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Study on the Physical Properties of Ferromagnetic Nitride Semiconductor Quantum Nanostructures and their Device Application

Research Project

Project/Area Number 21360010
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionOsaka University

Principal Investigator

ASAHI Hajime  大阪大学, 産業科学研究所, 教授 (90192947)

Co-Investigator(Kenkyū-buntansha) HASEGAWA Shigehiko  大阪大学, 産業科学研究所, 准教授 (50189528)
EMURA Shuichi  大阪大学, 産業科学研究所, 助教 (90127192)
ZHOU Ikai  大阪大学, 産業科学研究所, 助教 (60346179)
Project Period (FY) 2009 – 2011
Project Status Completed (Fiscal Year 2011)
Budget Amount *help
¥18,850,000 (Direct Cost: ¥14,500,000、Indirect Cost: ¥4,350,000)
Fiscal Year 2011: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2010: ¥6,760,000 (Direct Cost: ¥5,200,000、Indirect Cost: ¥1,560,000)
Fiscal Year 2009: ¥9,360,000 (Direct Cost: ¥7,200,000、Indirect Cost: ¥2,160,000)
Keywordsスピンエレクトロニクス / 半導体物性 / MBE / ナノ材料 / 結晶工学 / スピンエレクロニクス
Research Abstract

In the multi-quantum well(MQW) structures consisting of rare-earth atom doped magnetic nitride semiconductor and non-magnetic nitride semiconductor, enhanced magnetization was observed. By Si co-doping, further enhancement was observed. These enhancements are understood by the effect of carrier increase in the magnetic semiconductor layers and the enhancement in the interaction between carrier spin and magnetic atom spin. In this MQW sample, large energy shift of photoluminescence(PL) peak was observed due to the magnetic atom doping effect. The possibility of the control of easy magnetization axis was demonstrated. The quantum disk structures and circular-polarized light emitting diode structures were grown and PL emission was observed.

Report

(4 results)
  • 2011 Annual Research Report   Final Research Report ( PDF )
  • 2010 Annual Research Report
  • 2009 Annual Research Report
  • Research Products

    (66 results)

All 2012 2011 2010 2009 Other

All Journal Article (34 results) (of which Peer Reviewed: 34 results) Presentation (28 results) Remarks (4 results)

  • [Journal Article] Observation of large Zeeman splitting in GaGdN/ AlGaN ferromagnetic semiconductor double quantum well superlattices2012

    • Author(s)
      Y. K. Zhou, M. Almokhtar, H. Tani, H. Kubo, N. Mori, S. Emura, S. Hasegawa and H. Asahi
    • Journal Title

      Solid State Communications(2012)

      Volume: (印刷中)

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Effect of growth conditions on magnetic and structural properties in Gd-doped GaN layers grown by plasma-assisted molecular beam epitaxy2012

    • Author(s)
      H.Hasegawa, S.Komori, K.Higashi, D.Abe, Y.K.Zhou, H.Asahi
    • Journal Title

      Phys.Stat.Sol.C

      Volume: 9 Pages: 741-744

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Large magneto-optical effect in low-temperature-grown GaCrN and GaCrN:Si2012

    • Author(s)
      Y.K.Zhou, S.Emura, S.Hasegawa, H.Asahi
    • Journal Title

      Phys.Stat.Sol.C

      Volume: 9 Pages: 719-722

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Structural, magnetic and optical studies of ultrathin GaGdN/AlGaN multiquantum well structure2012

    • Author(s)
      M.Almokhtar, S.Emura, Y.K.Zhou, S.Hasegawa, H.Asahi
    • Journal Title

      Phys.Stat.Sol.C

      Volume: 9 Pages: 737-740

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Rare-earth doped III-nitride semiconductors for semiconductor spintronics2012

    • Author(s)
      H.Asahi, S.Hasegawa, Y.K.Zhou, S.Emura
    • Journal Title

      Journal of Luminescence

      Volume: (印刷中)

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Observation of large Zeeman splitting in GaGdN/AlGaN ferromagnetic semiconductor double quantum well superlattices2012

    • Author(s)
      Y.K.Zhou, M.Almokhtar, H.Tani, H.Kubo, N.Mori, S.Emura, S.Hasegawa, H.Asahi
    • Journal Title

      Solid State Communications

      Volume: (印刷中)

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Influence of Si-doping on the characteristics of InGaGdN/ GaN MQWs grown by MBE2011

    • Author(s)
      S. N. M. Tawil, D. Krishnamurthy, R. Kakimi, M. Ishimaru, S. Emura, S. Hasegawa and H. Asahi
    • Journal Title

      Phys. Stat. Sol.

