| Budget Amount *help |
¥18,200,000 (Direct Cost: ¥14,000,000、Indirect Cost: ¥4,200,000)
Fiscal Year 2011: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2010: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2009: ¥10,270,000 (Direct Cost: ¥7,900,000、Indirect Cost: ¥2,370,000)
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| Research Abstract |
Three-dimensionally controlled quantum dot(QD) has aδ-function type density of states, which realizes high-performance devices. In particular, self-assembled InAs/GaAs QDs grown by utilizing the Stranski-Ktrastanov mode are suitable for laser and optical relay devices and are expected to realize polarization-insensitive operation, broad-band operation, and ultrafast response simultaneously. We developed a precisely controlled stacking technique of InAs/GaAs QDs exhibiting the one-dimensional properties. In particular, we fabricated semiconductor amplifiers including the stacked InAs/GaAs QDs and demonstrated the control of the polarization insensitivity.
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