| Budget Amount *help |
¥17,680,000 (Direct Cost: ¥13,600,000、Indirect Cost: ¥4,080,000)
Fiscal Year 2011: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2010: ¥7,280,000 (Direct Cost: ¥5,600,000、Indirect Cost: ¥1,680,000)
Fiscal Year 2009: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
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| Research Abstract |
In this research project, a novel device fabrication process using liquid sources without conventional lithography techniques has been proposed. It was confirmed that the physical properties of thin films are closely related to thermal properties of source solutions and design concept for source solutions are defined. Next, ferroelectric-gate nonvolatile memory devices have been demonstrated using the proposed total solution process. In addition, the direct patterning of oxide films using solution process has been achieved.
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