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Creation of the modulated facet structures of III-nitride semiconductors and development of the white LEDs with wide and continuous wavelength spectra

Research Project

Project/Area Number 21360007
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionMie University

Principal Investigator

HIRAMATSU Kazumasa  三重大学, 大学院・工学研究科, 教授 (50165205)

Co-Investigator(Kenkyū-buntansha) MIYAKE Hideto  三重大学, 大学院・工学研究科, 准教授 (70209881)
MOTOGAITO Atsushi  三重大学, 大学院・工学研究科, 助教 (00303751)
Project Period (FY) 2009 – 2011
Project Status Completed (Fiscal Year 2011)
Budget Amount *help
¥18,200,000 (Direct Cost: ¥14,000,000、Indirect Cost: ¥4,200,000)
Fiscal Year 2011: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
Fiscal Year 2010: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
Fiscal Year 2009: ¥11,570,000 (Direct Cost: ¥8,900,000、Indirect Cost: ¥2,670,000)
Keywordsエピタキシャル成長 / 選択成長 / 非極性 / 窒化物半導体 / 発光ダイオード / MOVPE / m面 / ファセット制御 / 転位 / 歪み / GaN / ファセット変調構造
Research Abstract

In this study, in order to solve the fluctuation of the light emitting wave length and color rendering properties, the selective area growth on a plane GaN and the fabrication of the flat m-plane GaN are carried out aiming at the development of the white LED with continuous and wide wavelength range. By controlling growth temperature and growth pressure, the facet controlled structures can be fabricated. Also by using this technique, the flat m-plane GaN can be obtained. From these results, The development of the white LED with continuous and wide wavelength range can be realized.

Report

(4 results)
  • 2011 Annual Research Report   Final Research Report ( PDF )
  • 2010 Annual Research Report
  • 2009 Annual Research Report
  • Research Products

    (177 results)

All 2012 2011 2010 2009 Other

All Journal Article (51 results) (of which Peer Reviewed: 49 results) Presentation (118 results) Book (2 results) Remarks (6 results)

  • [Journal Article] Effects of carrier gas and growth temperature on MOVPE growth of AlN2012

    • Author(s)
      R.Miyagawa, S.Yang, H.Miyake, H.Hiramatsu
    • Journal Title

      Phys.Status Solidi

      Volume: vol.9 Issue: 3-4 Pages: 499-502

    • DOI

      10.1002/pssc.201100712

    • Related Report
      2011 Annual Research Report 2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Fabrication of crack-free thick AlN film on a-plane sapphire by low-pressure HVPE2012

    • Author(s)
      Y.Takagi, R.Miyagawa, H.Miyake, K.Hiramatsu
    • Journal Title

      Phys.Status Solidi

      Volume: vol.9 Issue: 3-4 Pages: 576-579

    • DOI

      10.1002/pssc.201100797

    • Related Report
      2011 Annual Research Report 2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Microstructure of AlN Grown on a Nucleation Layer on a Sapphire Substrate2012

    • Author(s)
      R. Miyagawa, S. Yang, H. Miyake, K. Hiramatsu, T. Kuwahara, M. Mitsuhara and N. Kuwano
    • Journal Title

      Applied Physics Express

      Volume: 5

    • NAID

      10030155844

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Orientation dependence of polarized Raman spectroscopy for nonpolar, semi-polar, and polar bulk GaN substratesr2012

    • Author(s)
      B. Ma, D. Jinno, H. Miyake, K. Hiramatsu and H. Harima
    • Journal Title

      Applied Physics Letters

      Volume: 100

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Orientation dependence of polarized Raman spectroscopy for nonpolar, semi-polar, and polar bulk GaN substrates2012

    • Author(s)
      Bei Ma, Daiki Jinno, Hideto Miyake, Kazumasa Hiramatsu, Hiroshi Harima
    • Journal Title

      Applied Physics Letters

      Volume: 100 Issue: 1

    • DOI

      10.1063/1.3674983

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Microstructure of AlN grown on a nucleation layer on sapphire substrate2012

    • Author(s)
      R.Miyagawa, S.Yang, H.Miyake, K.Hiramatsu, T.Kuwahara, M.Mitsuhara, N.Kuwano
    • Journal Title

      Appl.Phys.Express

      Volume: Volime 5 No.2 Issue: 2 Pages: 025501-025501

    • DOI

      10.1143/apex.5.025501

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Strain control of GaN grown on 3C-SiC/Si substrate using AlGaN buffer layer2011

    • Author(s)
      H.Fang, Y.Takaya, S.Ohuchi, H.Miyake, K.Hiramatsu, H.Asamura, K.Kawamura
    • Journal Title

      physica status solidi (c)

      Volume: 9 Issue: 3-4 Pages: 550-553

    • DOI

      10.1002/pssc.201100332

    • Related Report
      2011 Annual Research Report 2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy2011

    • Author(s)
      Y. Shimahara, H. Miyake, K. Hiramatsu, F. Fukuyo, T. Okada, H. Takaoka and Y. Shimahara
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 50

    • NAID

      40019010401

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Stress analysis of a-plane GaN grown on r-plane sapphire substrate2011

    • Author(s)
      B. Ma, H. Miyake, K. Hiramatsu and H. Harima
    • Journal Title

      Physica Status Solidi(c)

      Volume: 8 Pages: 2066-2068

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Control of AlN buffer/sapphire substrate interface for AlN growth2011

    • Author(s)
      R. Miyagawa, S. Yang, H. Miyake and K. Hiramatsu
    • Journal Title

      Physica Status Solidi(c)

      Volume: 8 Pages: 2069-2071

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] HVPE grown thick ALN on trench-patterned substrate2011

    • Author(s)
      K. Fujita, K. Okuura, H. Miyake, K. Hiramatsu and H. Hirayama
    • Journal Title

      Physica Status Solidi(c)

      Volume: 8 Pages: 1483-1486

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN2011

    • Author(s)
      Y. Shimahara, H. Miyake, K. Hiramatsu, F. Fukuyo, T. Okada, H. Takaoka and Y. Shimahara
    • Journal Title

      Applied Physics Express

      Volume: 4

    • NAID

      10028209557

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Raman Scattering Spectroscopy of Residual Stresses in Epitaxial AlN Films2011

    • Author(s)
      S. Yang, R. Miyagawa, H. Miyake, K. Hiramatsu, and H. Harima
    • Journal Title

      Applied Physics Express

      Volume: 4

    • NAID

      10028155120

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN2011

    • Author(s)
      Y.Shimahara, H.Miyake, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, Y.Shimahara
    • Journal Title

      APPLIED PHYSICS EXPRESS

      Volume: 4 Issue: 4 Pages: 042103-042103

    • DOI

      10.1143/apex.4.042103

    • NAID

      10028209557

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] HVPE grown thick ALN on trench-patterned substrate2011

    • Author(s)
      K.Fujita, K.Okuura, H.Miyake, K.Hiramatsu, H.Hirayama
    • Journal Title

      Physica Status Solidi (c)

      Volume: 8 Issue: 5 Pages: 1483-1486

    • DOI

      10.1002/pssc.201001130

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Control of AlN buffer/sapphire substrate interface for AlN growth2011

    • Author(s)
      R.Miyagawa, S.Yang, H.Miyake, K.Hiramatsu
    • Journal Title

      Physica Status Solidi (c)

      Volume: 8 Issue: 7-8 Pages: 2069-2071

    • DOI

      10.1002/pssc.201001186

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Stress analysis of a-plane GaN grown on r-plane sapphire substrates2011

    • Author(s)
      Bei Ma, Hideto Miyake, Kazumasa Hiramatsu, Hiroshi Harima
    • Journal Title

      physica status solidi (c)

