| Project/Area Number |
21360017
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Tohoku University |
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Principal Investigator |
SUEMITSU Maki 東北大学, 電気通信研究所, 教授 (00134057)
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| Co-Investigator(Kenkyū-buntansha) |
FUKIDOME Hirokazu 東北大学, 電気通信研究所, 准教授 (10342841)
ENTA Yoshiharu 弘前大学, 理工学部, 准教授 (20232986)
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| Project Period (FY) |
2009 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥19,630,000 (Direct Cost: ¥15,100,000、Indirect Cost: ¥4,530,000)
Fiscal Year 2011: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2010: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2009: ¥17,160,000 (Direct Cost: ¥13,200,000、Indirect Cost: ¥3,960,000)
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| Keywords | グラフェン / エピタキシャルグラフェン / ステップ / 表面微細加工 / 表面終端 / 電子物性 / 半導体 / 金属 / ナノリボン |
|---|
| Research Abstract |
We have studied in detail the impacts of surface microstructures of substrates on the quality and the electronic structure of the epitaxial graphene (EG)formed on them. As a result, we established a method to control the surface steps on Si and SiC substrates, and succeeded in the betterment of EG quality and in controlling the Si-and C-termination of 3C-SiC(111)surfaces. Moreover, it was found that EGs on Si-terminated and C-terminated SiC(111)surfaces show semiconducting and metallic properties, respectively. This finding surely provides a novel method to control the graphene electronic properties, which can be applied to fabrication of graphene devices.
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