      Volume: C8(2) Pages: 491-493

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] GaGdN/ AlGaN multiple quantum disks grown by RF-plasma-assisted molecular-beam epitaxy, Phys2011

    • Author(s)
      H. Tambo, S. Hasegawa, M. Uenaka, Y. K. Zhou, S. Emura and H. Asahi
    • Journal Title

      Stat. Sol.

      Volume: A208(7) Pages: 1576-1578

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Studies on the InGaGdN/ GaN magnetic semiconductor heterostructures grown by plasma-assisted molecular-beam epitaxy2011

    • Author(s)
      S. N. M. Tawil, D. Krishnamurthy, R. Kakimi, S. Emura, S. Hasegawa and H. Asahi
    • Journal Title

      J. Cryst. Growth

      Volume: 323 Pages: 351-354

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Influence of Si-doping on the characteristics of InGaGdN/GaN MQWs grown by MBE2011

    • Author(s)
      S.N.M.Tawil, D.Krishnamurthy, R.Kakimi, M.Ishimaru, S.Emura, S.Hasegawa, H.Asahi
    • Journal Title

      Phys.Stat.Sol.C

      Volume: 8 Pages: 491-493

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Defect structure of MBE-grown GaCrN diluted magnetic semiconductor films2011

    • Author(s)
      A.Yabuuchi, M.Maekawa, A.Kawasuso, S.Hasegawa, Y.K.Zhou, H.Asahi
    • Journal Title

      Journal of Physics : Conference Series

      Volume: 262

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Co-ordination alignments at the vicinity of the dopant Cr ions in AIN2011

    • Author(s)
      S.Emura, S.Kimuia, K.Tokuda, H.Tambo, S.Hasegawa, H.Asahi
    • Journal Title

      Phys.Stat.Sol.C

      Volume: 8 Pages: 473-475

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Structural and Magnetic Properties of Diluted Magnetic Semiconductor GaGdN Nanorods2011

    • Author(s)
      H.Tambo, S.Hasegawa, K.Higashi, R.Kakimi, S.N.M.Tawil, Y.K.Zhou, S.Emura, H.Asahi
    • Journal Title

      Phys.Stat.Sol.C

      Volume: 8 Pages: 494-496

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Investigations on the properties of intermittently Gd-doped InGaN structures grown by molecular-beam epitaxy2011

    • Author(s)
      D.Krishnamurthy, S.N.M.Tawil, R.Kakimi, M.Ishimaru, S.Emura, S.Hasegawa, H.Asahi
    • Journal Title

      Phys.Stat.Sol.C

      Volume: 8 Pages: 497-499

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Studies on the InGaGdN/GaN magnetic semiconductor heterostructures grown by plasma-assisted molecular-beam epitaxy2011

    • Author(s)
      S.N.M.Tawil, D.Krishnamurthy, R.Kakimi, S.Emura, S.Hasegawa, H.Asahi
    • Journal Title

      J.Cryst.Growth

      Volume: 323 Pages: 351-354

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Low-temperature molecular beam epitaxy growth and properties of GaGdN nanorods2011

    • Author(s)
      H.Tambo, S.Hasegawa, H.Kameoka, Y.K.Zhou, S.Emura, H.Asahi
    • Journal Title

      J.Ciyst.Growth

      Volume: 323 Pages: 323-325

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Structural characterization of MBE grown InGaGdN/GaN and InGaN/GaGdN superlattice structures2011

    • Author(s)
      D.Krishnamurthy, S.N.M.Tawil, M.Ishimaru, S.Emura, Y.K.Zhou, S.Hasegawa, H.Asahi
    • Journal Title

      Phys.Stat.Sol.C

      Volume: 8 Pages: 2245-2247

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Growth of Gd-doped InGaN/GaN multiple quantum wells and their characterization2011

    • Author(s)
      S.Hasegawa, R.Kakimi, S.N.M.Tawil, D.Krishnamurthy, Y.K.Zhou, H.Asahi
    • Journal Title

      Phys.Stat.Sol.C

      Volume: 8 Pages: 2047-2049

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Large magneto-optical effect in low-temperature-grown GaDyN2011

    • Author(s)
      Y.K.Zhou, S.Emura, S.Hasegawa, H.Asahi
    • Journal Title

      Phys.Stat.Sol.C

      Volume: 8 Pages: 2173-2175

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] GaGdN/AlGaN multiple quantum disks grown by RF-plasma-assisted molecular-beam epitaxy2011

    • Author(s)
      H.Tambo, S.Hasegawa, M.Uenaka, Y.K.Zhou, S.Emura, H.Asahi
    • Journal Title

      Phys.Stat.Sol.A

      Volume: 208 Pages: 1576-1578

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Photoluminescence from exciton-polarons in GaGdN/AlGaN multiquantum wells2011

    • Author(s)
      M.Almokhtar, S.Emura, Y.K.Zhou, S.Hasegawa, H.Asahi
    • Journal Title

      J.Phys. : Condens.Matter.

