Development of Low-Voltage Semiconductor Mach-Zehnder modulator with single Microring resonator

• Project/Area Number: 21360030
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Applied optics/Quantum optical engineering
• Research Institution: Yokohama National University
• Principal Investigator: ARAKAWA Taro 横浜国立大学, 工学研究院, 准教授 (40293170)
• Co-Investigator(Kenkyū-buntansha): KOKUBUN Yasuo 横浜国立大学, 工学研究院, 教授 (60134839) ; TADA Kunio 金沢工業大学, 工学研究科, 教授 (00010710)
• Project Period (FY): 2009 – 2011
• Project Status: Completed (Fiscal Year 2011)
• Budget Amount: ¥18,460,000 (Direct Cost: ¥14,200,000、Indirect Cost: ¥4,260,000); Fiscal Year 2011: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000); Fiscal Year 2010: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000); Fiscal Year 2009: ¥8,840,000 (Direct Cost: ¥6,800,000、Indirect Cost: ¥2,040,000)
• Keywords: 光変調器 / 量子井戸 / マイクロリング共振器 / 化合物半導体 / マッハ・ツェンダー干渉計 / 光スイッチ / 位相変調 / 論理ゲート / マイクリロング / マッハ・ツェンダー光変調器

Research Abstract

We have proposed and developed a novel Mach-Zehnder optical modulator using a large electric field induced refractive index change in special ultrathin semiconductor films and a phase shift enhancement effect in microring resonators. As a result, we succeeded in realizing a very low driving voltage optical modulator due to the synergy between the above two effects.

Research Products

• [Journal Article] Low-Voltage Mach-Zehnder Modulator with InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well (2012)
  • Author(s): T.Arakawa
  • Journal Title: Jpn.J.Appl.Phys. Volume: vol.51, no.4 Issue: 4R Pages: 042203-042203
  • DOI: 10.1143/jjap.51.042203
  • NAID: 40019231092
  • Peer Reviewed
• [Journal Article] InGaAs/InAlAs Quantum Well Mach-Zehnder Modulator with Single Microring Resonator (2012)
  • Author(s): Hiroki Kaneshige, Yuta Ueyama, Hitoshi Yamada, Hideki Yajima, Taro Arakawa, and Yasuo Kokubun
  • Journal Title: Jpn. J. Appl. Phys., Special Issue on SSDM Volume: vol.51, no.2 Issue: 2S Pages: 02BG01-02BG01
  • DOI: 10.1143/jjap.51.02bg01
  • Peer Reviewed
• [Journal Article] Microring Resonator Wavelength Tunable Filter Using Five-Layer Asymmetric Coupled Ouantum Well (2011)
  • Author(s): T.Makino
  • Journal Title: IEEE/OSA J.Lightwave Technolgy Volume: vol.29, no.16 Issue: 16 Pages: 2387-2393
  • DOI: 10.1109/jlt.2011.2159775
  • Peer Reviewed
• [Journal Article] Analysis of electrorefractive index change in Ge/SiGe coupled quantum well for low-voltage silicon-based optical modulators (2011)
  • Author(s): Y.Iseri
  • Journal Title: Physica E Volume: vol.43 Issue: 8 Pages: 1433-1438
  • DOI: 10.1016/j.physe.2011.03.021
  • Peer Reviewed
• [Journal Article] InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well Exhibiting Giant Electrorefractive Index Change (2011)
  • Author(s): T. Arakawa, T. Toya, M. Ushigome, K. Yamaguchi, T. Ide and K. Tada
  • Journal Title: Jpn. J. Appl. Phys Volume: vol.50, no.3 Issue: 3R Pages: 32204-32204
  • DOI: 10.1143/jjap.50.032204
  • NAID: 210000070098
  • Peer Reviewed
• [Journal Article] InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well Exhibiting Giant Electrorefractive Index Change (2011)
  • Author(s): T.Arakawa
  • Journal Title: Jpn.J.Appl.Phys. Volume: vol.50, no.3 Pages: 32204-32204
  • NAID: 210000070098
  • Peer Reviewed
• [Journal Article] Influence of Heterointerface Abruptness on Electrorefractive Effect in InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well (2010)
  • Author(s): Y. Iseri, T. Arakawa, K. Tada, and N. Haneji
  • Journal Title: Jpn. J. Appl. Phys Volume: vol.49 no.4 Issue: 4S Pages: 04DG04-04DG04
