Study on spin dependent ballistic electron mapping and spin injectioninto semiconductors

• Project/Area Number: 21360023
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Osaka University
• Principal Investigator: HASEGAWA Shigehiko 大阪大学, 産業科学研究所, 准教授 (50189528)
• Co-Investigator(Kenkyū-buntansha): ZHOU Yikai 大阪大学, 産業科学研究所, 助教 (60346179) ; ASAHI Hajime 大阪大学, 産業科学研究所, 特任教授 (90192947)
• Project Period (FY): 2009 – 2012
• Project Status: Completed (Fiscal Year 2012)
• Budget Amount: ¥18,070,000 (Direct Cost: ¥13,900,000、Indirect Cost: ¥4,170,000); Fiscal Year 2012: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000); Fiscal Year 2011: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000); Fiscal Year 2010: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000); Fiscal Year 2009: ¥9,750,000 (Direct Cost: ¥7,500,000、Indirect Cost: ¥2,250,000)
• Keywords: 走査型トンネル顕微鏡 / スピンエレクトロニクス / 分子線エピタキシー / 希薄磁性半導体 / トンネル現象 / スピン依存状態密度 / ショットキー接合 / 界面・表面物性 / スピン偏極 / 走査型プローブ顕微鏡 / 表面・界面物性 / MBE(分子線エピタキシー)

Research Abstract

We have investigated structural, electrical, and magnetic properties both of ferromagnetic electrodes on GaN as spin injectors and of III-nitride based dilute semiconductors as spin detectors toward development of ballistic electron emission mapping measurement.

Research Products

• [Journal Article] Growth parameter dependence of structural, electrical and magnetic properties in GaGdNlayers grown on GaN(0001) (2013)
  • Author(s): S. Sano, S. Hasegawa, Y. Mitsuno, K. Higashi, M. Ishimaru, T. Sakurai, H. Ohta, H. Asahi
  • Journal Title: J. Crystal Growth
  • Peer Reviewed
• [Journal Article] Photoluminescence properties in GaGdN grown on GaN(0001) by PA-MBE (2013)
  • Author(s): K. Higashi, S. Hasegawa, S. Sano, Y. K. Zhou, H. Asahi
  • Journal Title: J. Crystal Growth
  • Peer Reviewed
• [Journal Article] Growth parameter dependence of structural, electrical and magnetic properties in GaGdN layers grown on GaN(0001) (2013)
  • Author(s): S. Sano
  • Journal Title: J. Crystal Growth Volume: in press Pages: 314-318
  • DOI: 10.1016/j.jcrysgro.2012.12.106
  • Peer Reviewed
• [Journal Article] Observation of large Zeeman splitting in GaGdN/AlGaN ferromagnetic semiconductor double quantum well superlattices (2012)
  • Author(s): Y. K. Zhou, M. Almokhtar, H. Kubo, N.Mori, S. Emura, S. Hasegawa, H. Asahi
  • Journal Title: Solid State Commun Volume: 162 Pages: 1270-1273
  • Peer Reviewed
• [Journal Article] Coherent growth of GaGdN layers with high Gd concentration on GaN(0001) (2012)
  • Author(s): K. Higashi, S. Hasegawa, D. Abe, Y. Mitsuno, S. Komori, F. Ishikawa, M. Ishimaru, and H. Asahi
  • Journal Title: Appl. Phys. Lett Volume: 101 Pages: 221902-221902
  • Peer Reviewed
• [Journal Article] Strong atomic ordering in Gd-doped GaN (2012)
  • Author(s): M. Ishimaru, K. Higashi, S. Hasegawa, H. Asahi, K. Sato, and T. J. Konno
  • Journal Title: Appl. Phys. Lett Volume: 101 Pages: 101912-101912
  • Peer Reviewed
• [Journal Article] Structural, magnetic and optical studies of ultrathin GaGdN/AlGaN multiquantum well structure (2012)
  • Author(s): M. Almokhtar, S. Emura, Y. K. Zhou, S.Hasegawa, and H. Asahi