      Volume: 23

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Influence of Si-doping on the characteristics of InGaGdN/GaN MQWs grown by MBE2011

    • Author(s)
      S.N.M. Tawil, D. Krishnamurthy, M.Ishimaru, S.Emura, S. Hasegawa, H. Asahi
    • Journal Title

      Phys. Status Solidi(c)

      Volume: 8 Pages: 491-493

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Studies on the InGaGdN/GaN magnetic semiconductor heterostructures grown by plasma-assisted molecular-beam epitaxy2011

    • Author(s)
      S.N.M. Tawil, D. Krishnamurthy, R.Kakimi, S. Emura, S. Hasegawa, H.Asahi
    • Journal Title

      J.Cryst. Growth

      Volume: (印刷中)

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Structural characterization of MBE grown InGaGdN/GaN and InGaN/GaGdN superlattice structures2011

    • Author(s)
      D.Krishnamurthy, S.N.M. Tawil, M.Ishunaru, S. Emura, Y.K. Zhou, S.Hasegawa, H. Asahi
    • Journal Title

      Phys. Stat. Sol.

      Volume: (印刷中)

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Low-temperature molecular beam epitaxy growth and properties of GaGdN nanorods2011

    • Author(s)
      H.Tambo, S.Hasegawa, H.Kameoka, Y.K.Zhou, S.Emura, H.Asahi
    • Journal Title

      J.Cryst Growth

      Volume: (印刷中)

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] GaGdN/AlGaN multiple quantum disks grown by RF-plasma-assisted molecular-beam epitaxy2011

    • Author(s)
      H.Tambo, S.Hasegawa, M.Uenaka, Y.K.Zhou, S.Emura, H.Asahi
    • Journal Title

      Phys. Stat. Sol.

      Volume: (印刷中)

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Structural and magnetic properties of GaGdN/ GaN superlattice structures2010

    • Author(s)
      Y. K. Zhou, S. W. Choi, S. Kimura, S. Emura, S. Hasegawa and H. Asahi
    • Journal Title

      Thin Solid Films

      Volume: 518 Pages: 5659-5661

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Structural and magnetic properties of GaGdN/GaN superlattice structures2010

    • Author(s)
      Y.K. Zhou, S.W. Choi, S. Kimura, S.Emura, S. Hasegawa, H. Asahi
    • Journal Title

      Thin Solid Films

      Volume: 518 Pages: 5659-5661

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Annealing effect in GaDyN on optical and magnetic properties2010

    • Author(s)
      Y.K Zhou, M.Takahashi, S.Emura, S.Hasegawa, H.Asahi
    • Journal Title

      Journal of Superconductivity and Novel Magnetism 23

      Pages: 103-105

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Structural and magnetic properties of GaGdN/GaN superlattice structures2010

    • Author(s)
      Y.K.Zhou, S.W.Choi, S.Kimura, S.Emura, S.Hasegawa, H.Asahi
    • Journal Title

      Thin Solid Films (印刷中)

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Formation of aligned CrN nanoclusters in Cr-delta-doped GaN2009

    • Author(s)
      Y.K.Zhou, S.Kimura, S.Emura, S.Hasegawa, H.Asahi
    • Journal Title

      J.Phys. : Condens. Matter. 21

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Structural properties of AlCrN, GaCrN and InCrN2009

    • Author(s)
      S.Kimura, S.Emura, K.Tokuda, Y.K.Zhou, S.Hasegawa, H.Asahi
    • Journal Title

      J.Crystal Growth 311

      Pages: 2046-2048

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Crystal growth and characterization of GaCrN nanorods on Si substrate2009

    • Author(s)
      H.Tambo, S.Kimura, Y.Yamauchi, Y.Hiromura, Y.K.Zhou, S.Emura, S.Hasegawa, H.Asahi
    • Journal Title