  • DOI: 10.1143/jjap.49.04dg04
  • NAID: 210000068285
  • Peer Reviewed
• [Journal Article] Influence of Heterointerface Abruptness on Electrorefractive Effect inInGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well (2010)
  • Author(s): Y.Iseri
  • Journal Title: Jpn.J.Appl.Phys. Volume: vol.49, no.4
  • Peer Reviewed
• [Journal Article] Influence of Heterointerface Abruptness on Electrorefractive Effect in InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well (2010)
  • Author(s): Y.Iseri
  • Journal Title: Jpn.J.Appl.Phys. (掲載確定)
  • Peer Reviewed
• [Journal Article] Electrorefractive Effect in GaInNAs/GaAs Five-Layer Asymmetric Coupled Quantum Well (2009)
  • Author(s): M. Fukuoka, T. Toya, Y. Sawai, T. Arakawa, and K. Tada
  • Journal Title: Jpn. J. Appl. Phys Volume: vol.48, no.4 Issue: 4S Pages: 04C154-04C154
  • DOI: 10.1143/jjap.48.04c154
  • NAID: 210000066665
  • Peer Reviewed
• [Journal Article] Electrorefractive Effect in GaInNAs/GaAs Five-Layer Asymmetric Coupled Quantum Well (2009)
  • Author(s): M.Fukuoka
  • Journal Title: Jpn.J.Appl.Phys.(Special issue on SSDM'08) vol. 48, no. 4
  • Peer Reviewed
• [Presentation] 量子井戸マイクロリングマッハ・ツェンダー変調器の設計と試作 (2012)
  • Author(s): 荒川太郎,國分泰雄
  • Organizer: 2012年電子情報通信学会総合大会
  • Place of Presentation: 岡山大学
  • Year and Date: 2012-03-20
• [Presentation] Quantum Well Mach-Zehnder Modulator with Single Microring Resonator and Optimized Arm Length (2011)
  • Author(s): H. Kaneshige, Y. Ueyama, H. Yamada, T. Arakawa, and Y. Kokubun
  • Organizer: 17th Microoptics Conference(MOC' 11)
  • Place of Presentation: Sendai
  • Year and Date: 2011-11-01
• [Presentation] Theoretical analysis of semiconductor double microring Mach-Zehnder modulator (2011)
  • Author(s): H.Yamada
  • Organizer: 17th Microoptics Conference (MOC'11)
  • Place of Presentation: Sendai International Center, Sendai
  • Year and Date: 2011-11-01
• [Presentation] Quantum well Mach-Zehder modulator with single microring resonator and optimize arm length (2011)
  • Author(s): H.Kaneshige
  • Organizer: 17th Microoptics Conference (MOC'11)
  • Place of Presentation: Sendai International Center, Sendai
  • Year and Date: 2011-11-01
• [Presentation] Fabrication and Characterization of InGaAs/InAlAs Multiple FACQW Structures with Larger Tolerance to Impurity in Intrinsic Layer (2011)
  • Author(s): Y. Amma and T. Arakawa
  • Organizer: 2011 International Conference on Solid State Devices and Materials(SSDM)
  • Place of Presentation: Nagoya
  • Year and Date: 2011-09-29
• [Presentation] Fabrication and Characterization of InGaAs/InAlAs Multiple FACQW Structures with Larger Tolerance to Impurity in Intrinsic Layer (2011)
  • Author(s): Y.Amma
  • Organizer: 2011 International Conference on Solid State Devices and Materials (SSDM)
  • Place of Presentation: Aichi Industry & Labor Center, Nagoya
  • Year and Date: 2011-09-29
• [Presentation] Low Voltage InGaAs/InAlAs Quantum Well Mach-Zehnder Modulator with Single Microring Resonator (2011)
  • Author(s): H. Kaneshige, Y. Ueyama, H. Yamada, T. Arakawa, and Y. Kokubun
  • Organizer: 2011 International Conference on Solid State Devices and Materials(SSDM)
  • Place of Presentation: Nagoya
  • Year and Date: 2011-09-28
• [Presentation] Low Voltage InGaAs/InAlAs Quantum Well Mach-Zehnder Modulator with Single Microring Resonator (2011)
  • Author(s): H.Kaneshige
  • Organizer: 2011 International Conference on Solid State Devices and Materials (SSDM)
  • Place of Presentation: Aichi Industry & Labor Center, Nagoya
  • Year and Date: 2011-09-28
• [Presentation] InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well for Low Voltage Optical Modulators (2011)
