| Project/Area Number |
21360004
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Saitama University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
HIJIKATA Yasuto 埼玉大学, 大学院・理工学研究科, 准教授 (70322021)
ONABE Kentaro 東京大学, 大学院・新領域創成科学研究科, 教授 (50204227)
KATAYAMA Ryuji 東北大学, 金属材料研究所, 准教授 (40343115)
YAGI Shuhei 埼玉大学, 大学院・理工学研究科, 助教 (30421415)
KUBOYA Shigeyuki 東京大学, 大学院・新領域創成科学研究科, 助教 (70583615)
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| Co-Investigator(Renkei-kenkyūsha) |
AKIYAMA Hidefumi 東京大学, 物性研究所, 准教授 (40251491)
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| Project Period (FY) |
2009 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥18,460,000 (Direct Cost: ¥14,200,000、Indirect Cost: ¥4,260,000)
Fiscal Year 2011: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2010: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2009: ¥11,700,000 (Direct Cost: ¥9,000,000、Indirect Cost: ¥2,700,000)
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| Keywords | 半導体物性 / 光物性 / 応用光学・量子光工学MBE / エピタキシャル / 単一光子 / 結晶工学 / 応用光学・量子光工学 / MBE、エピタキシャル / MBE,エピタキシャル |
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| Research Abstract |
We have fabricated locally doped semiconductors using atomic layer doping to realize the generation of unpolarized single photons with highly reproducible wavelengths, which is essential in the field of quantum information technology, such as quantum cryptography. We have obtained unpolarized single photons by selecting a proper face of the substrate to grow nitrogen atomic layer doped semiconductors. In addition, we have successfully observed biexcition emission from nitrogen atomic layer doped semiconductors, which leads to the generation of entangled photon pairs.
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