| Budget Amount *help |
¥15,340,000 (Direct Cost: ¥11,800,000、Indirect Cost: ¥3,540,000)
Fiscal Year 2011: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2010: ¥6,760,000 (Direct Cost: ¥5,200,000、Indirect Cost: ¥1,560,000)
Fiscal Year 2009: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
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| Research Abstract |
Bismuth-containing III-V semiconductors such as GaAsBi and related alloys have unusual properties owing to a reduction of the temperature coefficient of the band gap. These dilute bismuthide III-V alloys are promising for laser diodes with temperature-insensitive wavelengths. The results of transmission electron microscopy, photoluminescence measurements and deep-level transient spectroscopy reveal that metastable GaAsBi grown by molecular beam epitaxy(MBE) has sufficient quality desirable for optoelectronic devices. Laser oscillation for GaAsBi with a temperature-insensitive wavelength is achieved in this study for the first time. GaAsBi/AlGaAs multi-quantum wells have been successfully grown by MBE. Traps at GaAsBi/AlGaAs interface were analyzed, and the trap density was reduced.
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