  • Author(s): T. Arakawa and K. Tada
  • Organizer: International Conference on Nanoscience, Engineering and Advanced Computing(ICNEAC 2011)
  • Place of Presentation: Narsapur, India
  • Year and Date: 2011-07-08
• [Presentation] InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well for Low Voltage Optical Modulators (2011)
  • Author(s): T.Arakawa
  • Organizer: International Conference on Nanoscience, Engineering and Advanced Computing (ICNEAC 2011)
  • Place of Presentation: Swamandhra College of Eng.and Technol., Narsapur, India(Invited)
  • Year and Date: 2011-07-08
• [Presentation] Low-Voltage Optical Modulatoars Based on Five-Layer Asymmetric Coupled Quantum Well (2011)
  • Author(s): K. Tada and T. Arakawa
  • Organizer: Book of Abstract of Workshop on Frontier Photonic and Electronic Materials
  • Place of Presentation: Granada, Spain
  • Year and Date: 2011-03-17
• [Presentation] Low-Voltage Optical Modulators Based on Five-Layer Asymmetric Coupled Quantum Well (2011)
  • Author(s): K.Tada
  • Organizer: Book of Abstract of Workshop on FrontierPhotonic and Electronic Materials
  • Place of Presentation: Granada, Spain
  • Year and Date: 2011-03-17
• [Presentation] Theoretical Analysis of Semiconductor Double Microring Mach-Zehnder Modulator (2011)
  • Author(s): H. Yamada, Y. Ueyama, T. Arakawa, and Y. Kokubun
  • Organizer: 17th Microoptics Conference(MOC' 11)
  • Place of Presentation: Sendai
• [Presentation] Influence of Intrinsic Layer Impurity in InGaAs/InAlAs Asymmetric Triple Coupled Quantum Well on Its Electro refractive Index Change (2010)
  • Author(s): Y. Amma, K. Ema, and T. Arakawa
  • Organizer: 2010 International Conference on Solid State Devices and Materials(SSDM)
  • Place of Presentation: Tokyo
  • Year and Date: 2010-09-23
• [Presentation] Modification of Material Parameters for InGaAs/InAlAs Quantum Wells (2010)
  • Author(s): Y. Amma, K. Ema, and T. Arakawa
  • Organizer: 2010 International Conference on Solid State Devices and Materials(SSDM)
  • Place of Presentation: Tokyo
  • Year and Date: 2010-09-23
• [Presentation] Electro refractive Effect in Strained InGaAs/InAIAs Five-Layer Asymmetric Coupled Quantum Well (2010)
  • Author(s): T. Wajima, T. Arakawa, and K. Tada
  • Organizer: 2010 International Conference on Solid State Devices and Materials(SSDM)
  • Place of Presentation: Tokyo
  • Year and Date: 2010-09-23
• [Presentation] Electrorefractive Effect in Strained InGaAs/InAIAs Five-Layer Asymmetric Coupled Quantum Well (2010)
  • Author(s): T.Wajima
  • Organizer: 2010 International Conference on Solid StateDevices and Materials (SSDM)
  • Place of Presentation: Tokyo
  • Year and Date: 2010-09-23
• [Presentation] Modification of Material Parameters for InGaAs/InAlAs Quantum Wells (2010)
  • Author(s): H.Yamada
  • Organizer: 2010 International Conference on Solid StateDevices and Materials (SSDM)
  • Place of Presentation: Tokyo
  • Year and Date: 2010-09-23
• [Presentation] Influence of Intrinsic Layer Impurity in InGaAs/InAlAs Asymmetric Triple Coupled Quantum Well on Its Electrorefractive Index Change (2010)
  • Author(s): Y.Amma
  • Organizer: 2010 International Conference on Solid StateDevices and Materials (SSDM)
  • Place of Presentation: Tokyo
  • Year and Date: 2010-09-23
• [Presentation] Analysis of the Electro refractive Effect in Ge/SiGe Coupled Quantum Well for Silicon Based Optical Modulators (2010)
  • Author(s): Y. Iseri, H. Yamada, T. Arakawa, K. Tada, and N. Haneji
  • Organizer: The 15th Opto Electronics and Communication Conference(OECC2010)
  • Place of Presentation: Sapporo
