| Budget Amount *help |
¥18,720,000 (Direct Cost: ¥14,400,000、Indirect Cost: ¥4,320,000)
Fiscal Year 2011: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2010: ¥5,980,000 (Direct Cost: ¥4,600,000、Indirect Cost: ¥1,380,000)
Fiscal Year 2009: ¥8,840,000 (Direct Cost: ¥6,800,000、Indirect Cost: ¥2,040,000)
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| Research Abstract |
This project focused on development of vertically-constructed deep UV LEDs by removing substrates. In the conventional substrate-removing techniques for blue LEDs, laser-lift off is used to remove substrates at the interfaces between substrate and GaN epi-layers. For deep UV LEDs, laser-lift off equipment should be modified to fit to remove at the interface below AlN layers. By improvement of crystalline quality of AlN layers as well as development of hetero-structures for laser-lift off, over several mW emission has been achieved. In addition, Si substrates were used as substrates on trial. Crystalline quality and crack formation were improved, and removing Si substrates by wet etching was demonstrated.
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