS-9), F4.1
  • Place of Presentation: Glasgow, UK
  • Year and Date: 2011-07-10
• [Presentation] Growth of Flat and Thin p-GaN Contact Layer by NH3 Pulse-flow Method for High Light-Extraction AlGaN Deep-UV LEDs (2011)
  • Author(s): M.Akiba,Y.Tomita, H.Hirayama, Y.Tsukada, N.Maeda, N.Kamata
  • Organizer: 9^<th> International Conference on Nitride Semiconductors (ICNS-9), F5.2
  • Place of Presentation: Glasgow, UK
  • Year and Date: 2011-07-10
• [Presentation] Growth of Flat p-GaN Contact Layer by Pulse-Flow Method for High Light-Extraction AlGaN Deep-UV LEDs with Al Electrode (2011)
  • Author(s): M. Akiba, Y. Tomita, Y. Tsukada, H. Hirayama, N. Maeda, N. Kamata
  • Organizer: Asian Pacific Workshop on Nitride Semiconductors (APWS2011)
  • Place of Presentation: Toba, Mie, Japan
  • Year and Date: 2011-05-23
• [Presentation] Growth of Flat p-GaN Contact Layer by Pulse-Flow Method for Hig Light-Extraction AlGaN Deep-UV LEDs with Al Electrode (2011)
  • Author(s): M.Akiba, Y.Tomita, Y.Tsukada, H.Hirayama, N.Maeda, N.Kamata
  • Organizer: Asian Pacific Workshop on Nitride Semiconductors (APWS2011)
  • Place of Presentation: Toba, Mie, Japan
  • Year and Date: 2011-05-23
• [Presentation] High-Efficiency Short-Wavelength AlGaN DUV LEDs Realized by Improving Injection Efficiency with MQB (2011)
  • Author(s): H. Hirayama, Y. Tsukada, M. Akiba, Y. Tomita, S. Fujikawa, N. Maeda, N. Kamata
  • Organizer: Asian Pacific Workshop on Nitride Semiconductors (APWS2011)
  • Place of Presentation: Toba, Mie, Japan
  • Year and Date: 2011-05-22
• [Presentation] Optical Characterization with Below-Gap Excitation and Improvements on Deep-UV LEDs (Invited) (2011)
  • Author(s): N. Kamata
  • Organizer: Asia Pacific Light Sources Workshop (APLSW) 2011
  • Place of Presentation: Taipei, Taiwan
  • Year and Date: 2011-04-13
• [Presentation] Optical Characterization with Below Gap Excitation and Improvements on Deep-UV LEDs (2011)
  • Author(s): N.Kamata
  • Organizer: Asia Pacific Light Sources Workshop (APLSW)2011
  • Place of Presentation: Taipei, Taiwan(Invited)
  • Year and Date: 2011-04-13
• [Presentation] 深紫外領域AlGaN系結晶のフォトルミネッセンス評価 (2011)
  • Author(s): 五十嵐航平、石岡亮、塚田悠介、福田武司、本多善太郎、平山秀樹、鎌田憲彦
  • Organizer: 発光型/非発光型ディスプレイ合同研究会
  • Place of Presentation: 高知工科大学
  • Year and Date: 2011-01-28
• [Presentation] Ba_3Si_6O_<12>N_2:Eu^<2+>蛍光体のフォト-及び熱ルミネッセンス評価 (2011)
  • Author(s): 石岡亮、五十嵐航平、福田武司、木島直人、鎌田憲彦
  • Organizer: 発光型/非発光型ディスプレイ合同研究会
  • Place of Presentation: 高知工科大学
  • Year and Date: 2011-01-28
• [Presentation] Energy distribution of below-gap states in InGaN quantum wells revealed by two-wavelength excited photoluminescence (2010)
  • Author(s): N. Kamata, T. Yamaguchi, T. Fukuda, Y. Arakawa