  • Journal Title: phys. stat. sol.(c) Volume: 9 Pages: 737-740
  • Peer Reviewed
• [Journal Article] Effect of growth conditions on magnetic and structural properties in Gd-doped GaN layers grown by plasma-assisted molecular beam epitaxy (2012)
  • Author(s): S. Hasegawa, S. Komori, K. Higashi, D.Abe, Y.-K. Zhou, and H. Asahi
  • Journal Title: phys. stat. sol. (c) Volume: 9 Pages: 741-744
  • Peer Reviewed
• [Journal Article] Observation of large Zeeman splitting in GaGdN/AlGaN ferromagnetic semiconductor double quantum well superlattices (2012)
  • Author(s): Yi Kai Zhou
  • Journal Title: Solid State Commun. Volume: 152 Issue: 14 Pages: 1270-1273
  • DOI: 10.1016/j.ssc.2012.02.026
  • Peer Reviewed
• [Journal Article] Coherent growth of GaGdN layers with high Gd concentration on GaN(0001) (2012)
  • Author(s): K. Higashi
  • Journal Title: Appl. Phys. Lett. Volume: 101 Issue: 22
  • DOI: 10.1063/1.4767992
  • Peer Reviewed
• [Journal Article] Rare-earth doped III-nitride semiconductors for semiconductor spintronics (2012)
  • Author(s): Hajime Asahi
  • Journal Title: J. Luminescence Volume: 132 Issue: 12 Pages: 3136-3140
  • DOI: 10.1016/j.jlumin.2011.11.033
  • Peer Reviewed
• [Journal Article] Strong atomic ordering in Gd-doped GaN (2012)
  • Author(s): Manabu Ishimaru
  • Journal Title: Appl. Phys. Lett. Volume: 101 Issue: 10
  • DOI: 10.1063/1.4751245
  • Peer Reviewed
• [Journal Article] Structural, magnetic and optical studies of ultrathin GaGdN/AlGaN multiquantum well structure (2012)
  • Author(s): Mohamed Almokhtar
  • Journal Title: phys. stat. sol. (c) Volume: 9 Issue: 2 Pages: 737-740
  • DOI: 10.12693/aphyspola.123.473
  • Peer Reviewed
• [Journal Article] Growth of Gd-doped InGaN/GaN multiple quantum wells and their characterization (2011)
  • Author(s): S.Hasegawa
  • Journal Title: Physica Status Solidi C Volume: 8 Issue: 7-8 Pages: 2047-2049
  • DOI: 10.1002/pssc.201001022
  • Peer Reviewed
• [Journal Article] Large magneto-optical effect in low-temperature-grown GaDyN (2011)
  • Author(s): Y.K.Zhou
  • Journal Title: Physica Status Solidi C Volume: 8 Issue: 7-8 Pages: 2173-2175
  • DOI: 10.1002/pssc.201001021
  • Peer Reviewed
• [Journal Article] GaGdN/AlGaN multiple quantum disks grown by RF-plasma-assisted molecular-beam epitaxy (2011)
  • Author(s): H.Tambo
  • Journal Title: Physica Status Solidi A Volume: 208 Issue: 7 Pages: 1576-1578
  • DOI: 10.1002/pssa.201000928
  • Peer Reviewed
• [Journal Article] Photoluminescence from exciton-polarons in GaGdN/AlGaN multiquantum wells (2011)
  • Author(s): M.Almokhtar
  • Journal Title: Journal of Physics : Condensed Matters Volume: 23 Issue: 32 Pages: 325802-325802
  • DOI: 10.1088/0953-8984/23/32/325802
  • Peer Reviewed
• [Journal Article] Structural characterization of MBE grown InGaGdN/GaN and InGaN/GaGdN superlattice structures (2011)
  • Author(s): D.Krishnamurthy
  • Journal Title: Physica Status Solidi C Volume: 8 Issue: 7-8 Pages: 2245-2247
  • DOI: 10.1002/pssc.201001024
  • Peer Reviewed
• [Journal Article] Growth and characterization of GaN-based dilute magnetic semiconductors (2011)
