| Budget Amount *help |
¥18,330,000 (Direct Cost: ¥14,100,000、Indirect Cost: ¥4,230,000)
Fiscal Year 2013: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2012: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
Fiscal Year 2011: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
Fiscal Year 2010: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2009: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
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| Research Abstract |
This study aimed to fabricate a short channel organic field effect transistor (FET), which will have high switching speed from MHz to GHz by improving the device structure. We fabricated bottom contact type ruburene FET using our original flattened metal electrodes. Maximum switching speed up to 6MHz has attained owing to decreased parasitic capacitance realized by an individual gate structure and effort to decrease the contact resistance. However, the attainment was still lower than initial desired value, 100MHz, because of our insufficient device fabrication technique. We have tried to find a wet process fabricate technique of carbon nanotube FET device, which will have similar advantage of organic devices. We successfully fabricated a bottom contact carbone nanotube FET on our flat electrodes showing ambipolar characteristics by a conventional wet process.
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