      Volume: 8 Issue: 7-8 Pages: 2066-2068

    • DOI

      10.1002/pssc.201001166

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy2011

    • Author(s)
      Y.Shimahara, H.Miyake, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, Y.Shimahara
    • Journal Title

      JAPANESE JOURNAL OF APPLIED PHYSICS

      Volume: 50 Issue: 9R Pages: 095502-095502

    • DOI

      10.1143/jjap.50.095502

    • NAID

      40019010401

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Raman Scattering Spectroscopy of Residual Stresses in Epitaxial AlN Films2011

    • Author(s)
      S.Yang, R.Miyagawa, H.Miyake, K.Hiramatsu, H.Harima
    • Journal Title

      Applied Physics Express

      Volume: 4

    • NAID

      10028155120

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Facet control in selective area growth(SAG) of a-plane GaN by MOVPE2010

    • Author(s)
      B. Ma, R. Miyagawa, H. Miyake and K. Hiramatsu
    • Journal Title

      Material Research Society Symposium Proceedings

      Volume: 1201

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Growth of high quality c-plane AlN on a-plane sapphire2010

    • Author(s)
      R. Miyagawa, J. Wu, H. Miyake and K. Hiramatsu
    • Journal Title

      Material Research Society Symposium Proceedings

      Volume: 1201

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Study of High-Quality and Crack-Free GaN Growth on 3C-SiC/Separation by Implanted Oxygen2010

    • Author(s)
      M. Narukawa, H. Asamura, K. Kawamura, H. Miyake and K. Hiramatsu
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 49

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Effects of the AlN Interlayer on the Distribution and Mobility of Two-Dimensional Electron Gas in AlGaN/AlN/GaN Heterojunctions2010

    • Author(s)
      W. Hu, B. Ma, D. Li, R. Miyagawa, H. Miyake, and K. Hiramatsu
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 49

    • NAID

      40017033737

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Study of High-Quality and Crack-Free GaN Growth on 3C-SiC/Separation by Implanted Oxygen2010

    • Author(s)
      M.Narukawa, H.Asamura, K.Kawamura, H.Miyake, K.Hiramatsu
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 49

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Growth of high quality c-plane AlN on a-plane sapphire2010

    • Author(s)
      R.Miyagawa, J.Wu, H.Miyake, K.Hiramatsu
    • Journal Title

      Material Research Society Symposium Proceedings

      Volume: 1201

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Facet control in selective area growth (SAG) of a-plane GaN by MOVPE2010

    • Author(s)
      B.Ma, R.Miyagawa, H.Miyake, K.Hiramatsu
    • Journal Title

      Material Research Society Symposium Proceedings

      Volume: 1201

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effects of the AlN Interlayer on the Distribution and Mobility of Two-Dimensional Electron Gas in AlGaN/AlN/GaN Heterojunctions2010

    • Author(s)
      W.Hu, B.Ma, D.Li, R.Miyagawa, H.Miyake, K.Hiramatsu
    • Journal Title

      Japanese Journal of Applied Physics 49

    • NAID

      40017033737

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Influence of off-cut angle of r-plane sapphire on the crystal quality of nonpolar a-plane AlN by LP-HVPE2009

    • Author(s)
      J. Wu, K. Okuura, K. Fujita, K. Okumura, H. Miyake, and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth

      Volume: 311 Pages: 4473-4477

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Effects of Substrate Plane on the Growth of High Quality AlN by Hydride Vapor Phase Epitaxy2009

    • Author(s)
      J. Wu, K. Okuura, H. Miyake, and K. Hiramatsu
    • Journal Title

      Applied Physics Express

      Volume: 2

    • NAID

      10027011951

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Nitridating r-plane sapphire to improve crystal qualities and surface morphologies of a-plane GaN grown by metalorganic vapor phase epitaxy2009

    • Author(s)
      B. Ma, W. Hu, H. Miyake and K. Hiramatsu
    • Journal Title

      Applied Physics Letters

      Volume: 95

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Effects of initial stages on the crystal quality of nonpolar a-plane AlN on r-plane sapphire by low-pressure HVPE2009

    • Author(s)
      J. Wu, Y. Katagiri, K. Okuura, D. Li, H. Miyake and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth

      Volume: 311 Pages: 3801-3805

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Effects of initial conditions and growth temperature on the properties of nonpolar a-plane AlN grown by LP-HVPE2009

    • Author(s)
      J. Wu, Y. Katagiri, K. Okuura, D. Li, H. Miyake and K. Hiramatsu
    • Journal Title

      Physica Status Solidi(c)

      Volume: 6

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] In-plane electric field induced by polarization and lateral photovoltalic effect in a-plane GaN2009

    • Author(s)
      W. Hu, B. Ma, D. Li, H. Miyake and K. Hiramatsu
    • Journal Title

      Applied Physics Letters

      Volume: 94

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Growth of undoped and Zn-doped GaN nanowires2009

    • Author(s)
      M. Narukawa, S. Koide, H. Miyake and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth

      Volume: 311 Pages: 2970-2972

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Photoluminesence study of Si-doped a-plane GaN grown by MOVPE2009

    • Author(s)
      D. Li, B. Ma, R. Miyagawa, M. Narukawa, H. Miyake and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth

      Volume: 311 Pages: 2906-2909

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Optical properties of MOVPE-grown a-plane GaN and AlGaN2009

    • Author(s)
      M. Narukawa, R. Miyagawa, B. Ma, H. Miyake and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth

      Volume: 311 Pages: 2903-2905

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Structural and electrical properties of Si-doped a-plane GaN grown on r-plane sapphire by MOVPE2009

    • Author(s)
      B. Ma, R. Miyagawa, W. Hu, D. Li, H. Miyake and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth

      Volume: 311 Pages: 2899-2902

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Low-pressure HVPE growth of crack-free thick AlN on a trench-patterned AlN template2009

    • Author(s)
      Y. Katagiri, S. Kishino, K. Okuura, H. Miyake and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth

      Volume: 311 Pages: 2831-2833

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Low-pressure HVPE growth of crack-free thick AlN on a trench-patterned AlN template2009

    • Author(s)
      Y.Katagiri, S.Kishino, K.Okuura, H.Miyake, K.Hiramatsu
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2831-2833

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Structural and electrical properties of Si-doped a-plane GaN grown on r-plane sapphire by MOVPE2009

    • Author(s)
      B.Ma, R.Miyagawa, W.Hu, D.Li, H.Miyake, K.Hiramatsu
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2899-2902

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Optical properties of MOVPE-grown a-plane GaN and AlGaN2009

    • Author(s)
      M.Narukawa, R.Miyagawa, B.Ma, H.Miyake, K.Hiramatsu
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2903-2905

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Photoluminesence study of Si-doped a-plane GaN grown by MOVPE2009

    • Author(s)
      D.Li, B.Ma, R.Miyagawa, M.Narukawa, H.Miyake, K.Hiramatsu
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2906-2909

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Growth of undoped and Zn-doped GaN nanowires2009

    • Author(s)
      M.Narukawa, S.Koide, H.Miyake, K.Hiramatsu
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2970-2972

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] In-plane electric field induced by polarization and lateral photovoltalic effect in a-plane GaN2009

    • Author(s)
      W.Hu, B.Ma, D.Li, H.Miyake, K.Hiramatsu
    • Journal Title

      Applied Physics Letters 94

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effects of initial conditions and growth temperature on the properties of nonpolar a-plane AlN grown by LP-HVPE2009

    • Author(s)
      J.Wu, Y.Katagiri, K.Okuura, D.Li, H.Miyake, K.Hiramatsu
    • Journal Title