  • Author(s): S.Hasegawa
  • Journal Title: Proceedings of Asia-Pacific Workshop on Materials Characterization Pages: 6-10
• [Journal Article] Growth and characterization of transition-metal and rare-earth doped III-nitride semiconductors for spintronics (2011)
  • Author(s): H.Asahi
  • Journal Title: MRS Proceedings Volume: 1290
  • Peer Reviewed
• [Journal Article] Carrier-mediated ferromagnetism in InGaGdN grown by plasma-assisted molecular beam epitaxy (2011)
  • Author(s): S.N.M.Tawil
  • Journal Title: Proceedings of the 23rd International Conference on Indium Phosphide and Related Materials Pages: 252-255
• [Journal Article] Influence of Si-doping on the characteristics of InGaGdN/GaN MQWs grown by MBE (2011)
  • Author(s): S.N.M.Tawil
  • Journal Title: Phys.Stat.Sol.C Volume: 8 Issue: 2 Pages: 491-493
  • DOI: 10.1002/pssc.201000484
  • Peer Reviewed
• [Journal Article] Defect structure of MBE-grown GaCrN diluted magnetic semiconductor films (2011)
  • Author(s): A.Yabuuchi
  • Journal Title: Journal of Physics : Conference Series Volume: 262 Pages: 012066-012066
  • DOI: 10.1088/1742-6596/262/1/012066
  • Peer Reviewed
• [Journal Article] Co-ordination alignments at the vicinity of the dopant Cr ions in AlN (2011)
  • Author(s): S.Emura
  • Journal Title: Phys.Status Solidi C Volume: 8 Issue: 2 Pages: 473-475
  • DOI: 10.1002/pssc.201000499
  • Peer Reviewed
• [Journal Article] Structural and Magnetic Properties of Diluted Magnetic Semiconductor GaGdN Nanorods (2011)
  • Author(s): H.Tambo
  • Journal Title: Phys.Status Solidi C Volume: 8 Issue: 2 Pages: 494-496
  • DOI: 10.1002/pssc.201000486
  • Peer Reviewed
• [Journal Article] Investigations on the properties of intermittently Gd-doped InGaN structures grown by molecular-beam epitaxy (2011)
  • Author(s): D.Krishnamurthy
  • Journal Title: Phys.Stat.Sol.C Volume: 8 Issue: 2 Pages: 497-499
  • DOI: 10.1002/pssc.201000440
  • Peer Reviewed
• [Journal Article] Studies on the InGaGdN/GaN magnetic semiconductor heterostructures grown by plasma-assisted molecular-beam epitaxy (2011)
  • Author(s): S.N.M.Tawil
  • Journal Title: J.Cryst.Growth Volume: 323 Issue: 1 Pages: 351-354
  • DOI: 10.1016/j.jcrysgro.2010.11.166
  • Peer Reviewed
• [Journal Article] Structural and magnetic properties of GaGdN/GaN superlattice structures (2010)
  • Author(s): Y. K. Zhou, S. W. Choi, S. Kimura, S. Emura, S. Hasegawa, and H. Asahi
  • Journal Title: Thin Solid Films Volume: 518 Pages: 5659-5661
  • Peer Reviewed
• [Journal Article] Characterization of InGaGdN layers prepared by molecular beam epitaxy (2010)
  • Author(s): Siti Nooraya Mohd Tawil, Shigehiko Hasegawa
  • Journal Title: Phys.Status Solidi RRL Volume: 4 Pages: 308-310
  • Peer Reviewed
• [Journal Article] Growth and characterization of Fe nanostructures on GaN (2009)
  • Author(s): Y. Honda, S. Hayakawa, S. Hasegawa, H. Asahi
  • Journal Title: Appl. Surf. Sci Volume: 256 Pages: 1069-1072
  • Peer Reviewed
• [Journal Article] Growth and characterization of Fe nanostructures on GaN (2009)
  • Author(s): Y.Honda
  • Journal Title: Appl.Surf.Sci. 256 Pages: 1069-1072
