| Budget Amount *help |
¥19,110,000 (Direct Cost: ¥14,700,000、Indirect Cost: ¥4,410,000)
Fiscal Year 2011: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
Fiscal Year 2010: ¥10,010,000 (Direct Cost: ¥7,700,000、Indirect Cost: ¥2,310,000)
Fiscal Year 2009: ¥6,760,000 (Direct Cost: ¥5,200,000、Indirect Cost: ¥1,560,000)
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| Research Abstract |
Thermophotovoltaic generation of electricity using near-field radiation(evanescent wave) was investigated using a GaSb semiconductor. Two kinds of cells were manufactured ; one was a p-n junction cell made of undoped GaSb and Te-doped GaSb and another was a schottoky cell made of n-type GaSb with a thin Ni film. The energy transfer by the near-field radiation becomes 4. 3 and 3. 6 times higher than that by the conventional propagating-radiation for the p-n junction cell and the schottoky cell, respectively. In addition, using a modified scanning near-field optical microscope manufactured in our laboratory, the near-field radiation was detected by a silica glass fiber probe under the condition of an emitter temperature of 850℃. Within a distance of about 100nm from the emitter surface, the output signal was drastically increased by the evanescent wave. Furthermore, through numerical simulation developed in our laboratory, pillar-array-structured surfaces faced together provide a spectral control of near-field radiation transfer as a result of resonance of a surface Plasmon in the narrow channel between pillars.
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