Bi-containing III-V semiconductor super lattices for laser diodes with temperature-insensitive laser oscillation wavelength
Project/Area Number |
21360008
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Research Category |
Grant-in-Aid for Scientific Research (B)
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Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Applied materials science/Crystal engineering
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Research Institution | Kyoto Institute of Technology |
Principal Investigator |
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Co-Investigator(Kenkyū-buntansha) |
OE Kunishige 京都工芸繊維大学, 工芸科学研究科, 教授 (20303927)
|
Project Period (FY) |
2009 – 2011
|
Project Status |
Completed (Fiscal Year 2011)
|
Budget Amount *help |
¥15,340,000 (Direct Cost: ¥11,800,000、Indirect Cost: ¥3,540,000)
Fiscal Year 2011: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2010: ¥6,760,000 (Direct Cost: ¥5,200,000、Indirect Cost: ¥1,560,000)
Fiscal Year 2009: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
|
Keywords | 結晶成長 / 半導体物性 / 光物性 / 超格子 / 電子・電気材料 |
Research Abstract |
Bismuth-containing III-V semiconductors such as GaAsBi and related alloys have unusual properties owing to a reduction of the temperature coefficient of the band gap. These dilute bismuthide III-V alloys are promising for laser diodes with temperature-insensitive wavelengths. The results of transmission electron microscopy, photoluminescence measurements and deep-level transient spectroscopy reveal that metastable GaAsBi grown by molecular beam epitaxy(MBE) has sufficient quality desirable for optoelectronic devices. Laser oscillation for GaAsBi with a temperature-insensitive wavelength is achieved in this study for the first time. GaAsBi/AlGaAs multi-quantum wells have been successfully grown by MBE. Traps at GaAsBi/AlGaAs interface were analyzed, and the trap density was reduced.
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Report
(4 results)
Research Products
(59 results)
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[Presentation] p形GaAsBiの電気的特性2011
Author(s)
角浩輔, 山田和弥, 尾江邦重, 吉本昌広
Organizer
第30回電子材料シンポジウム
Place of Presentation
ラフォーレ琵琶湖(滋賀県守山市)
Year and Date
2011-06-30
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