  • Peer Reviewed
• [Presentation] GaN(0001)表面上へのCo薄膜の成長とその評価 (2013)
  • Author(s): 山口明哲
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学
• [Presentation] AlGaN/GaGdN多重量子井戸構造の形成とその磁気特性 (2013)
  • Author(s): 佐野壮太
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学
• [Presentation] 希薄磁性半導体GaGdNの電気的および磁気的特性の成長条件依存性 (2012)
  • Author(s): 佐野壮太
  • Organizer: 第59回応用物理学会関係連合講演会
  • Place of Presentation: 早稲田大学
  • Year and Date: 2012-03-17
• [Presentation] GaN(0001)表面上へのCo/Fe多層膜の形成とその磁気特性 (2012)
  • Author(s): 山口明哲
  • Organizer: 第59回応用物理学会関係連合講演会
  • Place of Presentation: 早稲田大学
  • Year and Date: 2012-03-17
• [Presentation] MBE Growth and Characterization of GaN-based Dilute Magnetic Semiconductor Nanostructures (2012)
  • Author(s): S. Hasegawa, Y.-K. Zhou, and H. Asahi
  • Organizer: 2012 Collaborative Conference on Crystal Growth (3CG)
  • Place of Presentation: Orlando, USA
• [Presentation] Growth and characterization of III-nitride based dilute magnetic semiconductors and their nanostructures (2012)
  • Author(s): S. Hasegawa, Y.-K. Zhou, and H. Asahi
  • Organizer: 2012 Energy Materials Nanotechnology Fall Meeting
  • Place of Presentation: Chengdu, China
• [Presentation] Novel properties in GaN-based ferromagnetic semiconductor quantum wells (2012)
  • Author(s): Y. K. Zhou, Y. Nakatani, M. Sano, S. Emura,S. Hasegawa, H. Asahi
  • Organizer: Villa Conference on Energy, Materials, and Nanotechnology 2012
  • Place of Presentation: Orlando, USA
• [Presentation] Magnetic Properties of Iron Nitride Thin Films Grown on GaN(0001) Surfaces (2012)
  • Author(s): M. Yoneoka, S. Hasegawa, H. Ichihara, A. Beppu, H. Yamaguchi, H. Asahi
  • Organizer: The 15th SANKEN International Symposium 2012, The 10th SANKEN Nanotechnology Symposium
  • Place of Presentation: Osaka
• [Presentation] GaN(0001)表面上への窒化鉄薄膜形成とその評価 (2012)
  • Author(s): 米岡賢,市原寛也,別府亜由美,山口明哲,長谷川繁彦, 朝日一
  • Organizer: 第59回応用物理学会関係連合講演会
  • Place of Presentation: 早稲田大学
• [Presentation] MBE Growth and Characterization of GaN-based Dilute Magnetic Semiconductor Nanostructures (2012)
  • Author(s): Shigehiko Hasegawa
  • Organizer: 2012 Collaborative Conference on Crystal Growth
  • Place of Presentation: Orlando, USA
  • Invited
• [Presentation] Growth and Characterization of Dilute Magnetic Semiconductor GaGdN Nanorods Grown on Si (2012)
  • Author(s): Shigehiko Hasegawa
  • Organizer: International Workshop on Nitride Semiconductors 2012
  • Place of Presentation: Sapporo
• [Presentation] Growth parameter dependence of structural, electrical and magnetic properties in GaGdN layers grown on GaN(0001) (2012)
  • Author(s): S. Sano
  • Organizer: The 17th International Conference on Molecular Beam Epitaxy
  • Place of Presentation: Nara
• [Presentation] Photoluminescence Properties in GaGdN grown on GaN(0001) by PA-MBE (2012)
  • Author(s): K. Higashi
  • Organizer: The 17th International Conference on Molecular Beam Epitaxy
  • Place of Presentation: Nara
• [Presentation] AlGaN/GaGdN 多重量子井戸構造形成による GaGdN 自然超格子の制御 (2012)
  • Author(s): 東晃太朗
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学，松山大学