      Physica Status Solidi (c) 6

      Pages: 5478-5481

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effects of initial stages on the crystal quality of nonpolar a-plane AlN on r-plane sapphire by low-pressure HVPE2009

    • Author(s)
      J.Wu, Y.Katagiri, K.Okuura, D.Li, H.Miyake, K.Hiramatsu
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 3801-3805

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Nitridating r-plane sapphire to improve crystal qualities and surface morphologies of a-plane GaN grown by metalorganic vapor phase epitaxy2009

    • Author(s)
      B.Ma, W.Hu, H.Miyake, K.Hiramatsu
    • Journal Title

      Applied Physics Letters 95

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effects of Substrate Plane on the Growth of High Quality AlN by Hydride Vapor Phase Epitaxy2009

    • Author(s)
      J.Wu, K.Okuura, H.Miyake, K.Hiramatsu
    • Journal Title

      Applied Physics Express 2

    • NAID

      10027011951

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Influence ofoff-cutangleof r-plane sapphireonthecrystalqualityof nonpolar a-plane AlNbyLP-HVPE2009

    • Author(s)
      J.Wu, K.Okuura, K.Fujita, K.Okumura, H.Miyake, K.Hiramatsu
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 4473-4477

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article]2009

    • Author(s)
      平松和政, 元垣内敦司, 他4名
    • Journal Title

      新インターユニバーシティ 半導体工学((株) オーム社)

      Pages: 1-46

    • Related Report
      2009 Annual Research Report
  • [Journal Article]2009

    • Author(s)
      三宅秀人, 宮川鈴衣奈, 他35名
    • Journal Title

      窒化物基板および講師整合基板の成長とデバイス特性((株) シーエムシー出版)

      Pages: 119-127

    • Related Report
      2009 Annual Research Report
  • [Presentation] 非極性自立GaN結晶のラマン散乱分光による評価2012

    • Author(s)
      馬ベイ, 神野大樹, 三宅秀人, 平松和政, 播磨弘
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-18
    • Related Report
      2011 Annual Research Report
  • [Presentation] 3C-SiC/Si基板上GaN成長におけるAlN中間層の効果2012

    • Author(s)
      高谷佳史, 方浩, 三宅秀人, 平松和政, 浅村英俊, 川村啓介, 奥秀彦
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-17
    • Related Report
      2011 Annual Research Report
  • [Presentation] MOVPE法によるm面GaN自立基板上へのGaN選択成長2012

    • Author(s)
      神野大樹, Bei Ma, 三宅秀人, 平松和政
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-17
    • Related Report
      2011 Annual Research Report
  • [Presentation] HVPE法AlN成長におけるボイドを用いた歪み・転位低減技術2012

    • Author(s)
      三宅秀人, 平松和政
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス(招待講演)
    • Year and Date
      2012-03-16
    • Related Report
      2011 Annual Research Report
  • [Presentation] a面・n面サファイア上への減圧HVPE法によるAlN成長2012

    • Author(s)
      強力尚紀, 高木雄太, 三宅秀人, 平松和政, 江龍修
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-16
    • Related Report
      2011 Annual Research Report
  • [Presentation] 溝加工AlN基板上へのAlNのMOVPE成長におけるSiドーピング効果2012

    • Author(s)
      西尾剛, 楊士波, 三宅秀人, 平松和政
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-16
    • Related Report
      2011 Annual Research Report
  • [Presentation] Si-doped AlGaN量子井戸構造の減圧MOVPE法による成長と発光特性2012

    • Author(s)
      落合俊介, 福世文嗣, 三宅秀人, 平松和政, 吉田治正, 小林祐二
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-16
    • Related Report
      2011 Annual Research Report
  • [Presentation] MOVPE法によるAlN成長におけるサファイア界面制御とTEM観察2012

    • Author(s)
      宮川鈴衣奈, 楊士波, 三宅秀人, 平松和政, 桑原崇彰, 光原昌寿, 桑野範之
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-16
    • Related Report
      2011 Annual Research Report
  • [Presentation] HVPE法AlN成長におけるボイドを用いた歪み・転位低減技術2012

    • Author(s)
      三宅秀人,平松和政
    • Organizer
      第59回応用物理学関係連合講演会(招待講演)
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-15
    • Related Report
      2011 Final Research Report
  • [Presentation] 窒化物半導体における特異構造の理解と制御2012

    • Author(s)
      平松和政
    • Organizer
      第59回応用物理学関係連合講演会(招待講演)
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-15
    • Related Report
      2011 Final Research Report
  • [Presentation] 窒化物半導体における特異構造の理解と制御2012

    • Author(s)
      平松和政
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス(招待講演)
    • Year and Date
      2012-03-15
    • Related Report
      2011 Annual Research Report
  • [Presentation] サファイア基板上へのAlNのMOVPE成長における中間層制御2011

    • Author(s)
      宮川鈴衣奈、楊士波、三宅秀人、平松和政、桑原崇彰、桑野範之、光原昌寿
    • Organizer
      電子情報通信学会電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      京都大学桂キャンパス桂ホール
    • Year and Date
      2011-11-17
    • Related Report
      2011 Annual Research Report
  • [Presentation] エッチピット法によるAlNエピタキシャル膜中の貫通転位の評価2011

    • Author(s)
      野村拓也、三宅秀人、平松和政、龍祐樹、桑原崇彰、桑野範之
    • Organizer
      電子情報通信学会電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      京都大学桂キャンパス桂ホール
    • Year and Date
      2011-11-17
    • Related Report
      2011 Annual Research Report
  • [Presentation] 溝加工AlN上でのMOVPE法におけるAlN成長速度の異方性2011

    • Author(s)
      楊士波, 宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学小白川キャンパス
    • Year and Date
      2011-08-31
    • Related Report
      2011 Annual Research Report
  • [Presentation] Si-doped AlGaN多重量子井戸の作製と発光特性2011

    • Author(s)
      落合俊介, 島原佑樹, 三宅秀人, 平松和政, 福世文嗣, 岡田知幸, 高岡秀嗣, 吉田治正
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学小白川キャンパス
    • Year and Date
      2011-08-31
    • Related Report
      2011 Annual Research Report
  • [Presentation] 非極性自立基板を用いたGaNホモエピタキシャル成長2011

    • Author(s)
      神野大樹, Bei Ma, 三宅秀人, 平松和政
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学小白川キャンパス
    • Year and Date
      2011-08-30
    • Related Report
      2011 Annual Research Report
  • [Presentation] 減圧HVPE法を用いたAlN成長における転位密度の低減2011

    • Author(s)
      野村拓也, 藤田浩平, 三宅秀人, 平松和政, 乗松潤, 平山秀樹
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学小白川キャンパス
    • Year and Date
      2011-08-30
    • Related Report
      2011 Annual Research Report
  • [Presentation] 減圧HVPE法による周期溝加工AlN/a面Sapphire上への厚膜AIN成長2011

    • Author(s)
      高木雄太, 宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学小白川キャンパス
    • Year and Date
      2011-08-30
    • Related Report
      2011 Annual Research Report
  • [Presentation] AlNのMOVPE成長におけるキャリアガスの影響2011

    • Author(s)
      宮川鈴衣奈, 楊士波, 三宅秀人, 平松和政
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学小白川キャンパス
    • Year and Date
      2011-08-30
    • Related Report
      2011 Annual Research Report
  • [Presentation] Fabrication of crack-free thick AlN film on a-plane sapphire by lowpressure HVPE2011

    • Author(s)
      Takagi, Y Miyagawa, R Miyake, H Hiramatsu, K
    • Organizer
      The 9th International Conference on Nitride Semiconductors (ICNS-9)
    • Place of Presentation
      Scottish Exhibition and Conference Center(グラスゴー・イギリス)
    • Year and Date
      2011-07-14
    • Related Report
      2011 Annual Research Report
  • [Presentation] Influence of carrier gas and growth temperature on MOVPE growth of AlN2011

