Creation of the modulated facet structures of III-nitride semiconductors and development of the white LEDs with wide and continuous wavelength spectra
| Project/Area Number |
21360007
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Mie University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
MIYAKE Hideto 三重大学, 大学院・工学研究科, 准教授 (70209881)
MOTOGAITO Atsushi 三重大学, 大学院・工学研究科, 助教 (00303751)
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| Project Period (FY) |
2009 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥18,200,000 (Direct Cost: ¥14,000,000、Indirect Cost: ¥4,200,000)
Fiscal Year 2011: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
Fiscal Year 2010: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
Fiscal Year 2009: ¥11,570,000 (Direct Cost: ¥8,900,000、Indirect Cost: ¥2,670,000)
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| Keywords | エピタキシャル成長 / 選択成長 / 非極性 / 窒化物半導体 / 発光ダイオード / MOVPE / m面 / ファセット制御 / 転位 / 歪み / GaN / ファセット変調構造 |
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| Research Abstract |
In this study, in order to solve the fluctuation of the light emitting wave length and color rendering properties, the selective area growth on a plane GaN and the fabrication of the flat m-plane GaN are carried out aiming at the development of the white LED with continuous and wide wavelength range. By controlling growth temperature and growth pressure, the facet controlled structures can be fabricated. Also by using this technique, the flat m-plane GaN can be obtained. From these results, The development of the white LED with continuous and wide wavelength range can be realized.
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Report
(4 results)
Research Products
(177 results)
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[Journal Article]2009
Author(s)
平松和政, 元垣内敦司, 他4名
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Journal Title
新インターユニバーシティ 半導体工学((株) オーム社)
Pages: 1-46
Related Report
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[Journal Article]2009
Author(s)
三宅秀人, 宮川鈴衣奈, 他35名
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Journal Title
窒化物基板および講師整合基板の成長とデバイス特性((株) シーエムシー出版)
Pages: 119-127
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[Presentation] 250 nm emission from Si-doped AlGaN and its quantum wells upon excitation by electron beam2011
Author(s)
H.Miyake, Y.Shimahara, S.Ochiai, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida, T.Fujita, T.Kuwahara, N.Kuwano
Organizer
The 5th Asia-pacific Workshop on Widegap Semiconductors (APWS2011)
Place of Presentation
鳥羽国際ホテル
Year and Date
2011-05-26
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