• [Presentation] Effects of the morphology of Fe thin films grown on GaN(0001) on their magnetic properties (2011)
  • Author(s): H.Ichihara
  • Organizer: The 6th International Symposium on Surface Science
  • Place of Presentation: Tower Hall Funabori, Tokyo
  • Year and Date: 2011-12-14
• [Presentation] Growth of Co thin films on GaN(0001) and their magnetic properties (2011)
  • Author(s): A.Beppu
  • Organizer: The 6th International Symposium on Surface Science
  • Place of Presentation: Tower Hall Funabori, Tokyo
  • Year and Date: 2011-12-14
• [Presentation] Growth and characterization of GaDyN/AlGaN multi-quantum well structures (2011)
  • Author(s): Y.Nakatani
  • Organizer: The 6th International Symposium on Surface Science
  • Place of Presentation: Tower Hall Funabori, Tokyo
  • Year and Date: 2011-12-14
• [Presentation] Growth of Co thin films on GaN(0001) and their magnetic properties (2011)
  • Author(s): A. Beppu, S. Hasegawa, H. Ichihara, M. Yoneoka, H. Yamaguchi and H. Asahi
  • Organizer: The 6th Int.Symposium on Surface Science
  • Place of Presentation: Tokyo
  • Year and Date: 2011-11-15
• [Presentation] Effects of the morphology of Fe thin films grown on GaN(0001) on their magnetic properties (2011)
  • Author(s): H. Ichihara, S. Hasegawa, A. Beppu, M. Yoneoka, H. Yamaguchi and H. Asahi
  • Organizer: The 6th Int.Symposium on Surface Science
  • Place of Presentation: Tokyo
  • Year and Date: 2011-11-15
• [Presentation] Characterization of GaGdN/AlGaN/GaGdN Triple-layer Structures with High Gd Concentration for Tunneling Magnetoresistance Devices (2011)
  • Author(s): K.Higashi
  • Organizer: 2011 International Conference on Solid State Devices and Materials
  • Place of Presentation: Aichi Industry & Labor Center (Nagoya)
  • Year and Date: 2011-09-29
• [Presentation] Formation of nitrogen vacancy adjoining to Gd ion doped in GaN (2011)
  • Author(s): D.Abe
  • Organizer: 2011 International Conference on Solid State Devices and Materials
  • Place of Presentation: Aichi Industry & Labor Center (Nagoya)
  • Year and Date: 2011-09-29
• [Presentation] Growth and characterization of GaN-based dilute magnetic semiconductors (2011)
  • Author(s): S.Hasegawa
  • Organizer: Asia-Pacific Workshop on Materials Characterization
  • Place of Presentation: Anna University (Chennai, India)(招待講演)
  • Year and Date: 2011-09-22
• [Presentation] Rare-earth doped III-nitride semiconductors for semiconductor spintronics (2011)
  • Author(s): H.Asahi
  • Organizer: European Materials Research Society Fall 2011 Meeting
  • Place of Presentation: Warsaw University of Technology (Warsaw, Poland)(招待講演)
  • Year and Date: 2011-09-21
• [Presentation] 高濃度Gd添加GaGdNにおける自然超格子の形成(2) (2011)
  • Author(s): 東晃太朗
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学
  • Year and Date: 2011-08-30
• [Presentation] GaN(0001)表面上へのFe薄膜の成長とその磁気特性 (2011)
  • Author(s): 市原寛也
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学
  • Year and Date: 2011-08-30
• [Presentation] Effect of growth conditions on magnetic and structural properties in Gd-doped GaN layers grown by plasma-assisted molecular beam epitxay (2011)
  • Author(s): S.Hasegawa