  • Organizer: Proc. 12th Int. Symp. on the Science and Technology of Light Sources and Int. Conf. on White LEDs and Solid State Lighting (LS-WLED2010)
  • Place of Presentation: Eindhoven, Netherland
  • Year and Date: 2010-07-12
• [Presentation] Energy distribution of below-gap states in InGaN quantum wells revealed by two-wavelength excited photoluminescence (2010)
  • Author(s): N.Kamata, T.Yamaguchi, T.Fukuda, Y.Arakawa
  • Organizer: Proc.12^<th> Int.Symp.on the Science and Technology of Light Sources and the 3^<rd> Int.Conf.on White LEDs and Solid State Lighting (LS-WLED2010), CP020
  • Place of Presentation: Eindhoven, Netherland
  • Year and Date: 2010-07-12
• [Presentation] Progress of AlGaN-based Deep-UV LEDs using High-Quality AlN on Sapphire (2010)
  • Author(s): H. Hirayama, Y. Tsukada, N. Kamata
  • Organizer: 22th Int. Semiconductor Laser Conf.(ISLC2010)
  • Place of Presentation: Kyoto
• [Presentation] Marked Efficiency Enhancement of AlGaN-based Deep-UV LEDs using Multiquantum-Barrier (2010)
  • Author(s): Y. Tsukada, H. Hirayama, N. Kamata
  • Organizer: 22th Int. Semiconductor Laser Conf.(ISLC2010)
  • Place of Presentation: Kyoto
• [Presentation] Efficiency Enhancement in AlGaN Deep-UV LEDs using High-Reflectivity Al-based p-type Electrode(IWN2010ベストポスター賞) (2010)
  • Author(s): M. Akiba, H. Hirayama, Y. Tsukada, N. Maeda, N. Kamata
  • Organizer: Int. Workshop on Nitride Semiconductors (IWN2010)
  • Place of Presentation: Tampa, Florida, USA
• [Presentation] High-Power Short-Wavelength AlGaN Deep-UV LEDs Realized by Improving Injection Efficiency (2010)
  • Author(s): H. Hirayama, Y. Tsukada, M. Akiba, N. Maeda, N. Kamata
  • Organizer: Int. Workshop on Nitride Semicond.(IWN2010)
  • Place of Presentation: Tampa, Florida, USA
• [Presentation] Efficiency Enhance-ment in 250 nm-band AlGaN Deep-UV LEDs using Multiquantum-Barrier (2010)
  • Author(s): H. Hirayama, Y. Tsukada, N. Maeda, N. Kamata
  • Organizer: The 3rd Int. Symp. on Growth of III-Nitrides (ISGN-3)
  • Place of Presentation: Montpellier, France
• [Presentation] AlGaN Deep-UV LEDs using Multiquantum-Barrier (2010)
  • Author(s): H. Hirayama, Y. Tsukada, N. Maeda, N. Kamata
  • Organizer: The 8th Int. Symp. on Semiconductor Light Emitting Devices (ISSLED2010)
  • Place of Presentation: Beijing China
• [Presentation] Design of Multiquantum-barrier Electron-Blocking Layer for 230-280 nm-band AlGaN Deep-UV LEDs (2010)
  • Author(s): Y. Tsukada, H. Hirayama, N. Kamata
  • Organizer: The 8th Int. Symp. on Semiconductor Light Emitting Devices (ISSLED2010)
  • Place of Presentation: Beijing China
• [Presentation] 247-262 nm A1GaN Deep-UVLEDs using Multiquantum-Barrier (2010)
  • Author(s): H.Hirayama, Y.Tsukada, N.Maeda, N.Kamata
