| Budget Amount *help |
¥18,460,000 (Direct Cost: ¥14,200,000、Indirect Cost: ¥4,260,000)
Fiscal Year 2011: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2010: ¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000)
Fiscal Year 2009: ¥7,930,000 (Direct Cost: ¥6,100,000、Indirect Cost: ¥1,830,000)
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| Research Abstract |
We fabricated GaAa/ AlAs multilayer cavity structures with InAs quantum dots(QDs) embedded in strain-relaxed InGaAs layers by molecular beam epitaxy on the GaAs substrate, and nonlinear optical responses were investigated. We found that Er-doping induced ultrafast decay of the photo-excited carriers in the InAs QDs, and confirmed that nonlinear optical signals with a response time of around 1ps were obtained in the cavity structure with QDs, which were two order of magnitude larger than that without QDs.
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