Study on dielectric constant of ultrathin SiO2 by using XPS and first-principles calculation
| Project/Area Number |
21360025
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Japan Aerospace Exploration Agency |
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Principal Investigator |
HIROSE Kazuyuki 独立行政法人宇宙航空研究開発機構, 宇宙科学研究所, 准教授 (00280553)
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| Co-Investigator(Renkei-kenkyūsha) |
NOHIRA Hiroshi 東京都市大学, 工学部, 教授 (30241110)
KOBAYASHI Daisuke 独立行政法人宇宙航空研究開発機構, 宇宙科学研究所, 助教 (90415894)
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| Project Period (FY) |
2009 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥16,250,000 (Direct Cost: ¥12,500,000、Indirect Cost: ¥3,750,000)
Fiscal Year 2011: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
Fiscal Year 2010: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2009: ¥8,060,000 (Direct Cost: ¥6,200,000、Indirect Cost: ¥1,860,000)
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| Keywords | 界面 / 誘電率 / 光電子分光 / シリコン / 酸化膜S / 表面 / シリコン酸化膜 / 第一原理計算 / 第一原理計 |
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| Research Abstract |
By using XPS, we revealed that dielectric constant values of ultrathin SiO_2 films formed on Si substrates depend on the orientation of the Si substrates. First principles calculation suggested that the reason is different interface atomic structures formed at the SiO_2/Si interfaces.
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Report
(4 results)
Research Products
(63 results)
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[Presentation] シリコン技術2010
Author(s)
平本俊郎, 一木隆範, 井谷俊郎, 内田建, 小田中紳二, 金田千穂子, 坂本邦博, 新宮原正三, 高橋庸夫, 辰巳哲也, 廣瀬和之, 三浦喜直, 水野文二, 宮崎誠一, 森伸也
Organizer
第57回応用物理学関係連合講演会
Place of Presentation
平塚市
Related Report
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