  • Organizer: 9th International Conference on Nitride Semiconductors
  • Place of Presentation: Scottish Exhibition and Conference Centre (Glasgow, UK)
  • Year and Date: 2011-07-13
• [Presentation] New photoluminescence from GaGdN/Al0.12Ga0.88N multi-quantum well (2011)
  • Author(s): M.Almokhtar
  • Organizer: 9th International Conference on Nitride Semiconductors
  • Place of Presentation: Scottish Exhibition and Conference Centre (Glasgow, UK)
  • Year and Date: 2011-07-12
• [Presentation] Two-dimensional growth of Fe films on GaN(0001)surfaces and its magnetic properties (2011)
  • Author(s): H.Ichihara
  • Organizer: 30th Electronic Materials Symposium
  • Place of Presentation: ラフォーレ琵琶湖(守山)
  • Year and Date: 2011-07-01
• [Presentation] Self-formation of Natural Superlattice in High Gd Concentration GaGdN (2011)
  • Author(s): K.Higashi
  • Organizer: 30th Electronic Materials Symposium
  • Place of Presentation: ラフォーレ琵琶湖(守山)
  • Year and Date: 2011-06-30
• [Presentation] Carrier-mediated ferromagnetism in InGaGdN grown by plasma-assisted molecular beam epitaxy (2011)
  • Author(s): S.N.M.Tawil
  • Organizer: 23rd International Conference on Indium Phosphide and Related Materials
  • Place of Presentation: Maritim proArte Hotel (Berlin, Germany)
  • Year and Date: 2011-05-24
• [Presentation] Large Zeeman splitting in GaGdN/AlGaN magnetic semiconductor double quantum well superlattices (2011)
  • Author(s): Y.K.Zhou
  • Organizer: 5th Asia-Pacific Workshop on Widegap Semiconductors
  • Place of Presentation: Toba Hotel International (Toba, Mie)
  • Year and Date: 2011-05-23
• [Presentation] Growth and characterization of GaN-based dilute magnetic semicondcutors and their nanostructures (2011)
  • Author(s): S.Hasegawa
  • Organizer: 2011 Villa Conference on Interactions Among Nanostructures
  • Place of Presentation: Red Rock Resort (Las Vegas, Nevada, USA)(招待講演)
  • Year and Date: 2011-04-23
• [Presentation] 高濃度Gd添加GaGdNにおける自然超格子の形成 (2011)
  • Author(s): 東晃太郎, 長谷川繁彦
  • Organizer: 第58回応用物理学会関係連合講演会
  • Place of Presentation: 神奈川工科大学
  • Year and Date: 2011-03-26
• [Presentation] 希薄磁性半導体GaGdN薄膜構造あ成長条件依存性 (2011)
  • Author(s): 満野陽介, 長谷川繁彦
  • Organizer: 第58回応用物理学会関係連合講演会
  • Place of Presentation: 神奈川工科大学
  • Year and Date: 2011-03-26
• [Presentation] GaN(0001)表面上へのFeの二次元成長 (2011)
  • Author(s): 市原寛, 長谷川繁彦
  • Organizer: 第58回応用物理学会関係連合講演会
  • Place of Presentation: 神奈川工科大学
  • Year and Date: 2011-03-25
• [Presentation] GaN(0001)表面上の酸化鉄薄膜の形成と評価 (2011)
  • Author(s): 別府亜由美, 長谷川繁彦
  • Organizer: 第58回応用物理学会関係連合講演会
  • Place of Presentation: 神奈川工科大学
  • Year and Date: 2011-03-25
• [Presentation] GaN(0001)表面上へのCo薄膜の成長とその評価 (2011)
  • Author(s): 山口明哲,米岡賢, Nurassyakirin Bin Hasbi,長谷川繁彦
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学
• [Presentation] Growth and characterization of GaN-based dilute magnetic semiconductors (2011)
  • Author(s): S. Hasegawa and H. Asahi
  • Organizer: Asia-Pacific Workshop on Materials Characterization
  • Place of Presentation: Chennai, India
• [Presentation] Effect of growth conditions on magnetic and structural properties in Gd-doped GaN layers grown by plasma-assisted molecular beam epitaxy (2011)