      J.Crystal Growth 311

      Pages: 2962-2965

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Ferromagnetism and Luminescence of Diluted Magnetic Semiconductors GaGdN and AlGdN2009

    • Author(s)
      S.Emura, M.Takahashi, H.Tambo, A.Suzuki, T.Nakamura, Y.K.Zhou, S.Hasegawa, H.Asahi
    • Journal Title

      J.Crystal Growth 311

      Pages: 2046-2048

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Presentation] Growth and characterization of Gd-doped GaN nanorods on Si(111) substrate2011

    • Author(s)
      M.Uenaka, M.Kimura, S.Hasegawa, H.Asahi
    • Organizer
      6th International Symposium on Surface Science
    • Place of Presentation
      Funabori, Tokyo, Japan
    • Year and Date
      2011-12-14
    • Related Report
      2011 Annual Research Report
  • [Presentation] Growth and characterization of GaDyN/AlGaN multi-quantum well structures2011

    • Author(s)
      Y.Nakatani, Y.K.Zhou, M.Sano, S.Emura, S.Hasegawa, H.Asahi
    • Organizer
      6th International Symposium on Surface Science
    • Place of Presentation
      Funabori, Tokyo, Japan
    • Year and Date
      2011-12-14
    • Related Report
      2011 Annual Research Report
  • [Presentation] Characterization of GaGdN/AlGaN/GaGdN Triple-layer Structures with High Gd Concentration for Tunneling Magnetoresistance Devices2011

    • Author(s)
      K.Higashi, D.Abe, Y.Mitsuno, S.Komori, S.Sano, S.Hasegawa, H.Asahi
    • Organizer
      2011 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2011-09-29
    • Related Report
      2011 Annual Research Report
  • [Presentation] Growth and characterization of GaN-based dilute magnetic semiconductors2011

    • Author(s)
      S. Hasegawa and H. Asahi
    • Organizer
      Asia-Pacific Workshop on Materials Characterization
    • Place of Presentation
      Chennai(インド)
    • Year and Date
      2011-09-23
    • Related Report
      2011 Final Research Report
  • [Presentation] Growth and characterization of GaN-based dilute magnetic semiconductors2011

    • Author(s)
      S.Hasegawa, H.Asahi
    • Organizer
      Asia-Pacific Workshop on Materials Characterization
    • Place of Presentation
      Chennai, India(招待講演)
    • Year and Date
      2011-09-23
    • Related Report
      2011 Annual Research Report
  • [Presentation] Rare-earth doped III-nitride semiconductors for semiconductor spintronics2011

    • Author(s)
      H.Asahi, S.Hasegawa, Y.K.Zhou, S.Emura
    • Organizer
      European Materials Research Society Fall 2011 Meeting
    • Place of Presentation
      Warsaw, Poland(招待講演)
    • Year and Date
      2011-09-21
    • Related Report
      2011 Annual Research Report
  • [Presentation] Rare-earth doped III-nitride semiconductors for semiconductor spintronics2011

    • Author(s)
      H. Asahi, S. Hasegawa, Y. K. Zhou and S. Emura
    • Organizer
      European Materials Research Society Fall 2011 Meeting
    • Place of Presentation
      Warsaw(ポーランド)
    • Year and Date
      2011-09-20
    • Related Report
      2011 Final Research Report
  • [Presentation] New photoluminescence from GaGdN/Al_<0.12>Ga_<0.88>N multi-quantum well2011

    • Author(s)
      M.Almokhtar, S.Emura, Y.K.Zhou, S.Hasegawa, H.Asahi
    • Organizer
      9th International Conference on Nitride Semiconductors
    • Place of Presentation
      Glasgow, UK
    • Year and Date
      2011-07-13
    • Related Report
      2011 Annual Research Report
  • [Presentation] Large magneto-optical effect in low-temperature-grown GaCrN and GaCrN:Si2011

    • Author(s)
      Y.K.Zhou, S.Emura, S.Hasegawa, H.Asahi
    • Organizer
      9th International Conference on Nitride Semiconductors
    • Place of Presentation
      Glasgow, UK
    • Year and Date
      2011-07-12
    • Related Report
      2011 Annual Research Report
  • [Presentation] Effect of growth conditions on magnetic and structural properties in Gd-doped GaN layers grown by plasma-assisted molecular beam epitaxy2011

    • Author(s)
      H.Hasegawa, S.Komori, K.Higashi, D.Abe, Y.K.Zhou, H.Asahi
    • Organizer
      9th International Conference on Nitride Semiconductors
    • Place of Presentation
      Glasgow, UK
    • Year and Date
      2011-07-11
    • Related Report
      2011 Annual Research Report
  • [Presentation] Molecular beam epitaxy and characterization of InGaN thin films doped with gadolinium2011

