Study of flashmemory using organic and molecular materials

Research Project

Project/Area Number	21360012
Research Category	Grant-in-Aid for Scientific Research (B)
Allocation Type	Single-year Grants
Section	一般
Research Field	Applied materials science/Crystal engineering
Research Institution	Hiroshima University
Principal Investigator	NAKAJIMA Anri 広島大学, ナノデバイス・バイオ融合科学研究所, 准教授 (70304459)
Co-Investigator(Kenkyū-buntansha)	YOKOYAMA Shin 広島大学, ナノデバイス・バイオ融合科学研究所, 教授 (80144880)
Project Period (FY)	2009 – 2011
Project Status	Completed (Fiscal Year 2011)
Budget Amount *help	¥19,110,000 (Direct Cost: ¥14,700,000、Indirect Cost: ¥4,410,000) Fiscal Year 2011: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000) Fiscal Year 2010: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000) Fiscal Year 2009: ¥13,390,000 (Direct Cost: ¥10,300,000、Indirect Cost: ¥3,090,000)
Keywords	有機 / 分子エレクトロニクス / フラッシュメモリ / 有機分子 / フラーレン / シリコン
Research Abstract	A gate stack structure with an organic-polymer tunneling gate insulator on a C_60-containing organic-polymer layer was developed for use as nonvolatile flash memory. Examination of the memory characteristics revealed substantial flatband voltage shifts for carrier injection into C_60 molecules. A long retention time was obtained for electron injection. Charge redistribution phenomena were observed in the electron retention characteristics immediately after the bias voltage application was terminated.