  • Author(s): S. Hasegawa, S. Komori, K. Higashi, D. Abe, Y.K. Zhou, and H. Asahi
  • Organizer: 9th International Conference on Nitride Semiconductors
  • Place of Presentation: Glasgow, U
• [Presentation] Growth and characterization of GaN-based dilute magnetic semicondcutors and their nanostructures (2011)
  • Author(s): S. Hasegawa, Y.K. Zhou, S. Emura, and H. Asahi
  • Organizer: 2011 Villa Conference on Interactions Among Nanostructures (VCIAN)
  • Place of Presentation: Red Rock Casino, Resort and Spa, Las Vegas, Nevada, USA
• [Presentation] GaN(0001)表面上の窒化鉄薄膜形成とその磁気特性 (2011)
  • Author(s): 米岡賢,市原寛也,別府亜由美,山口明哲,長谷川繁彦, 朝日一
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学
• [Presentation] GaN(0001)表面上の窒化鉄薄膜の形成と評価 (2011)
  • Author(s): 米岡賢,古屋貴明,市原寛也,別府亜由美,長谷川繁彦, 朝日一
  • Organizer: 第58回応用物理学会関係連合講演会
  • Place of Presentation: 神奈川工科大学
• [Presentation] Magnetic properties of Fe/Fe oxide core-shell clusters formed on GaN(0001) (2010)
  • Author(s): T.Furuya, S.Hasegawa
  • Organizer: 18th International Colloquium on Scanning Probe Microscopy
  • Place of Presentation: 伊豆熱川 熱川ハイツ
  • Year and Date: 2010-12-09
• [Presentation] Growth and characterization of transition-metal and rare-earth doped III-nitridesemiconductors for spintronics (2010)
  • Author(s): H.Asahi, S.Hasegawa
  • Organizer: 2010 Materials Research Society (MRS) Fall Meeting
  • Place of Presentation: Boston (USA)(招待講演)
  • Year and Date: 2010-11-30
• [Presentation] Feナノドットの磁気抵抗効果 (2010)
  • Author(s): 市原寛, 長谷川繁彦
  • Organizer: 第30回表面科学学術講演会
  • Place of Presentation: 大阪大学コンベンションセンター
  • Year and Date: 2010-11-05
• [Presentation] Magnetotransport properties in Gd-doped GaN grown by plasma-assisted molecular beam epitaxy (2010)
  • Author(s): S.Hasegawa
  • Organizer: International Workshop on Nitride semiconductors IWN2010
  • Place of Presentation: Tampa (USA)
  • Year and Date: 2010-09-22
• [Presentation] Growth of Gd-doped InGaN/GaN multiple quantum wells and their characterization (2010)
  • Author(s): S.Hasegawa
  • Organizer: International Workshop on Nitride semiconductors IWN2010
  • Place of Presentation: Tampa (USA)
  • Year and Date: 2010-09-20
• [Presentation] 希薄磁性半導体GaGdNおよびGaGdN/AlGaNヘテロ講造の電気特性と磁気特性評価 (2010)
  • Author(s): 安部大治郎, 長谷川繁彦
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学
  • Year and Date: 2010-09-16
• [Presentation] 逆格子空間マッピングを用いたGaGdNの構造解析 (2010)
  • Author(s): 東晃太朗, 長谷川繁彦
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学
  • Year and Date: 2010-09-14
• [Presentation] Magnetic property of Fe/Fe oxide core-shell clusters formed on GaN (0001) (2010)
  • Author(s): T.Furuya, S.Hasegawa
  • Organizer: 6th Handai Nanoscinece and Nanotechnology International Symposium
  • Place of Presentation: 大阪大学コンベンションセンター
  • Year and Date: 2010-06-01
• [Presentation] Ga(Gd)NIAlGaN三重障壁共鳴トンネルダイオードの作製 (2010)
  • Author(s): 東晃太朗
  • Organizer: 第57回応用物理学会関係連合講演会
  • Place of Presentation: 東海大学(神奈川県)
  • Year and Date: 2010-03-19
• [Presentation] 希薄磁性半導体GaGdNおよびGaGdN/AlGaNヘテロ構造の電気的特性評価 (2010)
  • Author(s): 安部大治郎
  • Organizer: 第57回応用物理学会関係連合講演会