  • Organizer: The 8^<th> International Symposium on Semiconduc tors Light Emitting Devices (ISSLED2010), E3
  • Place of Presentation: Beijing China
• [Presentation] Design of Multiquantum-barrier Electron-Blocking Layer for 230-280 nm-band AlGaN Deep-UV LEDs (2010)
  • Author(s): Y.Tsukada, H.Hirayama, N.Kamata
  • Organizer: The 8^<th> International Symposium on Semiconduc tors Light Emitting Devices (ISSLED2010),I5
  • Place of Presentation: Beijing China
• [Presentation] Efficiency Enhancement in 250 nm-band AlGaN Deep-UV LEDs using Multiquantum-Barrier (2010)
  • Author(s): H.Hirayama, Y.Tsukada, N.Maeda, N.Kamata
  • Organizer: The 3^<rd> International Symposium on Growth of III-Nitrides (ISGN-3)
  • Place of Presentation: Montpellier, France
• [Presentation] Optimization of Multiquantum-barrier (MQB) Structure of AlGaN Deep-UV LEDs for Realizing High Injection Efficiency (2010)
  • Author(s): Y.Tsukada, H.Hirayama, N.Kamata
  • Organizer: International Workshop on Nitride Semiconductors (IWN2010)
  • Place of Presentation: Tampa, Florida, USA
• [Presentation] High-Power Short-Wavelength AlGaN Deep-UV LEDs Realized by Improving Injection Efficiency (2010)
  • Author(s): H.Hirayama, Y.Tsukada, M.Akiba, N.Maeda, N.Kamata
  • Organizer: International Workshop on Nitride Semiconductors (IWN2010)
  • Place of Presentation: Tampa, Florida, USA
• [Presentation] Progress of AIGaN-based Deep-UV LEDs using High-Quality AIN on Sapphire (2010)
  • Author(s): H.Hirayama, Y.Tsukada, N.Kamata
  • Organizer: 22th International Semiconductor Laser Conference (ISLC2010)
  • Place of Presentation: Kyoto
• [Presentation] Efficiency Enhancement in AlGaN Deep-UV LEDs using High-Refle ctivity Al-based p-type Electrode (IWN2010ベストポスター賞受賞) (2010)
  • Author(s): M.Akiba, H.Hirayama, Y.Tsukada N.Maeda, N.Kamata
  • Organizer: International Workshop on Nitride Semiconductors (IWN2010)
  • Place of Presentation: Tampa, Florida, USA
• [Presentation] Marked Efficiency Enhancement of AlGaN-based Deep-UV LEDs using Multiquantum-Barrier (2010)
  • Author(s): Y.Tsukada, H.Hirayama, N.Kamata
  • Organizer: 22th International Semiconductor Laser Conference (ISLC2010)
  • Place of Presentation: Kyoto
• [Presentation] Siドーピングによる250nm帯InドープAlGaN量子井戸LED高効率化の検討 (2009)
  • Author(s): 塚田悠介、藤川紗千恵、平山秀樹、乗松潤、鎌田憲彦
  • Organizer: 第70回応用物理学会学術講演会、11p-X-2
  • Place of Presentation: 富山大学
  • Year and Date: 2009-09-11
• [Presentation] 240nm AlGaN-LEDのCW1.2mW出力動作 (2009)
  • Author(s): 乗松潤、平山秀樹、塚田悠介、鎌田憲彦
  • Organizer: 第70回応用物理学会学術講演会、11p-X-3
  • Place of Presentation: 富山大学
  • Year and Date: 2009-09-11
• [Presentation] 二波長励起PL法を用いたInGaAs-HEMT結晶の禁制帯内準位の測定-組成依存性- (2009)
  • Author(s): 山口朋彦, 五十嵐航平, 福田武司, 高田朋幸, 板谷太郎, 本多善太郎, 鎌田憲彦
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学