    • Author(s)
      Miyagawa, R; Yang, S; Miyake, H; Hiramatsu, K
    • Organizer
      The 9th International Conference on Nitride Semiconductors (ICNS-9)
    • Place of Presentation
      Scottish Exhibition and Conference Center(グラスゴー・イギリス)
    • Year and Date
      2011-07-11
    • Related Report
      2011 Annual Research Report
  • [Presentation] Raman analysis of HVPE-grown free-standing gallium nitride with various orientations2011

    • Author(s)
      Ma, B; Jinno, D; Miyake, H; Hiramatsu, K; Harima, H
    • Organizer
      The 9th International Conference on Nitride Semiconductors (ICNS-9)
    • Place of Presentation
      Scottish Exhibition and Conference Center(グラスゴー・イギリス)
    • Year and Date
      2011-07-11
    • Related Report
      2011 Annual Research Report
  • [Presentation] Strain control of GaN grown on 3C-SiC/Si substrate using AlGaN buffer layer2011

    • Author(s)
      Fang, H; Takaya, Y; Ohuchi, S; Miyake, H; Hiramatsu, K; Asamura, H; Kawamura, K
    • Organizer
      The 9th International Conference on Nitride Semiconductors (ICNS-9)
    • Place of Presentation
      Scottish Exhibition and Conference Center(グラスゴー・イギリス)
    • Year and Date
      2011-07-11
    • Related Report
      2011 Annual Research Report
  • [Presentation] Effects of carrier gas and temperature on MOVPE growth of AlN2011

    • Author(s)
      R.Miyagawa, S.Yang, H.Miyake, K.Hiramatsu
    • Organizer
      第30回電子材料シンポジウム(EMS-30)
    • Place of Presentation
      ラフォーレ琵琶湖
    • Year and Date
      2011-06-30
    • Related Report
      2011 Annual Research Report
  • [Presentation] Fabrication of crack-free thick AlN film on a-plane sapphire by low-pressure HVPE2011

    • Author(s)
      Y.Takagi, R.Miyagawa, H.Miyake, K.Hiramatsu
    • Organizer
      第30回電子材料シンポジウム(EMS-30)
    • Place of Presentation
      ラフォーレ琵琶湖
    • Year and Date
      2011-06-30
    • Related Report
      2011 Annual Research Report
  • [Presentation] Fabrication and emission properties of Si-doped AlGaN multiple quantum wells2011

    • Author(s)
      S.Ochiai, Y.Shimahara, H.Miyake, K.Hiramatsu, F.Fukuyo, T.Okada
    • Organizer
      第30回電子材料シンポジウム(EMS-30)
    • Place of Presentation
      ラフォーレ琵琶湖
    • Year and Date
      2011-06-30
    • Related Report
      2011 Annual Research Report
  • [Presentation] 3C-SiC/Si基板上AlGaN-buffer層を用いたGaN成長の歪み制御2011

    • Author(s)
      高谷佳史、大内澄人、方浩、三宅秀人、平松和政、浅村英俊、川村啓介
    • Organizer
      第3回窒化物半導体結晶成長講演会
    • Place of Presentation
      九州大学筑紫キャンパス
    • Year and Date
      2011-06-18
    • Related Report
      2011 Annual Research Report
  • [Presentation] 無極性・半極性自立基板を用いたGaNホモエピタキシャル成長2011

    • Author(s)
      神野大樹、馬ベイ、方浩、三宅秀人、平松和政
    • Organizer
      第3回窒化物半導体結晶成長講演会
    • Place of Presentation
      九州大学筑紫キャンパス
    • Year and Date
      2011-06-18
    • Related Report
      2011 Annual Research Report
  • [Presentation] 深い溝加工の6H-SiC基板を用いた減圧HVPE法によるAlN成長2011

    • Author(s)
      強力尚紀、三宅秀人、平松和政
    • Organizer
      第3回窒化物半導体結晶成長講演会
    • Place of Presentation
      九州大学筑紫キャンパス
    • Year and Date
      2011-06-18
    • Related Report
      2011 Annual Research Report
  • [Presentation] 自立GaN結晶を用いたラマン散乱分光の面方位依存性2011

    • Author(s)
      馬ベイ、神野大樹、三宅秀人、平松和政、播磨弘
    • Organizer
      第3回窒化物半導体結晶成長講演会
    • Place of Presentation
      九州大学筑紫キャンパス
    • Year and Date
      2011-06-18
    • Related Report
      2011 Annual Research Report
  • [Presentation] 250 nm emission from Si-doped AlGaN and its quantum wells upon excitation by electron beam2011

    • Author(s)
      H.Miyake, Y.Shimahara, S.Ochiai, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida, T.Fujita, T.Kuwahara, N.Kuwano
    • Organizer
      The 5th Asia-pacific Workshop on Widegap Semiconductors (APWS2011)
    • Place of Presentation
      鳥羽国際ホテル
    • Year and Date
      2011-05-26
    • Related Report
      2011 Annual Research Report
  • [Presentation] Raman scattering spectroscopy of residual stresses in epitaxial AlN films2011

    • Author(s)
      S.Yang, R.Miyagawa, H.Miyake, K.Hiramatsu, H.Harima
    • Organizer
      The 5th Asia-pacific Workshop on Widegap Semiconductors (APWS2011)
    • Place of Presentation
      鳥羽国際ホテル
    • Year and Date
      2011-05-23
    • Related Report
      2011 Annual Research Report
  • [Presentation] Study on interface for AlN growth on sapphire substrate2011

    • Author(s)
      R.Miyagawa, S.Yang, H.Miyake, K.Hiramatsu
    • Organizer
      The 5th Asia-pacific Workshop on Widegap Semiconductors (APWS2011)
    • Place of Presentation
      鳥羽国際ホテル
    • Year and Date
      2011-05-23
    • Related Report
      2011 Annual Research Report
  • [Presentation] エピタキシャルAlN膜のラマン散乱分光による評価2011

    • Author(s)
      楊士波、宮川鈴衣奈、三宅秀人、平松和政、播磨弘
    • Organizer
      電子情報通信学会電子デバイス、電子部品・材料、シリコン材料・デバイス研究会
    • Place of Presentation
      名古屋大学東山キャンパスベンチャービジネスラボラトリー
    • Year and Date
      2011-05-19
    • Related Report
      2011 Annual Research Report
  • [Presentation] MOVPE法GaN成長におけるボイド形成による基板の反り制御2011

    • Author(s)
      大内澄人、三宅秀人、平松和政
    • Organizer
      電子情報通信学会 電子デバイス、電子部品・材料、シリコン材料・デバイス研究会
    • Place of Presentation
      名古屋大学東山キャンパスベンチャービジネスラボラトリー
    • Year and Date
      2011-05-19
    • Related Report
      2011 Annual Research Report
  • [Presentation] a面Sapphire上周期溝加工c面AlNを基板に用いたHVPE法によるAlN厚膜成長2011

    • Author(s)
      高木雄太、三宅秀人、平松和政
    • Organizer
      電子情報通信学会 電子デバイス、電子部品・材料、シリコン材料・デバイス研究会
    • Place of Presentation
      名古屋大学東山キャンパスベンチャービジネスラボラトリー
    • Year and Date
      2011-05-19
    • Related Report
      2011 Annual Research Report
  • [Presentation] Ultraviolet light source using MOVPE grown Si-doped AlGaN on AlN/sapphire2011