    • Author(s)
      S.N.M.Tawil, D.Krishnamurthy, S.Emura, S.Hasegawa, H.Asahi
    • Organizer
      12th International Conference on Quality in Research
    • Place of Presentation
      Bali, Indonesia
    • Year and Date
      2011-07-05
    • Related Report
      2011 Annual Research Report
  • [Presentation] Large Zeeman splitting in GaGdN/AlGaN magnetic semiconductor double quantum well superlattices2011

    • Author(s)
      Y.K.Zhou, M.Almokhtar, H.Kubo, N.Mori, S.Emura, S.Hasegawa, H.Asahi
    • Organizer
      5th Asia-Pacific Workshop on Widegap Semiconductors
    • Place of Presentation
      Toba, Mie, Japan
    • Year and Date
      2011-05-24
    • Related Report
      2011 Annual Research Report
  • [Presentation] Carrier-mediated ferromagnetism in InGaGdN grown by plasma-assisted molecular beam epitaxy2011

    • Author(s)
      S.N.M.Tawil, Y.K.Zhou, D.Krishnamurthy, S.Emura, S.Hasegawa, H.Asahi
    • Organizer
      23rd International Conference on Indium Phosphide and Related Materials
    • Place of Presentation
      Berlin, Germany
    • Year and Date
      2011-05-23
    • Related Report
      2011 Annual Research Report
  • [Presentation] Growth and characterization of GaN-based dilute magnetic semicondcutors and their nanostructures2011

    • Author(s)
      S. Hasegawa, Y. K. Zhou, S. Emura and H. Asahi
    • Organizer
      2011 Villa Conference on Interactions Among Nanostructures
    • Place of Presentation
      Las Vegas(米国)
    • Year and Date
      2011-04-23
    • Related Report
      2011 Final Research Report
  • [Presentation] Growth and characterization of GaN-based dilute magnetic semicondcutors and their nanostructures2011

    • Author(s)
      S.Hasegawa, Y.K.Zhou, S, Emura, H.Asahi
    • Organizer
      2011 Villa Conference on Interactions Among Nanostructures
    • Place of Presentation
      Las Vegas, Nevada, USA(招待講演)
    • Year and Date
      2011-04-22
    • Related Report
      2011 Annual Research Report
  • [Presentation] Growth and characterization of transition-metal and rare-earth doped III-nitride semiconductors for spintronics2010

    • Author(s)
      H. Asahi, S. Hasegawa, Y. K. Zhou and S. Emura
    • Organizer
      2010 MRS Fall Meeting
    • Place of Presentation
      Boston(米国)
    • Year and Date
      2010-12-01
    • Related Report
      2011 Final Research Report
  • [Presentation] Growth and characterization of transition-metal and rare-earth doped III-nitride semiconductors for spintronics2010

    • Author(s)
      H.Asahi, S.Hasegawa, Y.K.Zhou, S.Emura
    • Organizer
      2010 MRS Fall Meeting
    • Place of Presentation
      ボストン(米国)(招待講演)
    • Year and Date
      2010-11-30
    • Related Report
      2010 Annual Research Report
  • [Presentation] Studies on the InGaGdN/GaN magnetic semiconductor heterostructures grown by plasma-assisted molecular-beam epitaxy2010

    • Author(s)
      S.N.M.Tawil, D.Krishnamurthy, R.Kakimi, S.Emura, S.Hasegawa, H.Asahi
    • Organizer
      16th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      ベルリン(ドイツ)
    • Year and Date
      2010-08-25
    • Related Report
      2010 Annual Research Report
  • [Presentation] MBE growth and characterization of GaGdN/AlGaN magnetic semiconductor double quantum well superlattices2010

    • Author(s)
      Y.K Zhou, M.Almokhtar, H.Tani, H.Kubo, N.Mori, S.Emura, S.Hasegawa, H.Asahi
    • Organizer
      3rd International Symposium on Growth of III-Nitrides
    • Place of Presentation
      モンペリエ(フランス)
    • Year and Date
      2010-07-06
    • Related Report
      2010 Annual Research Report
  • [Presentation] Influence of Si-doping on the Characteristics of InGaGdN/GaN MQWs Grown by MBE2010