  • Year and Date: 2009-09-10
• [Presentation] 二波長励起PL法を用いたInGaAs-HEMT結晶の禁制帯内準位の測定-組織依存性- (2009)
  • Author(s): 山口朋彦、五十嵐航平、福田武司、高田朋幸、板谷太郎、本多善太郎、鎌田憲彦
  • Organizer: 第70回応用物理学会学術講演会、10a-TC-3
  • Place of Presentation: 富山大学
  • Year and Date: 2009-09-10
• [Presentation] In混入AlGaNの発光およびp型特性と高効率深紫外LEDへの応用 (2009)
  • Author(s): 藤川紗千恵、塚田悠介、乗松潤、高野隆好、野口憲路、椿健治、鎌田憲彦
  • Organizer: 第70回応用物理学会学術講演会、9p-X-7
  • Place of Presentation: 富山大学
  • Year and Date: 2009-09-09
• [Presentation] Optical Detection of Nonradiative Centers in GaN-Based Crystals by Photoluminescence with Below-Gap Excitation (2009)
  • Author(s): N. Kamata, T. Yamaguchi, T. Fukuda, Y. Arakawa
  • Organizer: The 2nd Int. Conf. on White LEDs and Solid State Lighting
  • Place of Presentation: Taipei (Taiwan)
• [Presentation] Optical detection of nonradiative centers in GaN-based crystals by photoluminescence with below-gap excitation (2009)
  • Author(s): 鎌田憲彦, 山口朋彦, 福田武司 Y.Arakawa
  • Organizer: The 2^<nd> Int.Conf.on White LEDs and Solid State Lighting, MA1-6,(査読有)
  • Place of Presentation: Taipei(Taiwan)
• [Presentation] Optical Characterization of Non-Radiative Recombination Centers in InGaAs/AlGaAs Quantum Wells by Below-Gap Excitation
  • Author(s): A. Z. M. Touhidul Islam, K. Hatta, N. Murakoshi, T. Fukuda, T. Takada, T. Itatani, N. Kamata
  • Organizer: Int. Symp. on Science and Technology of Lighting
• [Presentation] Optical Characterization of Non-Radiative Centers and Improvement in Light Extraction Efficiency of Deep UV-LEDs
  • Author(s): N. Kamata, A. Z. M. Touhidul Islam, M. Akiba, K. Igarashi, N. Murakoshi, T. Fukuda, H. Hirayama
  • Place of Presentation: Jpn-China-Korea Conf.
• [Book] 電子材料 (2011)
  • Author(s): 電気学会編集委員会
  • Total Pages: 505
  • Publisher: 朝倉書店
• [Book] 電気データブック (2011)
  • Author(s): 電気学会編集委員会編
  • Total Pages: 505
  • Publisher: 朝倉書店(「電子材料」担当:神谷武志、鎌田憲彦)
• [Book] 出版事業部光エレクトロニクス 基礎編 (2010)
  • Author(s): Amnon Yariv, Pochi Yeh, 多田邦雄, 神谷武志
  • Total Pages: 541
  • Publisher: 丸善(株)
• [Book] 光エレクトロニクス基礎編(2010年8月刊) (2010)
  • Author(s): Amnon Yariv, Pochi Yeh著多田邦雄・神谷武志監訳(鎌田憲彦分担訳)
  • Total Pages: 541
  • Publisher: 丸善(株)出版事業部
• [Remarks]
  • URL: http://www.fms.saitama-u.ac.jp/lab/kamata_l/index.html
• [Patent(Industrial Property Rights)] 光半導体素子及びその製造方法 (2010)
  • Inventor(s): 平山秀樹, 大橋智明, 鎌田憲彦
  • Industrial Property Rights Holder: 平山秀樹, 大橋智明, 鎌田憲彦
  • Acquisition Date: 2010-06-25
• [Patent(Industrial Property Rights)] 顕微フォトルミネッセンス測定装置及び測定方法 (2010)
  • Inventor(s): 鎌田憲彦, 大木孝一
  • Industrial Property Rights Holder: 鎌田憲彦, 大木孝一
  • Acquisition Date: 2010-01-29
• [Patent(Industrial Property Rights)] 顕微フォトルミネッセンス測定装置及び測定方法 (2010)
  • Inventor(s): 鎌田憲彦、大木孝一
  • Industrial Property Rights Holder: 鎌田憲彦、大木孝一
  • Filing Date: 2010-01-29