    • Author(s)
      H. Miyake, Y. Shimahara, S. Ochiai, K. Hiramatsu, F. Fukuyo, T. Okada, H. Takaoka, H. Yoshida
    • Organizer
      E-MRS Spring Meeting(招待講演)
    • Place of Presentation
      ニース(フランス)
    • Year and Date
      2011-05-11
    • Related Report
      2011 Final Research Report
  • [Presentation] Ultraviolet light source using MOVPE grown Si-doped AlGaN on AlN/sapphire2011

    • Author(s)
      H.Miyake, Y.Shimahara, S.Ochiai, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      E-MRS Spring Meeting
    • Place of Presentation
      Congress Center(ニース、フランス)(招待講演)
    • Year and Date
      2011-05-11
    • Related Report
      2011 Annual Research Report
  • [Presentation] Homo-epitaxial growth of thick AlN film by HVPE2011

    • Author(s)
      H.Miyake
    • Organizer
      7th International Workshop on Bulk Nitride Semiconductors (IWBNS-VII 2011)
    • Place of Presentation
      高野山大学
    • Year and Date
      2011-03-16
    • Related Report
      2010 Annual Research Report
  • [Presentation] PETフィルム上バイナリ型回折凸レンズにおける緑色光の配光制御2011

    • Author(s)
      元垣内敦司, 荒川和哉, 三宅秀人, 平松和政
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Related Report
      2010 Annual Research Report
  • [Presentation] サファイア上へのAlN成長における界面層の評価(2)2011

    • Author(s)
      宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Related Report
      2010 Annual Research Report
  • [Presentation] 減圧HVPE法によるAlNホモエピタキシャル成長2011

    • Author(s)
      野村拓也, 奥村健太, 三宅秀人, 平松和政, 江龍修, 福山博之
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Related Report
      2010 Annual Research Report
  • [Presentation] 周期溝加工c面AlN/a面Sapphire上への減圧HVPE法によるAlN成長2011

    • Author(s)
      高木雄太, 三宅秀人, 平松和政
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Related Report
      2010 Annual Research Report
  • [Presentation] Si-doped AlGaN超格子の作製と発光評価2011

    • Author(s)
      三宅秀人, 島原佑樹, 落合俊介, 平松和政, 福世文嗣, 岡田知幸, 高岡秀嗣, 吉田治正, 桑野範之
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Related Report
      2010 Annual Research Report
  • [Presentation] MOVPE法による選択成長を用いたGaN基板の反り制御2011

    • Author(s)
      大内澄人, 直井弘之, 三宅秀人, 平松和政
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Related Report
      2010 Annual Research Report
  • [Presentation] Deep-Ultraviolet Emission Si-doped AlGaN Excited by Electron Beam2011

    • Author(s)
      H. Miyake, Y. Shimahara, S. Ochiai, K. Hiramatsu, F. Fukuyo, T. Okada, H. Takaoka and H. Yoshida
    • Organizer
      3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials(ISPlasma 2011)
    • Place of Presentation
      名古屋工業大学
    • Year and Date
      2011-03-07
    • Related Report
      2011 Final Research Report
  • [Presentation] Deep-Ultraviolet Emission Si-doped AlGaN Excited by Electron Beam2011

    • Author(s)
      H.Miyake, Y.Shimahara, S.Ochiai, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2011)
    • Place of Presentation
      名古屋工業大学
    • Year and Date
      2011-03-07
    • Related Report
      2010 Annual Research Report
  • [Presentation] Raman scattering spectroscopy for epitaxial AlN films2011

    • Author(s)
      S.Yang, R.Miyagawa, H.Miyake, K.Hiramatsu, H.Harima
    • Organizer
      SPIE Photonic West
    • Place of Presentation
      アメリカ サンフランシスコ
    • Year and Date
      2011-01-26
    • Related Report
      2010 Annual Research Report
  • [Presentation] AlN homo-epitaxial growth on sublimation-AlN substrate by low-pressure HVPE2011

    • Author(s)
      T.Nomura, K.Okumura, H.Miyake, K.Hiramatsu, O.Eryuu, Y.Yamada
    • Organizer
      SPIE Photonic West
    • Place of Presentation
      アメリカ サンフランシスコ
    • Year and Date
      2011-01-26
    • Related Report
      2010 Annual Research Report
  • [Presentation] r面サファイア上a面GaN成長における反りのその場観察2010

    • Author(s)
      馬ベイ, 三宅秀人, 平松和政, 播磨弘
    • Organizer
      応用物理学会結晶工学分科会 年末講演会
    • Place of Presentation
      学習院創立百周年記念会館
    • Year and Date
      2010-12-17
    • Related Report
      2010 Annual Research Report
  • [Presentation] サファイア基板上AlN成長における界面層評価2010

    • Author(s)
      宮川鈴衣奈, 楊士波, 三宅秀人, 平松和政
    • Organizer
      応用物理学会結晶工学分科会 年末講演会
    • Place of Presentation
      学習院創立百周年記念会館
    • Year and Date
      2010-12-17
    • Related Report
      2010 Annual Research Report
  • [Presentation] 選択成長を用いて形成したボイドによるGaN膜の反り制御2010

    • Author(s)
      大内澄人, 三宅秀人, 平松和政
    • Organizer
      応用物理学会結晶工学分科会 年末講演会
    • Place of Presentation
      学習院創立百周年記念会館
    • Year and Date
      2010-12-17
    • Related Report
      2010 Annual Research Report
  • [Presentation] MOVPE growth of Si-doped AlGaN and its application for ultra-violet light source2010

    • Author(s)
      H.Miyake, Y.Shimahara, K.Hiramatsu
    • Organizer
      10th Akasaki Research Center Symposium
    • Place of Presentation
      ルブラ王山(名古屋市)(招待講演)
    • Year and Date
      2010-11-26
    • Related Report
      2010 Annual Research Report
  • [Presentation] 減圧HVPE法による周期溝加工AlN/サファイア上へのELO-AlN2010

    • Author(s)
      藤田浩平, 三宅秀人, 平松和政, 乗松潤, 平山秀樹
    • Organizer
      電子情報通信学会研究会 電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      大阪大学
    • Year and Date
      2010-11-11
    • Related Report
      2010 Annual Research Report
  • [Presentation] 電子線励起法による深紫外光源用Si-doped AlGaNの作製と特性評価2010

    • Author(s)
      島原佑樹, 三宅秀人, 平松和政, 福世文嗣, 岡田知幸, 高岡秀嗣, 吉田治正
    • Organizer
      電子情報通信学会研究会 電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      大阪大学
    • Year and Date
      2010-11-11
    • Related Report
      2010 Annual Research Report
  • [Presentation] SiCを基板に用いた減圧HVPE法によるAlN成長2010

    • Author(s)
      奥村建太, 野村拓也, 三宅秀人, 平松和政, 江龍修
    • Organizer
      電子情報通信学会研究会 電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      大阪大学
    • Year and Date
      2010-11-11
    • Related Report
      2010 Annual Research Report
  • [Presentation] 短焦点距離バイナリ型回折レンズにおける回折効率の周期内凸部占有率依存性2010

    • Author(s)
      荒川和哉, 元垣内敦司, 三宅秀人, 平松和政
    • Organizer
      日本光学会年次学術講演会
    • Place of Presentation
      中央大学 駿河台記念館
    • Year and Date
      2010-11-09
    • Related Report
      2010 Annual Research Report
  • [Presentation] Fabrication and characterization of binary diffractive lens with the 100μm-order-focal length2010

    • Author(s)
      A. Motogaito, K. Arakawa, Y. Nakayama, H. Miyake and K. Hiramatsu
    • Organizer
      16th Microoptics Conference(MOC2010)
    • Place of Presentation
      新竹(台湾)
    • Year and Date
      2010-11-02
    • Related Report
      2011 Final Research Report
  • [Presentation] Fabrication and characterization of binary diffractive lens with the 100μm-order-focal length2010