  • Place of Presentation: 東海大学(神奈川県)
  • Year and Date: 2010-03-19
• [Presentation] GaN (0001)基板上に形成したFe/Fe酸化物コアシェルクラスターの磁化特性 (2010)
  • Author(s): 古屋貴明
  • Organizer: 第57回応用物理学会関係連合講演会
  • Place of Presentation: 東海大学(神奈川県)
  • Year and Date: 2010-03-18
• [Presentation] 磁場印加中におけるFeナノドットのスピン偏極STM観察 (2010)
  • Author(s): 市原寛也
  • Organizer: 第57回応用物理学会関係連合講演会
  • Place of Presentation: 東海大学(神奈川県)
  • Year and Date: 2010-03-18
• [Presentation] 低温成長GaCrNの作製とその評価 (2010)
  • Author(s): 樊鵬瀚
  • Organizer: 第57回応用物理学会関係連合講演会
  • Place of Presentation: 東海大学(神奈川県)
  • Year and Date: 2010-03-17
• [Presentation] MBE Growth of GaGdN/AlGaN Multiple Quantum Wells and Their Magnetic Properties (2010)
  • Author(s): S.Hasegawa
  • Organizer: 13th SANKEN International Symposium 2010
  • Place of Presentation: 関西空港国際会議場(大阪府)
  • Year and Date: 2010-01-18
• [Presentation] Magnetic properties of Fe/Fe oxide core-shell clusters formed on GaN(0001) (2010)
  • Author(s): T. Furuya, M. Sotani, H. Ichihara, S. Hasegawa, H. Asahi
  • Organizer: 18th International Colloquium on Scanning Probe Microscopy (ICSPM18)
  • Place of Presentation: Atagawa
• [Presentation] Magnetotransport properties in Gd-doped GaN grown by plasma-assisted molecular beam epitaxy (2010)
  • Author(s): S. Hasegawa, M. Kin, D. Abe, K. Higashi, Y.K. Zhou and H. Asahi
  • Organizer: International Workshop on Nitride semiconductors (IWN2010)
  • Place of Presentation: Tampa, Florida, U.S.A
• [Presentation] Feナノドットの磁気抵抗効果 (2010)
  • Author(s): 市原寛也,古屋貴明,別府亜由美,米岡賢,長谷川繁彦,朝日一
  • Organizer: 第30回表面科学学術講演会
  • Place of Presentation: 大阪大学
• [Presentation] GaN(0001)基板上に形成したFeクラスターの電流磁気効果 (2010)
  • Author(s): 古屋 貴明, 市原 寛也, 長谷川 繁彦, 朝日 一
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学
• [Presentation] 磁場印加中におけるFeナノドットのスピン偏極STM観察 (2010)
  • Author(s): 市原寛也,曽谷基紀,古屋貴明,長谷川繁彦,朝日一
  • Organizer: 第57回応用物理学会関係連合講演会
  • Place of Presentation: 東海大学
• [Presentation] 希薄磁性半導体GaGdNの作製とその物性評価 (2009)
  • Author(s): 谷弘敦
  • Organizer: 第50回真空に関する連合講演会
  • Place of Presentation: 学習院大学(東京都)
  • Year and Date: 2009-11-04
• [Presentation] 活性窒素雰囲気中アニールにより清浄化したGaN上へのFeナノドット形成と磁性評価 (2009)
  • Author(s): 曽谷基紀
  • Organizer: 第29回表面科学学術講演会
  • Place of Presentation: タワーホール船越(東京都)
  • Year and Date: 2009-10-28
• [Presentation] Growth and characterization of GaGdN/AlGaN heterostructures (2009)
  • Author(s): M.Kin
  • Organizer: 5th Handai Nanoscinece and Nanotechnology International Symposium
  • Place of Presentation: 大阪大学(大阪府)
  • Year and Date: 2009-09-02
• [Presentation] Structural and optical properties of rare-earth element Gd doped GaN (2009)
  • Author(s): H.Tani
  • Organizer: 5th Handai Nanoscinece and Nanotechnology International Symposium
  • Place of Presentation: 大阪大学(大阪府)
  • Year and Date: 2009-09-02
• [Presentation] Enhancement of saturation magnetization in GaGdN/AlGaN multiple quantum wells grown by PA-MBE (2009)
  • Author(s): S.Hasegawa
  • Organizer: 14th International Conference on Modulated Semiconductor Structures
  • Place of Presentation: 神戸国際会議場(兵庫県)
  • Year and Date: 2009-07-21
• [Remarks]
  • URL: http://www.sanken.osaka-u.ac.jp/labs/pem/