    • Author(s)
      S.N.M.Tawil, D.Krishnamurthy, R.Kakimi, M.Ishimaru, S.Emura, S.Hasegawa, H.Asahi
    • Organizer
      37th Intennational Symposium on Compound Semiconductor
    • Place of Presentation
      高松シンボルタワー(高松)
    • Year and Date
      2010-06-01
    • Related Report
      2010 Annual Research Report
  • [Presentation] 強磁性半導体による光半導体スピントロニクスデバイス2010

    • Author(s)
      朝日一、長谷川繁彦、周逸凱、江村修一
    • Organizer
      2010年春電子情報通信学会総合大会
    • Place of Presentation
      仙台
    • Year and Date
      2010-03-17
    • Related Report
      2011 Final Research Report
  • [Presentation] 強磁性半導体による光半導体スピントロニクスデバイス(招待講演)2010

    • Author(s)
      朝目一、長谷川繁彦、周逸凱、江村修一
    • Organizer
      電子情報通信学会総合大会
    • Place of Presentation
      東北大学(宮城県)
    • Year and Date
      2010-03-16
    • Related Report
      2009 Annual Research Report
  • [Presentation] Synthesis and Characterization of Gd-doped InGaN Thin Films and Superlattice Structure2010

    • Author(s)
      S.N.M.Tawil, D.Krishnamurthy, R.Kakimi, M.Ishimaru, S.Emura, S.Hasegawa, H.Asahi
    • Organizer
      IEEE International NanoElectronics Conference (INEC 2010)
    • Place of Presentation
      香港(中国)
    • Year and Date
      2010-01-06
    • Related Report
      2009 Annual Research Report
  • [Presentation] Growth and characterization of GaN-based room-temperature fercomagnetic semiconductors for semiconductor spintronics (招待講演)2009

    • Author(s)
      H.Asahi, S.Hasegawa, Y.K.Zhou, S.Emura
    • Organizer
      11th Takayanagi Kenjiro Memorial Symposium
    • Place of Presentation
      静岡大学(静岡県)
    • Year and Date
      2009-11-13
    • Related Report
      2009 Annual Research Report
  • [Presentation] Growth and characterization of GaN-based room-temperature ferromagnetic semiconductors for semiconductor spintronics2009

    • Author(s)
      H. Asahi, S. Hasegawa, Y. K. Zhou and S. Emura
    • Organizer
      11th Takayanagi Kenjiro Memorial Symposium
    • Place of Presentation
      静岡
    • Year and Date
      2009-11-12
    • Related Report
      2011 Final Research Report
  • [Presentation] Large Zeeman splitting in low-temperature-grown GaDyN2009

    • Author(s)
      Y.K.Zhou, H.Ichihara, S.Emura, S.Hasegawa, H.Asahi
    • Organizer
      International Symposium of Post-Silicon Materials and Devices Research Alliance Project
    • Place of Presentation
      大阪大学(大阪府)
    • Year and Date
      2009-09-05
    • Related Report
      2009 Annual Research Report
  • [Presentation] Growth and Characterization of GaGdN Nanorods2009

    • Author(s)
      H.Tambo, S.Hasegawa, Y.K.Zhou, S.Emura, H.Asahi
    • Organizer
      International Symposium of Post-Silicon Materials and Devices Research Alliance Project
    • Place of Presentation
      大阪大学(大阪府)
    • Year and Date
      2009-09-05
    • Related Report
      2009 Annual Research Report
  • [Presentation] Enhancement of saturation magnetization in GaGdN/AlGaN multiple quantum wells grown by PA-MBE2009

    • Author(s)
      S.Hasegawa, H.Tani, M.Kin, Y.K.Zhou, H.Asahi
    • Organizer
      14th International Conference on Modulated Semiconduct or Structures (MSS-14)
    • Place of Presentation
      神戸国際会議場(兵庫県)
    • Year and Date
      2009-07-21
    • Related Report
      2009 Annual Research Report
  • [Remarks]

    • URL

      http://www.sanken.osaka-u.ac.jp/labs/pem/

    • Related Report
      2011 Final Research Report
  • [Remarks]

    • URL

      http://www.sanken.osaka-u.ac.jp/labs/pem/

    • Related Report
      2011 Annual Research Report
  • [Remarks]

    • URL

      http://www.sanken.osaka-u.ac.jp/labs/pem/

    • Related Report
      2010 Annual Research Report
  • [Remarks]

    • URL

      http://www.sanken.osaka-u.ac.jp/labs/pem/

    • Related Report
      2009 Annual Research Report

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Published: 2009-04-01   Modified: 2016-04-21  

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