    • Author(s)
      A.Motogaito, K.Arakawa, Y.Nakayama, H.Miyake, K.Hiramatsu
    • Organizer
      16^<th> Microoptics Conference (MOC2010)
    • Place of Presentation
      台湾 新竹
    • Year and Date
      2010-11-02
    • Related Report
      2010 Annual Research Report
  • [Presentation] Study on Light Control and LED Lighting Application2010

    • Author(s)
      K. Hiramatsu and A. Motogaito
    • Organizer
      Korea-Japan Workshop on Semiconductor for Energy Saving and Harvesting(招待講演)
    • Place of Presentation
      ソウル(韓国)
    • Year and Date
      2010-10-11
    • Related Report
      2011 Final Research Report
  • [Presentation] Fabrication Deep-violet Light Source using MOVPE-grown Si-doped AlGaN2010

    • Author(s)
      H. Miyake, Y. Shimahara, K. Hiramatsu, F. Fukuyo, T. Okada, H. Takaoka and H. Yoshida
    • Organizer
      Korea-Japan Workshop on Semiconductor for Energy Saving and Harvesting(招待講演)
    • Place of Presentation
      ソウル(韓国)
    • Year and Date
      2010-10-11
    • Related Report
      2011 Final Research Report
  • [Presentation] Fabrication Deep-violet Light Source using MOVPE-grown Si-doped AlGaN2010

    • Author(s)
      H.Miyake, Y.Shimahara, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      Korea-Japan Workshop on Semiconductor for Energy Saving and Harvesting
    • Place of Presentation
      韓国 ソウル(招待講演)
    • Year and Date
      2010-10-11
    • Related Report
      2010 Annual Research Report
  • [Presentation] Study on Light Control and LED Lighting Application2010

    • Author(s)
      K.Hiramatsu, A.Motogaito
    • Organizer
      Korea-Japan Workshop on Semiconductor for Energy Saving and Harvesting
    • Place of Presentation
      韓国 ソウル(招待講演)
    • Year and Date
      2010-10-11
    • Related Report
      2010 Annual Research Report
  • [Presentation] Stress Analysis of a-plane GaN Grown on r-plane Sapphire Substrates2010

    • Author(s)
      B.Ma, J.Zhang, H.Miyake, K.Hiramatsu, H.Harima
    • Organizer
      International Workshop on Nitride Semiconductors 2010 (IWN-2010)
    • Place of Presentation
      アメリカ タンパ
    • Year and Date
      2010-09-20
    • Related Report
      2010 Annual Research Report
  • [Presentation] Interface Control of AlN Buffer and Sapphire Substrate for AlN Growth2010

    • Author(s)
      R.Miyagawa, S.Yang, H.Miyake, K.Hiramatsu
    • Organizer
      International Workshop on Nitride Semiconductors 2010 (IWN-2010)
    • Place of Presentation
      アメリカ タンパ
    • Year and Date
      2010-09-20
    • Related Report
      2010 Annual Research Report
  • [Presentation] サファイア上へのAlN成長における界面層の評価2010

    • Author(s)
      宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-16
    • Related Report
      2010 Annual Research Report
  • [Presentation] 選択成長により形成されたボイドを利用したGaN膜の反り制御2010

    • Author(s)
      大内澄人, 三宅秀人, 平松和政
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Related Report
      2010 Annual Research Report
  • [Presentation] r面サファイア上a面GaNの反り異方性2010

    • Author(s)
      馬ベイ, 張紀才, 三宅秀人, 平松和政, 播磨弘
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Related Report
      2010 Annual Research Report
  • [Presentation] 電子線励起による深紫外光源用Si-doped AlGaNの作製2010

    • Author(s)
      島原佑樹, 三宅秀人, 平松和政, 福世文嗣, 岡田知幸, 高岡秀嗣, 吉田治正
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Related Report
      2010 Annual Research Report
  • [Presentation] エピタキシャルAlN膜のラマン散乱分光による評価2010

    • Author(s)
      楊士波, 宮川鈴衣奈, 張紀才, 三宅秀人, 平松和政, 播磨弘
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Related Report
      2010 Annual Research Report
  • [Presentation] 昇華法AlN基板上への減圧HVPE法によるAlNホモエピタキシャル成長2010

    • Author(s)
      野村拓也, 奥村建太, 三宅秀人, 平松和政, 江龍修, 山田陽一
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] 減圧HVPE法による周期溝加工AlN/サファイア上へのAlN横方向成長2010

    • Author(s)
      藤田浩平, 三宅秀人, 平松和政, 乗松潤, 平山秀樹
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] Structural study of selective-area grown a-plane GaN2010

    • Author(s)
      B.Ma, H.Miyake, K.Hiramatsu
    • Organizer
      第29回電子材料シンポジウム(EMS29)
    • Place of Presentation
      ラフォーレ修善寺
    • Year and Date
      2010-07-16
    • Related Report
      2010 Annual Research Report
  • [Presentation] Study on AlN buffer layer for AlN growth on sapphire substrate by MOVPE2010

    • Author(s)
      R.Miyagawa, H.Miyake, K.Hiramatsu
    • Organizer
      第29回電子材料シンポジウム(EMS29)
    • Place of Presentation
      ラフォーレ修善寺
    • Year and Date
      2010-07-15
    • Related Report
      2010 Annual Research Report
  • [Presentation] 短焦点距離バイナリ型回折レンズの構造最適化2010

    • Author(s)
      荒川和哉、中山裕次、元垣内敦司、三宅秀人、平松和政
    • Organizer
      第35回光学シンポジウム
    • Place of Presentation
      東京大学 生産技術研究所
    • Year and Date
      2010-07-08
    • Related Report
      2010 Annual Research Report
  • [Presentation] HVPE Growth of Thick AlN on Trench-Patterned Sapphire Substrate2010

    • Author(s)
      H.Miyake, K.Okuura, K.Fujita, K.Hiramatsu
    • Organizer
      The 3rd International Symposium on Growth of III-Nitrides (ISGN-3)
    • Place of Presentation
      フランス モンペリエ
    • Year and Date
      2010-07-06
    • Related Report
      2010 Annual Research Report
  • [Presentation] LEDの配光制御とLED照明応用2010

    • Author(s)
      元垣内敦司、平松和政
    • Organizer
      日本学術振興会真空ナノエレクトロニクス第158委員会第83回研究会(招待講演)
    • Place of Presentation
      三重大学工学部
    • Year and Date
      2010-06-24
    • Related Report
      2011 Final Research Report
  • [Presentation] LEDの配光制御とLED照明応用2010

    • Author(s)
      元垣内敦司、平松和政
    • Organizer
      日本学術振興会真空ナノエレクトロニクス第158委員会 第83回研究会
    • Place of Presentation
      三重大学工学部(招待講演)
    • Year and Date
      2010-06-24
    • Related Report
      2010 Annual Research Report
  • [Presentation] HVPE growth of AlN on trench-patterned 6H-SiC substrates2010

    • Author(s)
      K.Okumura, H.Miyake, K.Hiramatsu, O.Eryu
    • Organizer
      The 37th International Conference on Compound Semiconductors (ISCS2010)
    • Place of Presentation
      高松シンボルタワー
    • Year and Date
      2010-06-04
    • Related Report
      2010 Annual Research Report
  • [Presentation] HVPE growth of c-plane AlN on a-plane sapphire using high-temperature buffer layer2010