  • Year and Date: 2010-07-08
• [Presentation] Analysis of the Electrorefractive Effect in Ge/SiGe Coupled QuantumWell for Silicon Based Optical Modulators (2010)
  • Author(s): Y.Iseri
  • Organizer: 15th OptoElectronics and Communication Conference (OECC2010)
  • Place of Presentation: Sapporo
  • Year and Date: 2010-07-08
• [Presentation] Influence of Heterointerface Abruptness on Electro refractive Effect in InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well(FACQW) (2009)
  • Author(s): Y. Iseri, T. Arakawa, K. Tada, and N. Haneji
  • Organizer: 2009 International Conference on Solid State Devices and Materials(SSDM)
  • Place of Presentation: Sendai
  • Year and Date: 2009-10-08
• [Presentation] Electro refractive Effect in Asymmetric Triple Coupled Quantum Well (2009)
  • Author(s): K. Ema, W. Endo, T. Arakawa, and K. Tada
  • Organizer: 2009 International Conference on Solid State Devices and Materials(SSDM)
  • Place of Presentation: Sendai
  • Year and Date: 2009-10-08
• [Presentation] Influence of Heterointerface Abruptness on Electrorefractive Effect in InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well (FACQW) (2009)
  • Author(s): Y.Iseri
  • Organizer: Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials
  • Place of Presentation: Sendai
  • Year and Date: 2009-10-08
• [Presentation] Electrorefractive Effect in Asymmetric Triple Coupled Quantum Well (2009)
  • Author(s): K.Ema
  • Organizer: Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials
  • Place of Presentation: Sendai
  • Year and Date: 2009-10-08
• [Presentation] Fabrication of Microring Resonator Tunable Wavelength Filter Using Five-layer Asymmetric Coupled Quantum Well (2009)
  • Author(s): T. Makino, R. Hasegawa, T. Arakawa, and Y. Kokubun
  • Organizer: 22nd Annual Meeting of the IEEE Photonics Society
  • Place of Presentation: Belek-Antalya, Turkey
  • Year and Date: 2009-10-07
• [Presentation] Low Voltage Mach-Zehnder Modulator with InGaAs/InAlAs Five Layer Asymmetric Coupled Quantum Wells (2009)
  • Author(s): M. Ushigome, M. Fukuoka, T. Arakawa, and K. Tada
  • Organizer: 22nd Annual Meeting of the IEEE Photonics Society
  • Place of Presentation: Belek-Antalya, Turkey
  • Year and Date: 2009-10-07
• [Presentation] Low Voltage Mach-Zehnder Modulator with InGaAs/InAlAs Five Layer Asymmetric Coupled Quantum Wells (2009)
  • Author(s): M.Ushigome
  • Organizer: the 22nd Annual Meeting of the IEEE Photonics Society
  • Place of Presentation: Belek-Antalya, Turkey
  • Year and Date: 2009-10-07
• [Presentation] Fabrication of Microring Resonator Tunable Wavelength Filter Using Five-layer Asymmetric Coupled Quantum Well (2009)
  • Author(s): T.Makino
  • Organizer: the 22nd Annual Meeting of the IEEE Photonics Society
  • Place of Presentation: Belek-Antalya, Turkey
  • Year and Date: 2009-10-07
• [Presentation] Proposal of Ge/SiGe Five-Layer Asymmetric Coupled Quantum Well for Mach-Zehnder Modulators (2009)
  • Author(s): Y. Iseri, T. Arakawa, K. Tada, and N. Haneji
  • Organizer: 22nd Annual Meeting of the IEEE Photonics Society
  • Place of Presentation: Belek-Antalya, Turkey
  • Year and Date: 2009-10-06
• [Presentation] Proposal of Ge/SiGe Five-Layer Asymmetric Coupled Quantum Well for Mach-Zehnder Modulators (2009)
  • Author(s): Y.Iseri
  • Organizer: the 22nd Annual Meeting of the IEEE Photonics Society
  • Place of Presentation: Belek-Antalya, Turkey
  • Year and Date: 2009-10-06
• [Book] 光エレクトロニクスとその応用 (2011)
  • Author(s): 日本学術振興会光エレクトロニクス第130委員会
  • Publisher: オーム社
• [Remarks]
  • URL: http://www.arakawa-lab.ynu.ac.jp/
• [Remarks]
  • URL: http://www.arakawa-lab.ynu.ac.jp/top.htm