    • Author(s)
      Y.Takagi, R.Miyagawa, H.Miyake, K.Hiramatsu
    • Organizer
      The 37th International Conference on Compound Semiconductors (ISCS2010)
    • Place of Presentation
      高松シンボルタワー
    • Year and Date
      2010-06-02
    • Related Report
      2010 Annual Research Report
  • [Presentation] Deep-ultraviolet luminescence from Si-doped AlGaN grown by low-pressure MOVPE2010

    • Author(s)
      Y.Shimahara, H.Taketomi, H.Miyake, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010)
    • Place of Presentation
      中国 北京
    • Year and Date
      2010-05-19
    • Related Report
      2010 Annual Research Report
  • [Presentation] HVPE growth of crack-free thick AlN film on trench-patterned AlN template2010

    • Author(s)
      K.Fujita, K.Okuura, H.Miyake, K.Hiramatsu, J.Norimatsu, H.Hirayama
    • Organizer
      The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010)
    • Place of Presentation
      中国 北京
    • Year and Date
      2010-05-19
    • Related Report
      2010 Annual Research Report
  • [Presentation] Fabrication of Deep Ultra-violet Light Source using AlGaN on AlN/sapphire2010

    • Author(s)
      H. Miyake, H. Taketomi, Y. Shimahara, K. Hiramatsu, F. Fukuyo, T. Okada, H. Takaoka and H. Yoshida
    • Organizer
      The 8th International Symposium on Semiconductor Light Emitting Devices(ISSLED2010)(招待講演)
    • Place of Presentation
      北京(中国)
    • Year and Date
      2010-05-18
    • Related Report
      2011 Final Research Report
  • [Presentation] Fabrication of Deep Ultra-violet Light Source using AlGaN on AlN/sapphire2010

    • Author(s)
      H.Miyake, H.Taketomi, Y.Shimahara, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010)
    • Place of Presentation
      中国 北京(招待講演)
    • Year and Date
      2010-05-18
    • Related Report
      2010 Annual Research Report
  • [Presentation] サファイア基板上へのAlNのMOVPE成長における界面制御2010

    • Author(s)
      宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学 (平塚市)
    • Year and Date
      2010-03-18
    • Related Report
      2009 Annual Research Report
  • [Presentation] 溝加工6H-SiC基板上への減圧HVPE法によるAlN成長2010

    • Author(s)
      奥村建太, 三宅秀人, 平松和政, 江龍修
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学 (平塚市)
    • Year and Date
      2010-03-17
    • Related Report
      2009 Annual Research Report
  • [Presentation] Si-doped AlGaNのMOVPE成長と光学特性評価2010

    • Author(s)
      島原佑樹, 武富浩幸, 三宅秀人, 平松和政, 他4名
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学 (平塚市)
    • Year and Date
      2010-03-17
    • Related Report
      2009 Annual Research Report
  • [Presentation] Fabrication of 247nm Light-Source Using AlGaN on AlN/Sapphire2010

    • Author(s)
      島原佑樹, 武富浩幸, 三宅秀人, 平松和政, et al.
    • Organizer
      IS Plasma 2010
    • Place of Presentation
      名城大学
    • Year and Date
      2010-03-09
    • Related Report
      2009 Annual Research Report
  • [Presentation] Low Pressure HVPE Growth of AIN on 6H-SiC2010

    • Author(s)
      奥村建太, 三宅秀人, 平松和政, 江龍修
    • Organizer
      IS Plasma 2010
    • Place of Presentation
      名城大学
    • Year and Date
      2010-03-08
    • Related Report
      2009 Annual Research Report
  • [Presentation] AlN Growth on Trench-Patterned AlN/Sapphire by Low-Pressure HVPE2010

    • Author(s)
      藤田浩平, 奥浦一輝, 三宅秀人, 平松和政, 乗松潤, 平山秀樹
    • Organizer
      IS Plasma 2010
    • Place of Presentation
      名城大学
    • Year and Date
      2010-03-08
    • Related Report
      2009 Annual Research Report
  • [Presentation] Growth of High-Quality AlN on a-Plane Sapphire by HVPE2010

    • Author(s)
      Y.Takagi, J.Wu, H.Miyake, K.Hiramatsu
    • Organizer
      IS Plasma 2010
    • Place of Presentation
      名城大学
    • Year and Date
      2010-03-08
    • Related Report
      2009 Annual Research Report
  • [Presentation] Fabrication of ultraviolet-C light source using MOVPE grown AlGaN layer on AlN/sapphire2010

    • Author(s)
      Hideto Miyake
    • Organizer
      SPIE Photonics West 2010(招待講演)
    • Place of Presentation
      サンフランシスコ(米国)
    • Year and Date
      2010-01-28
    • Related Report
      2011 Final Research Report
  • [Presentation] Fabrication of ultraviolet-C light source using MOVPE grown AlGaN layer on AlN/sapphire2010

    • Author(s)
      三宅秀人
    • Organizer
      SPIE Photonics West 2010
    • Place of Presentation
      サンフランシスコ (米国)
    • Year and Date
      2010-01-28
    • Related Report
      2009 Annual Research Report
  • [Presentation] Growth of High Quality c-plane AlN on a-plane Sapphire2009

    • Author(s)
      R.Miyagawa, J.Wu, H.Miyake, K.Hiramatsu
    • Organizer
      MRS Fall Meeting
    • Place of Presentation
      ボストン (米国)
    • Year and Date
      2009-12-01
    • Related Report
      2009 Annual Research Report
  • [Presentation] Control of Facet Structures in Selective Area Growth (SAG) of a-plane GaN by MOVPE2009

    • Author(s)
      馬ベイ, 宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      MRS Fall Meeting
    • Place of Presentation
      ボストン (米国)
    • Year and Date
      2009-12-01
    • Related Report
      2009 Annual Research Report
  • [Presentation] 周期溝加工AlN/サファイア上への減圧HVPE法によるAlN成長2009

    • Author(s)
      藤田浩平, 奥浦一輝, 三宅秀人, 平松和政, 乗松潤, 平山秀樹
    • Organizer
      電子情報通信学会 電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      徳島大学
    • Year and Date
      2009-11-20
    • Related Report
      2009 Annual Research Report
  • [Presentation] AlN/sapphire 上のAlGaNのMOVPE成長と発光特性2009

    • Author(s)
      島原佑樹, 武富浩幸, 三宅秀人, 平松和政, 他4名
    • Organizer
      電子情報通信学会 電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      徳島大学
    • Year and Date
      2009-11-19
    • Related Report
      2009 Annual Research Report
  • [Presentation] MOVPE法を用いたa面GaNの選択成長2009

    • Author(s)
      馬ベイ, 胡衛国, 宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第39回結晶成長国内会議
    • Place of Presentation
      名古屋大学
    • Year and Date
      2009-11-14
    • Related Report
      2009 Annual Research Report
  • [Presentation] 減圧HVPE法による溝加工基板上へのAlN成長2009

    • Author(s)
      奥浦一輝, 藤田浩平, 三宅秀人, 平松和政
    • Organizer
      第39回結晶成長国内会議
    • Place of Presentation
      名古屋大学
    • Year and Date
      2009-11-13
    • Related Report
      2009 Annual Research Report
  • [Presentation] 減圧HVPE法による6H-SiC上へのAlN成長2009

    • Author(s)
      奥村建太, 三宅秀人, 平松和政, 江龍修
    • Organizer
      第39回結晶成長国内会議
    • Place of Presentation
      名古屋大学
    • Year and Date
      2009-11-13
    • Related Report
      2009 Annual Research Report
  • [Presentation] MOVPE法による高温AlN成長2009

    • Author(s)
      宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第39回結晶成長国内会議
    • Place of Presentation
      名古屋大学
    • Year and Date
      2009-11-13
    • Related Report
      2009 Annual Research Report
  • [Presentation] A-Plane AlN and AlGaN Growth on R-Plane Sapphire by MOVPE2009

    • Author(s)
      宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      The 8th International Conference on Nitride Semiconductors
    • Place of Presentation
      済州島 (韓国)
    • Year and Date
      2009-10-22
    • Related Report
      2009 Annual Research Report
  • [Presentation] MOVPE Growth of AlGaN with AlN Mole-Fractiom Control Layer2009

    • Author(s)
      H. Miyake, H. Taketomi, Y. Shimahara, K. Hiramatsu, et al.
    • Organizer
      The 8th International Conference on Nitride Semiconductors(招待講演)
    • Place of Presentation
      済州島(韓国)
    • Year and Date
      2009-10-21
    • Related Report
      2011 Final Research Report
  • [Presentation] MOVPE Growth of AlGaN with AlN Mole-Fractiom Control Layer2009

    • Author(s)
      三宅秀人, 武富浩幸, 島原佑樹, 平松和政, et al.
    • Organizer
      The 8th International Conference on Nitride Semiconductors
    • Place of Presentation
      済州島 (韓国)
    • Year and Date
      2009-10-21
    • Related Report
      2009 Annual Research Report
  • [Presentation] The In-Plane Anisotropic and Polarized Raman-Active Modes Studies of Nonpolar AlN Grown on 6H-SiC by Low-Pressure HVPE2009

    • Author(s)
      J.Wu, K.Okumura, H.Miyake, K.Hiramatsu
    • Organizer
      The 8th International Conference on Nitride Semiconductors
    • Place of Presentation
      済州島 (韓国)
    • Year and Date
      2009-10-19
    • Related Report
      2009 Annual Research Report
  • [Presentation] 高Al組成AlGaNのAlN/sapphire 上へのMOVPE成長と発光特性2009

    • Author(s)
      島原佑樹, 武富浩幸, 三宅秀人, 平松和政, 他4名
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] 電子線励起によるAlGaNを用いた深紫外光源2009

    • Author(s)
      武富浩幸, 島原佑樹, 三宅秀人, 平松和政, 他4名
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] 周期溝加工基板を用いた減圧HVPE法によるAlN厚膜成長2009

    • Author(s)
      平松和政, 三宅秀人, 奥浦一輝, 桑野範之
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-09
    • Related Report
      2009 Annual Research Report
  • [Presentation] 周期溝加工AlN/サファイア上への減圧HVPE法によるAlN成長2009

    • Author(s)
      藤田浩平, 奥浦一輝, 三宅秀人, 平松和政, 乗松潤, 平山秀樹
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-08
    • Related Report
      2009 Annual Research Report
  • [Presentation] 加工サファイア基板上へのMOVPE法によるGaN成長における反射・反りのその場観察2009

    • Author(s)
      西村将太, 生川光久, 三宅秀人, 平松和政, 深野敦之, 谷口豊
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-08
    • Related Report
      2009 Annual Research Report
  • [Presentation] In situ monitoring on MOVPE growth of nitride semiconductors2009

    • Author(s)
      生川満久, 西村将太, 小川原悠哉, 三宅秀人, 平松和政
    • Organizer
      第28回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖 (滋賀県守山市)
    • Year and Date
      2009-07-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] Mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures2009

    • Author(s)
      W.Hu, B.Ma, D.Li, R.Miyagawa, M.Narukawa, H.Miyake, K.Hiramatsu
    • Organizer
      Asia-Pacific Workshop on wide gap Semiconductors (APWS 2009)
    • Place of Presentation
      張家界 (中国)
    • Year and Date
      2009-05-26
    • Related Report
      2009 Annual Research Report
  • [Presentation] Influence of off-cut angle of sapphire on the crystal quality of nonpolara-plane AlN by LP-HVPE2009

    • Author(s)
      J.Wu, Y.Katagiri, K.Okuura, H.Miyake, K.Hiramatsu
    • Organizer
      Asia-Pacific Workshop on wide gap Semiconductors (APWS 2009)
    • Place of Presentation
      張家界 (中国)
    • Year and Date
      2009-05-26
    • Related Report
      2009 Annual Research Report
  • [Presentation] Effects of r-plane sapphire nitridation on a-plane GaN grown by MOVPE2009

    • Author(s)
      馬ベイ, 三宅秀人, 平松和政
    • Organizer
      Asia-Pacific Workshop on wide gap Semiconductors (APWS 2009)
    • Place of Presentation
      張家界 (中国)
    • Year and Date
      2009-05-26
    • Related Report
      2009 Annual Research Report
  • [Presentation] AlN/sapphire 上のAlGaNのMOVPE成長と電子線励起による深紫外発光2009

    • Author(s)
      武富浩幸, 三宅秀人, 平松和政, 他4名
    • Organizer
      電子情報通信学会 電子デバイス電子部品・材料シリコン材料・デバイス研究会
    • Place of Presentation
      豊橋技術科学大学 (豊橋市)
    • Year and Date
      2009-05-15
    • Related Report
      2009 Annual Research Report
  • [Presentation] MOVPE法によるr面サファイア上へのa面GaN成長2009

    • Author(s)
      馬ベイ, 宮川鈴衣奈, 胡衛国, 三宅秀人, 平松和政
    • Organizer
      電子情報通信学会 電子デバイス電子部品・材料シリコン材料・デバイス研究会
    • Place of Presentation
      豊橋技術科学大学
    • Year and Date
      2009-05-15
    • Related Report
      2009 Annual Research Report
  • [Presentation] 窒化物半導体のMOVPE成長におけるその場観察2009

    • Author(s)
      生川満久, 西村将太, 小川原悠哉, 三宅秀人, 平松和政
    • Organizer
      第1回窒化物半導体結晶成長講演会
    • Place of Presentation
      東京農工大学
    • Year and Date
      2009-05-15
    • Related Report
      2009 Annual Research Report
  • [Presentation] r面サファイア上へのMOVPE法によるa面AlN, AlGaN成長2009

    • Author(s)
      宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第1回窒化物半導体結晶成長講演会
    • Place of Presentation
      東京農工大学
    • Year and Date
      2009-05-15
    • Related Report
      2009 Annual Research Report
  • [Book] 新インターユニバーシティ半導体工学2009

    • Author(s)
      平松和政、元垣内敦司, 他4名
    • Publisher
      (株)オーム社
    • Related Report
      2011 Final Research Report
  • [Book] 窒化物基板および講師整合基板の成長とデバイス特性2009

    • Author(s)
      三宅秀人、宮川鈴衣奈, 他35名
    • Publisher
      (株)シーエムシー出版
    • Related Report
      2011 Final Research Report
  • [Remarks]

    • URL

      http://www.opt.elec.mie-u.ac.jp

    • Related Report
      2011 Final Research Report
  • [Remarks]

    • URL

      http://cute.rc.mie-u.ac.jp

    • Related Report
      2011 Final Research Report
  • [Remarks] 三重大学大学院工学研究科電気電子工学専攻オプトエレクトロニクス研究室

    • URL

      http://www.opt.elec.mie-u.ac.jp

    • Related Report
      2011 Annual Research Report
  • [Remarks] 三重大学極限ナノエレクトロニクスセンター

    • URL

      http://www.cute.rc.mie-u.ac.jp

    • Related Report
      2011 Annual Research Report
  • [Remarks]

    • URL

      http://www.opt.elec.mie-u.ac.jp

    • Related Report
      2010 Annual Research Report
  • [Remarks]

    • URL

      http://www.opt.elec.mie-u.ac.jp

    • Related Report
      2009 Annual Research Report

URL: 

Published: 2009-04-01   Modified: 2016-04-21  

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